CN108292654A - 具有利用嵌入微电子衬底中的微电子桥连接的多个微电子器件的微电子结构 - Google Patents

具有利用嵌入微电子衬底中的微电子桥连接的多个微电子器件的微电子结构 Download PDF

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Publication number
CN108292654A
CN108292654A CN201580084531.6A CN201580084531A CN108292654A CN 108292654 A CN108292654 A CN 108292654A CN 201580084531 A CN201580084531 A CN 201580084531A CN 108292654 A CN108292654 A CN 108292654A
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China
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microelectronic
microelectronic component
microelectronics
bridge
component
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CN201580084531.6A
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English (en)
Inventor
E.李
T.戈塞林
Y.富田
S.利夫
A.艾坦
M.萨尔塔斯
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Intel Corp
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Intel Corp
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Priority to CN202211742643.4A priority Critical patent/CN116110887A/zh
Publication of CN108292654A publication Critical patent/CN108292654A/zh
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Abstract

一种微电子结构包括：微电子衬底，其具有第一表面和从微电子衬底第一表面延伸到衬底中的腔；附接至微电子衬底第一表面的第一微电子器件和第二微电子器件；以及设置在微电子衬底腔内且附接至第一微电子器件和第二微电子器件的微电子桥。在一个实施例中，该微电子结构可以包括从第一微电子器件和第二微电子器件形成的重建晶圆。在另一实施例中，助焊剂材料可以在第一微电子器件和微电子桥之间以及在第二微电子器件和微电子桥之间延伸。

Description

具有利用嵌入微电子衬底中的微电子桥连接的多个微电子器 件的微电子结构
技术领域
本描述的实施例一般地涉及微电子封装制造的领域，并且更特别地涉及包括嵌入衬底中用于微电子器件之间的电信号连接的桥的微电子结构及制造所述微电子结构的方法。
背景技术
微电子工业不断努力产生供在各种电子产品中使用的更快且更小的微电子封装。作为该努力的一部分，已经开发了包含多个器件（诸如微电子小片（dice））的微电子封装。这些多个微电子器件封装在本领域中被称为多器件或多芯片封装（MCP）并且提供以下潜力：在降低的成本下的增加的结构灵活性，但必须这样做使得提供适当的微电子器件至微电子器件互连密度。如本领域技术人员将理解的，互连密度是一个重要的考虑，因为数目不足的微电子器件连接将限制受影响的微电子器件接口的带宽能力，并且因此将降低微电子器件之间的通信效率和能力。
附图说明
在说明书的结束部分中特别地指出并明显地要求保护本公开内容的主题。根据结合附图得到的以下描述和所附权利要求，本公开内容的前述和其他特征将变得更加完全显而易见。要理解，附图仅仅描绘根据本公开内容的若干实施例，并且因此不被视为限制它的范围。通过使用附图将以附加的特异性和细节来描述本公开内容，使得可以更容易地确定本公开内容的优点，在其中：
