CN113471236A - 微型发光二极管的转移方法 - Google Patents

微型发光二极管的转移方法 Download PDF

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CN113471236A
CN113471236A CN202110174115.2A CN202110174115A CN113471236A CN 113471236 A CN113471236 A CN 113471236A CN 202110174115 A CN202110174115 A CN 202110174115A CN 113471236 A CN113471236 A CN 113471236A
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梁世贤
曾伟铭
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Abstract

一种微型发光二极管的转移方法，利用将于晶圆制得的微型发光二极管芯片封装后，将所述封装后可发出不同光色的微型发光二极管以定义好的画素为切割单位进行切割，且每一个画素至少包含两个可发出不同光色的微型发光二极管，而得到多个可供移转的画素，因此，可以画素为单元进行移转而可减少以单颗微型发光二极管进行基板转移的时间。

Description

微型发光二极管的转移方法
技术领域
本发明涉及一种发光二极管的转移方法，特别是涉及一种微型发光二极管的转移方法。
背景技术
随着显示、照明的需求及应用领域不断的扩展，对发光二极管(LED)的需求及相关性能的要求也越来越高。其中，微型发光二极管是将传统LED尺寸微缩至100微米以下，具有自发光、低功耗、高亮度、寿命长等良好的光电特性，近年来随着发光二极管的应用领域越来越广泛，微型发光二极管(Micro Light Emitting Diode，Micro LED)更是业界亟欲发展的重点。
目前要将制得的微型发光二极管转移到永久基板是采用搬运式作法，亦即是利用将单颗的微型发光二极管从晶圆搬移到永久基板(例如显示面板)上。然而此巨量转移的过程极为耗时，因此，如何解决微型发光二极管巨量转移的耗时问题，则是相关技术业者努力解决的方向之一。
发明内容
本发明的目的在于提供一种微型发光二极管的转移方法。
本发明微型发光二极管的转移方法，包含以下步骤。
步骤(a)，于晶圆上形成多个彼此成一间隙并成阵列排列的微型发光二极管芯片，其中，该间隙介于0.1mm至1mm，且每一个微型发光二极管芯片具有形成于顶面的电极单元。
步骤(b)，将所述微型发光二极管芯片以所述电极单元结合于暂时承载基板，并将该晶圆移除。
步骤(c)，于所述微型发光二极管芯片的间隙填置不透光材料，并将其固化后形成遮光层。
步骤(d)，形成覆盖所述微型发光二极管芯片及所述遮光层的可透光的封装层，而得到多个可发出不同色光的微型发光二极管，其中，每一个微型发光二极管包含一个微型发光二极管芯片及对应覆盖其上的封装层，定义多个画素，且每一个画素具有至少两个可发出不同色光的微型发光二极管。
步骤(e)，将该暂时承载基板移除，令所述微型发光二极管芯片的电极单元露出得到待转移半成品。
步骤(f)，将该待转移半成品以所述画素为切割单位进行切割，得到多个可供移转的画素。
优选地，本发明微型发光二极管的转移方法，还包含步骤(g)，将切割后的所述画素与具有驱动电路的永久基板电连接。
优选地，本发明微型发光二极管的转移方法，其中，该步骤(f)是以干蚀刻、湿蚀刻，及光蚀刻的至少一种进行切割。
优选地，本发明微型发光二极管的转移方法，其中，该步骤(f)是以湿蚀刻及光蚀刻进行切割。
优选地，本发明微型发光二极管的转移方法，其中，该步骤(c)中，还令该遮光层与所述微型发光二极管芯片共同界定多个容置空间，该步骤(d)是先于所述容置空间填置含有波长转换量子点的量子点溶液，而于每一个微型发光二极管芯片上对应形成光转换膜，再形成覆盖所述光转换膜及所述遮光层的封胶膜，而得到该封装层。
优选地，本发明微型发光二极管的转移方法，其中，该步骤(d)是以喷涂方式填置该含有波长转换量子点的量子点溶液。
优选地，本发明微型发光二极管的转移方法，其中，该步骤(a)的所述微型发光二极管芯片为发出相同色光。
优选地，本发明微型发光二极管的转移方法，其中，该步骤(a)的所述微型发光二极管芯片为发出不同色光。
本发明的有益的效果在于：利用将于晶圆制得的微型发光二极管芯片封装后，即将所述封装后可发出不同光色的微型发光二极管以定义好的画素为切割单位进行切割，且每一个画素至少包含两个可发出不同光色的微型发光二极管，而得到多个可供移转的画素，而可减少以单颗晶粒进行巨量移转的制程时间。
附图说明
图1是文字流程图，说明本发明微型发光二极管的转移方法的实施例；及
图2是流程示意图，辅助说明图1。
具体实施方式
下面结合附图及实施例对本发明进行详细说明。
本发明的微型发光二极管的转移方法是用于将已封装后的微型发光二极管以画素切割后进行移转，每一个画素具有至少两个可发出不同色光的微型发光二极管，且所述微型发光二极管的间距及光色需求与待转移的永久基板(例如具电连接线路的显示面板)匹配。
参阅图1至图2，本发明微型发光二极管的转移方法包含以下步骤。
首先，进行步骤(a)，于晶圆2表面形成多个彼此成一间隙G并成阵列排列的微型发光二极管芯片3。
