CN102867821B - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN102867821B CN102867821B CN201210331265.0A CN201210331265A CN102867821B CN 102867821 B CN102867821 B CN 102867821B CN 201210331265 A CN201210331265 A CN 201210331265A CN 102867821 B CN102867821 B CN 102867821B
- Authority
- CN
- China
- Prior art keywords
- wiring substrate
- conductive pad
- conductive pads
- wiring
- upper conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06575—Auxiliary carrier between devices, the carrier having no electrical connection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Tests Of Electronic Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007236594A JP5222509B2 (ja) | 2007-09-12 | 2007-09-12 | 半導体装置 |
| JP2007-236594 | 2007-09-12 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102109164A Division CN101388389A (zh) | 2007-09-12 | 2008-08-12 | 半导体器件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102867821A CN102867821A (zh) | 2013-01-09 |
| CN102867821B true CN102867821B (zh) | 2015-05-13 |
Family
ID=40430861
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102109164A Pending CN101388389A (zh) | 2007-09-12 | 2008-08-12 | 半导体器件 |
| CN201210331265.0A Active CN102867821B (zh) | 2007-09-12 | 2008-08-12 | 半导体器件 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102109164A Pending CN101388389A (zh) | 2007-09-12 | 2008-08-12 | 半导体器件 |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US8159058B2 (enExample) |
| JP (1) | JP5222509B2 (enExample) |
| KR (1) | KR101426568B1 (enExample) |
| CN (2) | CN101388389A (enExample) |
| TW (2) | TWI481007B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0525602A (ja) * | 1991-07-17 | 1993-02-02 | Nippon Steel Corp | メツキ密着性に優れたアルミニウムメツキオーステナイト系ステンレス鋼板の製造法 |
| JP4185499B2 (ja) * | 2005-02-18 | 2008-11-26 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
| JP5222509B2 (ja) * | 2007-09-12 | 2013-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5265183B2 (ja) * | 2007-12-14 | 2013-08-14 | 新光電気工業株式会社 | 半導体装置 |
| KR20100058359A (ko) * | 2008-11-24 | 2010-06-03 | 삼성전자주식회사 | 다층 반도체 패키지, 그것을 포함하는 반도체 모듈 및 전자신호 처리 시스템 및 다층 반도체 패키지의 제조 방법 |
| US8716868B2 (en) | 2009-05-20 | 2014-05-06 | Panasonic Corporation | Semiconductor module for stacking and stacked semiconductor module |
| US8451620B2 (en) | 2009-11-30 | 2013-05-28 | Micron Technology, Inc. | Package including an underfill material in a portion of an area between the package and a substrate or another package |
| JP5586267B2 (ja) * | 2010-02-24 | 2014-09-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8288849B2 (en) * | 2010-05-07 | 2012-10-16 | Texas Instruments Incorporated | Method for attaching wide bus memory and serial memory to a processor within a chip scale package footprint |
| KR101744756B1 (ko) * | 2010-06-08 | 2017-06-09 | 삼성전자 주식회사 | 반도체 패키지 |
| JP5587123B2 (ja) * | 2010-09-30 | 2014-09-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN102890970B (zh) * | 2011-07-21 | 2017-04-19 | 广东新岸线计算机系统芯片有限公司 | 一种pop封装的soc芯片dram输入/输出测试方法和装置 |
| KR101831692B1 (ko) * | 2011-08-17 | 2018-02-26 | 삼성전자주식회사 | 기능적으로 비대칭인 전도성 구성 요소들을 갖는 반도체 소자, 패키지 기판, 반도체 패키지, 패키지 적층 구조물 및 전자 시스템 |
| JP5996177B2 (ja) * | 2011-10-21 | 2016-09-21 | ルネサスエレクトロニクス株式会社 | デバッグシステム、電子制御装置、情報処理装置、半導体パッケージおよびトランシーバ回路 |
| JP2013125765A (ja) * | 2011-12-13 | 2013-06-24 | Elpida Memory Inc | 半導体装置 |
| KR20140059569A (ko) * | 2012-11-08 | 2014-05-16 | 삼성전자주식회사 | 지그재그형 패드 배선 구조를 포함하는 반도체 소자 |
| KR102032887B1 (ko) | 2012-12-10 | 2019-10-16 | 삼성전자 주식회사 | 반도체 패키지 및 반도체 패키지의 라우팅 방법 |
| US9875808B2 (en) | 2013-01-15 | 2018-01-23 | Micron Technology, Inc. | Reclaimable semiconductor device package and associated systems and methods |
