WO2016161860A1 - 阵列基板及其制作方法和显示装置 - Google Patents

阵列基板及其制作方法和显示装置 Download PDF

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WO2016161860A1
WO2016161860A1 PCT/CN2016/075430 CN2016075430W WO2016161860A1 WO 2016161860 A1 WO2016161860 A1 WO 2016161860A1 CN 2016075430 W CN2016075430 W CN 2016075430W WO 2016161860 A1 WO2016161860 A1 WO 2016161860A1
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layer
copper
alloy
array substrate
source
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PCT/CN2016/075430
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English (en)
French (fr)
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姜春生
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京东方科技集团股份有限公司
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Priority to US15/321,812 priority Critical patent/US10510779B2/en
Publication of WO2016161860A1 publication Critical patent/WO2016161860A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an array substrate, a display device, and an array substrate fabrication method.
  • aluminum (Al) is the earliest used metal wire material in the manufacturing process of the display backplane, for example, as a source and a drain of a driving transistor (TFT).
  • TFT driving transistor
  • the aluminum wire is gradually unable to adapt to the new requirements.
  • the high resistivity and easy electromigration failure, and the formation of Hillock in the preparation process are the main disadvantages of the aluminum wire.
  • the resistivity is low, the resistivity of Cu is 1.7 ⁇ cm, which is lower than the resistivity of Al of 2.7 ⁇ cm (200 ° C), which reduces the IR Drop and improves the response rate;
  • Cu metal has good electrical properties
  • the introduction of Cu as a source, drain and wiring may create new mechanical and electrical problems.
  • the bonding strength of Cu metal and SiNx, SiOx (which can be used as a passivation layer material) is not high, and other metal materials are required for transition, but the difficulty of Cu metal etching is increased;
  • Cu is easily oxidized at low temperatures ( ⁇ 200 ° C) and does not form a dense oxide film to prevent further oxidation.
  • the oxidation of Cu metal causes a significant Mura defect in the display.
  • the present disclosure provides a technical solution in which a source and a drain have a high bonding strength when a copper metal is used as a source and a drain, and a source and a drain are prevented from being oxidized. .
  • an array substrate comprising:
  • An alloy layer formed on the source/drain metal layer comprising a copper alloy, the non-copper metal in the copper alloy being more susceptible to oxidation than copper;
  • An oxide layer is formed between the alloy layer and the passivation layer.
  • the oxide layer is formed by combining a non-copper metal in the alloy layer with an oxidizing atom in the passivation layer.
  • the method further includes:
  • the method further includes:
  • the etch stop layer formed over the active layer.
  • an anti-diffusion layer disposed between the etch stop layer and the source/drain metal layer is further included.
  • the material of the diffusion prevention layer is a molybdenum-niobium alloy.
  • the non-copper metal and the atomic percentage in the alloy are from 5 at% to 12 at%.
  • the copper alloy comprises a copper-magnesium alloy or a copper-aluminum alloy.
  • the oxide layer comprises a nitride.
  • the nitride comprises magnesium nitride.
  • the present disclosure also provides a display device comprising the array substrate of any of the above.
  • the present disclosure also provides a method for fabricating an array substrate, including:
  • Source/drain metal layer Forming a source/drain metal layer on the substrate, the source/drain metal layer comprising copper;
  • An oxide layer is formed, the oxide layer being between the alloy layer and the passivation layer.
  • forming the oxide layer further includes performing an annealing treatment to bond the non-copper metal in the alloy layer with an oxidizing atom in the passivation layer to form the alloy layer and the blunt The oxide layer between the layers.
  • the annealing treatment comprises annealing in an air environment at 280 ° C for one hour.
  • the method before forming the source/drain metal layer, the method further includes:
  • a data line is formed on the substrate, the data line including copper.
  • the method before forming the source/drain metal layer, the method further includes:
  • the etch stop layer is formed over the active layer.
  • the method before forming the source/drain metal layer, the method further includes:
  • An anti-diffusion layer is formed on the etch barrier layer.
  • the copper alloy comprises a copper-magnesium alloy or a copper-aluminum alloy.
  • the oxide layer comprises a nitride.
  • the nitride comprises magnesium nitride.
