CN103187377A - 具有桥型中介片的半导体封装 - Google Patents

具有桥型中介片的半导体封装 Download PDF

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Publication number
CN103187377A
CN103187377A CN2012105852206A CN201210585220A CN103187377A CN 103187377 A CN103187377 A CN 103187377A CN 2012105852206 A CN2012105852206 A CN 2012105852206A CN 201210585220 A CN201210585220 A CN 201210585220A CN 103187377 A CN103187377 A CN 103187377A
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mediplate
active chip
bridge type
chip
active
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CN103187377B (zh
Inventor
桑帕施·K·V·卡里卡兰
赵子群
胡坤忠
雷佐尔·拉赫曼·卡恩
彼得·沃伦坎普
陈向东
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Avago Technologies International Sales Pte Ltd
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Zyray Wireless Inc
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Abstract

本发明涉及具有桥型中介片的半导体封装，公开了包括桥型中介片的半导体封装的各种实施方式。一个示例性实施方式包括第一有源芯片，该第一有源芯片具有位于桥型中介片之上的第一部分，以及不位于桥型中介片之上的第二部分。该半导体封装还包括第二有源芯片，该第二有源芯片具有位于桥型中介片之上的第一部分，以及不位于桥型中介片之上的第二部分。第一有源芯片的第二部分和第二有源芯片的第二部分包括安装在封装基板上的焊球，并且被配置为采用焊球而不采用半导体通孔（TSV）将电信号通信至封装基板。

Description

具有桥型中介片的半导体封装
技术领域
本公开涉及具有桥型中介片（bridge interposer）的半导体封装。
背景技术
封装解决方案持续发展来满足由有着不断增大的集成电路密度的电子装置和系统施加的日益严格的设计约束。例如一个使单个的半导体封装中的有源芯片（active die）成倍增加的用于提供电源和接地的连接以及输入/输出信号的解决方案，采用一个以上的中介片来将有源芯片电耦接至封装基板。
为了该目的而实现的传统中介片通常包括形成在半导体基板上的中介片电介质。半导体通孔（TSV）通常用于提供电源和接地连接以及将I/O信号提供给有源芯片。然而，在TSV之中的寄生耦合导致的通过半导体基板的泄漏可以不利地影响通过传统中介片的电信号。
发明内容
基本上如结合至少一个附图所示出/描述的并且如在权利要求中更完整地提出的，本公开涉及具有桥型中介片的半导体封装。
本发明提供了一种半导体封装，包括：桥型中介片；第一有源芯片，具有位于桥型中介片之上的第一部分，以及不位于桥型中介片之上的第二部分；第二有源芯片，具有位于桥型中介片之上的第一部分，以及不位于桥型中介片之上的第二部分；第一有源芯片的第二部分和第二有源芯片的第二部分包括安装在封装基板上的焊球；第一有源芯片和第二有源芯片采用焊球而不采用半导体通孔将电信号通信至封装基板。
优选地，第一有源芯片和第二有源芯片通过桥型中介片来通信芯片至芯片信号。
优选地，第一有源芯片通过采用在桥型中介片中的AC信号垫来将AC信号通信至第二有源芯片。
优选地，桥型中介片由中介片电介质形成，该中介片电介质具有在其中形成的中介片内布线痕迹。
优选地，桥型中介片由包括味之素TM组成膜的中介片电介质形成，该味之素TM组成膜具有在其中形成的中介片内布线痕迹。
优选地，焊球通过各自的导电柱而耦接至第一有源芯片的第二部分以及第二有源芯片的第二部分。