图1-10图示根据本描述的一个实施例的用于制造包括利用桥电气连接的至少两个微电子器件的微电子结构的方法的横截面视图，其中该桥驻留在微电子器件电气附接至的微电子衬底中的腔内。
图11-16图示根据本描述的一个实施例的用于制造包括利用桥电气连接的至少两个微电子器件的微电子结构的另一方法的横截面视图，其中该桥驻留在微电子器件电气附接至的微电子衬底中的腔内。
图17是制造根据本描述的一个实施例的微电子结构的工艺的流程图。
图18图示根据本描述的一个实施方式的计算设备。
具体实施方式
在下面的详细描述中，参考附图，所述附图通过图示的方式示出在其中可以实践所要求保护的主题的具体实施例。足够详细地描述了这些实施例以使本领域技术人员能够实践主题。要理解，各种实施例，尽管不同，但是不一定是相互排斥的。例如，可以在不脱离所要求保护的主题的精神和范围的情况下在其他实施例内实施在本文中结合一个实施例描述的特定特征、结构或特性。在该说明书内对“一个实施例”或“实施例”的参考意指结合该实施例描述的特定特征、结构或特性包括在涵盖在本描述内的至少一个实施方式中。因此，短语“一个实施例”或“在实施例中”的使用不一定指代同一实施例。此外，要理解，可以在不脱离所要求保护的主题的精神和范围的情况下修改各个元件在每个公开的实施例内的位置或布置。因此，不要以限制的含义来理解下面的详细描述，并且该主题的范围仅由适当解释的所附权利要求连同所附权利要求授权给的等同物的全部范围来限定。在绘图中，相似的数字指代遍及若干视图的相同或类似的元件或功能，并且在其中描绘的元件不一定彼此成比例，而是各个元件可以被放大或缩小以便在本描述的上下文中更容易地理解该元件。
如在本文中使用的术语“在……之上”、“至……”、“在……之间”和“在……上” 可以指代一层相对于其他层的相对位置。一层在另一层“之上”或“上”或者接合“至”另一层可以与其他层直接接触或者可以具有一个或多个居间层。“在各层之间”的一层可以与各层直接接触或者可以具有一个或多个居间层。
本描述的实施例包括制造一种微电子结构，包括：形成第一和第二微电子器件，其中该第一和第二微电子器件中的每一个都包括在其有源表面上的多个高密度互连结构和多个较低密度互连结构；将微电子桥附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构；形成微电子衬底，所述微电子衬底具有从微电子衬底的第一表面延伸至微电子衬底中的腔；以及将第一微电子器件的多个较低密度互连结构和第二微电子器件的多个较低密度互连结构电气附接至微电子衬底的第一表面，其中该微电子桥延伸至微电子衬底腔中。
本描述的实施例可以通过利用嵌入在微电子衬底中的微电子桥而实现微电子封装内的结构的密度定标，所述微电子封装可以代表相比于现有技术世代的显著改进。这些微电子桥支持从第一微电子器件至第二微电子器件的密集微电子器件至微电子器件互连。因此，结果得到的微电子封装可能比仅用微电子衬底内的导电路线（route）互连的微电子封装小得多。
图1-11图示根据本描述的一个实施例的制造微电子结构的方法。如在图1中示出的，可以形成多个微电子器件，其被示出为第一微电子器件1101和第二微电子器件1102，其中每个微电子器件1101、1102都可以包括有源表面112、相对的背表面114和在微电子器件有源表面112和微电子器件背表面114之间延伸的至少一个侧面116。每个微电子器件1101、1102都可以包括在微电子器件有源表面112上的多个高密度互连结构122（诸如凸块或柱）和多个较低密度互连结构124（诸如凸块或柱）。要理解，该高密度互连结构122和较低密度互连结构124可以与第一微电子器件1101和第二微电子器件1102内的集成电路（未被示出）电气通信。第一微电子器件1101和第二微电子器件1102可以是任何适当的微电子器件（诸如微电子小片），包括但不限于微处理器、芯片集、图形设备、无线设备、存储器设备、专用集成电路设备等等。
如为了本描述的目的而限定的，“较低密度互连结构”中的术语“较低密度”是相对于“高密度互连结构”中的术语“高密度”的，因为较低密度互连结构124具有比高密度互连结构122之间的间距/间隔P2更大的在较低密度互连结构124之间的间距/间隔P1，并且反之亦然。
