CN103296008B - Tsv或tgv转接板,3d封装及其制备方法 - Google Patents
Tsv或tgv转接板,3d封装及其制备方法 Download PDFInfo
- Publication number
- CN103296008B CN103296008B CN201210042080.8A CN201210042080A CN103296008B CN 103296008 B CN103296008 B CN 103296008B CN 201210042080 A CN201210042080 A CN 201210042080A CN 103296008 B CN103296008 B CN 103296008B
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- China
- Prior art keywords
- keyset
- tsv
- tgv
- ebg
- shielding construction
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 238000005538 encapsulation Methods 0.000 title abstract description 19
- 238000010276 construction Methods 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 230000004888 barrier function Effects 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 22
- 230000000737 periodic effect Effects 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 14
- 238000010168 coupling process Methods 0.000 abstract description 14
- 238000005859 coupling reaction Methods 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 19
- 238000005476 soldering Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000036244 malformation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 206010044565 Tremor Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210042080.8A CN103296008B (zh) | 2012-02-22 | 2012-02-22 | Tsv或tgv转接板,3d封装及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210042080.8A CN103296008B (zh) | 2012-02-22 | 2012-02-22 | Tsv或tgv转接板,3d封装及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103296008A CN103296008A (zh) | 2013-09-11 |
CN103296008B true CN103296008B (zh) | 2016-06-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201210042080.8A Active CN103296008B (zh) | 2012-02-22 | 2012-02-22 | Tsv或tgv转接板,3d封装及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN103296008B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105428260B (zh) * | 2015-12-22 | 2017-12-19 | 成都锐华光电技术有限责任公司 | 一种基于载体的扇出2.5d/3d封装结构的制造方法 |
CN105428331B (zh) * | 2015-12-22 | 2018-04-20 | 成都锐华光电技术有限责任公司 | 一种基于载体的扇出2.5d/3d封装结构 |
CN106298732A (zh) * | 2016-09-29 | 2017-01-04 | 中国电子科技集团公司第四十三研究所 | 一种用于系统级封装的转接板结构 |
CN106356350B (zh) * | 2016-10-11 | 2019-04-05 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | 一种基于硅通孔互连的系统级封装的电磁耦合抑制方法 |
CN108389838A (zh) * | 2018-02-08 | 2018-08-10 | 华进半导体封装先导技术研发中心有限公司 | 一种芯片封装结构及芯片封装方法 |
CN109935604B (zh) * | 2019-02-26 | 2021-05-11 | 厦门云天半导体科技有限公司 | 一种集成再布线转接板的三维芯片封装结构及其制作方法 |
CN110071047B (zh) * | 2019-04-28 | 2020-12-18 | 北京航天控制仪器研究所 | 一种微系统集成应用的硅基转接板制作方法 |
WO2021119924A1 (zh) * | 2019-12-16 | 2021-06-24 | 华为技术有限公司 | 一种芯片堆叠结构及其制作方法 |
CN113035826B (zh) * | 2021-02-23 | 2022-08-19 | 青岛歌尔智能传感器有限公司 | 封装模组、封装模组的制作方法及电子设备 |
CN113140538A (zh) * | 2021-04-21 | 2021-07-20 | 上海闻泰信息技术有限公司 | 转接板、封装结构及转接板的制作方法 |
CN115633543A (zh) * | 2021-05-13 | 2023-01-20 | 华为技术有限公司 | 芯片封装结构及封装系统 |
CN114937633B (zh) * | 2022-07-25 | 2022-10-18 | 成都万应微电子有限公司 | 一种射频芯片系统级封装方法及射频芯片系统级封装结构 |
CN115332195B (zh) * | 2022-10-13 | 2023-01-31 | 江苏长电科技股份有限公司 | 双面SiP封装结构及其制作方法 |
CN116435293B (zh) * | 2023-06-15 | 2023-09-08 | 广东气派科技有限公司 | 双面打线的键合、倒装组合堆叠芯片结构及制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102281748A (zh) * | 2010-06-08 | 2011-12-14 | 三星电机株式会社 | Emi噪声屏蔽板 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200818451A (en) * | 2006-06-02 | 2008-04-16 | Renesas Tech Corp | Semiconductor device |
TW200814871A (en) * | 2006-09-01 | 2008-03-16 | Univ Nat Taiwan | Substrate for high-speed circuit |
KR101086856B1 (ko) * | 2008-04-16 | 2011-11-25 | 주식회사 하이닉스반도체 | 반도체 집적 회로 모듈 및 이를 구비하는 pcb 장치 |
JPWO2010038478A1 (ja) * | 2008-10-02 | 2012-03-01 | 日本電気株式会社 | 電磁バンドギャップ構造、これを備える素子、基板、モジュール、半導体装置及びこれらの製造方法 |
-
2012
- 2012-02-22 CN CN201210042080.8A patent/CN103296008B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102281748A (zh) * | 2010-06-08 | 2011-12-14 | 三星电机株式会社 | Emi噪声屏蔽板 |
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Publication number | Publication date |
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CN103296008A (zh) | 2013-09-11 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NATIONAL CENTER FOR ADVANCED PACKAGING Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20150228 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 214135 WUXI, JIANGSU PROVINCE |
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TA01 | Transfer of patent application right |
Effective date of registration: 20150228 Address after: Taihu international science and Technology Park in Jiangsu province Wuxi City Linghu road 214135 Wuxi national hi tech Industrial Development Zone No. 200 Chinese Sensor Network International Innovation Park building D1 Applicant after: National Center for Advanced Packaging Co., Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Applicant before: Institute of Microelectronics, Chinese Academy of Sciences |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170825 Address after: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee after: Shanghai State Intellectual Property Services Co., Ltd. Address before: Taihu international science and Technology Park in Jiangsu province Wuxi City Linghu road 214135 Wuxi national hi tech Industrial Development Zone No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee before: National Center for Advanced Packaging Co., Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191206 Address after: 214028 Jiangsu New District of Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee after: National Center for Advanced Packaging Co., Ltd. Address before: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee before: Shanghai State Intellectual Property Services Co., Ltd. |