优选地，第一有源芯片和第二有源芯片采用焊球和各自的导电柱将电信号通信至封装基板。
优选地，该半导体封装还包括在第一有源芯片的第二部分和第二有源芯片的第二部分上在各自的导电柱之间形成的钝化层。
本发明还提供了一种半导体封装，包括：桥型中介片；第一有源芯片，具有位于桥型中介片之上的第一部分，以及不位于桥型中介片之上的第二部分；第二有源芯片，具有位于桥型中介片之上的第一部分，以及不位于桥型中介片之上的第二部分；第一有源芯片的第二部分和第二有源芯片通过桥型中介片来通信芯片至芯片信号；封装基板，位于第一有源芯片和第二有源芯片之下，第一有源芯片和第二有源芯片采用接合配线将电信号通信至封装基板。
优选地，第一有源芯片通过桥型中介片将DC信号通信至第二有源芯片。
优选地，第一有源芯片通过采用在桥型中介片中的AC信号垫将AC信号通信至第二有源芯片。
优选地，桥型中介片由中介片电介质形成，该中介片电介质具有在其中形成的中介片内布线痕迹。
优选地，桥型中介片由包括味之素TM组成膜的中介片电介质形成，该味之素TM组成膜具有在其中形成的中介片内布线痕迹。
本发明还提供了一种半导体封装，包括：桥型中介片，具有包括AC信号垫的第一表面；第一有源芯片，具有面向桥型中介片的第一表面的第一部分；第二有源芯片，具有面向桥型中介片的第一表面的第一部分；第一有源芯片和第二有源芯片采用桥型中介片的AC信号垫来通信AC芯片至芯片信号。
优选地，第一有源芯片和第二有源芯片被配置为通过桥型中介片来通信DC芯片至芯片信号。
优选地，桥型中介片由中介片电介质形成，该中介片电介质具有在其中形成的中介片内布线痕迹。
优选地，桥型中介片由包括味之素TM组成膜的中介片电介质形成，该味之素TM组成膜具有在其中形成的中介片内布线痕迹。
优选地，第一有源芯片的第二部分和第二有源芯片的第二部分包括安装在封装基板上的焊球；第一有源芯片和第二有源芯片采用焊球而不采用半导体通孔将电信号通信至封装基板。
优选地，焊球通过各自的导电柱而耦接至第一有源芯片的第二部分以及第二有源芯片的第二部分。
优选地，该半导体封装还包括在第一有源芯片的第二部分和第二有源芯片的第二部分上在各自的导电柱之间形成的钝化层。
附图说明
图1A示出了包括桥型中介片的半导体封装的一个实施方式的截面图。
图1B示出了包括桥型中介片的半导体封装的另一个实施方式的截面图。
图1C示出了包括桥型中介片的半导体封装的又一个实施方式的截面图。
图2示出了包括非接触桥型中介片的半导体封装的一个实施方式的截面图。
图3示出了包括非接触桥型中介片的半导体封装的另一个实施方式的截面图。
具体实施方式
以下描述包含关于本公开的实施方式的具体信息。本领域的技术人员应理解的是本公开可以按照与本文中具体描述的不同的方式来实现。在本申请中的附图和它们的详细描述仅针对示例性实施方式。除非另有指出，否则在附图中相似或对应的元件可以由相似或对应的参考数字标明。此外在本申请中的附图和说明通常不按比例，并且目的不在于对应实际的相对尺寸。
图1A示出了包括桥型中介片的半导体封装的一个实施方式的截面图。如图1A中所示，半导体封装100A包括具有第一部分111和第二部分112的第一有源芯片110、具有第一部分121和第二部分122的第二有源芯片120、桥型中介片130以及封装基板102。如与1A中进一步所示，桥型中介片130具有第一表面131，并且包括中介片电介质132，该第一表面131面向第一和第二有源芯片分别的第一部分111和121，该中介片电介质具有在其中形成的中介片内布线痕迹134。在图1A中还示出了焊球142、微凸起144、将桥型中介片130固定至封装基板102的芯片贴附膜（DAF）104以及第一有源芯片110和第二有源芯片120距封装基板102的离开高度106A。
应注意，虽然在图1中只有一个示例性中介片内布线痕迹由参考数字134具体标明，但是在中介片电介质132中示出的四个中介片内布线痕迹中的任一或全部都可以被表征为中介片内布线痕迹134。还应注意虽然在图1A中每个焊球142和微凸起144中各自只有一个由参考数字具体标明，但是图1中所示的八个焊球和八个微凸起的任一或全部可以分别表征为焊球142和微凸起144。
例如，第一有源芯片110和第二有源芯片120可以是封装或未封装的芯片。虽然在图1A中第一有源芯片和第二有源芯片120以倒装芯片的构造示出，但是这种表示仅为示例，并且在其他实施方式中，第一有源芯片110和第二有源芯片120中的一个或两者可以表现为不同的构造。此外，应理解虽然图1A中所示的实施方式示出了例如第一有源芯片110和第二有源芯片120的两个有源芯片通过桥型中介片130耦接，但是在一个实施方式中，多于两个的有源芯片可以通过桥型中介片130耦接。