如在图2中示出的，第一微电子器件1101和第二微电子器件1102可以在载体132上对齐。在一个实施例中，第一微电子器件1101和第二微电子器件1102可以对齐，其中它们的有源表面112面向载体132，并且用设置在载体132与第一微电子器件1101和第二微电子器件1102的有源表面112之间的粘附层134固定在适当位置。在一个实施例中，第一微电子器件1101和第二微电子器件1102可以对齐使得第一微电子器件1101的多个高密度互连结构122直接邻近第二微电子器件1102的高密度互连结构122。如本领域技术人员将理解的，可以在预限定的间隔和取向的情况下利用精确拾取和放置装备来确保适当的对齐。
如在图3中示出的，可以将密封剂材料118沉积在第一微电子器件1101和第二微电子器件1102之上，使得该密封剂材料118接触第一微电子器件1101和第二微电子器件1102的背表面114和侧面116。在一个实施例中，可以使用利用低热膨胀系数材料的晶圆级压缩模塑来沉积密封剂材料118。该密封剂材料118可以是任何适当的材料，包括但不限于具有或具有适当填充物的聚合物材料。
如在图4中示出的，该密封剂材料118可以被固化或部分固化，并且可以通过移除密封剂材料118的邻近第一微电子器件1101和第二微电子器件1102的背表面114的一部分来使该结构薄化以暴露其背表面114。该移除留下接触第一微电子器件1101和第二微电子器件1102的侧面116的密封剂材料118，由此形成被称为重建晶圆120的结构。要理解，可以在密封剂材料118的该部分的移除期间或之后移除第一微电子器件1101和第二微电子器件1102的一部分以降低重建晶圆120的厚度T。在一个实施例中，可以在载体132（参见图4）和粘附层134（参见图4）被移除之前执行密封剂材料118的该部分的移除以及第一微电子器件1101和第二微电子器件1102的该部分的移除。在另一实施例中，可以在载体132（参见图4）和粘附层134（参见图4）被移除之后执行密封剂材料118的该部分的移除以及第一微电子器件1101和第二微电子器件1102的该部分的移除，其中可以在密封剂材料118的该部分的移除以及第一微电子器件1101和第二微电子器件1102的该部分的移除之前将第一微电子器件1101和第二微电子器件1102附接至背面研磨带（未被示出）。可以通过本领域中已知的任何技术（包括但不限于机械研磨机、蚀刻、化学机械平面化等等）来实现密封剂材料118的该部分的移除以及第一微电子器件1101和第二微电子器件1102的该部分的移除。如本领域技术人员将理解的，材料移除可以改进热性能并且可以使重建晶圆120 平面化。
如在图5中示出的，可以形成包括第一表面142、相对的第二表面144以及在第一表面142和第二表面144之间延伸的至少一个侧面146的微电子桥140。该微电子桥140可以包括在微电子桥第一表面142上的多个互连结构152，诸如凸块或柱。如图示的，该微电子桥140可以包括在其中形成以连接相应微电子桥互连结构152的多个导电路线148。如进一步图示的，可以通过本领域中已知的任何适当工艺（诸如在微小但均匀间距下使用电镀技术）来在互连结构154上施加焊料材料154。
如在图6中示出的，该微电子桥140可以附接至第一微电子器件1101的高密度互连结构122和第二微电子器件1102的高密度互连结构122以在其之间形成电气连接。在一个实施例中，该微电子桥140的多个互连结构152处于与第一微电子器件1101和第二微电子器件1102的多个高密度互连结构122的镜像配置，并且利用焊料材料154通过热压缩接合附接于其。在另一实施例中，当利用低热膨胀系数的密封剂材料118因此微电子桥140和重建晶圆120之间的热膨胀失配是极小的时，尽管微电子桥互连结构152的高密度/微小间距，但是可以利用传统的芯片附接模块工艺来附接该微电子桥140。用于形成微电子桥140的工艺和材料在本领域中是公知的，并且为了简洁和简明起见将不在这里描述或图示。
如在图7中示出的，可以形成在其中具有腔170的微电子衬底160，该腔170从微电子衬底160的第一表面162延伸到微电子衬底160中，其中由至少一个侧壁174和底表面172限定微电子衬底腔170。该微电子衬底160可以进一步包括在微电子衬底第一表面162中或其上形成的多个接合衬垫164。可以通过本领域中已知的任何已知技术（包括但不限于激光烧蚀、受控深度布线、蚀刻等等）来形成该微电子衬底腔170。
