TWI740438B - 微型發光二極體的轉移方法 - Google Patents

微型發光二極體的轉移方法 Download PDF

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TWI740438B
TWI740438B TW109110964A TW109110964A TWI740438B TW I740438 B TWI740438 B TW I740438B TW 109110964 A TW109110964 A TW 109110964A TW 109110964 A TW109110964 A TW 109110964A TW I740438 B TWI740438 B TW I740438B
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light
micro
emitting diode
transferring
diode chips
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梁世賢
曾偉銘
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聚積科技股份有限公司
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Abstract

一種微型發光二極體的轉移方法，利用將於晶圓製得的微型發光二極體晶片封裝後，將該等封裝後可發出不同光色的微型發光二極體以定義好的畫素為切割單位進行切割，且每一個畫素至少包含兩個可發出不同光色的微型發光二極體，而得到多個可供移轉的畫素單元，因此，可以畫素為單元進行移轉而可減少以單顆微型發光二極體進行基板轉移的時間。

Description

微型發光二極體的轉移方法
本發明是有關於一種發光二極體的轉移方法，特別是指一種微型發光二極體的轉移方法。
隨著顯示、照明的需求及應用領域不斷的擴展，對發光二極體(LED)的需求跟及相關性能的要求也越來越高。其中，微型發光二極體是將傳統LED尺寸微縮至100微米以下，具有自發光、低功耗、高亮度、壽命長等良好的光電特性，近年來隨著發光二極體的應用領域越來越廣泛，微型發光二極體(Micro Light Emitting Diode，Micro LED)更是業界亟欲發展之重點。
目前要將製得的微型發光二極體轉移到永久基板是採用搬運式作法，亦即是利用將單顆的微型發光二極體從晶圓搬移到永久基板(例如顯示面板)上。然而此巨量轉移的過程極為耗時，因此，如何解決微型發光二極體巨量轉移的耗時問題，則是相關技術業者努力解決的方向之一。
因此，本發明的目的，即在提供一種微型發光二極體的轉移方法。
於是，本發明微型發光二極體的轉移方法，包含以下步驟。
步驟(a)，於一晶圓上形成多個彼此成一間隙並成陣列排列的微型發光二極體晶片，其中，該間隙介於0.1~1mm，且每一個微型發光二極體晶片具有形成於頂面的一電極單元。
步驟(b)，將該等微型發光二極體晶片以電極單元結合於一暫時承載基板，並將該晶圓移除。
步驟(c)，於該等微型發光二極體晶片的間隙填置不透光材料，並將其固化後形成一遮光層。
步驟(d)，形成一覆蓋該等微型發光二極體晶片及該等遮光層的可透光的封裝層，而得到多個可發出不同色光的微型發光二極體，其中，每一個微型發光二極體包含一個微型發光二極體晶片及對應覆蓋其上的封裝層，定義多個畫素，且每一個畫素具有至少兩個可發出不同色光的微型發光二極體。
步驟(e)，將該暫時承載基板移除，令該等微型發光二極體晶片的電極單元露出得到一待轉移半成品。
步驟(f)，將該待轉移半成品以該等畫素為切割單位進行切割，得到多個可供移轉的畫素單元。
本發明的功效在於：利用將於晶圓製得的微型發光二極體晶片封裝後，即將該等封裝後可發出不同光色的微型發光二極體以定義好的畫素為切割單位進行切割，且每一個畫素至少包含兩個可發出不同光色的微型發光二極體，而得到多個可供移轉的畫素單元，而可減少以單顆晶粒進行巨量移轉的製程時間。
本發明的微型發光二極體的轉移方法是用於將已封裝後的微型發光二極體以畫素切割後進行移轉，每一個畫素具有至少兩個可發出不同色光的微型發光二極體，且該等微型發光二極體的間距及光色需求與待轉移之永久基板(例如具電連接線路的顯示面板)匹配。
參閱圖1~2，本發明微型發光二極體的轉移方法包含以下步驟。
首先，進行步驟(a)，於一晶圓2表面形成多個彼此成一間隙G並成陣列排列的微型發光二極體晶片3。
其中，該晶圓2即用於成長發光磊晶層的基板，例如藍寶石藍基板、矽基板等，該等微型發光二極體晶片3是利用於該晶圓2成長多層堆疊的發光磊晶層31及多個分佈於該發光磊晶層31的電極單元32後，再以半導體製程將該等發光磊晶層31切割而於該晶圓2上形成多個成陣列排列的微型發光二極體晶片3。由於該等發光磊晶層31的相關材料及用於製備該等微型發光二極體晶片3的相關製程為本技術領域者所習知，因此，再此不再多加贅述。其中，該等微型發光二極體晶片3之間的間隙介於0.1~1mm，且每一個微型發光二極體晶片3具有一對應形成於發光磊晶層31頂面並用於對外電連接的電極單元32，且該發光磊晶層31的厚度約不大於10μm，長x寬尺寸不大於100x100μm。
於一些實施例中，該等微型發光二極體晶片3之間的間隙介於0.1~0.5mm。
接著，進行步驟(b)，將該等微型發光二極體晶片3以電極單元32結合於一暫時承載基板100並將該晶圓2移除。