该晶圆2即用于成长发光磊晶层的基板，例如蓝宝石基板、硅基板等，所述微型发光二极管芯片3是利用于该晶圆2成长多层堆叠的发光磊晶层31及多个分布于该发光磊晶层31的电极单元32后，再以半导体制程将所述发光磊晶层31切割而于该晶圆2上形成多个成阵列排列的微型发光二极管芯片3。由于所述发光磊晶层31的相关材料及用于制备所述微型发光二极管芯片3的相关制程为本技术领域的常规技术，因此，于此不再多加赘述。其中，所述微型发光二极管芯片3之间的间隙介于0.1mm至1mm，且每一个微型发光二极管芯片3具有对应形成于发光磊晶层31顶面并用于对外电连接的电极单元32，且该发光磊晶层31的厚度约不大于10μm，长x宽尺寸不大于100μm x100μm。
于一些实施例中，所述微型发光二极管芯片3的间隙介于0.1mm至0.5mm。
接着，进行步骤(b)，将所述微型发光二极管芯片3以电极单元32结合于暂时承载基板100并将该晶圆2移除。
详细的说，该暂时承载基板100是用于暂时承接所述微型发光二极管芯片3，以利移除供磊晶成长用的该晶圆2。该暂时承载基板100可选自玻璃、高分子(例如聚酰亚胺等)等材料。所述微型发光二极管芯片3可利用热压方式与该暂时承载基板100结合，该晶圆2则可用激光剥离(laser lift-off)方式移除。要说明的是，该激光剥离使用的激光种类及相关功率参数为本技术领域者熟知且视所欲移除的晶圆2的材料而可自行调整，因此，于此不再多加说明。
随后进行步骤(c)，于所述微型发光二极管芯片3的间隙G形成遮光层4。
详细的说，该步骤(c)是利用于所述微型发光二极管芯片3的间隙G以网印方式填置不透光材料并将其固化后而形成该遮光层4。该不透光材料可选自黑色树脂(Blackmatrix，BM)或其它不透光材料。
值得一提的是，当前述所述微型发光二极管芯片3是可分别发出不同光色时，该遮光层4的高度可控制在与所述微型发光二极管芯片3的发光磊晶层31表面齐平即可；而当所述微型发光二极管芯片3是发出相同光色时，因后续需要再形成光转换膜，以转换所述微型发光二极管芯片3最终对外发出的光色，因此，该遮光层4的高度会控制在高于所述微型发光二极管芯片3的发光磊晶层31表面，以利形成该光转换膜。于本实施例中，是以所述微型发光二极管芯片3是以发出相同光色(例如蓝光)为例，因此，该步骤(c)形成的该遮光层4的高度是高于所述微型发光二极管芯片3的发光磊晶层31表面，而让该遮光层4与所述发光磊晶层31共同界定出一可容置光转换膜的容置空间41。
接着，进行步骤(d)，形成覆盖所述微型发光二极管芯片3的封装层5，而得到多个可发出不同色光的微型发光二极管6。
详细的说，该步骤(d)是先以喷墨(inkjet ink)方式于所述容置空间41填置含有波长转换量子点的量子点溶液，将其固化后而于所述微型发光二极管芯片3的顶面形成光转换膜51。接着，再以网印或模注方式，于所述光转换膜51及该遮光层4顶面覆盖透明的封装胶材(例如环氧树脂、硅胶、聚酰亚胺等)并将其固化后，形成覆盖所述光转换膜51及所述遮光层4的封胶膜52，得到该封装层5，而形成多个微型发光二极管6。
其中，每一个微型发光二极管6包含一个微型发光二极管芯片3及对应覆盖其上的封装层5，每一个微型发光二极管芯片3可通过相应的封装层5的光转换膜51进行波长转换，而对外发出不同色光(例如红光、绿光、蓝光等)。图2中是以6R、6G、6B表示发出不同色光的微型发光二极管6。
要说明的是，当所述微型发光二极管芯片3本身即可发出不同光色时，该步骤(d)仅需形成该封胶膜52而无需形成该光转换膜51。
定义多个画素P，且每一个画素P具有至少两个可发出不同色光的微型发光二极管6。要说明的是，前述所述画素P为与后续待转移的永久基板300所欲形成的显示封装结构相配合。例如，当该永久基板300是用于形成多组重复排列的显示画素单元，且每一个显示画素单元具有3个沿x方向成直线排列且可发出红光、绿光及蓝光的发光二极管6R、6G、6B，则经过该步骤(d)定义而得的每一个画素P则如图2所示为对应具有3个沿x方向成直线排列且发光顺序为红光、绿光及蓝光的微型发光二极管6R、6G、6B。
然后，进行步骤(e)，移除该暂时承载基板100，得到待转移半成品200。
详细的说，该步骤(e)可利用激光剥离方式将该暂时承载基板100移除至令所述发光二极管芯片3的电极单元32露出，即可得到所述待转移半成品200。
之后，进行步骤(f)，将该待转移半成品200进行切割，得到多个可供移转的画素P。
详细的说，该步骤(f)可沿如图2所示的假想线，以画素P为单位进行切割，即可得到所述可供移转的画素P。由于所述微型发光二极管芯片3的间隙G极小，不易以一般机械方式进行切割，因此，该步骤(f)是以湿蚀刻、干蚀刻，或光蚀刻等方式切割，以避免切割过程对所述微型发光二极管芯片3造成损坏。
于一些实施例中，该步骤(f)是利用湿蚀刻及光蚀刻配合进行切割，以得到最佳的切割效率。
最后，进行步骤(g)，将所述画素P转移至永久基板300。
以该永久基板300为作为显示用的显示面板为例，该步骤(g)可利用机械手臂(图未示)将切割后的所述画素P以预定排列方式转移至该永久基板300并与该永久基板300的电连接线路电连接，即可完成该显示面板的制作。
综上所述，本发明利用让形成于该晶圆2的发光二极管芯片3呈固定间距(Pitch)且阵列式分布，而于整体封装后形成可发出不同光色的微型发光二极管6，再将所述发出不同光色的微型发光二极管6区隔成不同画素P，并令每一个画素P具有至少两个可发出不同色光的微型发光二极管6，最后即可以画素P为切割单元进行切割、转移并与驱动板结合。通过已封装完成并同时具有多颗微型发光二极管6的画素P进行转移，可减少现有技术中以单颗微型发光二极管进行基板转移的时间，特别是当所述微型发光二极管3的间隙G小于0.4mm时，使用本发明的转移方法可更减少微型发光二极管模块封装的工时，故确实能达成本发明的目的。
惟以上所述者，仅为本发明的实施例而已，当不能以此限定本发明实施的范围，凡是依本发明权利要求书及说明书内容所作的简单的等效变化与修饰，皆仍属本发明涵盖的范围内。