该微电子衬底160可以是任何适当的微电子衬底，包括但不限于插入器、母板等等。进一步地，该微电子衬底160可以包括多个介电层（未被示出），其具有由形成在介电层（未被示出）上的导电迹线（未被示出）形成的多个导电路线148，其与穿过介电层（未被示出）形成的导电通孔（未被示出）连接。用于形成微电子衬底160的工艺和材料在本领域中是公知的，并且为了简洁和简明起见将不在这里描述或图示。
如在图8中示出的，图6的结构可以附接至微电子衬底160，其中第一微电子器件1101的多个较低密度互连结构124和第二微电子器件1102的多个较低密度互连结构124可以电气附接至在微电子衬底第一表面162中或其上形成的多个衬底接合衬垫164，其中该微电子桥140延伸至微电子衬底腔170中。在一个实施例中，第一微电子器件1101的多个较低密度互连结构124和第二微电子器件1102的多个较低密度互连结构124处于与多个微电子衬底接合衬垫164的镜像配置，并且利用焊料材料176通过热压缩接合附接于其。在一个实施例中，如在本领域中已知的，可以利用微球工艺来将焊料材料176施加于多个衬底接合衬垫164。
如在图9中示出的，可以在第一微电子器件1101的有源表面112和微电子衬底第一表面162之间、在第二微电子器件1102的有源表面112和微电子衬底第一表面162之间、以及在微电子衬底腔170内设置底部填充材料178，以形成微电子结构180。在一个实施例中，如在图9中图示的，可以在微电子桥140的第二表面144和腔170的底表面172之间设置底部填充材料178。在另一实施例中，如在图10中图示的，可以在第一微电子器件1101和第二微电子器件1102的附接之前在腔170的底表面174上设置粘附材料182（诸如快速固化环氧树脂）以确保该材料被设置在微电子桥140的第二表面144和腔170的底表面172之间。在一个实施例中，可以使用毛细管底部填充工艺来设置底部填充材料178。在另一实施例中，如本领域技术人员将理解的，归因于要被填充的空间的复杂性，可以使用高压辅助固化工艺来设置底部填充材料178。要进一步指出，如所描述的，底部填充材料178是填充该空间的单一材料。
图11-16图示根据本描述的另一实施例的制造微电子结构的方法。如在图11中示出的，如关于图1示出且讨论的第一微电子器件1101和第二微电子器件1102可以在载体202（诸如热压缩接合基座）中对齐。在一个实施例中，第一微电子器件1101和第二微电子器件1102可以对齐，其中它们的背部表面114邻接载体202。在一个实施例中，第一微电子器件1101和第二微电子器件1102可以对齐使得第一微电子器件1101的多个高密度互连结构122直接邻近第二微电子器件1102的高密度互连结构122。如本领域技术人员将理解的，可以在预限定的间隔和取向的情况下利用精确拾取和放置装备以确保适当的对齐。
如在图12中示出的，可以将助焊剂材料204（诸如环氧树脂助焊剂材料）分配到第一微电子器件1101的高密度互连结构122和第一微电子器件1102的高密度互连结构122上。如在图13中示出的，可以将如关于图5讨论的微电子桥140附接至第一微电子器件1101的高密度互连结构122和第二微电子器件1102的高密度互连结构122以在其之间形成电气连接，其中该助焊剂材料204在第一微电子器件1101和微电子桥140之间、以及在第二微电子器件1102和微电子桥140之间延伸。在一个实施例中，该微电子桥140的多个互连结构152处于与第一微电子器件1101和第二微电子器件1102的多个高密度互连结构122的镜像配置，并且利用焊料材料154通过热压缩接合附接于其。
如在图14中示出的，图13的结构可以从载体202（参见图13）移除并且可以附接至如关于图7讨论的微电子衬底160，其中可以将第一微电子器件1101的多个较低密度互连结构124和第二微电子器件1102的多个较低密度互连结构124电气附接至形成在微电子衬底第一表面162中或其上的多个衬底接合衬垫164，其中该微电子桥140延伸至微电子衬底腔170中。在一个实施例中，第一微电子器件1101的多个较低密度互连结构124和第二微电子器件1102的多个较低密度互连结构124处于与多个微电子衬底接合衬垫164的镜像配置，并且利用焊料材料176通过热压缩接合附接于其。
如在图15中示出的，可以在第一微电子器件1101的有源表面112和微电子衬底第一表面162之间、在第二微电子器件1102的有源表面112和微电子衬底第一表面162之间、以及在微电子衬底腔170内设置底部填充材料178，以形成微电子结构180。