如图1A所示，在半导体封装100A中，第一有源芯片110具有位于桥型中介片130之上的第一部分111，以及不位于桥型中介片130之上的第二部分112。此外，在半导体封装100A中，第二有源芯片120具有位于桥型中介片130之上的第一部分121，以及不位于桥型中介片130之上的第二部分122。如进一步在图1A中示出的，第一有源芯片110的第二部分112和第二有源芯片120的第二部分122包括安装在封装基板102上的焊球142。因此，第一有源芯片110和第二有源芯片120被配置为采用焊球142而不采用半导体通孔（TSV）将电信号通信至封装基板102。此外，第一有源芯片110和第二有源芯片120同样被配置为通过桥型中介片130来通信芯片至芯片信号。换言之，例如第一有源芯片110和第二有源芯片120可以将焊球142用于接地、电源以及输入/输出（I/O）连接，同时使用在桥型中介片120的中介片电介质132中形成的微凸起144以及中介片内布线痕迹134来通信芯片至芯片信号。
例如，中介片电介质132可以由诸如纤维强化双马来酰亚胺三嗪（BT）、FR-4、玻璃或陶瓷的刚性电介质材料形成。可选地，中介片电介质132可以是由聚酰亚胺膜或其他合适的带材料形成的柔性电介质。在一些实施方式中，中介片电介质132可以是由环氧酚醛树脂或氰酸酯环氧构造材料形成的。作为具体示例，在一个实施方式中，中介片电介质132可以由味之素TM（AjinomotoTM）组成膜（ABF）形成。根据该示例性实施方式，中介片内布线痕迹134可以在用于形成中介片电介质132的构造过程中使用本领域中已知的任何合适的技术形成。
根据图1A中所示的实施方式，第一有源芯片110和第二有源芯片120通过微凸起144而电连接至桥型中介片130。然而应注意，更一般地，微凸起144可以对应于适用于将第一有源芯片110和第二有源芯片120耦接至桥型中介片130的任何电接触体。因此，在其他实施方式中，微凸起144可以由各个导电杆或导电柱来代替，例如由铜形成的金属杆或金属柱。可选地，在桥型中介片130中，一些或全部的微凸起144可以被交流（AC）信号垫（通过对以下的图2和图3的参考示出并描述的AC信号垫）替换。即，在一个实施方式中，桥型中介片130可以包括：用于在第一有源芯片110和第二有源芯片120之间通过中介片内布线痕迹134来通信直流（DC）芯片到芯片信号（“DC信号”）的微凸起144或其他电接触体，以及用于在第一有源芯片110和第二有源芯片120之间通信AC芯片到芯片信号的AC信号垫。
现参见图1B，图1B示出了包括桥型中介片的半导体封装的另一实施方式的截面图。半导体封装100B包括先前参考图1A描述的全部特征。此外，半导体封装100B包括将第一有源芯片110的第二部分112和第二有源芯片120的第二部分耦接至相应的焊球142的导电柱或导电杆146（下文中的“导电柱146”）。应注意虽然在图1B中只有一个导电柱146由参考数字具体地标明，但是图1B中所示的将第一有源芯片110的第二部分112和/或第二有源芯片120的第二部分耦接至相应的焊球142的八个导电柱的任一或全部，都可以被表征为导电柱146。
导电柱146可以是例如在位于第一有源芯片110的第二部分112和第二有源芯片120的第二部分122上的导电盘（在图1B中没有示出导线盘）上形成的金属柱。根据一个实施方式，导电柱146可以是使用电化学镀层处理而形成的铜柱。例如，如图1B中所示，导电柱146的使用导致相比于图1A中的离开高度106A，离开高度106增加了，并且在由焊球142单独提供的离开高度106A不足的情况下，导电柱146的使用是有利的。如图1B中进一步所示，在包括导电柱146的实施方式中，第一有源芯片110和第二有源芯片120采用焊球142和相应的导电柱146将电信号通信至封装基板102。
继续至图1C，图1C示出了包括桥型中介片的半导体封装的又一个实施方式的截面图。半导体封装100C包括先前参考图1A和图1B而描述的全部特征。此外，半导体封装100C包括在第一有源芯片110的第二部分112以及第二有源芯片120的第二部分122上在导电柱146之间形成的钝化层148。钝化层148可以是例如使用化学气相沉积处理（CVD）或用于制造钝化层148的任何其他适合的处理而形成的氧化物层，或诸如氮化硅（Si3N4）的氮化物层。例如，当采用导电柱146时，提供钝化层148可以增强机械强度以及通过焊球142到封装基板102的接地、电源和I/O连接的稳定性。
