TW201232784A - Staggered thin film transistor and method of forming the same - Google Patents

Staggered thin film transistor and method of forming the same Download PDF

Info

Publication number
TW201232784A
TW201232784A TW100129784A TW100129784A TW201232784A TW 201232784 A TW201232784 A TW 201232784A TW 100129784 A TW100129784 A TW 100129784A TW 100129784 A TW100129784 A TW 100129784A TW 201232784 A TW201232784 A TW 201232784A
Authority
TW
Taiwan
Prior art keywords
layer
copper
oxide
thin film
film transistor
Prior art date
Application number
TW100129784A
Other languages
English (en)
Chinese (zh)
Inventor
Fabio Pieralisi
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201232784A publication Critical patent/TW201232784A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
TW100129784A 2010-09-03 2011-08-19 Staggered thin film transistor and method of forming the same TW201232784A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10175294A EP2426720A1 (en) 2010-09-03 2010-09-03 Staggered thin film transistor and method of forming the same

Publications (1)

Publication Number Publication Date
TW201232784A true TW201232784A (en) 2012-08-01

Family

ID=43104661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100129784A TW201232784A (en) 2010-09-03 2011-08-19 Staggered thin film transistor and method of forming the same

Country Status (7)

Country Link
US (1) US20120056173A1 (enExample)
EP (1) EP2426720A1 (enExample)
JP (1) JP2013541192A (enExample)
KR (1) KR20130102576A (enExample)
CN (1) CN103140929B (enExample)
TW (1) TW201232784A (enExample)
WO (1) WO2012028432A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI594333B (zh) * 2013-12-31 2017-08-01 國立交通大學 降低氧化物薄膜電晶體之接觸電阻的方法

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8962386B2 (en) * 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6051960B2 (ja) 2012-03-19 2016-12-27 株式会社リコー 導電性薄膜、導電性薄膜形成用塗布液、電界効果型トランジスタ、及び電界効果型トランジスタの製造方法
US8993383B2 (en) * 2012-06-08 2015-03-31 Panasonic Corporation Thin-film transistor and method for manufacturing thin-film transistor
JP5972065B2 (ja) * 2012-06-20 2016-08-17 富士フイルム株式会社 薄膜トランジスタの製造方法
US9379247B2 (en) * 2012-06-28 2016-06-28 Cbrite Inc. High mobility stabile metal oxide TFT
US8823003B2 (en) * 2012-08-10 2014-09-02 Apple Inc. Gate insulator loss free etch-stop oxide thin film transistor
WO2014067463A1 (zh) * 2012-11-02 2014-05-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置和阻挡层
US9601557B2 (en) 2012-11-16 2017-03-21 Apple Inc. Flexible display
KR102163730B1 (ko) * 2014-03-25 2020-10-08 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
US9600112B2 (en) 2014-10-10 2017-03-21 Apple Inc. Signal trace patterns for flexible substrates
KR102260886B1 (ko) * 2014-12-10 2021-06-07 삼성디스플레이 주식회사 박막 트랜지스터
KR102708773B1 (ko) 2016-12-26 2024-09-23 엘지디스플레이 주식회사 플렉서블 표시장치
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
CN110678973B (zh) 2017-06-02 2023-09-19 应用材料公司 碳化硼硬掩模的干式剥除
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11177128B2 (en) 2017-09-12 2021-11-16 Applied Materials, Inc. Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
US10854483B2 (en) 2017-11-16 2020-12-01 Applied Materials, Inc. High pressure steam anneal processing apparatus
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
CN111699549B (zh) 2018-01-24 2025-03-28 应用材料公司 使用高压退火的接缝弥合
JP7239598B2 (ja) 2018-03-09 2023-03-14 アプライド マテリアルズ インコーポレイテッド 金属含有材料の高圧アニーリングプロセス
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
JP7179172B6 (ja) 2018-10-30 2022-12-16 アプライド マテリアルズ インコーポレイテッド 半導体用途の構造体をエッチングするための方法
KR20210077779A (ko) 2018-11-16 2021-06-25 어플라이드 머티어리얼스, 인코포레이티드 강화된 확산 프로세스를 사용한 막 증착
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333925A (ja) * 1993-05-20 1994-12-02 Nippon Steel Corp 半導体集積回路及びその製造方法
JP4954366B2 (ja) * 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4496518B2 (ja) * 2002-08-19 2010-07-07 日立金属株式会社 薄膜配線
JP3940385B2 (ja) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
KR100905662B1 (ko) * 2003-06-26 2009-06-30 엘지디스플레이 주식회사 액정표시장치 제조 방법 및 배선 구조
KR20070049278A (ko) * 2005-11-08 2007-05-11 삼성전자주식회사 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
KR20080037296A (ko) * 2006-10-25 2008-04-30 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조방법
US7919795B2 (en) * 2006-12-21 2011-04-05 Samsung Electronics Co., Ltd. Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate
CN101529566B (zh) * 2006-12-28 2011-11-16 株式会社爱发科 布线膜的形成方法、晶体管及电子装置
KR100858088B1 (ko) * 2007-02-28 2008-09-10 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
JP4871777B2 (ja) * 2007-04-16 2012-02-08 株式会社アルバック エッチング液及びトランジスタ製造方法
JP5121299B2 (ja) * 2007-05-09 2013-01-16 アルティアム サービシズ リミテッド エルエルシー 液晶表示装置
KR101102891B1 (ko) * 2007-09-04 2012-01-10 삼성전자주식회사 배선구조 및 이를 이용한 박막 트랜지스터
TWI360708B (en) * 2007-12-17 2012-03-21 Au Optronics Corp Pixel structure, display panel, elecro-optical app
KR101296654B1 (ko) * 2007-12-26 2013-08-14 엘지디스플레이 주식회사 구리 배선, 이를 이용한 평판 표시 장치, 및 그 구리배선의 형성 방법
WO2010013636A1 (ja) * 2008-07-29 2010-02-04 株式会社アルバック 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法
JP5571887B2 (ja) * 2008-08-19 2014-08-13 アルティアム サービシズ リミテッド エルエルシー 液晶表示装置及びその製造方法
KR101499239B1 (ko) * 2008-08-26 2015-03-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5269533B2 (ja) * 2008-09-26 2013-08-21 三菱マテリアル株式会社 薄膜トランジスター
JP5360959B2 (ja) * 2008-10-24 2013-12-04 三菱マテリアル株式会社 バリア膜とドレイン電極膜およびソース電極膜が高い密着強度を有する薄膜トランジスター
US8237163B2 (en) * 2008-12-18 2012-08-07 Lg Display Co., Ltd. Array substrate for display device and method for fabricating the same
CN103456794B (zh) * 2008-12-19 2016-08-10 株式会社半导体能源研究所 晶体管的制造方法
JP4752927B2 (ja) * 2009-02-09 2011-08-17 ソニー株式会社 薄膜トランジスタおよび表示装置
WO2010098101A1 (ja) * 2009-02-27 2010-09-02 株式会社アルバック トランジスタ、トランジスタの製造方法及びその製造装置
WO2010125986A1 (en) * 2009-05-01 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101687311B1 (ko) * 2009-10-07 2016-12-16 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI594333B (zh) * 2013-12-31 2017-08-01 國立交通大學 降低氧化物薄膜電晶體之接觸電阻的方法

