CN102683330A - 半导体装置以及半导体装置的制造方法 - Google Patents

半导体装置以及半导体装置的制造方法 Download PDF

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Publication number
CN102683330A
CN102683330A CN2012100438252A CN201210043825A CN102683330A CN 102683330 A CN102683330 A CN 102683330A CN 2012100438252 A CN2012100438252 A CN 2012100438252A CN 201210043825 A CN201210043825 A CN 201210043825A CN 102683330 A CN102683330 A CN 102683330A
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semiconductor chip
semiconductor device
resin
stack body
semiconductor
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CN102683330B (zh
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福田昌利
渡部博
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Japanese Businessman Panjaya Co ltd
Kioxia Corp
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Toshiba Corp
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Abstract

本发明提供半导体装置以及半导体装置的制造方法。半导体装置具备：布线基板，在该布线基板上搭载的半导体芯片叠层体，在半导体芯片叠层体的各半导体芯片之间的间隙填充的底部填充层，包括覆盖·形成于所述半导体芯片叠层体的外侧的模塑树脂的密封层。底部填充层包括包含胺系的固化剂的树脂材料的固化物，该固化物具有65℃以上且100℃以下的Tg。

Description

半导体装置以及半导体装置的制造方法
本申请享受2011年3月11日申请的日本专利申请2011-54534的优先权，在本申请中引用该日本专利申请的全部内容。
技术领域
本发明的实施方式涉及半导体装置以及半导体装置的制造方法。
背景技术
近年，伴随着电子设备的高机能化以及小型化的要求，半导体集成电路的高密度安装技术的开发取得进展。作为这样的安装技术的一例，有在半导体芯片上将其他半导体芯片以面向下的方式搭载的芯片上芯片(chipon chip)型的系统级封装的技术。这样的芯片上芯片构造着眼于有效地实现半导体封装的小型化，工作的高速化，省电化。
在芯片上芯片型的构造中，半导体芯片间的连接，通常以经由微小的凸起以倒装芯片方式进行。并且，为了保护连接部不受湿度等的周围环境的影响，且确保机械强度，在半导体芯片间注入树脂材料形成底部填充层。
但是，在现有技术的芯片上芯片型的半导体装置中，若重复低温-高温的温度周期，则上级的半导体芯片的侧面和构成底部填充层的底部填充树脂之间容易产生剥离。而且，可能发生该剥离在底部填充树脂内成为龟裂并传播，下级的半导体芯片的内部布线被切断等的缺陷。
发明内容
本发明要解决的课题是提供在温度周期等的施加时，能够抑制底部填充树脂的剥离，防止半导体芯片的断线缺陷等的半导体装置以及半导体装置的制造方法。