对比于中介片通常包括中介片电介质层和中介片半导体基板的传统半导体封装，半导体封装100A、100B和100C使用可以省略半导体基板的桥型中介片130来实现。此外，进一步地对比于采用TSV的传统封装解决方案，半导体封装100A、100B和100C采用导电柱146和/或焊球142从而在第一有源芯片110和封装基板102之间，以及在第二有源芯片120和封装基板102之间提供电子连接而不采用TSV，同时能够通过不使用TSV的桥型中介片130在第一有源芯片110和第二有源芯片120之间通信芯片至芯片信号。因此，半导体封装100A、100B、100C有利地避免了在传统技术中被认为会不利地影响经过TSV的信号的在TSV中的半导体泄漏和电耦合。
现移至图2，图2示出了包括非接触桥型中介片的半导体封装的一个实施方式的截面图。如图2中所示，半导体封装200包括具有第一部分211和第二部分212的第一有源芯片210、具有第一部分221和第二部分222的第二有源芯片220、示出为非接触桥型中介片的桥型中介片230以及封装基板202。如图2中进一步所示，桥型中介片230具有面向第一有源芯片210和第二有源芯片220分别的第一部分211和221的第一表面231，并且包括中介片电介质232，该中介片电介质232具有在其中形成的中介片内布线痕迹234以及AC信号垫237。图2中还示出了接合配线245，将桥型中介片230固定至第一有源芯片210的第一部分211和第二有源芯片220的第一部分221的粘附层238、在第一有源芯片210的第一部分211和第二有源芯片220的第一部分221中的AC信号垫247以及在第一有源芯片210和第二有源芯片220之间形成的填充材料208。
虽然在图200中只有一个示例性中介片内布线痕迹由参考数字234具体表明，但是需要理解的是，在中介片电介质232中示出的四个中介片内布线痕迹的任一或全部都可以表征为中介片内布线痕迹234。此外，虽然在图2中，在桥型中介片230中的每个AC信号垫237和在第一有源芯片110和第二有源芯片220中的每个AC信号垫247中，只有一个由参考数字具体标明，但是在桥型中介片230中的八个AC信号垫和分布在第一有源芯片210和第二有源芯片220之间的八个AC信号垫中的任一或全部都可以分别表征为AC信号垫237和AC信号垫247。
第一有源芯片210和第二有源芯片220可以是例如封装或未封装的芯片。虽然在图2中，桥型中介片230被示出为在第一有源芯片210的第一部分211和第二有源芯片220的第一部分221之上具有倒装芯片取向，但是该表示仅是示例性的，并且在其他的实施方式中，第一有源芯片210、第二有源芯片220以及桥型连接器的配置可以不同地构造。此外，应理解的是，虽然图2中所示的实施方式示出了通过桥型中介片230耦接的例如第一有源芯片210和第二有源芯片220的两个有源芯片，但是在一个实施方式中，可以通过桥型中介片230来耦接多于两个的有源芯片。
如图2中所示，在半导体封装200中，第一有源芯片210具有位于桥型中介片230之下的第一部分211以及不位于桥型中介片230之下的第二部分212。此外，在半导体封装200中，第二有源芯片220具有位于桥型中介片230之下的第一部分221以及不位于桥型中介片230之下的第二部分222。如图2中进一步所示，第一有源芯片210和第二有源芯片220被配置为通过桥型中介片230通信芯片至芯片信号。此外，并且也如图2中所示，第一有源芯片210的第二部分212和第二有源芯片220的第二部分222通过接合配线245耦接至封装基板202。换言之，第一有源芯片210和第二有源芯片220可以采用接合配线245来将电信号通信至封装基板202，同时，采用AC信号垫247通过粘附层238、在桥型中介片230中的AC信号垫237以及形成在中介片电介质232中的中介片内布线痕迹234来通信芯片至芯片信号。
例如，中介片电介质232可以由诸如纤维强化BT、FR-4、玻璃或陶瓷的刚性电介质材料形成。可选地，中介片电介质232可以是由聚酰亚胺膜或其他合适的带材料形成的柔性电介质。在一些实施方式中，中介片电介质132可以是由环氧酚醛树脂或氰酸酯环氧构造材料形成。作为具体示例，在一个实施方式中，中介片电介质232可以由ABFTM形成。根据该后面的示例性实施方式，中介片内布线痕迹234可以在用于形成中介片电介质232的构造过程中使用本领域中已知的任何合适的技术形成。