詳細的說，該暫時承載基板100是用於暫時承接該等微型發光二極體晶片3，以利移除供磊晶成長用的該晶圓2。該暫時承載基板100可選自玻璃、高分子(例如聚醯亞胺等)等材料。該等微型發光二極體晶片3可利用熱壓方式與該暫時承載基板100結合，該晶圓2則可用雷射剝離(laser lift-off)方式移除。要說明的是，該雷射剝離使用的雷射種類及相關功率參數為本技術領域者熟知且視所欲移除之晶圓2材料而可自行調整，因此，於此不再多加說明。
隨後進行步驟(c)，於該等微型發光二極體晶片3的間隙G形成一遮光層4。
詳細的說，該步驟(c)是利用於該等微型發光二極體晶片的間隙G以網印方式填置不透光材料並將其固化後而形成該遮光層4。該不透光材料可選自黑色樹脂(Black matrix，BM)或其它不透光材料。
值得一提的是，當前述該等微型發光二極體晶片3是可分別發出不同光色時，該遮光層4的高度可控制在與該等微型發光二極體晶片3的發光磊晶層31表面齊平即可；而當該等微型發光二極體晶片3是發出相同光色時，因後續需要再形成光轉換膜，以轉換該等微型發光二極體晶片3最終對外發出的光色，因此，該遮光層4的高度會控制在高於該等微型發光二極體晶片3的發光磊晶層31表面，以利形成該光轉換膜。於本實施例中，是以該等微型發光二極體晶片3是以發出相同光色(例如藍光)為例，因此，該步驟23形成的該遮光層4的高度是高於該等微型發光二極體晶片3的發光磊晶層31表面，而讓該遮光層4與該等發光磊晶層31共同界定出一可容置光轉換膜的容置空間41。
接著，進行步驟(d)，形成一覆蓋該等微型發光二極體晶片3的封裝層5，而得到多個可發出不同色光的微型發光二極體6。
詳細的說，該步驟(d)是先以噴墨(inkjet ink)方式於該等容置空間41填置含有波長轉換量子點的量子點溶液，將其固化後而於該等微型發光二極體晶片3的頂面形成光轉換膜51。接著，再以網印或模注方式，於該等光轉換膜51及該遮光層4頂面覆蓋一透明的封裝膠材(例如環氧樹脂、矽膠、聚醯亞胺等)並將其固化後，形成覆蓋該等光轉換膜51及該等遮光層4的封膠膜52，得到該封裝層5，而形成多個微型發光二極體6。
其中，每一個微型發光二極體6包含一個微型發光二極體晶片3及對應覆蓋其上的封裝層5，每一個微型發光二極體晶片3可透過相應的封裝層5的光轉換膜51進行波長轉換，而對外發出不同色光(例如紅光、綠光、黃光等)。圖2中是以6R、6G、6G表示發出不同色光的微型發光二極體6。
要說明的是，當該等微型發光二極體晶片3本身即可發出不同光色時，該步驟(d)僅需形成該封膠膜52而無需形成該光轉換膜51。
定義多個畫素P，且每一個畫素P具有至少兩個可發出不同色光的微型發光二極體。要說明的是，前述該等畫素P為與後續待轉移之永久基板300所欲形成的顯示封裝結構相配合。例如，當該永久基板300是用於形成多組重覆排列的顯示畫素單元，且每一個顯示畫素單元具有3個沿x方向成直線排列且可發出紅光、綠光及藍光的發光二極體6R、6G、6B，則經過該步驟24定義而得的每一個畫素P則如圖2所示為對應具有3個沿x方向成直線排列且發光順序為紅光、綠光及藍光的微型發光二極體6R、6G、6B。
然後，進行步驟(e)，移除該暫時承載基板100，得到一待轉移半成品200。
詳細的說，該步驟(e)可利用雷射剝離方式將該暫時承載基板100移除至令該等發光二極體晶片3的電極單元32露出，即可得到該等待轉移半成品200。
之後，進行步驟(f)，將該待轉移半成品200進行切割，得到多個可供移轉的畫素P。
詳細的說，該步驟(f)可沿如圖2所示的假想線，以畫素P為單位進行切割，即可得到該等可供移轉的畫素P。由於該等微型發光二極體晶片3的間隙G極小，不易以一般機械方式進行切割，因此，該步驟(f)是以濕蝕刻、乾蝕刻，或光蝕刻等方式切割，以避免切割過程對該等微型發光二極體晶片3造成損壞。
於一些實施例中，該步驟(f)是利用濕蝕刻及光蝕刻配合進行切割，以得到最佳的切割效率。
最後，進行步驟(g)，將該等畫素P轉移至一永久基板300。
以該永久基板300為作為顯示用的顯示面板為例，該步驟(g)可利用機械手臂(圖未示)將切割後的該等畫素P以預定排列方式轉移至該永久基板300並與該永久基板300的電連接線路電連接，即可完成該顯示面板的製作。
綜上所述，本發明利用讓形成於該晶圓2之發光二極體晶片3呈固定間距(Pitch)且陣列式分佈，而於整體封裝後形成可發出不同光色的微型發光二極體6，再將該等發出不同光色的微型發光二極體6區隔成不同畫素P，並令每一個畫素P具有至少兩個可發出不同色光的微型發光二極體6，最後即可以畫素P為切割單元進行切割、轉移並與驅動板結合。透過已封裝完成並同時具有多顆微型發光二極體6的畫素P進行轉移，可減少習知以單顆微型發光二極體進行基板轉移的時間，特別是當該等微型發光二極體3的間隙G小於0.4mm時使用本發明之轉移方法，可更減少微型發光二極體模組封裝的工時，故確實能達成本發明的目的。
惟以上所述者，僅為本發明的實施例而已，當不能以此限定本發明實施的範圍，凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾，皆仍屬本發明專利涵蓋的範圍內。
2:晶圓 3:微型發光二極體晶片 31:發光磊晶層 32:電極單元 4:遮光層 41:容置空間 5:封裝層 51:光轉換膜 52:封膠膜 6、6R、6G、6B:微型發光二極體 G:間隙 P:畫素 100:暫時承載基板 200:待轉移半成品 300:永久基板 (a)~(g):步驟
本發明的其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是一文字流程圖，說明本發明微型發光二極體的轉移方法的實施例；及 圖2是一流程示意圖，輔助說明圖1。
(a)~(g):步驟