在如图6-10和13-15中图示的一些实施例中，该微电子桥140可以是无源结构，在其中它不具有除了在第一微电子器件1101和第二微电子器件1102之间提供导电路线148之外的功能。在其他实施例中，如在图16中示出的，该微电子桥140可以包括至少一个有源部件214，其除了桥接功能之外还具有其自己的功能，并且因此可以是嵌入微电子桥140中的微电子器件、电阻器、电容器等等。在一个实施例中，如在图16中图示的，该微电子桥140可以具有信号布线层212，其中至少一个有源部件214利用焊料球222和/或导线接合224电气附接至信号布线层212，其中可以将有源部件214密封在介电材料216内。
要指出，本描述的工艺实施例在使微电子桥140与微电子衬底160结合之前将微电子桥140附接至第一微电子器件1101和第二微电子器件1102。与其中在附接第一微电子器件1101和第二微电子器件1102之前将微电子桥140嵌入微电子衬底160的工艺相比，此类工艺可以具有优点。例如，如果微电子桥140被嵌入微电子衬底160中，则将需要第一微电子器件1101和第二微电子器件1102同时附接至混合的间距互连，这将使一步工艺不再是用来产生芯片附接工艺所需的均匀凸块高度的可行选项。如本领域技术人员将理解的，可能需要管芯上焊料工艺或多步平版印刷和电镀工艺。然而，归因于工艺边缘性，混合间距配置和严格的凸块高度均匀性要求使管芯上焊料工艺非常难以开展，特别是对于更大的微电子结构而言。
要理解，尽管关于图1-16的实施例的详细描述涉及两个微电子器件1101和1102、一个微电子桥140和微电子衬底160中的一个腔170，但是本描述的主题不被如此限制，因为可以使用任何数目的微电子器件、微电子桥和微电子衬底腔。在一个实施例中，可以将三个微电子器件附接至三角形桥。在另一实施例中，可以将六个微电子器件附接至六角形桥。在另一实施例中，可以将多于一个微电子桥设置在单个微电子衬底腔中。在又另一实施例中，可以在单个微电子衬底中形成多个腔。
图17是根据本描述的一个实施例的制造微电子结构的工艺300的流程图。如在框302中阐述的，可以形成第一和第二微电子器件，其中该第一和第二微电子器件中的每一个都包括在其有源表面上的多个高密度互连结构和多个较低密度互连结构。如在框304中阐述的，可以将微电子桥附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构。如在框306中阐述的，可以形成微电子衬底，所述微电子衬底具有在其中限定的从微电子衬底的第一表面延伸的腔，其中该腔包括至少一个侧壁和底表面。如在框308中阐述的，可以将第一微电子器件的多个较低密度互连结构和第二微电子器件的多个较低密度互连结构电气附接至微电子衬底的第一表面，其中该微电子桥延伸至微电子衬底腔中。
图18图示根据本描述的一个实施方式的计算设备400。该计算设备400容纳板402。该板可以包括许多微电子部件，其包括但不限于处理器404、至少一个通信芯片406A、406B、易失性存储器408（例如DRAM）、非易失性存储器410（例如ROM）、闪速存储器412、图形处理器或CPU 414、数字信号处理器（未被示出）、密码处理器（未被示出）、芯片集416、天线、显示器（触摸屏显示器）、触摸屏控制器、电池、音频编解码器（未被示出）、视频编解码器（未被示出）、功率放大器（AMP）、全球定位系统（GPS）设备、罗盘、加速度计（未被示出）、陀螺仪（未被示出）、扬声器（未被示出）、相机、和大容量存储设备（未被示出）（诸如硬盘驱动器、压缩盘（CD）、数字多功能盘（DVD）、等等）。该微电子部件中的任一个可以物理且电气地耦合至板402。在一些实施方式中，该微电子部件中的至少一个可以是处理器404的一部分。
该通信芯片406A、406B实现用于数据去到和来自计算设备400的传递的无线通信。术语“无线”以及其派生词可以被用来描述可通过使用调制电磁辐射通过非固态介质来传送数据的电路、设备、系统、方法、技术、通信通道等等。该术语不暗示相关联的设备不包含任何导线，尽管在某些实施例中它们可能不包含任何导线。通信芯片306可以实施许多无线标准或协议中的任一个，包括但不限于Wi-Fi（IEEE 802.11家族）、WiMAX (IEEE 802.16家族）、IEEE 802.20、长期演进 (LTE), Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、蓝牙、其派生物，以及被指定为3G、4G、5G及以上的任何其他无线协议。该计算设备400可以包括多个通信芯片406A、406B。例如，第一通信芯片406A可以专用于更短范围无线通信（诸如WiFi和蓝牙），并且第二通信芯片406B可以专用于更长范围无线通信（诸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO、以及其他）。