根据图2中所示的实施方式，第一有源芯片的第一部分211和第二有源芯片的第一部分221通过AC信号垫247、粘附层238以及在桥型中介片230中的AC信号垫237来电容性地连接至桥型中介片230。粘附层238可以由例如DAF，或任何在提供粘性同时拥有使粘附层238适合于用作电容电介质的介电常数的材料形成，该电容电介质用于在AC信号垫247和AC信号垫237之间传递AC信令。填充材料208可以是能够提供第一有源芯片对第二有源芯片的隔离的任何材料，例如，填充材料208和粘附层238可以由诸如DAF的相同的物质形成。
虽然图2和本讨论关注于第一有源芯片210和第二有源芯片220之间的AC芯片至芯片信令，但是可选地，例如，在第一有源芯片210的第一部分211和桥型中介片230之间、以及在第二有源芯片220的第一部分221和桥型中介片230之间的电连接可以使用诸如微凸起的接触体或通过接触体和非接触互连的组合来提供。因此，在一个实施方式中，可以使用用于在第一有源芯片210和第二有源芯片220之间通信DC芯片至芯片信号的微凸起或其他接触体，将桥型中介片230耦接至第一有源芯片210的第一部分211以及第二有源芯片220的第一部分221，并且也可以使用用于在第一有源芯片210和第二有源芯片220之间通信AC芯片至芯片信号的AC信号垫，将桥型中介片230耦接至第一有源芯片210的第一部分211以及第二有源芯片220的第一部分221。
继续至图3，图3示出了包括非接触桥型中介片的半导体封装的另一个实施方式的截面图。如图3所示，半导体封装300包括具有第一部分311和第二部分312第一有源芯片310、具有第一部分321和第二部分322第二有源芯片320、在图3中表示为的非接触性桥型中介片的桥型中介片330以及封装基板302。如图3中进一步所示，桥型中介片230具有面向第一有源芯片210和第二有源芯片320分别的第一部分311和321的第一表面331，并且包括中介片电介质332，该中介片电介质332具有在其中形成的中介片内布线痕迹334以及AC信号垫337。图3中还示出了焊球342、AC信号垫347、将桥型中介片330固定至封装基板302的DAF304以及将桥型中介片330固定至第一有源芯片310的第一部分311以及第二有源芯片320的第一部分321的粘附层338。
第一有源芯片310、第二有源芯片320、焊球342、DAF304以及封装基板302分别对应在图1A、图1B和图1C中的第一有源芯片110、第二有源芯片120、焊球142、DAF104以及封装基板102，并且可以共享由以上那些对应特征所属的特性。此外，在图3中，AC信号垫347和粘附层338分别对应在图2中的AC信号垫247和粘附层238。在图3中，具有第一表面331并且包括中介片电介质332、中介片内布线痕迹334以及AC信号垫337的桥型中介片330，结构上对应于在图2中的具有第一表面231并且包括中介片电介质232、中介片内布线痕迹234以及AC信号垫237的桥型中介片230，并且可以共享由先前那些对应特征所属的特性。例如，类似于中介片电介质232，在一个实施方式中，图3中的中介片332可以由ABFTM形成。然而，应注意与图2中所示的构造相反，类似于图1A、图1B和图1C所示的构造，在半导体封装300中，第一有源芯片310的第一部分311和第二有源芯片320的第一部分321位于桥型中介片330之上。
如图3中所示，桥型中介片300的第一表面331包括AC信号垫337。此外如图3中所示，第一有源芯片310的第一部分311面向桥型中介片330的第一表面331，并且第二有源芯片310的第一部分321也面向桥型中介片330的第一表面331。根据图3中所示的实施方式，第一有源芯片310和第二有源芯片320被配置为采用桥型中介片330的AC信号垫337来通信AC芯片至芯片信号。此外，第一有源芯片310和第二有源芯片320被配置为采用焊球342而不采用半导体通孔（TSV）将电信号通信至封装基板302。