实施方式的半导体装置具备：布线基板，其在至少一个主面(主表面)具有布线层；半导体芯片叠层体，其在所述布线基板的所述主面安装，以预定的间隔重叠配置有2个以上的半导体芯片，且各半导体芯片相互地经由凸起被电连接；底部填充层，其包括在所述半导体芯片叠层体的各半导体芯片之间的间隙填充的树脂；和密封层，其包括覆盖并形成于所述半导体芯片叠层体的外侧的模塑树脂；
所述底部填充层包括包含胺系的固化剂的树脂材料的固化物，且所述固化物的玻璃化转变温度(Tg)为65℃以上且100℃以下。
另一实施方式的半导体装置的制造方法具备：准备在至少一个主面具有布线层的布线基板的步骤；将2个以上的半导体芯片在所述布线基板的主面以预定的间隔重叠配置，将各半导体芯片相互地经由凸起电连接而安装的步骤；在所述半导体芯片叠层体的各半导体芯片间的间隙注入填充热固化性树脂材料的步骤；通过使所述热固化性树脂材料热固化，在所述间隙形成包括底部填充树脂的底部填充层的步骤；和以覆盖所述半导体芯片叠层体的外侧的方式形成包括模塑树脂的密封层的步骤；
所述底部填充树脂包含胺系的固化剂，具有65℃以上且100℃以下的玻璃化转变温度(Tg)。
根据上述构成的半导体装置以及半导体装置的制造方法，在温度周期等的施加时，能够抑制底部填充树脂的剥离，防止半导体芯片的断线缺陷等。
附图说明
图1是表示第1实施方式的半导体装置的截面图。
图2是表示第2实施方式的半导体装置的截面图。
具体实施方式
根据一个实施方式，提供具备如下的半导体装置：布线基板，其在至少一个主面具有布线层；半导体芯片叠层体，其在所述布线基板的所述主面安装，以预定的间隔重叠配置有2个以上的半导体芯片，且各半导体芯片相互地经由凸起被电连接；底部填充层，其包括在所述半导体芯片叠层体的各半导体芯片之间的间隙填充的树脂；和密封层，其包括覆盖所述半导体芯片叠层体的外侧和/或形成于所述半导体芯片叠层体的外侧的模塑树脂。在这样的半导体装置中，所述底部填充层包括包含胺系的固化剂的树脂材料的固化物，且所述固化物的玻璃化转变温度(Tg)为65℃以上且100℃以下。
另外，根据一个实施方式，提供具备如下步骤的半导体装置的制造方法：准备在至少一个主面具有布线层的布线基板的步骤；将2个以上的半导体芯片在所述布线基板的主面以预定的间隔重叠配置，将各半导体芯片相互地经由凸起电连接而安装的步骤；在所述半导体芯片叠层体的各半导体芯片间的间隙注入填充热固化性树脂材料的步骤；通过使所述热固化性树脂材料热固化，在所述间隙形成包括底部填充树脂的底部填充层的步骤；和以覆盖所述半导体芯片叠层体的外侧的方式形成包括模塑树脂的密封层的步骤。在这样的半导体装置的制造方法中，所述底部填充树脂包含胺系的固化剂，具有65℃以上且100℃以下的玻璃化转变温度(Tg)。
(第1实施方式)
图1是表示第1实施方式的半导体装置的截面图。
图1所示的半导体装置10具备，在作为一个主面(主表面)的表面(图1中的上表面)具有布线电路(省略图示)的布线基板1，和在该布线基板1的所述表面搭载的、被电连接了的半导体芯片叠层体2。该半导体装置10具有FBGA(Fine pitch Ball Grid Array，细间距球栅阵列)封装的形态。
半导体芯片叠层体2具有如下构造：在面向上配置的第1半导体芯片2a上，与第1半导体芯片2a相比主平面的面积小的第2半导体芯片2b以各自的电路面(元件电路面)对置的方式被配置，经由凸起3被连接。第1以及第2半导体芯片2a、2b的厚度均为350μm以下。
凸起3包括Sn-Ag焊料(熔点221℃)和/或Sn-Cu焊料(熔点227℃)等的Sn系焊料、或者Au、Sn(熔点232℃)、Cu、Ni、Ag、Pd等的金属材料。凸起直径为5～50μm，排列的间距为10～100μm。第1以及第2半导体芯片2a、2b和凸起3的连接使用热压接和/或回流等。
在半导体芯片叠层体2中，第1半导体芯片2a和第2半导体芯片2b之间的间隙优选为5～50μm，更优选为20～30μm。在第1半导体芯片2a和第2半导体芯片2b之间的间隙填充热固化性的树脂材料并使其固化，形成包括底部填充树脂的底部填充层4。这里，构成底部填充层4的底部填充树脂包括含有胺系的固化剂的环氧系树脂的固化物。底部填充树脂的Tg为65℃以上且100℃以下。底部填充树脂的优选Tg为65℃以上且95℃以下，更优选的Tg为65℃以上且90℃以下。
