TWI424570B - 具有銅電極之ｔｆｔ電晶體 - Google Patents
具有銅電極之ｔｆｔ電晶體 Download PDFInfo
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- TWI424570B TWI424570B TW099125525A TW99125525A TWI424570B TW I424570 B TWI424570 B TW I424570B TW 099125525 A TW099125525 A TW 099125525A TW 99125525 A TW99125525 A TW 99125525A TW I424570 B TWI424570 B TW I424570B
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- TW
- Taiwan
- Prior art keywords
- tft structure
- alloy
- oxide
- pure copper
- electrode
- Prior art date
Links
- 239000010949 copper Substances 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 12
- 238000005275 alloying Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910017767 Cu—Al Inorganic materials 0.000 claims description 2
- 229910017813 Cu—Cr Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
- 239000005751 Copper oxide Substances 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Description
本發明係關於一種基於與Cu基電極(主要針對源極/汲極)接觸之氧化半導體之薄膜電晶體，藉此該等電極由Cu合金組成，Cu基質中之合金添加劑具有高於銅之氧親和力及高於銅之自擴散係數，且該合金與該氧化電晶體之氧組合而形成充分黏附之導電中間層，該導電中間層亦在適用時作為障壁功能。
薄膜電晶體主要用於平面螢幕顯示器(LCD、OLED、電子紙張、…)中。尤其對於具有大表面之LCD-TV及OLED應用而言，需要快速電路及/或高電流。與當前最常用之Al電極及/或Al合金電極相比之下，銅(Cu)在此方面具有明顯優勢。
標準a-Si技術難以與Cu技術組合，因為在閘極氧化物之沈積期間及/或在用於層之堆疊之鈍化的最終CVD步驟中，Cu曝露於高達400℃之溫度，且(例如)源極/汲極接點藉此展示與Si之擴散反應。此外，銅展示不良之黏附性。是故，搜尋另外需要與Cu一起良好地蝕刻之障壁/黏附層。除了使用障壁層之選項以外，亦正試圖使用Cu合金，其中添加了諸如Mg、Mo、W或Mn之合金元素，該等合金元素在層生長或下游回火步驟期間在層邊界處沈澱，且因此本質地形成障壁及黏附層。然而，迄今為止，此等努力並未得到適用於生產之解決方案。一個主要問題在於：所沈澱之元素始終需要氧來展示良好之黏附及障壁功能，因為a:Si層自身僅在表面處具有純Si。試圖克服此問題係極為費力的，因為其需要(例如)對a:Si電晶體之表面進行初始原位氧化。此外，此程序與獲得絕緣邊界層之風險相關，該絕緣邊界層繼而會阻止與Cu電極之所要歐姆接觸。
與a-Si層相關聯之另一問題在於：電流放大率變化且過低。此主要為在OLED狀況下之問題。氧化半導體(諸如，In-Ga-Zn氧化物)為a-Si之引起關注之替代物，因為其非晶形地生長(->極均一之可蝕刻性)且展示驚人地良好之電子遷移率、甚至電流放大率。
因此，本發明之目標為尋求層之一組合，其含有與Cu基印刷導體組合的良好TFT電晶體。
所提議之解決方案在獨立項尤其顯而易見。其由層之堆疊組成，該堆疊使用氧化半導體，且電極使用具有合金元素之Cu合金，該合金元素具有比銅高之氧親和力，且較佳地，具有比銅高之自擴散係數。
以下為可想到之氧化半導體
- In基氧化半導體
- 鋅基氧化半導體
- 基於In-Zn氧化物以及其他氧化添加劑之氧化半導體
- 基於In-Ga-Zn氧化物之半導體
- 基於Cu-Cr氧化物或Cu-Al氧化物之半導體且，可想到之電極材料為具有濃度範圍為0.1 at%至10 at%之至少一合金元素的Cu合金，該至少一合金元素具有比氧化半導體之表面之氧原子高的對氧之親和力，以使得該合金元素在該表面處反應且因此形成充分黏附之導電層。具體言之
- Cu:Mo
- Cu:W
- Cu:Mn
- Cu:Mg
- Cu:Ga
- Cu:Li
在此上下文中，氧化TFT電晶體可設計為具有一底部閘極之電晶體，或亦可設計為一具有一頂部閘極之結構。
首先，藉由濺鍍而將一由1 at%之Cu:Mn製成之電極沈積並配置於玻璃基板上。隨後，藉由CVD而將一由SiNx
製成之閘極氧化物施加於此電極上方。接著，沈積由In-Ga-Zn氧化物製成之層以作為半導體，藉此在37:13%之原子比下選擇金屬。藉由源電極/汲電極而實現接觸，該等源電極/汲電極亦由1%之Cu:Mn製成。藉由CVD而將因此產生的層之堆疊以一SiNx
層鈍化。在CVD步驟中，使用在300℃至450℃之範圍內的溫度。
因此產生的層之堆疊具有至少10 cm2
/V*s之高電子遷移率。Cu電極通過針對黏附性之膠帶測試而不失效，與源極區及汲極區具有良好歐姆接觸，且在溫度處理之後具有<3.5微歐姆*公分之電阻。
Claims (10)
- 一種TFT結構，其包含半導體材料及至少一個電極，其中該半導體材料係一氧化半導體材料，該至少一個電極包含基於Cu合金之電極材料，其包含至少一個合金元素，其濃度範圍為0.1at%至10at%，該至少一個合金元素在該電極材料及該氧化半導體材料之間的邊界表面處形成氧化中間層，且其中該TFT結構包含至少一個基本上由該Cu合金所組成之源電極及汲電極。
- 如請求項1之TFT結構，其係以具有底部閘極或頂部閘極之結構的形式提供。
- 如請求項1之TFT結構，其特徵在於該氧化半導體材料包含選自氧化銦、氧化鋅及氧化銅之至少一氧化物，及基於至少一種選自銦、鋅及銅之金屬的混合氧化物。
- 如請求項3之TFT結構，其中該氧化半導體材料係選自In-Ga-Zn氧化物、Cu-Cr氧化物及Cu-Al氧化物。
- 如請求項1之TFT結構，其中該Cu合金之至少一合金元素具有比銅高之氧親和力。
- 如請求項1之TFT結構，其中該Cu合金之至少一合金元素具有比該氧化半導體材料之至少一種化學元素高之氧親和力。
- 如請求項1之TFT結構，其中該Cu合金含有濃度為0.1at%至10at%之以下元素中之至少一者：Mg、Mn、Ga、Li、Mo及W。
- 如請求項5之TFT結構，其進一步包含一純銅層，其具有 至少99.9%的純度以作為另一電極材料，其中該Cu合金係用於作為在該純銅層之上及/或下之中間層，且其中該中間層較該純銅層為薄。
- 如請求項6之TFT結構，其進一步包含一純銅層，其具有至少99.9%的純度以作為另一電極材料，其中該Cu合金係用於作為在該純銅層之上及/或下之中間層，且其中該中間層較該純銅層為薄。