  • a source and a drain can be formed, the source and the drain include copper, and the source and the drain have a high bonding strength with the passivation layer, and the source and the drain can be avoided. Oxidation also avoids the diffusion of copper atoms in the source and drain.
  • FIG. 1 is a schematic structural view of an array substrate in the prior art
  • FIG. 2 shows a schematic structural view of an array substrate according to an embodiment of the present disclosure
  • FIG. 3 shows a schematic flow chart of a method of fabricating an array substrate in accordance with one embodiment of the present disclosure
  • 4 through 8 illustrate a specific schematic flow chart of a method of fabricating an array substrate in accordance with one embodiment of the present disclosure.
  • an array substrate according to an embodiment of the present disclosure includes:
  • An oxide layer 4 is formed between the alloy layer 2 and the passivation layer 3.
  • the oxidation in this embodiment is oxidation in a broad sense, that is, the material loses electrons (price point).
  • the array substrate is annealed such that the non-copper metal in the copper alloy close to the passivation layer 3 is combined with the oxidizing atoms in the passivation layer 3, in the passivation layer 3 and the alloy layer 2 A dense oxide layer 4 is formed between them.
  • the oxide in the present embodiment is an oxide in a broad sense, that is, a compound in which a metal atom is combined with a non-metal atom.
  • the non-copper metal in the copper alloy is Mg
  • the oxide layer material formed is magnesium oxide
  • the material of the passivation layer 3 is SiN x
  • the oxidation is formed.
  • the layer material is magnesium nitride.
  • the oxide layer 4 prevents oxidation of copper atoms in the source and drain, improving the stability of the driving transistor of the array substrate during use. And since the oxide layer 4 is formed by combining atoms in the alloy layer 2 with atoms in the passivation layer 3, the bonding strength between the alloy layer 2 and the passivation layer 3 is enhanced, and no transition of other metal materials is required, and there is no need to increase The difficulty of etching copper metal. In addition, formation The oxide layer 4 can also increase the sheet resistance of the driving transistor.
  • the copper metal has low resistivity, and the use of copper metal as the source and the drain can reduce the IR Drop and improve the response rate; the copper metal also has a higher melting point, thereby having a higher Resistance to point migration.
  • the oxide layer 4 is formed by combining a non-copper metal in the alloy layer 2 with an oxidizing atom in the passivation layer 3.
  • an anti-diffusion layer (not shown) disposed between the etch barrier layer 5 and the source/drain metal layer 1 is further included.
  • the material of the diffusion barrier layer is a molybdenum-niobium alloy.
  • the anti-diffusion layer can effectively prevent copper atoms from diffusing into other layers of the driving transistor, thereby ensuring the stability of the driving transistor operation.
  • the method further includes:
  • a data line 11 formed of copper on the substrate 7 is used.
  • Copper metal can be made with a narrower line width, which consumes less energy and reduces losses; and copper metal can achieve higher wiring density, which is advantageous for high resolution.
  • the method further includes:
  • An etch barrier layer 5 is formed over the active layer 10.
  • the non-copper metal and the atomic percentage in the alloy are from 5 at% to 12 at%.
  • the copper alloy comprises a copper-magnesium alloy or a copper-aluminum alloy.
  • the present disclosure also proposes a display device comprising the above array substrate.
  • the display device in this embodiment may be: electronic paper, mobile phone, tablet computer, television, notebook computer, digital photo frame, navigator, etc. Product or component.
  • a method for fabricating an array substrate according to an embodiment of the present disclosure includes:
  • a copper alloy is used to form the alloy layer 2 on the source/drain metal layer 1, and the non-copper metal in the copper alloy is more easily oxidized than copper.
  • the alloy layer 2 may be etched after the alloy layer 2 is formed. Forming source and drain patterns on the source/drain metal layer 1, as shown in FIG. 6;
  • the annealing treatment comprises annealing in an air environment at 280 ° C for one hour.
  • Annealing in an air environment eliminates the need for a complicated operating environment and helps reduce costs.
  • Oxidation treatment in an environment of 280 ° C for one hour can cause the scrap copper metal atoms in the alloy layer 2 to slowly move toward the passivation layer 3 to combine with the non-metal atoms in the passivation layer 3 to form a dense oxide.