术语“处理器”可以指代处理来自寄存器和/或存储器的电子数据以将该电子数据转换为可存储在寄存器和/或存储器中的其他电子数据的任何设备或设备的部分。
计算设备400内的微电子部件中的任一个可以包括利用根据以上描述的实施方式形成的嵌入微电子衬底中的微电子桥彼此连接的微电子器件。
在各个实施方式中，该计算设备400可以是膝上型电脑、上网本、笔记本电脑、超级本、智能电话、平板电脑、个人数字助理（PDA）、超移动PC、移动电话、桌上型计算机、服务器、打印机、扫描仪、监视器、机顶盒、娱乐控制单元、数码相机、便携式音乐播放器或数字视频记录仪。在另外的实施方式中，该计算设备400可以是处理数据的任何其他电子设备。
要理解，不一定将本描述的主题限于图1-18中图示的具体应用。如本领域技术人员将理解的，可以将本主题应用于其他微电子器件和组件应用、以及任何适当的电子应用。
下面的示例关于另外的实施例。可以在一个或多个实施例中的任何地方使用该示例中的细节。
在示例1中，一种形成微电子结构的方法可以包括：形成第一和第二微电子器件，其中该第一和第二微电子器件中的每一个都包括在其有源表面上的多个高密度互连结构和多个较低密度互连结构；将微电子桥附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构；形成微电子衬底，所述微电子衬底具有在其中限定的从微电子衬底的第一表面延伸的腔，其中该腔包括至少一个侧壁和底表面；以及将第一微电子器件的多个较低密度互连结构和第二微电子器件的多个较低密度互连结构电气附接至微电子衬底的第一表面，其中该微电子桥延伸至微电子衬底腔中。
在示例2中，示例1的主题可以可选地包括：微电子桥电气连接第一微电子器件和第二微电子器件。
在示例3中，示例1的主题可以可选地包括：微电子桥包括在其中的多个导电路线。
在示例4中，示例1的主题可以可选地包括：微电子桥包括嵌入其中的至少一个微电子器件。
在示例5中，示例1的主题可以可选地包括：将底部填充材料设置在第一微电子器件有源表面和微电子衬底第一表面之间、在第二微电子器件有源表面和微电子衬底第一表面之间、以及在微电子衬底腔内。
在示例6中，示例1至5中的任一个的主题可以可选地包括：在附接微电子桥之前从第一微电子器件和第二微电子器件形成重建晶圆。
在示例7中，示例6的主题可以可选地包括：形成重建晶圆包括将密封剂材料设置在第一微电子器件的至少一侧和第二微电子器件的至少一侧之间。
在示例8中，示例7的主题可以可选地包括：使第一微电子器件和第二微电子器件在载体上对齐，其中第一微电子器件和第二器件中的每一个的有源表面面向载体；以及其中设置密封剂材料包括将密封剂材料设置在第一微电子器件的背表面以及第二微电子器件的背表面之上。
在示例9中，示例8的主题可以可选地包括：使第一微电子器件和第二微电子器件在载体上对齐进一步包括利用粘附层将第一微电子器件和第二微电子器件粘附至载体。
在示例10中，示例8的主题可以可选地包括：移除密封剂材料的一部分以暴露第一微电子器件的背表面和第二微电子器件的背表面。
在示例11中，示例10的主题可以可选地包括：移除第一微电子器件和第二微电子器件的一部分。
在示例12中，示例1至5中的任一个的主题可以可选地包括：将微电子桥附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构包括使第一微电子器件和第二微电子器件中的每一个的背表面在载体上对齐以及附接微电子桥。
在示例13中，示例12的主题可以可选地包括：将助焊剂材料设置在第一微电子器件的多个高密度互连表面和第二微电子器件的多个高密度互连表面上；以及通过该助焊剂材料来附接微电子桥。