| KR102110984B1 (ko) | 2013-03-04 | 2020-05-14 | 삼성전자주식회사 | 적층형 반도체 패키지 |
| US20140361800A1 (en) * | 2013-06-05 | 2014-12-11 | Qualcomm Incorporated | Method and apparatus for high volume system level testing of logic devices with pop memory |
| US9443758B2 (en) | 2013-12-11 | 2016-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Connecting techniques for stacked CMOS devices |
| JP2016062212A (ja) * | 2014-09-17 | 2016-04-25 | 株式会社東芝 | 半導体記憶装置 |
| KR102296746B1 (ko) | 2014-12-31 | 2021-09-01 | 삼성전자주식회사 | 적층형 반도체 패키지 |
| US10468363B2 (en) | 2015-08-10 | 2019-11-05 | X-Celeprint Limited | Chiplets with connection posts |
| JP2017045915A (ja) | 2015-08-28 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US11064609B2 (en) | 2016-08-04 | 2021-07-13 | X Display Company Technology Limited | Printable 3D electronic structure |
| CN107995773A (zh) * | 2017-11-24 | 2018-05-04 | 深圳创维数字技术有限公司 | 一种电路板及测试系统 |
| CN110473839B (zh) | 2018-05-11 | 2025-03-21 | 三星电子株式会社 | 半导体封装系统 |
| US10991638B2 (en) | 2018-05-14 | 2021-04-27 | Samsung Electronics Co., Ltd. | Semiconductor package system |
| KR102573573B1 (ko) | 2019-10-25 | 2023-09-01 | 삼성전자주식회사 | 반도체 패키지 |
| TWI711131B (zh) * | 2019-12-31 | 2020-11-21 | 力成科技股份有限公司 | 晶片封裝結構 |
| JP7324155B2 (ja) * | 2020-01-27 | 2023-08-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| TW202219517A (zh) * | 2020-11-03 | 2022-05-16 | 點序科技股份有限公司 | 測試裝置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1531085A (zh) * | 2003-03-12 | 2004-09-22 | ��ʽ���������Ƽ� | 半导体器件 |
| JP2005039020A (ja) * | 2003-07-18 | 2005-02-10 | Renesas Technology Corp | 半導体装置 |
| EP1734581A1 (en) * | 2005-06-13 | 2006-12-20 | Shinko Electric Industries Co., Ltd. | Laminated semiconductor package |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2907127B2 (ja) | 1996-06-25 | 1999-06-21 | 日本電気株式会社 | マルチチップモジュール |
| US6426642B1 (en) * | 1999-02-16 | 2002-07-30 | Micron Technology, Inc. | Insert for seating a microelectronic device having a protrusion and a plurality of raised-contacts |
| JP3429718B2 (ja) | 1999-10-28 | 2003-07-22 | 新光電気工業株式会社 | 表面実装用基板及び表面実装構造 |
| JP3670917B2 (ja) * | 1999-12-16 | 2005-07-13 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| US6522018B1 (en) * | 2000-05-16 | 2003-02-18 | Micron Technology, Inc. | Ball grid array chip packages having improved testing and stacking characteristics |
| CN100407422C (zh) * | 2001-06-07 | 2008-07-30 | 株式会社瑞萨科技 | 半导体装置及其制造方法 |
| JP2003068806A (ja) | 2001-08-29 | 2003-03-07 | Hitachi Ltd | 半導体装置及びその製造方法 |
| KR100500452B1 (ko) * | 2003-06-20 | 2005-07-12 | 삼성전자주식회사 | 모듈기판 상에 실장된 볼 그리드 어레이 패키지 검사장치및 검사방법 |
| JP2005136246A (ja) | 2003-10-31 | 2005-05-26 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| TWI278048B (en) | 2003-11-10 | 2007-04-01 | Casio Computer Co Ltd | Semiconductor device and its manufacturing method |
| JP4189327B2 (ja) * | 2004-01-09 | 2008-12-03 | 株式会社東芝 | 半導体装置 |
| US20050225955A1 (en) * | 2004-04-09 | 2005-10-13 | Hewlett-Packard Development Company, L.P. | Multi-layer printed circuit boards |
| WO2005107350A1 (ja) * | 2004-04-28 | 2005-11-10 | Ibiden Co., Ltd. | 多層プリント配線板 |
| JP2005317861A (ja) * | 2004-04-30 | 2005-11-10 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2005322861A (ja) * | 2004-05-11 | 2005-11-17 | Seiko Epson Corp | 回路基板及び該回路基板におけるノイズの低減方法 |
| JP4583850B2 (ja) * | 2004-09-16 | 2010-11-17 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| JP4512545B2 (ja) | 2005-10-27 | 2010-07-28 | パナソニック株式会社 | 積層型半導体モジュール |
| JP2007123454A (ja) | 2005-10-27 | 2007-05-17 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| JP4473807B2 (ja) * | 2005-10-27 | 2010-06-02 | パナソニック株式会社 | 積層半導体装置及び積層半導体装置の下層モジュール |
