CN103140929B - 错列薄膜晶体管及形成错列薄膜晶体管的方法 - Google Patents
错列薄膜晶体管及形成错列薄膜晶体管的方法 Download PDFInfo
- Publication number
- CN103140929B CN103140929B CN201180044614.4A CN201180044614A CN103140929B CN 103140929 B CN103140929 B CN 103140929B CN 201180044614 A CN201180044614 A CN 201180044614A CN 103140929 B CN103140929 B CN 103140929B
- Authority
- CN
- China
- Prior art keywords
- layer
- copper
- film transistor
- oxide layer
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10175294.7 | 2010-09-03 | ||
| EP10175294A EP2426720A1 (en) | 2010-09-03 | 2010-09-03 | Staggered thin film transistor and method of forming the same |
| PCT/EP2011/063712 WO2012028432A1 (en) | 2010-09-03 | 2011-08-09 | Staggered thin film transistor and method of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103140929A CN103140929A (zh) | 2013-06-05 |
| CN103140929B true CN103140929B (zh) | 2015-12-02 |
Family
ID=43104661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180044614.4A Expired - Fee Related CN103140929B (zh) | 2010-09-03 | 2011-08-09 | 错列薄膜晶体管及形成错列薄膜晶体管的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20120056173A1 (enExample) |
| EP (1) | EP2426720A1 (enExample) |
| JP (1) | JP2013541192A (enExample) |
| KR (1) | KR20130102576A (enExample) |
| CN (1) | CN103140929B (enExample) |
| TW (1) | TW201232784A (enExample) |
| WO (1) | WO2012028432A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8962386B2 (en) * | 2011-11-25 | 2015-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6051960B2 (ja) | 2012-03-19 | 2016-12-27 | 株式会社リコー | 導電性薄膜、導電性薄膜形成用塗布液、電界効果型トランジスタ、及び電界効果型トランジスタの製造方法 |
| US8993383B2 (en) * | 2012-06-08 | 2015-03-31 | Panasonic Corporation | Thin-film transistor and method for manufacturing thin-film transistor |
| JP5972065B2 (ja) * | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
| US9379247B2 (en) * | 2012-06-28 | 2016-06-28 | Cbrite Inc. | High mobility stabile metal oxide TFT |
| US8823003B2 (en) * | 2012-08-10 | 2014-09-02 | Apple Inc. | Gate insulator loss free etch-stop oxide thin film transistor |
| WO2014067463A1 (zh) * | 2012-11-02 | 2014-05-08 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置和阻挡层 |
| US9601557B2 (en) | 2012-11-16 | 2017-03-21 | Apple Inc. | Flexible display |
| TWI594333B (zh) * | 2013-12-31 | 2017-08-01 | 國立交通大學 | 降低氧化物薄膜電晶體之接觸電阻的方法 |
| KR102163730B1 (ko) * | 2014-03-25 | 2020-10-08 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
| US9600112B2 (en) | 2014-10-10 | 2017-03-21 | Apple Inc. | Signal trace patterns for flexible substrates |
| KR102260886B1 (ko) * | 2014-12-10 | 2021-06-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 |
| KR102708773B1 (ko) | 2016-12-26 | 2024-09-23 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| CN110678973B (zh) | 2017-06-02 | 2023-09-19 | 应用材料公司 | 碳化硼硬掩模的干式剥除 |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| US11177128B2 (en) | 2017-09-12 | 2021-11-16 | Applied Materials, Inc. | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
| US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
| CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
| US10854483B2 (en) | 2017-11-16 | 2020-12-01 | Applied Materials, Inc. | High pressure steam anneal processing apparatus |
| KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
| CN111699549B (zh) | 2018-01-24 | 2025-03-28 | 应用材料公司 | 使用高压退火的接缝弥合 |
| JP7239598B2 (ja) | 2018-03-09 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 金属含有材料の高圧アニーリングプロセス |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| JP7179172B6 (ja) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 半導体用途の構造体をエッチングするための方法 |