  • Layer 4 ensures that the source and drain are not oxidized.
  • the method before forming the source/drain metal layer, the method further includes:
  • An anti-diffusion layer (not shown) is formed on the etching stopper layer 5.
  • the method before forming the source/drain metal layer, the method further includes:
  • a data line 11 is formed on the substrate 7 using copper.
  • the method before forming the source/drain metal layer 1, the method further includes:
  • An etch stop layer 5 is formed over the active layer 10.
  • the source and the drain of the driving transistor are made of aluminum metal, and the wiring is unable to meet the gradually increasing resolution requirement, and the copper metal is used again. It will cause many new problems.
  • the source and the drain can be formed by using copper, and the source and the drain have a high bonding strength with the passivation layer, and the source and the drain can be prevented from being oxidized, and the source and the source can be avoided.
  • the copper atoms in the drain diffuse.

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Abstract

提供一种阵列基板及其制作方法，以及一种显示装置。阵列基板包括：形成于基板上的源漏金属层（1），源漏金属层（1）包括铜；形成于源漏金属层（1）上的合金层（2），合金层（2）包括铜合金，铜合金中的非铜金属比铜更易被氧化；形成于合金层（2）上的钝化层（3）；形成于合金层（2）与钝化层（3）之间氧化物层（4）。

Description

阵列基板及其制作方法和显示装置
相关申请的交叉引用
本申请要求于2015年04月09日递交的中国专利申请第201510166992.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开文本涉及显示技术领域，具体而言，涉及一种阵列基板、一种显示装置和一种阵列基板制作方法。
背景技术
如图1所示，在显示器背板的制造工艺中，铝(Al)是最早使用的金属导线材料，例如作为驱动晶体管(TFT)的源极和漏极。随着显示背板分辨率的不断跳高，铝线逐渐不能适应新的要求。其中电阻率偏高和易产生电迁移失效、在制备过程中形成Hillock等问题是铝线的主要不足。
而采用铜(Cu)导线则有以下优点：
1.电阻率低，Cu的电阻率是1.7μΩ·cm，比Al的电阻率2.7μΩ·cm(200℃)低，降低了IR Drop，提高了响应速率；
2.降低损耗，窄的线宽消耗更少的能量；
3.高的布线密度，有利于高分辨率的实现；
4.高的抗点迁移能力，Cu的熔点比Al高，因此有更好的抗电迁移能力。
虽然Cu金属有良好的电学性能，但是引入Cu作为源、漏极和布线可能会产生新的力学和电学问题。
1.Cu有很强的扩散能力，容易导致TFT器件的失效；
2.Cu金属和SiNx、SiOx(可以作为钝化层材料)的结合强度不高，需要其他金属材料进行过渡，但是增加了Cu金属刻蚀的难度；