| JP4995455B2 (ja) | 2005-11-30 | 2012-08-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US7656031B2 (en) * | 2007-02-05 | 2010-02-02 | Bridge Semiconductor Corporation | Stackable semiconductor package having metal pin within through hole of package |
| JP2008251608A (ja) * | 2007-03-29 | 2008-10-16 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
| JP5222509B2 (ja) * | 2007-09-12 | 2013-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2007
- 2007-09-12 JP JP2007236594A patent/JP5222509B2/ja active Active
-
2008
- 2008-06-25 TW TW097123751A patent/TWI481007B/zh active
- 2008-06-25 TW TW104106919A patent/TWI529908B/zh active
- 2008-08-12 CN CNA2008102109164A patent/CN101388389A/zh active Pending
- 2008-08-12 CN CN201210331265.0A patent/CN102867821B/zh active Active
- 2008-08-25 KR KR1020080082975A patent/KR101426568B1/ko active Active
- 2008-09-04 US US12/203,972 patent/US8159058B2/en active Active
-
2012
- 2012-03-01 US US13/409,865 patent/US8698299B2/en active Active
-
2013
- 2013-11-15 US US14/081,588 patent/US8766425B2/en active Active
-
2014
- 2014-05-20 US US14/281,956 patent/US9330942B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1531085A (zh) * | 2003-03-12 | 2004-09-22 | ��ʽ���������Ƽ� | 半导体器件 |
| JP2005039020A (ja) * | 2003-07-18 | 2005-02-10 | Renesas Technology Corp | 半導体装置 |
| EP1734581A1 (en) * | 2005-06-13 | 2006-12-20 | Shinko Electric Industries Co., Ltd. | Laminated semiconductor package |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090065773A1 (en) | 2009-03-12 |
| TW200919700A (en) | 2009-05-01 |
| US20120153282A1 (en) | 2012-06-21 |
| US9330942B2 (en) | 2016-05-03 |
| US8766425B2 (en) | 2014-07-01 |
| US8159058B2 (en) | 2012-04-17 |
| JP5222509B2 (ja) | 2013-06-26 |
| TW201523836A (zh) | 2015-06-16 |
| KR20090027573A (ko) | 2009-03-17 |
| TWI529908B (zh) | 2016-04-11 |
| KR101426568B1 (ko) | 2014-08-05 |
| US8698299B2 (en) | 2014-04-15 |
| US20140252357A1 (en) | 2014-09-11 |
| US20140070214A1 (en) | 2014-03-13 |
| CN102867821A (zh) | 2013-01-09 |
| TWI481007B (zh) | 2015-04-11 |
| JP2009070965A (ja) | 2009-04-02 |
| CN101388389A (zh) | 2009-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102867821B (zh) | 半导体器件 | |
| US7763964B2 (en) | Semiconductor device and semiconductor module using the same | |
| KR101070913B1 (ko) | 반도체 칩 적층 패키지 | |
| KR100621991B1 (ko) | 칩 스케일 적층 패키지 | |
| US7327020B2 (en) | Multi-chip package including at least one semiconductor device enclosed therein | |
| KR101479461B1 (ko) | 적층 패키지 및 이의 제조 방법 | |
| US20080211078A1 (en) | Semiconductor packages and method of manufacturing the same | |
| TWI529918B (zh) | 半導體記憶卡 | |
| US7902664B2 (en) | Semiconductor package having passive component and semiconductor memory module including the same | |
| US8796834B2 (en) | Stack type semiconductor package | |
| US20140097530A1 (en) | Integrated circuit package | |
| US20070052082A1 (en) | Multi-chip package structure | |
| US7652361B1 (en) | Land patterns for a semiconductor stacking structure and method therefor | |
| KR100791576B1 (ko) | 볼 그리드 어레이 유형의 적층 패키지 | |
| KR20110050028A (ko) | 인쇄회로기판 및 이를 포함하는 반도체 패키지 | |
| KR20080077837A (ko) | 탭용 테이프를 구비하는 패키지 온 패키지 형태의 반도체패키지 | |
| US20100149770A1 (en) | Semiconductor stack package | |
| TWI891022B (zh) | 線路載板、電子封裝體及電子結構之製作方法 | |
| KR20090121011A (ko) | 필름 기판을 이용한 적층 반도체 패키지 및 그 제조방법 | |
| KR101019705B1 (ko) | 반도체 패키지 제조용 기판 및 이를 이용한 반도체 패키지 | |
| KR20070088046A (ko) | 멀티 칩 패키지 | |
| KR20070088058A (ko) | 멀티 칩 패키지 | |
| KR20030055835A (ko) | 패키지 적층 구조 | |
| KR20070027798A (ko) | 테스트 단자를 갖는 시스템 인 패키지 및 그 제조방법 | |
| KR20110137241A (ko) | 스택 패키지 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
| CP02 | Change in the address of a patent holder |