JP5774005B2 - 銅電極を有する薄膜トランジスタ(tft) - Google Patents
銅電極を有する薄膜トランジスタ(tft) Download PDFInfo
- Publication number
- JP5774005B2 JP5774005B2 JP2012525923A JP2012525923A JP5774005B2 JP 5774005 B2 JP5774005 B2 JP 5774005B2 JP 2012525923 A JP2012525923 A JP 2012525923A JP 2012525923 A JP2012525923 A JP 2012525923A JP 5774005 B2 JP5774005 B2 JP 5774005B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- alloy
- tft structure
- semiconductor material
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010949 copper Substances 0.000 title claims description 35
- 229910052802 copper Inorganic materials 0.000 title claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims description 25
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- 238000005275 alloying Methods 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000005751 Copper oxide Substances 0.000 claims description 2
- 229910052729 chemical element Inorganic materials 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Description
・ インジウム(In)ベースの酸化物半導体
・ 亜鉛ベースの酸化物半導体
・ さらなる酸化物添加剤を有するInとZnとの酸化物に基づく酸化物半導体
・ InとGaとZnとの酸化物に基づく半導体
・ CuとCrとの酸化物またはCuとAlとの酸化物に基づく半導体、
並びに、電極材料としては、少なくとも1つの合金元素を濃度0.1〜10原子%で有するCu合金が考慮の対象となり、該合金元素は、酸化物半導体の表面の酸素原子よりも酸素に対する親和性が高いので、該合金元素は表面で反応し、且つ、良好に付着した電気伝導層を形成する。特に、
・ Cu:Mo
・ Cu:W
・ Cu:Mn
・ Cu:Mg
・ Cu:Ga
・ Cu:Li。
ガラス基板上に、まず、Cu:Mn 1原子%からの電極をスパッタによって堆積し、そして構造形成した。引き続き、その上にSi3N4からのゲート酸化膜を、CVDによって施与する。次に、半導体として、InとGaとZnとの酸化物からの層を堆積させ、その際、該金属は原子比で50:37:13原子%が選択された。再度、Cu:Mn 1原子%からのソース/ドレイン電極を介してコンタクト形成を行った。そのように製造された積層物を、CVDによってSi3N4層でパッシベーション処理した。CVD段階の際、300〜450℃の範囲の温度を使用した。
Claims (5)
- 半導体材料と電極とを有するTFT構造であって、該半導体材料が酸化物半導体材料であり、少なくとも1つの電極が、少なくとも1つの合金元素を0.1〜10原子%の濃度で含むCu合金に基づく電極材料から形成されており、前記少なくとも1つの合金元素が、TFT構造の電極と酸化物半導体材料との間の界面で酸化物中間層を形成し、且つ、TFT構造が少なくとも、前記Cu合金から形成されているソース電極およびドレイン電極を含み、
前記Cu合金の少なくとも1つの合金元素が、銅よりも高い酸素親和性を有し、
前記Cu合金が、Mg、Mn、Ga、Li、MoおよびWから選択される少なくとも1つの元素を0.1〜10原子%の濃度で含有し、且つ、
前記TFT構造が、さらなる電極材料として、少なくとも99.9%の純度を有する純粋なCu層をさらに含み、その際、前記Cu合金が中間層として、前記純粋なCu層の上および/または下に施与されており、且つ、該中間層は前記純粋なCu層よりも薄いことを特徴とする、TFT構造。 - ゲートが下にある構造またはゲートが上にある構造として構成される、請求項1に記載のTFT構造。
- 酸化物半導体材料が、インジウム酸化物、亜鉛酸化物、銅酸化物の群からの少なくとも1つの酸化物に基づいて形成されているか、またはインジウム、亜鉛、銅の群からの少なくとも1つの金属に基づく混合酸化物に基づいて形成されていることを特徴とする、請求項1または2に記載のTFT構造。
- 前記酸化物半導体材料として、InとGaとZnとの酸化物またはCuとCrとの酸化物またはCuとAlとの酸化物を使用することを特徴とする、請求項3に記載のTFT構造。
- Cu合金の少なくとも1つの合金元素が、TFT構造の酸化物半導体材料の化学元素の少なくとも1つよりも高い酸素親和性を有することを特徴とする、請求項1から4までのいずれか1項に記載のTFT構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009038589.4 | 2009-08-26 | ||
DE102009038589.4A DE102009038589B4 (de) | 2009-08-26 | 2009-08-26 | TFT-Struktur mit Cu-Elektroden |
PCT/EP2010/005191 WO2011023369A1 (de) | 2009-08-26 | 2010-08-25 | Dünnschichttransistor (tft ) mit kupferelektroden |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013503459A JP2013503459A (ja) | 2013-01-31 |
JP5774005B2 true JP5774005B2 (ja) | 2015-09-02 |
Family
ID=43088070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012525923A Expired - Fee Related JP5774005B2 (ja) | 2009-08-26 | 2010-08-25 | 銅電極を有する薄膜トランジスタ(tft) |
Country Status (7)
Country | Link |
---|---|
US (1) | US8581248B2 (ja) |
JP (1) | JP5774005B2 (ja) |
KR (1) | KR101413337B1 (ja) |
CN (1) | CN102696111A (ja) |
DE (1) | DE102009038589B4 (ja) |
TW (1) | TWI424570B (ja) |
WO (1) | WO2011023369A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101934977B1 (ko) | 2011-08-02 | 2019-03-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
JP2013118367A (ja) * | 2011-11-02 | 2013-06-13 | Hitachi Cable Ltd | 薄膜トランジスタ及びその製造方法、並びに薄膜トランジスタを備えた表示装置、スパッタリングターゲット材 |
CN103219389B (zh) * | 2013-03-21 | 2016-03-16 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
US20150155313A1 (en) * | 2013-11-29 | 2015-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN104952932A (zh) * | 2015-05-29 | 2015-09-30 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管、阵列基板及其制作方法、显示装置 |