作为固化剂，在使用胺系以外的例如配合酸酐系的化合物的树脂材料形成底部填充层4的情况下，在温度周期施加时，不能抑制在半导体芯片侧面的底部填充树脂的剥离。另外，在底部填充树脂的Tg超过100℃的情况下，同样地，也不能抑制在温度周期施加时的底部填充树脂的剥离。另外，从底部填充树脂的剥离抑制的观点来看，固化物的Tg越低效果越好。
底部填充树脂的Tg的测定可通过TMA(热机械分析)进行。TMA是使试料的温度通过一定的程序变化，同时施加压缩、拉伸、弯曲等的非振动的负荷，其物质的变形作为温度或者时间的函数而测定的方法。对应于温度变化引起试料的热膨胀和/或软化等的变形和伴随变形的变位量，作为探针的位置变化量由变位检测部测量。实施方式记载的Tg是由TMA法测定的。
另外，Tg的测定也可以通过DMA(动态粘弹性测定)进行。
另外，在底部填充树脂中，为了使热膨胀率与硅芯片的热膨胀率接近，含有二氧化硅粉末等的无机填充材料。在实施方式中，在底部填充树脂含有的无机填充材料的平均粒径优选为小于0.5μm，最大粒径为3.0μm以下。无机填充材料的平均粒径更优选为小于0.4μm，更加优选为小于0.3μm。另外，平均粒径是通过激光衍射散射法测定的。
在底部填充树脂含有的无机填充材料的平均粒径为0.5μm以上的情况下，无机填充材料妨碍用于形成底部填充树脂材料的树脂材料的流动。因此，实施方式的芯片上芯片型的半导体装置中，在半导体芯片2a、2b之间的狭小的间隙(5～50μm)难以填充底部填充树脂材料。因此，很难形成没有空洞和/或偏析，均一组成的底部填充层4。另外，用于形成底部填充树脂的固化前的材料称作底部填充树脂材料。
底部填充层不限于在芯片上芯片型的半导体装置，也可以在基板上搭载芯片的倒装芯片BGA(以下，示为FC-BGA)设置。并且，作为构成这样的FC-BGA的底部填充层的树脂，也使用含有胺系固化剂、固化物的Tg为100℃以下的环氧系树脂。但是，用于FC-BGA的树脂(以下，示为FC-BGA用树脂)与在实施方式使用的底部填充树脂相比，含有大粒径(平均粒径0.5μm以上，最大粒径3μm以上)的无机填充材料(例如，二氧化硅粉末)。因此，FC-BGA用树脂与在实施方式使用的底部填充树脂相比，固化前的流动性差。因此，用于形成现有技术的FC-BGA用树脂的材料可在基板和半导体芯片之间的比较宽的间隙(50～70μm)填充，但是，在实施方式的半导体装置10中的半导体芯片2a、2b之间的狭窄的间隙(5～50μm)难以填充，而发生未填充。另外，用于形成FC-BGA用树脂的固化前的材料示为FC-BGA用树脂材料。
研究在实施方式使用的底部填充树脂材料和现有技术的FC-BGA用树脂材料的流动性的结果如下所示。另外，实施方式的底部填充树脂材料含有50质量％的比例的平均粒径为0.3μm，最大粒径为3.0μm的二氧化硅粉末，是用于形成后述的底部填充树脂G的树脂材料。另外，作为FC-BGA用树脂材料，使用含有胺系固化剂，且含有50质量％的比例的平均粒径为0.6μm，最大粒径为3.0μm的二氧化硅粉末，固化物的Tg为100℃的环氧系树脂材料。
(流动性的比较实验)
将2枚玻璃板以20μm的间隙固定，在该间隙分别浸透实施方式的底部填充树脂材料和现有技术的FC-BGA用树脂材料。并且，测定浸透预定的距离(20mm)所需要的时间。另外，将玻璃板加热到110℃。
测定的结果，实施方式的底部填充树脂材料和FC-BGA用树脂材料的填充时间都为300秒，为相同。但是，在FC-BGA用树脂材料浸透后观察到流痕(flow mark)。流痕是由树脂中的填料和/或其它成分的偏析等造成的，不均一的部分呈条状的现象，在树脂的流动性差的情况下发生。若发生流痕，则流动的前端形状杂乱，浸透时卷入空气，容易发生空洞，因此不被期望。通过该实验，可确定用于形成实施方式的底部填充树脂的树脂材料与FC-BGA用树脂材料相比流动性良好。