3.Cu在低温下(<200℃)易氧化，而且不会形成致密的氧化物薄膜以防止进一步氧化，由于Cu金属的氧化会使得显示器出现很明显的Mura缺陷。
因此需要考虑如何在使用铜金属作为导线的情况下，避免铜金属的上述缺陷。
发明内容
本公开文本提供了这样的技术方案：将铜金属作为源极和漏极时，使得源极和漏极与钝化层具有较高的结合强度，并且可以避免源极和漏极被氧化的方案。
在本公开的一个方面，本公开文本提出了一种阵列基板，包括：
形成于基板上的源漏金属层，所述源漏金属层包括铜；
形成于所述源漏金属层上的合金层，所述合金层包括铜合金，所述铜合金中的非铜金属比铜更易被氧化；
形成于所述合金层上的钝化层；
形成于所述合金层与所述钝化层之间氧化物层。
在一个实施例中，所述氧化物层由所述合金层中的非铜金属与所述钝化层中的氧化性原子结合形成。
在一个实施例中，还包括：
形成于基板上的数据线，所述数据线包括铜。
在一个实施例中，还包括：
形成于基板之上的栅极；
形成于所述栅极之上的栅绝缘层；
形成于所述栅绝缘层之上的有源层；
形成于所述有源层之上的所述蚀刻阻挡层。
在一个实施例中，还包括设置于所述蚀刻阻挡层和所述源漏金属层之间的防扩散层。
在一个实施例中，所述防扩散层的材料为钼铌合金。
在一个实施例中，所述非铜金属与在所述合金中的原子百分比为5at％至12at％。
在一个实施例中，所述铜合金包括铜镁合金或铜铝合金。
在一个实施例中，所述氧化物层包括氮化物。
在一个实施例中，所述氮化物包括氮化镁。
在另一方面，本公开文本还提出了一种显示装置，包括上述任一项所述的阵列基板。
在又一方面，本公开文本还提出了一种阵列基板制作方法，包括：
在基板上形成源漏金属层，所述源漏金属层包括铜；
在所述源漏金属层上采用铜合金形成合金层，所述合金层包括铜合金，所述铜合金中的非铜金属比铜更易被氧化；
在所述合金层上形成钝化层；
形成氧化物层，所述氧化物层在所述合金层与所述钝化层之间。
在一个实施例中，形成氧化物层进一步包括进行退火处理，使所述合金层中的非铜金属与所述钝化层中的氧化性原子结合，以形成位于所述合金层与所述钝化层之间的所述氧化物层。
在一个实施例中，所述退火处理包括：在280℃的空气环境中退火处理一小时。
在一个实施例中，在形成所述源漏金属层之前，还包括：
在基板上形成数据线，所述数据线包括铜。
在一个实施例中，在形成所述源漏金属层之前，还包括：
在基板之上形成栅极；
在所述栅极之上形成栅绝缘层；
在所述栅绝缘层之上形成有源层；
在所述有源层之上形成所述刻蚀阻挡层。
在一个实施例中，在形成所述源漏金属层之前还包括：
在所述蚀刻阻挡层上形防扩散层。
在一个实施例中，所述铜合金包括铜镁合金或铜铝合金。
在一个实施例中，所述氧化物层包括氮化物。
在一个实施例中，所述氮化物包括氮化镁。
通过上述技术方案，可以形成源极和漏极，所述源极和漏极包括铜，同时使得源极和漏极与钝化层具有较高的结合强度，并且可以避免源极和漏极被氧化，还可以避免源极和漏极中的铜原子扩散。
附图说明
通过参考附图会更加清楚的理解本公开文本的特征和优点，附图是示意性的而不应理解为对本公开文本进行任何限制。应当知道，以下描述的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1示出了现有技术中阵列基板的结构示意图；
图2示出了根据本公开文本的一个实施例的阵列基板的结构示意图；
图3示出了根据本公开文本的一个实施例的阵列基板制作方法示意流程图；
图4至图8示出了根据本公开文本的一个实施例的阵列基板制作方法的具体示意流程图。
附图标号说明：
1-源漏金属层；2-合金层；3-钝化层；4-氧化物层；5-阻挡层；7-基板；8-栅极；9-栅绝缘层；10-有源层；11-数据线。
具体实施方式
为了能够更清楚地理解本公开文本的上述目的、特征和优点，下面结合附图和具体实施方式对本公开文本进行进一步的详细描述。需要说明的是，在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。
公开专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的 组成部分。同样，“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应地改变。
在下面的描述中阐述了很多具体细节以便于充分理解本公开文本，但是，本公开文本还可以采用其他不同于在此描述的其他方式来实施，因此，本公开文本的保护范围并不受下面公开的具体实施例的限制。