Also Published As

Publication number Publication date
WO2012028432A1 (en) 2012-03-08
KR20130102576A (ko) 2013-09-17
CN103140929A (zh) 2013-06-05
CN103140929B (zh) 2015-12-02
JP2013541192A (ja) 2013-11-07
EP2426720A1 (en) 2012-03-07
US20120056173A1 (en) 2012-03-08

Similar Documents

Publication Publication Date Title
TW201232784A (en) Staggered thin film transistor and method of forming the same
TWI282031B (en) Copper alloy and a liquid crystal display device
US9768322B2 (en) Metal oxide TFT with improved source/drain contacts and reliability
TWI437697B (zh) Wiring structure and a display device having a wiring structure
JP5403527B2 (ja) 半導体装置
US7940361B2 (en) Copper alloy and liquid-crystal display device
CN102804352B (zh) 布线层结构及其制造方法
JP2013541192A5 (enExample)
TW201123460A (en) Thin film transistor, method of manufacturing the same, and organic electroluminescent device including thin film transistor
TW201133862A (en) Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same
US20120146223A1 (en) Mos device with memory function and manufacturing method thereof
JP2020174174A (ja) 薄膜トランジスタ、薄膜トランジスタを有する表示装置、及び薄膜トランジスタの製造方法
TW201041140A (en) Transistor, transistor manufacturing method, and manufacturing device thereof
TW201212230A (en) Semiconductor structure and fabricating method thereof
CN103003939A (zh) 改善窄铜填充过孔的导电性的方法及结构
KR20000071417A (ko) 이리듐 도전성 전극/배리어 구조 및 그의 제조 방법
TW201041139A (en) Transistor, method for manufacturing transistor, and apparatus for manufacturing transistor
CN102696111A (zh) 具有铜电极的薄膜晶体管（tft）
KR20160060848A (ko) 박막 트랜지스터 및 그 제조 방법
WO2019214440A1 (zh) 薄膜晶体管及其制备方法、显示基板和显示装置
TW201214623A (en) Wiring structure, display device, and semiconductor device
CN101090123A (zh) 具铜导线结构的薄膜晶体管及其制造方法
CN102237491B (zh) 包含硅掺杂的氧化锰基电阻型存储器及其制备方法
TW201005947A (en) Electronic device, thin film transistor, display device, and conductor contacting process
CN102496597A (zh) 一种集成电路中Cu互连线扩散障碍层的构筑方法