| KR20210077779A (ko) | 2018-11-16 | 2021-06-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 강화된 확산 프로세스를 사용한 막 증착 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1508615A (zh) * | 2002-12-19 | 2004-06-30 | ��ʽ�������Ƹ��� | 电子器件及其制造方法、溅射靶 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06333925A (ja) * | 1993-05-20 | 1994-12-02 | Nippon Steel Corp | 半導体集積回路及びその製造方法 |
| JP4954366B2 (ja) * | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4496518B2 (ja) * | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | 薄膜配線 |
| KR100905662B1 (ko) * | 2003-06-26 | 2009-06-30 | 엘지디스플레이 주식회사 | 액정표시장치 제조 방법 및 배선 구조 |
| KR20070049278A (ko) * | 2005-11-08 | 2007-05-11 | 삼성전자주식회사 | 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법 |
| JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| KR20080037296A (ko) * | 2006-10-25 | 2008-04-30 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
| US7919795B2 (en) * | 2006-12-21 | 2011-04-05 | Samsung Electronics Co., Ltd. | Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate |
| CN101529566B (zh) * | 2006-12-28 | 2011-11-16 | 株式会社爱发科 | 布线膜的形成方法、晶体管及电子装置 |
| KR100858088B1 (ko) * | 2007-02-28 | 2008-09-10 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| JP4871777B2 (ja) * | 2007-04-16 | 2012-02-08 | 株式会社アルバック | エッチング液及びトランジスタ製造方法 |
| JP5121299B2 (ja) * | 2007-05-09 | 2013-01-16 | アルティアム サービシズ リミテッド エルエルシー | 液晶表示装置 |
| KR101102891B1 (ko) * | 2007-09-04 | 2012-01-10 | 삼성전자주식회사 | 배선구조 및 이를 이용한 박막 트랜지스터 |
| TWI360708B (en) * | 2007-12-17 | 2012-03-21 | Au Optronics Corp | Pixel structure, display panel, elecro-optical app |
| KR101296654B1 (ko) * | 2007-12-26 | 2013-08-14 | 엘지디스플레이 주식회사 | 구리 배선, 이를 이용한 평판 표시 장치, 및 그 구리배선의 형성 방법 |
| WO2010013636A1 (ja) * | 2008-07-29 | 2010-02-04 | 株式会社アルバック | 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法 |
| JP5571887B2 (ja) * | 2008-08-19 | 2014-08-13 | アルティアム サービシズ リミテッド エルエルシー | 液晶表示装置及びその製造方法 |
| KR101499239B1 (ko) * | 2008-08-26 | 2015-03-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP5269533B2 (ja) * | 2008-09-26 | 2013-08-21 | 三菱マテリアル株式会社 | 薄膜トランジスター |
| JP5360959B2 (ja) * | 2008-10-24 | 2013-12-04 | 三菱マテリアル株式会社 | バリア膜とドレイン電極膜およびソース電極膜が高い密着強度を有する薄膜トランジスター |
| US8237163B2 (en) * | 2008-12-18 | 2012-08-07 | Lg Display Co., Ltd. | Array substrate for display device and method for fabricating the same |
| CN103456794B (zh) * | 2008-12-19 | 2016-08-10 | 株式会社半导体能源研究所 | 晶体管的制造方法 |
| JP4752927B2 (ja) * | 2009-02-09 | 2011-08-17 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
| WO2010098101A1 (ja) * | 2009-02-27 | 2010-09-02 | 株式会社アルバック | トランジスタ、トランジスタの製造方法及びその製造装置 |
| WO2010125986A1 (en) * | 2009-05-01 | 2010-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101687311B1 (ko) * | 2009-10-07 | 2016-12-16 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
-
2010
- 2010-09-03 EP EP10175294A patent/EP2426720A1/en not_active Withdrawn
- 2010-09-10 US US12/879,593 patent/US20120056173A1/en not_active Abandoned
-
2011
- 2011-08-09 CN CN201180044614.4A patent/CN103140929B/zh not_active Expired - Fee Related
- 2011-08-09 JP JP2013526392A patent/JP2013541192A/ja active Pending
- 2011-08-09 KR KR1020137008425A patent/KR20130102576A/ko not_active Ceased
- 2011-08-09 WO PCT/EP2011/063712 patent/WO2012028432A1/en not_active Ceased
- 2011-08-19 TW TW100129784A patent/TW201232784A/zh unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1508615A (zh) * | 2002-12-19 | 2004-06-30 | ��ʽ�������Ƹ��� | 电子器件及其制造方法、溅射靶 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012028432A1 (en) | 2012-03-08 |
| KR20130102576A (ko) | 2013-09-17 |
| CN103140929A (zh) | 2013-06-05 |
| TW201232784A (en) | 2012-08-01 |
| JP2013541192A (ja) | 2013-11-07 |
| EP2426720A1 (en) | 2012-03-07 |
| US20120056173A1 (en) | 2012-03-08 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 Termination date: 20200809 |
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| CF01 | Termination of patent right due to non-payment of annual fee |