示例14，一种微电子结构，其可以包括形成第一和第二微电子器件，其中该第一和第二微电子器件中的每一个都包括在其有源表面上的多个高密度互连结构和多个较低密度互连结构；附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构的微电子桥；微电子衬底，所述微电子衬底具有在其中限定的从微电子衬底的第一表面延伸的腔，其中该腔包括至少一个侧壁和底表面，其中该第一微电子器件的多个较低密度互连结构和第二微电子器件的多个较低密度互连结构电气附接至微电子衬底的第一表面，以及其中该微电子桥延伸至微电子衬底腔中；以及在第一微电子器件有源表面和微电子衬底第一表面之间、在第二微电子器件有源表面和微电子衬底第一表面之间、以及在微电子衬底腔内的底部填充材料。
在示例15中，示例14的主题可以可选地包括：该微电子桥电气连接第一微电子器件和第二微电子器件。
在示例16中，示例14的主题可以可选地包括：该微电子桥包括在其中的多个导电路线。
在示例17中，示例14的主题可以可选地包括：该微电子桥包括嵌入其中的至少一个微电子器件。
在示例18中，示例14至17中的任一个的主题可以可选地包括：从第一微电子器件和第二微电子器件形成的重建晶圆。
在示例19中，示例18的主题可以可选地包括：该重建晶圆包括在第一微电子器件的至少一侧和第二微电子器件的至少一侧之间的密封剂材料。
在示例20中，示例14的主题可以可选地包括：设置在第一微电子器件和微电子桥之间、以及在第二微电子器件和微电子桥之间的助焊剂材料。
在示例21中，一种计算设备可以包括：板和附接至该板的微电子结构，其中该微电子结构包括第一和第二微电子器件，其中该第一和第二微电子器件中的每一个都包括在其有源表面上的多个高密度互连结构和多个较低密度互连结构；附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构的微电子桥；微电子衬底，所述微电子衬底具有在其中限定的从微电子衬底的第一表面延伸的腔，其中该腔包括至少一个侧壁和底表面，其中该第一微电子器件的多个较低密度互连结构和第二微电子器件的多个较低密度互连结构电气附接至微电子衬底的第一表面，以及其中该微电子桥延伸至微电子衬底腔中；以及在第一微电子器件有源表面和微电子衬底第一表面之间、在第二微电子器件有源表面和微电子衬底第一表面之间、以及在微电子衬底腔内的底部填充材料。
在示例22中，示例21的主题可以可选地包括：该微电子桥电气连接第一微电子器件和第二微电子器件。
在示例23中，示例21的主题可以可选地包括：该微电子桥包括在其中的多个导电路线。
在示例24中，示例21的主题可以可选地包括：该微电子桥包括嵌入其中的至少一个微电子器件。
在示例25中，示例21至24中的任一个的主题可以可选地包括：从第一微电子器件和第二微电子器件形成的重建晶圆。
在示例26中，示例25的主题可以可选地包括：该重建晶圆包括在第一微电子器件的至少一侧和第二微电子器件的至少一侧之间的密封剂材料。
在示例27中，示例21的主题可以可选地包括：设置在第一微电子器件和微电子桥之间、以及在第二微电子器件和微电子桥之间的助焊剂材料。
已经这样详细地描述了本描述的实施例，要理解由所附权利要求限定的本描述不由在上面的描述中阐述的特定细节来限制，因为在不脱离本描述的精神或范围的情况下其许多显然的变化是可能的。

Claims (25)

1.一种形成微电子结构的方法，包括：
形成第一和第二微电子器件，其中该第一和第二微电子器件中的每一个都包括在其有源表面上的多个高密度互连结构和多个较低密度互连结构；
将微电子桥附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构；
形成微电子衬底，所述微电子衬底具有在其中限定的从微电子衬底的第一表面延伸的腔，其中该腔包括至少一个侧壁和底表面；以及
将第一微电子器件的多个较低密度互连结构和第二微电子器件的多个较低密度互连结构电气附接至微电子衬底的第一表面，其中该微电子桥延伸至微电子衬底腔中。
2.根据权利要求1所述的方法，其中该微电子桥电气连接第一微电子器件和第二微电子器件。
3.根据权利要求1所述的方法，其中该微电子桥包括在其中的多个导电路线。
4.根据权利要求1所述的方法，其中该微电子桥包括嵌入其中的至少一个微电子器件。
5.根据权利要求1所述的方法，进一步包括将底部填充材料设置在第一微电子器件有源表面和微电子衬底第一表面之间、在第二微电子器件有源表面和微电子衬底第一表面之间、以及在微电子衬底腔内。
6.根据权利要求1至5中的任一项所述的方法，进一步包括在附接微电子桥之前从第一微电子器件和第二微电子器件形成重建晶圆。