Claims (8)

1.一种微型发光二极管的转移方法，其特征在于：包含：
步骤(a)，于晶圆上形成多个彼此成一间隙并成阵列排列的微型发光二极管芯片，其中，该间隙介于0.1mm至1mm，且每一个微型发光二极管芯片具有形成于顶面的电极单元；
步骤(b)，将所述微型发光二极管芯片以所述电极单元结合于暂时承载基板，并将该晶圆移除；
步骤(c)，于所述微型发光二极管芯片的间隙填置不透光材料，并将其固化后形成遮光层；
步骤(d)，形成覆盖所述微型发光二极管芯片及该遮光层的可透光的封装层，而得到多个可发出不同色光的微型发光二极管，其中，每一个微型发光二极管包含一个微型发光二极管芯片及对应覆盖其上的封装层，定义出多个画素，且每一个画素具有至少两个可发出不同色光的微型发光二极管；
步骤(e)，将该暂时承载基板移除，令所述微型发光二极管芯片的电极单元露出得到待转移半成品；及
步骤(f)，将该待转移半成品以所述画素为切割单位进行切割，得到多个可供移转的画素。
2.根据权利要求1所述的微型发光二极管的转移方法，其特征在于：还包含步骤(g)，将切割后的所述画素与具有驱动电路的永久基板电连接。
3.根据权利要求1所述的微型发光二极管的转移方法，其特征在于：该步骤(f)是以干蚀刻、湿蚀刻，及光蚀刻的至少一种进行切割。
4.根据权利要求3所述的微型发光二极管的转移方法，其特征在于：该步骤(f)是以湿蚀刻及光蚀刻进行切割。
5.根据权利要求1所述的微型发光二极管的转移方法，其特征在于：该步骤(c)中，还令该遮光层与所述微型发光二极管芯片共同界定多个容置空间，该步骤(d)是先于所述容置空间填置含有波长转换量子点的量子点溶液，而于每一个微型发光二极管芯片上对应形成光转换膜，再形成覆盖所述光转换膜及所述遮光层的封胶膜，而得到该封装层。
6.根据权利要求5所述的微型发光二极管的转移方法，其特征在于：该步骤(d)是以喷涂方式填置该含有波长转换量子点的量子点溶液。
7.根据权利要求5所述的微型发光二极管的转移方法，其特征在于：该步骤(a)的所述微型发光二极管芯片为发出相同色光。
8.根据权利要求1所述的微型发光二极管的转移方法，其特征在于：该步骤(a)的所述微型发光二极管芯片为发出不同色光。
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