Claims (8)

  1. 一種微型發光二極體的轉移方法，包含：步驟(a)，於一晶圓上形成多個微型發光二極體晶片，該等微型發光二極體晶片彼此成一間隙並成陣列排列，其中，該間隙介於0.1~1mm，且每一個微型發光二極體晶片具有形成於頂面的一電極單元；步驟(b)，將該等微型發光二極體晶片以電極單元結合於一暫時承載基板，並將該晶圓移除；步驟(c)，執行該步驟(b)後，於該等微型發光二極體晶片的間隙填置不透光材料，並將其固化後形成一遮光層；步驟(d)，於該步驟(c)後，形成一覆蓋該等微型發光二極體晶片及該遮光層的可透光的封裝層，而得到多個可發出不同色光的微型發光二極體，其中，每一個微型發光二極體包含該等微型發光二極體晶片的其中任一及對應覆蓋其上的該封裝層，定義出多個畫素，且每一個畫素具有至少兩個可發出不同色光的微型發光二極體；步驟(e)，於該步驟(d)後，將該暫時承載基板移除，令該等微型發光二極體晶片的電極單元露出得到一待轉移半成品；及步驟(f)，將該待轉移半成品以該等畫素為切割單位進行切割，得到多個可供移轉的畫素。
  2. 如請求項1所述微型發光二極體的轉移方法，還包含步驟(g)，將切割後的該等畫素單元與一具有驅動電路的永久 基板電連接。
  3. 如請求項1所述微型發光二極體的轉移方法，其中，該步驟(f)是以乾蝕刻、濕蝕刻，及光蝕刻的其中至少一種進行切割。
  4. 如請求項3所述微型發光二極體的轉移方法，其中，該步驟(f)是以濕蝕刻及光蝕刻進行切割。
  5. 如請求項1所述微型發光二極體的轉移方法，其中，該步驟(c)中，還令該遮光層與該等微型發光二極體晶片共同界定多個容置空間，該步驟(d)是先於該等容置空間填置含有波長轉換量子點的量子點溶液，而於每一個微型發光二極體晶片上對應形成一光轉換膜，再形成一覆蓋該等光轉換膜及該等遮光層的封膠膜，而得到該封裝層。
  6. 如請求項5所述微型發光二極體的轉移方法，其中，該步驟(d)是以噴塗方式填置該含有波長轉換量子點的溶液。
  7. 如請求項5所述微型發光二極體的轉移方法，其中，該步驟(a)的該等微型發光二極體晶片為發出相同色光。
  8. 如請求項1所述微型發光二極體的轉移方法，其中，該步驟(a)的該等微型發光二極體晶片為發出不同色光。
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