JP4496237B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP4496237B2 JP4496237B2 JP2007128154A JP2007128154A JP4496237B2 JP 4496237 B2 JP4496237 B2 JP 4496237B2 JP 2007128154 A JP2007128154 A JP 2007128154A JP 2007128154 A JP2007128154 A JP 2007128154A JP 4496237 B2 JP4496237 B2 JP 4496237B2
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 59
- 239000010408 film Substances 0.000 claims description 390
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 158
- 229910052751 metal Inorganic materials 0.000 claims description 116
- 239000002184 metal Substances 0.000 claims description 107
- 239000000654 additive Substances 0.000 claims description 85
- 230000000996 additive effect Effects 0.000 claims description 85
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 57
- 229910052802 copper Inorganic materials 0.000 claims description 57
- 239000010949 copper Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 43
- 239000011159 matrix material Substances 0.000 claims description 39
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 35
- 239000011777 magnesium Substances 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 30
- 229910052749 magnesium Inorganic materials 0.000 claims description 30
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 19
- 239000011787 zinc oxide Substances 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 229910003437 indium oxide Inorganic materials 0.000 claims description 17
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 229910052720 vanadium Inorganic materials 0.000 claims description 15
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052790 beryllium Inorganic materials 0.000 claims description 9
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 78
- 238000000034 method Methods 0.000 description 60
- 230000008569 process Effects 0.000 description 59
- 238000000206 photolithography Methods 0.000 description 55
- 229910021417 amorphous silicon Inorganic materials 0.000 description 48
- 238000006243 chemical reaction Methods 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 19
- 239000011572 manganese Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- 229910021332 silicide Inorganic materials 0.000 description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 17
- 150000004767 nitrides Chemical class 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 12
- 229910000861 Mg alloy Inorganic materials 0.000 description 12
- OWXLRKWPEIAGAT-UHFFFAOYSA-N [Mg].[Cu] Chemical compound [Mg].[Cu] OWXLRKWPEIAGAT-UHFFFAOYSA-N 0.000 description 12
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 12
- 229910052748 manganese Inorganic materials 0.000 description 12
- 229910000914 Mn alloy Inorganic materials 0.000 description 9
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000005121 nitriding Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- -1 magnesium nitride Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910021338 magnesium silicide Inorganic materials 0.000 description 3
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 3
- 229910017028 MnSi Inorganic materials 0.000 description 2
- FHTCLMVMBMJAEE-UHFFFAOYSA-N bis($l^{2}-silanylidene)manganese Chemical compound [Si]=[Mn]=[Si] FHTCLMVMBMJAEE-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
Claims (8)
- 一対の基板と、前記一対の基板に挟持された液晶と、前記一対の基板の一方に形成された複数の走査信号線と、前記走査信号線とマトリクス状に交差する複数の映像信号線と、前記走査信号線と前記映像信号線との交点に対応して形成された薄膜トランジスタと、前記薄膜トランジスタに接続された画素電極と、前記走査信号線を覆うゲート絶縁膜と、前記映像信号線と前記薄膜トランジスタとを覆う保護絶縁膜と、を有する液晶表示装置において、
前記走査信号線は、インジウム酸化物もしくは亜鉛酸化物を主成分とする透明導電膜の上に形成された銅合金膜と、前記透明導電膜と前記銅合金膜との界面に形成された前記銅合金の添加金属元素の金属酸化物膜と、を含む積層膜から構成され、
前記銅合金の添加金属元素の銅中における拡散係数は銅の自己拡散係数よりも大きく、前記銅合金の添加金属元素の酸化反応の平衡酸素ポテンシャルはインジウムもしくは亜鉛の酸化反応の平衡酸素ポテンシャルよりも低く、且つ、前記銅合金の添加金属元素の銅中における固溶限は0.1%よりも大きいことを特徴とする液晶表示装置。 - 請求項1に記載の液晶表示装置において、前記透明導電膜がインジウム酸化物を主成分とする場合は、前記銅合金の添加金属元素はアルミニウム、ベリリウム、クロム、ガリウム、マグネシウム、マンガン、チタン、バナジウム、亜鉛から選択される元素を1種類以上含有し、
前記透明導電膜が亜鉛酸化物を主成分とする場合は、前記銅合金の添加金属元素はアルミニウム、ベリリウム、クロム、ガリウム、マグネシウム、マンガン、チタン、バナジウムから選択される元素を1種類以上含有することを特徴とする液晶表示装置。 - 請求項1に記載の液晶表示装置において、
前記ゲート絶縁膜及び前記金属酸化物膜は熱処理により同時に形成されることを特徴とする液晶表示装置。 - 請求項1に記載の液晶表示装置において、前記金属酸化物膜は導電性を有することを特徴とする液晶表示装置。
- 請求項1に記載の液晶表示装置において、前記透明導電膜の上に形成された銅合金膜の添加金属元素の含有量は0.5原子%以上、2原子%以下であることを特徴とするインプレインスイッチング型液晶表示装置。
- 請求項1に記載の液晶表示装置において、前記金属酸化物膜の膜厚は0.5nmから3nmの範囲であることを特徴とする液晶表示装置。
- 請求項1に記載の液晶表示装置において、前記走査信号線の抵抗率は3.7μΩcmより小さいことを特徴とする液晶表示装置。
- 請求項1に記載の液晶表示装置において、更に、前記走査信号線と前記映像信号線とに囲まれた画素領域に形成された共通透明電極と、前記走査信号線と隣接かつ平行し前記共通透明電極に接続される共通信号線と、を有するインプレインスイッチング型であることを特徴とする液晶表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2007128154A JP4496237B2 (ja) | 2007-05-14 | 2007-05-14 | 液晶表示装置 |
US12/119,547 US7719626B2 (en) | 2007-05-14 | 2008-05-13 | Liquid crystal display units with data and/or address lines being formed of copper alloy and method of fabricating the same |
Applications Claiming Priority (1)
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JP2007128154A JP4496237B2 (ja) | 2007-05-14 | 2007-05-14 | 液晶表示装置 |
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JP2008281932A JP2008281932A (ja) | 2008-11-20 |
JP4496237B2 true JP4496237B2 (ja) | 2010-07-07 |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110028313A (ko) * | 2008-07-03 | 2011-03-17 | 가부시키가이샤 고베 세이코쇼 | 배선 구조, 박막 트랜지스터 기판 및 그 제조 방법 및 표시 장치 |
JP4727702B2 (ja) * | 2008-09-11 | 2011-07-20 | 株式会社 日立ディスプレイズ | 液晶表示装置、及びその製造方法 |
KR101182403B1 (ko) | 2008-12-22 | 2012-09-13 | 한국전자통신연구원 | 투명 트랜지스터 및 그의 제조 방법 |
JP5466859B2 (ja) * | 2009-02-19 | 2014-04-09 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP5308206B2 (ja) * | 2009-03-27 | 2013-10-09 | 株式会社ジャパンディスプレイ | 表示装置製造方法 |
US8558382B2 (en) * | 2009-07-27 | 2013-10-15 | Kobe Steel, Ltd. | Interconnection structure and display device including interconnection structure |
KR101175970B1 (ko) | 2009-08-28 | 2012-08-22 | 가부시키가이샤 알박 | 배선층, 반도체 장치, 액정 표시 장치 |
WO2011043163A1 (en) * | 2009-10-05 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101802406B1 (ko) * | 2009-11-27 | 2017-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
US20110227467A1 (en) * | 2010-03-18 | 2011-09-22 | Foot Traffic Media Group, LLC | Media island |
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