在第1实施方式的半导体装置10中，半导体芯片叠层体2如下所示，被搭载在布线基板1上，并被电连接。半导体芯片叠层体2的下级侧的第1半导体芯片2a的底面通过芯片贴装(dia touch)材料5被固定在布线基板1上。
上述构造可以通过包括形成半导体芯片叠层体2的工序和在布线基板1上安装该半导体芯片叠层体2的工序的方法形成。另外，也可以通过包括将第1半导体芯片2a配置在布线基板1上的第1工序和将第2半导体芯片2b配置在第1半导体芯片2a上，经由凸起3连接这些芯片的第2工序的其他方法形成。
在该第1半导体芯片2a的顶面(元件电路面)的周边部配置的连接衬垫21a和布线基板1的连接端子1a通过金线等的接合线6连接。在布线基板1的背面设置由焊料球等形成的外部连接用端子7。
形成包括模塑树脂的密封层8，用于覆盖半导体芯片叠层体2，以及半导体芯片叠层体2和布线基板1的所述连接部的外侧。密封层8的侧端面相对于布线基板1的主面垂直地形成。
使用环氧系的树脂作为构成密封层8的模塑树脂。优选使用物理属性值在以下所示的范围的模塑树脂。另外，这些物理属性值是通过上述的TMA的测定得到的值。
Tg：130～200℃
小于Tg的温度的热膨胀率(CTE1)：0.8～1.4ppm/℃
Tg以上的温度的热膨胀率(CTE2)：3.0～4.9ppm/℃
弹性率：15～30GPa
使用具有上述物理属性值的模塑树脂的情况下，由密封层8造成的热应力的缓和效果好，特别地，具有减少封装整体的翘曲的优异的效果。
在第1实施方式中，由含有胺系的固化剂的树脂材料的固化物，即Tg为65℃以上且100℃以下的底部填充树脂构成底部填充层4，因此，能够抑制温度周期施加时的在第2半导体芯片2b侧面的底部填充树脂的剥离，防止第1半导体芯片2a的内部布线的切断等的断线缺陷。
一般地，温度周期施加时的底部填充树脂的剥离被认为是以半导体芯片(第2半导体芯片2b)的侧面和底部填充树脂之间起作用的剥离应力为起因发生。通过使底部填充树脂的Tg下降到100℃以下，有效降低上述剥离应力。另外，通过使底部填充树脂含有胺系的固化剂，有效增大向半导体芯片侧面的底部填充树脂的附着力。在实施方式中，通过综合这两个效果，能够防止底部填充树脂的剥离。
另外，在图1所示的第1实施方式中，在半导体芯片叠层体2上，还可以层叠其他的半导体芯片(存储芯片等)。即，在半导体芯片叠层体2的第2半导体芯片2b上，面向上(元件电路面为上侧)层叠第3半导体芯片，以芯片贴装材料等固定，另外也可以采用通过接合线连接的方式。
接下来，说明第1实施方式的具体的实施例。
实施例1～11，比较例1～6
(底部填充树脂A～L)
首先，将环氧系树脂与表1所示的粒径(平均粒径以及最大粒径)的无机填充材料(二氧化硅粉末)以在同表所示的配合比例(质量％)混合，而且添加·混合表1所示的固化剂，调制底部填充树脂材料AA～LL。
如此得到的底部填充树脂材料AA～LL的固化物即底部填充树脂A～L，Tg，热膨胀率(CTE1、CTE2)以及弯曲弹性率(25℃)通过TMA求出。这些测定结果分别在表1表示。另外，TMA测定时，使用了MAC SCIENCE公司制的热机械分析装置。
Figure BDA0000137788320000081
(半导体装置的制造)
接下来，将用于形成表1所示的底部填充树脂A～L的树脂材料AA～LL填充到第1半导体芯片2a和第2半导体芯片2b之间的间隙，使其热固化，形成包含底部填充树脂A～L的底部填充层。另外，使用a以及b的2种模塑树脂形成密封层8，制造了图1所示半导体装置10。模塑树脂a以及b的物理属性值如下所示。
第1半导体芯片2a的尺寸为7.5mm×7.1mm，第2半导体芯片2b的尺寸为5.9mm×5.2mm，厚度均为150μm。另外，连接这些半导体芯片间的凸起3为Sn-Cu焊料凸起，设凸起直径为30μm，间隔为60μm。模塑树脂a的物理属性值：Tg为130℃，CTE1为0.8ppm/℃，CTE2为3.0ppm/℃，25℃的弯曲弹性率为30GPa。另外，模塑树脂b的物理属性值：Tg为200℃，CTE1为1.4ppm/℃，CTE2为4.9ppm/℃，25℃的弯曲弹性率为15GPa。另外，模塑树脂的物理属性值与上述底部填充树脂同样，是使用MACSCIENCE公司制的热机械分析装置，通过TMA法测定的值。