- 如請求項7之TFT結構，其進一步包含一純銅層，其具有至少99.9%的純度以作為另一電極材料，其中該Cu合金係用於作為在該純銅層之上及/或下之中間層，且其中該中間層較該純銅層為薄。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009038589.4A DE102009038589B4 (de) | 2009-08-26 | 2009-08-26 | TFT-Struktur mit Cu-Elektroden |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201117384A TW201117384A (en) | 2011-05-16 |
| TWI424570B true TWI424570B (zh) | 2014-01-21 |
Family
ID=43088070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099125525A TWI424570B (zh) | 2009-08-26 | 2010-07-30 | 具有銅電極之ｔｆｔ電晶體 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8581248B2 (zh) |
| JP (1) | JP5774005B2 (zh) |
| KR (1) | KR101413337B1 (zh) |
| CN (1) | CN102696111A (zh) |
| DE (1) | DE102009038589B4 (zh) |
| TW (1) | TWI424570B (zh) |
| WO (1) | WO2011023369A1 (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101934977B1 (ko) | 2011-08-02 | 2019-03-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP2013118367A (ja) * | 2011-11-02 | 2013-06-13 | Hitachi Cable Ltd | 薄膜トランジスタ及びその製造方法、並びに薄膜トランジスタを備えた表示装置、スパッタリングターゲット材 |
| CN103219389B (zh) * | 2013-03-21 | 2016-03-16 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
| US20150155313A1 (en) * | 2013-11-29 | 2015-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN104952932A (zh) * | 2015-05-29 | 2015-09-30 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管、阵列基板及其制作方法、显示装置 |
| CN105047568B (zh) | 2015-09-07 | 2018-01-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示面板 |
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2009
- 2009-08-26 DE DE102009038589.4A patent/DE102009038589B4/de not_active Expired - Fee Related
-
2010
- 2010-07-30 TW TW099125525A patent/TWI424570B/zh not_active IP Right Cessation
- 2010-08-25 KR KR1020127003237A patent/KR101413337B1/ko not_active IP Right Cessation
- 2010-08-25 US US13/390,388 patent/US8581248B2/en not_active Expired - Fee Related
- 2010-08-25 CN CN2010800377582A patent/CN102696111A/zh active Pending
- 2010-08-25 WO PCT/EP2010/005191 patent/WO2011023369A1/de active Application Filing
- 2010-08-25 JP JP2012525923A patent/JP5774005B2/ja not_active Expired - Fee Related
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| US20080099766A1 (en) * | 2005-06-20 | 2008-05-01 | Au Optronics Corp. | Switching device for a pixel electrode |
| US20070134832A1 (en) * | 2005-12-13 | 2007-06-14 | Samsung Electronics Co., Ltd. | Display device and manufacturing method therefor |
| US20070134915A1 (en) * | 2005-12-14 | 2007-06-14 | Han-Choon Lee | Method of fabricating a metal line in a semiconductor device |
| US20080023698A1 (en) * | 2006-07-28 | 2008-01-31 | Xerox Corporation | Device having zinc oxide semiconductor and indium/zinc electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102009038589B4 (de) | 2014-11-20 |
| JP5774005B2 (ja) | 2015-09-02 |
| WO2011023369A1 (de) | 2011-03-03 |
| TW201117384A (en) | 2011-05-16 |
| US20120146018A1 (en) | 2012-06-14 |
| CN102696111A (zh) | 2012-09-26 |
| US8581248B2 (en) | 2013-11-12 |
| KR101413337B1 (ko) | 2014-06-27 |
| JP2013503459A (ja) | 2013-01-31 |
| DE102009038589A1 (de) | 2011-03-24 |
| KR20120046237A (ko) | 2012-05-09 |
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