如图2所示，根据本公开文本的一个实施例的阵列基板，包括：
采用铜形成于基板7上的源漏金属层1；
采用铜合金形成于源漏金属层1上的合金层2，铜合金中的非铜金属比铜更易被氧化；
形成于合金层2上的钝化层3；
形成于合金层2与钝化层3之间氧化物层4。
由于铜合金中的非铜金属，例如镁(Mg)或铝(Al)，相对于铜更易被氧化，需要说明的是，本实施例中的氧化是广义上的氧化，即物质失电子(价位升高)的过程，例如金属与氮原子或氯原子结合。
从而在形成钝化层3之后，对阵列基板进行退火，使得铜合金中靠近钝化层3中的非铜金属与钝化层3中的氧化性原子结合，在钝化层3和合金层2之间形成致密的氧化物层4。
需要说明的是，本实施例中的氧化物是广义上的氧化物，即金属原子与非金属原子结合形成的化合物。当钝化层3的材料为SiOx时，铜合金中的非铜金属为Mg，那么形成的氧化物层材料为氧化镁，而当钝化层3的材料为SiNx时，那么形成的氧化物层材料为氮化镁。
氧化物层4可以防止源极和漏极中的铜原子受到氧化，提高阵列基板在使用过程中驱动晶体管的稳定性。并且由于氧化物层4是合金层2中的原子与钝化层3中的原子结合形成的，加强了合金层2与钝化层3的结合强度，无需其他金属材料进行过渡，也就无需增加铜金属的蚀刻难度。另外，形成 的氧化物层4还可以使得驱动晶体管的薄膜电阻增大。
并且相对于现有技术中的铝金属，铜金属电阻率低，采用铜金属作为源极和漏极可以降低IR Drop，提高了响应速率；铜金属还具有更高的熔点，从而具有更高的抗点迁移能力。
在一个实施例中，氧化物层4由合金层2中的非铜金属与钝化层3中的氧化性原子结合形成。
在一个实施例中，还包括设置于蚀刻阻挡层5和源漏金属层1之间的防扩散层(图中未示出)。
在一个实施例中，防扩散层的材料为钼铌合金。
防扩散层可以有效防止铜原子扩散到驱动晶体管的其他层中，从而保证驱动晶体管运行的稳定性。
在一个实施例中，还包括：
采用铜形成于基板7上的数据线11。
铜金属可以制作为更窄的线宽，从而消耗更少的能量，降低损耗；并且铜金属可以实现更高的布线密度，有利于高分辨率的实现。
在一个实施例中，还包括：
形成于基板7之上的栅极8；
形成于栅极8之上的栅绝缘层9；
形成于栅绝缘层9之上的有源层10；
形成于有源层10之上的蚀刻阻挡层5。
在一个实施例中，非铜金属与在合金中的原子百分比为5at％至12at％。
将非金属原子的原子百分比设置在5at％至12at％之间，可以保证非金属原子形成致密的氧化物层4，进一步降低源极和漏极被氧化。
在一个实施例中，铜合金包括铜镁合金或铜铝合金。
本公开文本还提出了一种显示装置，包括上述的阵列基板。
需要说明的是，本实施例中的显示装置可以为：电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产 品或部件。
如图3所示，根据本公开文本的一个实施例的阵列基板的制作方法，包括：
S1：在基板7上采用铜形成源漏金属层1，如图4所示；
S2：在源漏金属层1上采用铜合金形成合金层2，铜合金中的非铜金属比铜更易被氧化，如图5所示，在形成合金层2之后还可以对合金层2进行蚀刻，在源漏金属层1上形成源极和漏极图案，如图6所示；
S3：在合金层2上形成钝化层3，如图7所示；
S4：进行退火处理，使合金层2中的非铜金属与钝化层3中的氧化性原子结合，以形成位于合金层2与钝化层3之间的氧化物层4，如图8所示。
在一个实施例中，退火处理包括：在280℃的空气环境中退火处理一小时。在空气环境中进行退火操作，无需复杂的操作环境，有利于降低成本。在280℃的环境下进行氧化处理一小时，可以使得合金层2中的废铜金属原子缓慢地向钝化层3移动，以与钝化层3中的非金属原子结合，形成致密的氧化物层4，保证源极和漏极不被氧化。
在一个实施例中，在形成源漏金属层之1前还包括：
在蚀刻阻挡层5上形防扩散层(图中未示出)。
在一个实施例中，在形成源漏金属层之1前，还包括：
采用铜在基板7上形成数据线11。
在一个实施例中，在形成源漏金属层1之前，还包括：
在基板7之上形成栅极8；
在栅极8之上形成栅绝缘层9；
在栅绝缘层9之上形成有源层10；
在有源层10之上形成刻蚀阻挡层5。
以上结合附图详细说明了本公开文本的技术方案，考虑到相关技术中，采用铝金属制作驱动晶体管的源极和漏极，以及作为布线无法满足逐渐提高的分辨率要求，而采用铜金属又会引发诸多新问题。通过本公开文 本的技术方案，可以采用铜形成源极和漏极，同时使得源极和漏极与钝化层具有较高的结合强度，并且可以避免源极和漏极被氧化，还可以避免源极和漏极中的铜原子扩散。