如在图1A、图1B和图1C中所示的实施方式的情况下，图3中的半导体封装300可以通过增加钝化层和/或导电柱或导电杆来修改，该增加的钝化层和/或导电柱或导电杆分别对应于图1B和图1C中所示的钝化层148和导电柱146。此外，虽然图3示出了在第一有源芯片310和第二有源芯片320之间的AC芯片至芯片信令（信号传递），但是可选地，在第一有源芯片310的第一部分311和桥型中介片330之间以及在第二有源芯片320的第一部分320和桥型中介片330之间的电连接，例如可以使用诸如微凸起（对应于图1A、图1B和图1C中的微凸起144）的接触体，或通过AC信号垫和诸如微凸起的接触体的组合来提供。随后，在一个实施方式中，可以使用用于在第一有源芯片310和第二有源芯片320之间通信DC芯片至芯片信号的微凸起或其他接触体，将桥型中介片330耦接至第一有源芯片310的第一部分311以及第二有源芯片320的第一部分321，并且也可以使用用于在第一有源芯片310和第二有源芯片320之间通信AC芯片至芯片信号的AC信号垫，将桥型中介片耦接至第一有源芯片310的第一部分311以及第二有源芯片320的第一部分321。
因此，通过使用由中介片电介质形成的桥型中介片，本文中公开的概念的各种实施方式有利地实现了通过中介片的泄漏被基本上消除的半导体封装。此外，描述的实施方式有利地公开了省略了TVS的半导体封装。因此，本文中公开的概念和实施方式能够避免在传统半导体封装方案中的经过TSV的信号的不利影响。
从以上描述中显而易见的是，多种技术可以用于实现在本申请中描述的概念而不偏离这些概念的范围。此外，虽然具体参考了特定的实施方式来描述概念，但是本领域的普通技术人员应当理解，在不偏离这些概念的实质和范围的条件下，可以在形式和细节上进行改变。因此，所描述的实施方式在所有方面都应当被认为是示例性的而非限制性的。还需要理解的是，本申请不受本文中描述的具体实施方式的限制，而在不偏离本公开的范围的条件下，多种重新配置、修改和替代都是可行的。

Claims (10)

1.一种半导体封装，包括：
桥型中介片；
第一有源芯片，具有位于所述桥型中介片之上的第一部分，以及不位于所述桥型中介片之上的第二部分；
第二有源芯片，具有位于所述桥型中介片之上的第一部分，以及不位于所述桥型中介片之上的第二部分；
所述第一有源芯片的所述第二部分和所述第二有源芯片的所述第二部分包括安装在封装基板上的焊球；
所述第一有源芯片和所述第二有源芯片采用所述焊球而不采用半导体通孔将电信号通信至所述封装基板。
2.根据权利要求1所述的半导体封装，其中，所述第一有源芯片和第二有源芯片通过所述桥型中介片来通信芯片至芯片信号。
3.根据权利要求1所述的半导体封装，其中，所述第一有源芯片通过采用在所述桥型中介片中的AC信号垫来将AC信号通信至所述第二有源芯片。
4.根据权利要求1所述的半导体封装，其中，所述桥型中介片由中介片电介质形成，所述中介片电介质具有在其中形成的中介片内布线痕迹。
5.一种半导体封装，包括：
桥型中介片；
第一有源芯片，具有位于所述桥型中介片之上的第一部分，以及不位于所述桥型中介片之上的第二部分；
第二有源芯片，具有位于所述桥型中介片之上的第一部分，以及不位于所述桥型中介片之上的第二部分；
所述第一有源芯片的所述第二部分和所述第二有源芯片通过所述桥型中介片来通信芯片至芯片信号；
封装基板，位于所述第一有源芯片和所述第二有源芯片之下，所述第一有源芯片和所述第二有源芯片采用接合配线将电信号通信至所述封装基板。
6.根据权利要求5所述的半导体封装，其中，所述第一有源芯片通过所述桥型中介片将DC信号通信至所述第二有源芯片。
7.根据权利要求5所述的半导体封装，其中，所述第一有源芯片通过采用在所述桥型中介片中的AC信号垫将AC信号通信至所述第二有源芯片。
8.一种半导体封装，包括：
桥型中介片，具有包括AC信号垫的第一表面；
第一有源芯片，具有面向所述桥型中介片的所述第一表面的第一部分；
第二有源芯片，具有面向所述桥型中介片的所述第一表面的第一部分；
所述第一有源芯片和所述第二有源芯片采用所述桥型中介片的所述AC信号垫来通信AC芯片至芯片信号。
9.根据权利要求8所述的半导体封装，其中，所述第一有源芯片和所述第二有源芯片被配置为通过所述桥型中介片来通信DC芯片至芯片信号。
10.根据权利要求8所述的半导体封装，其中，所述桥型中介片由中介片电介质形成，所述中介片电介质具有在其中形成的中介片内布线痕迹。
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US20150235992A1 (en) 2015-08-20
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