7.根据权利要求6所述的方法，其中形成重建晶圆包括将密封剂材料设置在第一微电子器件的至少一侧和第二微电子器件的至少一侧之间。
8.根据权利要求7所述的方法，进一步包括使第一微电子器件和第二微电子器件在载体上对齐，其中第一微电子器件和第二器件中的每一个的有源表面面向载体；以及其中设置密封剂材料包括将密封剂材料设置在第一微电子器件的背表面以及第二微电子器件的背表面之上。
9.根据权利要求8所述的方法，其中使第一微电子器件和第二微电子器件在载体上对齐进一步包括利用粘附层将第一微电子器件和第二微电子器件粘附至载体。
10.根据权利要求8所述的方法，进一步包括移除密封剂材料的一部分以暴露第一微电子器件的背表面和第二微电子器件的背表面。
11.根据权利要求10所述的方法，进一步包括移除第一微电子器件和第二微电子器件中的一部分。
12.根据权利要求1-5中的任一项所述的方法，其中将微电子桥附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构包括使第一微电子器件和第二微电子器件中的每一个的背表面在载体上对齐以及附接微电子桥。
13.根据权利要求12所述的方法，进一步包括将助焊剂材料设置在第一微电子器件的多个高密度互连表面和第二微电子器件的多个高密度互连表面上；以及通过该助焊剂材料来附接微电子桥。
14.一种微电子结构，包括：
第一和第二微电子器件，其中该第一和第二微电子器件中的每一个都包括在其有源表面上的多个高密度互连结构和多个较低密度互连结构；
附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构的微电子桥；
微电子衬底，所述微电子衬底具有在其中限定的从微电子衬底的第一表面延伸的腔，其中该腔包括至少一个侧壁和底表面，其中该第一微电子器件的多个较低密度互连结构和第二微电子器件的多个较低密度互连结构电气附接至微电子衬底的第一表面，以及其中该微电子桥延伸至微电子衬底腔中；以及
在第一微电子器件有源表面和微电子衬底第一表面之间、在第二微电子器件有源表面和微电子衬底第一表面之间、以及在微电子衬底腔内的底部填充材料。
15.根据权利要求14所述的微电子结构，其中该微电子桥电气连接第一微电子器件和第二微电子器件。
16.根据权利要求14所述的微电子结构，其中该微电子桥包括在其中的多个导电路线。
17.根据权利要求14所述的微电子结构，其中该微电子桥包括嵌入其中的至少一个微电子器件。
18.根据权利要求14至17中的任一项所述的微电子结构，进一步包括从第一微电子器件和第二微电子器件形成的重建晶圆。
19.根据权利要求18所述的微电子结构，其中该重建晶圆包括在第一微电子器件的至少一侧和第二微电子器件的至少一侧之间的密封剂材料。
20.根据权利要求14所述的微电子结构，进一步包括设置在第一微电子器件和微电子桥之间、以及在第二微电子器件和微电子桥之间的助焊剂材料。
21.一种计算设备，包括：
板；
附接至该板的微电子结构，其中该微电子结构包括：
第一和第二微电子器件，其中该第一和第二微电子器件中的每一个都包括在其有源表面上的多个高密度互连结构和多个较低密度互连结构；
附接至第一微电子器件的多个高密度互连结构和第二微电子器件的多个高密度互连结构的微电子桥；
微电子衬底，所述微电子衬底具有在其中限定的从微电子衬底的第一表面延伸的腔，其中该腔包括至少一个侧壁和底表面，其中该第一微电子器件的多个较低密度互连结构和第二微电子器件的多个较低密度互连结构电气附接至微电子衬底的第一表面，以及其中该微电子桥延伸至微电子衬底腔中；以及
在第一微电子器件有源表面和微电子衬底第一表面之间、在第二微电子器件有源表面和微电子衬底第一表面之间、以及在微电子衬底腔内的底部填充材料。
22.根据权利要求21所述的计算设备，其中该微电子桥电气连接第一微电子器件和第二微电子器件。
23.根据权利要求21至22中的任一项所述的计算设备，进一步包括从第一微电子器件和第二微电子器件形成的重建晶圆。
24.根据权利要求23所述的计算设备，其中重建晶圆包括在第一微电子器件的至少一侧和第二微电子器件的至少一侧之间的密封剂材料。
25.根据权利要求21所述的计算设备，进一步包括设置在第一微电子器件和微电子桥之间、以及在第二微电子器件和微电子桥之间的助焊剂材料。
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