CN102867821B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN102867821B
CN102867821B CN201210331265.0A CN201210331265A CN102867821B CN 102867821 B CN102867821 B CN 102867821B CN 201210331265 A CN201210331265 A CN 201210331265A CN 102867821 B CN102867821 B CN 102867821B
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China
Prior art keywords
wiring substrate
conductive pad
conductive pads
wiring
upper conductive
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CN201210331265.0A
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English (en)
Chinese (zh)
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CN102867821A (zh
Inventor
石川智和
冈田三香子
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication of CN102867821A publication Critical patent/CN102867821A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L2924/30Technical effects
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    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
CN201210331265.0A 2007-09-12 2008-08-12 半导体器件 Active CN102867821B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007236594A JP5222509B2 (ja) 2007-09-12 2007-09-12 半導体装置
JP2007-236594 2007-09-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA2008102109164A Division CN101388389A (zh) 2007-09-12 2008-08-12 半导体器件

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CN102867821A CN102867821A (zh) 2013-01-09
CN102867821B true CN102867821B (zh) 2015-05-13

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US9330942B2 (en) 2016-05-03
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US20140252357A1 (en) 2014-09-11
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