CN105047568B (zh) | 2015-09-07 | 2018-01-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示面板 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6998656B2 (en) * | 2003-02-07 | 2006-02-14 | Hewlett-Packard Development Company, L.P. | Transparent double-injection field-effect transistor |
JP4954366B2 (ja) * | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3754011B2 (ja) * | 2002-09-04 | 2006-03-08 | デプト株式会社 | 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法、電子部品の製造方法及び電子光学部品 |
EP2246894B2 (en) * | 2004-03-12 | 2018-10-10 | Japan Science and Technology Agency | Method for fabricating a thin film transistor having an amorphous oxide as a channel layer |
KR20060090523A (ko) * | 2005-02-07 | 2006-08-11 | 삼성전자주식회사 | 표시 장치용 배선 및 상기 배선을 포함하는 박막트랜지스터 표시판 |
JP4542008B2 (ja) * | 2005-06-07 | 2010-09-08 | 株式会社神戸製鋼所 | 表示デバイス |
TWI267195B (en) * | 2005-06-20 | 2006-11-21 | Au Optronics Corp | Switching device for a pixel electrode and methods for fabricating the same |
JP5006598B2 (ja) * | 2005-09-16 | 2012-08-22 | キヤノン株式会社 | 電界効果型トランジスタ |
KR101219047B1 (ko) * | 2005-12-13 | 2013-01-07 | 삼성디스플레이 주식회사 | 표시장치와 이의 제조방법 |
KR100651602B1 (ko) * | 2005-12-14 | 2006-11-30 | 동부일렉트로닉스 주식회사 | 반도체 장치의 금속 배선 형성 방법 |
US7906415B2 (en) * | 2006-07-28 | 2011-03-15 | Xerox Corporation | Device having zinc oxide semiconductor and indium/zinc electrode |
US7772021B2 (en) * | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
EP2096666A4 (en) * | 2006-12-28 | 2015-11-18 | Ulvac Inc | METHOD FOR PRODUCING A WIRING FOIL, TRANSISTOR AND ELECTRONIC DEVICE |
JP2009010089A (ja) * | 2007-06-27 | 2009-01-15 | Mitsubishi Materials Corp | 密着性に優れた配線下地膜およびこの配線下地膜を含む密着性に優れた二重構造配線膜 |
US20110006297A1 (en) | 2007-12-12 | 2011-01-13 | Idemitsu Kosan Co., Ltd. | Patterned crystalline semiconductor thin film, method for producing thin film transistor and field effect transistor |
KR101518091B1 (ko) * | 2007-12-13 | 2015-05-06 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체를 이용한 전계 효과형 트랜지스터 및 그 제조방법 |
TWI622175B (zh) * | 2008-07-31 | 2018-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
TWI642113B (zh) * | 2008-08-08 | 2018-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
KR101435501B1 (ko) * | 2008-10-03 | 2014-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
US8237163B2 (en) * | 2008-12-18 | 2012-08-07 | Lg Display Co., Ltd. | Array substrate for display device and method for fabricating the same |
WO2010137838A2 (ko) * | 2009-05-26 | 2010-12-02 | 연세대학교 산학협력단 | 액상 공정용 조성물 그리고 이를 이용한 전자 소자 및 그 제조 방법 |
JP2011049543A (ja) * | 2009-07-27 | 2011-03-10 | Kobe Steel Ltd | 配線構造およびその製造方法、並びに配線構造を備えた表示装置 |
KR101361303B1 (ko) * | 2009-07-27 | 2014-02-11 | 가부시키가이샤 고베 세이코쇼 | 배선 구조 및 배선 구조를 구비한 표시 장치 |
-
2009
- 2009-08-26 DE DE102009038589.4A patent/DE102009038589B4/de not_active Expired - Fee Related
-
2010
- 2010-07-30 TW TW099125525A patent/TWI424570B/zh not_active IP Right Cessation
- 2010-08-25 KR KR1020127003237A patent/KR101413337B1/ko not_active IP Right Cessation
- 2010-08-25 WO PCT/EP2010/005191 patent/WO2011023369A1/de active Application Filing
- 2010-08-25 CN CN2010800377582A patent/CN102696111A/zh active Pending
- 2010-08-25 JP JP2012525923A patent/JP5774005B2/ja not_active Expired - Fee Related
- 2010-08-25 US US13/390,388 patent/US8581248B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102696111A (zh) | 2012-09-26 |
US20120146018A1 (en) | 2012-06-14 |
KR101413337B1 (ko) | 2014-06-27 |
DE102009038589B4 (de) | 2014-11-20 |
KR20120046237A (ko) | 2012-05-09 |
TWI424570B (zh) | 2014-01-21 |
JP2013503459A (ja) | 2013-01-31 |
WO2011023369A1 (de) | 2011-03-03 |
DE102009038589A1 (de) | 2011-03-24 |
TW201117384A (en) | 2011-05-16 |
US8581248B2 (en) | 2013-11-12 |
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