JP2021535588A - ウエハーツーウエハーボンディングのためのメサ形成 - Google Patents
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract
Description
本出願は、2019年6月10日に出願された米国特許出願第16/436,794号、および2018年9月11日に出願された米国特許仮出願第62/729,820号の優先権を主張するものである。米国特許出願第16/436,794号、および第62/729,820号の全体が参照により本明細書に組み込まれる。
Claims (23)
- 複数の隣接するメサ形状を形成するように半導体材料をエッチングすることであって、前記半導体材料は1つまたは複数のエピタキシャル層を含む、エッチングすることと、
前記隣接するメサ形状間の間隙内にパッシベーション層を形成することと、
前記半導体材料の第1の表面にベースウエハーをボンディングすることと、を含む方法。 - 前記半導体材料の第2の表面から基板を除去することであって、前記半導体材料の前記第2の表面は、前記半導体材料の前記第1の表面と相対している、除去することと、
複数の発光ダイオードを形成するように前記隣接するメサ形状の各対間にトレンチをパターニングすることと、をさらに含む、請求項1に記載の方法。 - 前記複数の発光ダイオードのうちの1つに対応する前記半導体材料の前記第2の表面の一部にレンズを形成することをさらに含む、請求項2に記載の方法。
- 自然放出率を高めるように前記半導体材料の前記第2の表面上に構造を形成することをさらに含み、前記構造は、前記複数の発光ダイオードのうちの1つに対応する、請求項2に記載の方法。
- 第1のコンタクトを前記半導体材料上に形成することをさらに含み、前記第1のコンタクトは、第1の極性を有し、前記第1のコンタクトは、前記複数の隣接するメサ形状が形成される前または後に形成される、請求項1に記載の方法。
- 第2のコンタクトを形成することをさらに含み、前記第2のコンタクトは、前記第1のコンタクトの前記第1の極性とは反対である第2の極性を有する、請求項5に記載の方法。
- 前記第2のコンタクトは、分散されたコンタクト、または大きい領域のコンタクト、のうちの少なくとも1つである、請求項6に記載の方法。
- 前記ベースウエハーを前記半導体材料の前記第1の表面にボンディングする前に、
前記半導体材料の前記第1の表面、および前記パッシベーション層を平坦化することと、
前記半導体材料の前記第1の表面、および前記パッシベーション層上にボンディング層を堆積させることと、をさらに含み、
前記ベースウエハーは、前記ボンディング層を介して前記半導体材料の前記第1の表面にボンディングされる、請求項1に記載の方法。 - 前記ベースウエハーは、金属間ボンディングによって前記ボンディング層にボンディングされる、請求項8に記載の方法。
- 前記ベースウエハーは、共晶ボンディングによって前記ボンディング層にボンディングされる、請求項8に記載の方法。
- 前記ベースウエハーは、酸化物ボンディングによって前記ボンディング層にボンディングされる、請求項8に記載の方法。
- 前記ベースウエハーは、陽極ボンディング、熱圧着ボンディング、紫外線ボンディング、またはフュージョンボンディングのうちの少なくとも1つによって前記ボンディング層にボンディングされる、請求項8に記載の方法。
- 前記隣接するメサ形状間の間隙内に前記パッシベーション層を形成する前に、前記隣接するメサ形状のそれぞれの側壁にリフレクタ層を堆積させることをさらに含む、請求項1に記載の方法。
- 前記半導体材料は、順に、n型層、量子井戸層、およびp型層を含む、請求項1に記載の方法。
- 前記半導体材料の前記第1の表面に前記ベースウエハーをボンディングする前に、
前記半導体材料の前記第1の表面、および前記パッシベーション層上にコンタクト層を堆積させることと、
前記コンタクト層上にボンディング層を堆積させることと、をさらに含み、
前記ベースウエハーは、前記コンタクト層および前記ボンディング層を介して前記半導体材料の前記第1の表面にボンディングされる、請求項1に記載の方法。 - 前記ボンディング層および前記コンタクト層は、異なる金属から作られる、請求項15に記載の方法。
- 前記ボンディング層および前記コンタクト層は、同じ金属から作られる、請求項15に記載の方法。
- 前記隣接するメサ形状のそれぞれは、非垂直な側壁を有する、請求項1に記載の方法。
- 前記隣接するメサ形状のそれぞれは、放物線形状を有する、請求項1に記載の方法。
- 前記ベースウエハーは、複数のドライバ回路を含み、前記方法は、前記ベースウエハーを前記半導体材料の前記第1の表面にボンディングする間に、前記複数のドライバ回路を前記隣接するメサ形状と位置合わせすることをさらに含む、請求項1に記載の方法。
- 前記複数の発光ダイオードのうちの1つに対応する前記半導体材料の前記第2の表面の一部を粗面化することをさらに含む、請求項2に記載の方法。
- 前記基板は、前記基板と前記半導体材料との間の界面にレーザビームを集光することによって除去される、請求項2に記載の方法。
- 前記トレンチは、リソグラフィによってパターニングされる、請求項2に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201862729820P | 2018-09-11 | 2018-09-11 | |
US62/729,820 | 2018-09-11 | ||
US16/436,794 | 2019-06-10 | ||
US16/436,794 US11056611B2 (en) | 2018-09-11 | 2019-06-10 | Mesa formation for wafer-to-wafer bonding |
PCT/US2019/046536 WO2020055537A1 (en) | 2018-09-11 | 2019-08-14 | Mesa formation for wafer -to-wafer bonding |
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JP2021535588A true JP2021535588A (ja) | 2021-12-16 |
JPWO2020055537A5 JPWO2020055537A5 (ja) | 2023-06-07 |
JP7332680B2 JP7332680B2 (ja) | 2023-08-23 |
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EP (1) | EP3850667B1 (ja) |
JP (1) | JP7332680B2 (ja) |
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US11056611B2 (en) * | 2018-09-11 | 2021-07-06 | Facebook Technologies, Llc | Mesa formation for wafer-to-wafer bonding |
US11145786B2 (en) | 2018-09-11 | 2021-10-12 | Facebook Technologies, Llc | Methods for wafer-to-wafer bonding |
US11342479B2 (en) | 2018-09-11 | 2022-05-24 | Facebook Technologies, Llc | Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing |
US20210320234A1 (en) | 2020-04-09 | 2021-10-14 | Raysolve Optoelectronics (Suzhou) Company Limited | Light emitting diode structure and method for manufacturing the same |
CN112864290B (zh) * | 2020-04-09 | 2022-04-22 | 镭昱光电科技(苏州)有限公司 | 微型led显示器及其制造方法 |
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US11056611B2 (en) | 2021-07-06 |
US20210367097A1 (en) | 2021-11-25 |
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