此外，需要说明，在本公开文本中，类似于“采用铜金属”的语句表述并非是限制性的，也可以根据需要包括其它任何合适的材料。
需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间惟一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。以上所述仅为本公开文本的优选实施例而已，并不用于限制本公开文本，对于本领域的技术人员来说，本公开文本可以有各种更改和变化。凡在本公开文本的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开文本的保护范围之内。

Claims (20)

  1. 一种阵列基板，包括：
    形成于基板上的源漏金属层，所述源漏金属层包括铜；
    形成于所述源漏金属层上的合金层，所述合金层包括铜合金，所述铜合金中的非铜金属比铜更易被氧化；
    形成于所述合金层上的钝化层；
    形成于所述合金层与所述钝化层之间氧化物层。
  2. 根据权利要求1所述的阵列基板，其中，所述氧化物层由所述合金层中的非铜金属与所述钝化层中的氧化性原子结合形成。
  3. 根据权利要求1或2所述的阵列基板，其中，还包括：
    形成于基板上的数据线，所述数据线包括铜。
  4. 根据权利要求1至3中任一项所述的阵列基板，还包括：
    形成于基板之上的栅极；
    形成于所述栅极之上的栅绝缘层；
    形成于所述栅绝缘层之上的有源层；
    形成于所述有源层之上的所述蚀刻阻挡层。
  5. 根据权利要求4所述的阵列基板，还包括设置于所述蚀刻阻挡层和所述源漏金属层之间的防扩散层。
  6. 根据权利要求5所述的阵列基板，其中，所述防扩散层的材料为钼铌合金。
  7. 根据权利要求1至6中任一项所述的阵列基板，其中，所述非铜金属与在所述合金中的原子百分比为5at％至12at％。
  8. 根据权利要求1至7中任一项所述的阵列基板，其中，所述铜合金包括铜镁合金或铜铝合金。
  9. 根据权利要求1至8中任一项所述的阵列基板，其中，所述氧化物层包括氮化物。
  10. 根据权利要求9所述的阵列基板，其中，所述氮化物包括氮化镁。
  11. 一种显示装置，其中，包括权利要求1至10中任一项所述的阵列 基板。
  12. 一种阵列基板制作方法，其中，包括：
    在基板上形成源漏金属层，所述源漏金属层包括铜；
    在所述源漏金属层上形成合金层，所述合金层包括铜合金，所述铜合金中的非铜金属比铜更易被氧化；
    在所述合金层上形成钝化层；
    形成氧化物层，所述氧化物层在所述合金层与所述钝化层之间。
  13. 根据权利要求12所述的阵列基板的制作方法，其中形成氧化物层进一步包括进行退火处理，使所述合金层中的非铜金属与所述钝化层中的氧化性原子结合，以形成位于所述合金层与所述钝化层之间的所述氧化物层。
  14. 根据权利要求12所述的阵列基板制作方法，其中，所述退火处理包括：在280℃的空气环境中退火处理一小时。
  15. 根据权利要求12至14中任一项所述的阵列基板制作方法，其中，在形成所述源漏金属层之前，还包括：
    在所述基板上形成数据线，所述数据线包括铜。
  16. 根据权利要求12至14中任一项所述的阵列基板制作方法，其中，在形成所述源漏金属层之前，还包括：
    在基板之上形成栅极；
    在所述栅极之上形成栅绝缘层；
    在所述栅绝缘层之上形成有源层；
    在所述有源层之上形成所述刻蚀阻挡层。
  17. 根据权利要求16所述的阵列基板制作方法，其中，在形成所述源漏金属层之前，还包括：
    在所述蚀刻阻挡层上形成防扩散层。
  18. 根据权利要求12至17中任一项所述的阵列基板制作方法，其中，所述铜合金包括铜镁合金或铜铝合金。
  19. 根据权利要求12至17中任一项所述的阵列基板制作方法，其中， 所述氧化物层包括氮化物。
  20. 根据权利要求19所述的阵列基板制作方法，其中，所述氮化物包括氮化镁。
PCT/CN2016/075430 2015-04-09 2016-03-03 阵列基板及其制作方法和显示装置 WO2016161860A1 (zh)

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