(可靠性试验)
通过温度周期试验(-55℃/125℃)确认了由实施例1～11以及比较例1～6得到的半导体装置10的可靠性。在这些半导体装置10，施加了500周期的-55℃/125℃的温度周期后，截面分析研究了第2半导体芯片2b的侧面和底部填充树脂之间的剥离的有无。结果在表2显示。
Figure BDA0000137788320000101
从表2的结果可以确认，在实施例1～11中，使用包含胺系的固化剂，且固化物的Tg为65℃以上且100℃以下的底部填充树脂材料BB～II，形成包括底部填充树脂B～I的底部填充层4，因此，在温度周期试验(TCT)中，没有产生底部填充层4的剥离，能够得到可靠性高的半导体装置10。
(第2实施方式)
图2是表示第2实施方式的半导体装置的截面图。
图2所示的第2实施方式的半导体装置10具有在作为一个主面的表面(图2中的上表面)具有布线电路，在背面具有通过镀金等形成的外部连接用端子7的布线基板1。在该布线基板1的表面，安装相互以预定的间隔配置了第1到第4的4个半导体芯片2a、2b、2c、2d的半导体芯片叠层体2。另外，第1半导体芯片2a、第2半导体芯片2b、第3半导体芯片2c以及第4半导体芯片2d具有大致相同的主面的面积。另外，厚度均为50μm以下。
在布线基板1的表面，形成包括镀金层的连接端子1a，作为最下级的半导体芯片的第1半导体芯片2a经由第1凸起连接部3a被连接在该连接端子1a上。另外，在该第1半导体芯片2a上，配置第2半导体芯片2b，第2半导体芯片2b和第1半导体芯片2a经由第2凸起连接部3b被连接。另外，在第2半导体芯片2b上配置第3半导体芯片2c，第2半导体芯片2b和第3半导体芯片2c经由第3的凸起连接部3c被连接，并且在第3半导体芯片2c上配置第4半导体芯片2d，这些半导体芯片经由第4凸起连接部3d被连接。第1到第4半导体芯片2a、2b、2c、2d间的间隙均为5～50μm。
通过第1凸起连接部3a，将第1半导体芯片2a的下面侧的例如焊料凸起和布线基板1的包括镀金层的连接端子1a连接。另外，分别在各半导体芯片的下级侧形成Sn-Ag焊料(熔点221℃)和/或Sn-Cu焊料(熔点227℃)等的Sn系焊料和/或Sn的凸起，在上级侧形成Sn-Ag焊料和/或Sn-Cu焊料等的Sn系焊料、或者Sn、Au、Ag、Pd、Ni、Cu等的凸起，通过第2凸起连接部3b、第3凸起连接部3c、以及第4凸起连接部3d，将这些凸起一体化接合。凸起直径为5～50μm，排列的间隔为10～100μm。
另外，在第1半导体芯片2a、第2半导体芯片2b以及第3半导体芯片2c分别设置贯通表面和背面的被称作TSV(Through Silicon Via，贯通硅过孔)的过孔(省略图示)，层叠的第1半导体芯片2a到第4半导体芯片2d被相互电连接。
在这样经由凸起被连接的第1半导体芯片2a和布线基板1的间隙，以及第1半导体芯片2a到第4半导体芯片2d的各半导体芯片间的间隙，分别填充热固化性树脂材料，形成底部填充层4。底部填充层4与第1实施方式相同，通过含有无机填充材料以及胺系的固化剂的环氧系树脂的固化物即底部填充树脂构成。底部填充树脂的Tg为65℃以上且100℃以下。底部填充树脂的优选Tg为65℃以上且95℃以下，更优选Tg为65℃以上且90℃以下。底部填充树脂作为无机填充材料，优选含有平均粒径为小于0.5μm，最大粒径为3.0μm以下的二氧化硅粉末。
用于形成底部填充树脂的树脂材料(底部填充树脂材料)的填充，可以在第1半导体芯片2a到第4半导体芯片2d的4个半导体芯片全部层叠·配置之后，在布线基板1和第1半导体芯片2a的间隙，以及各半导体芯片间的间隙一次填充。另外，也可以从下级侧开始顺序层叠半导体芯片，并在形成的间隙顺序填充底部填充树脂材料。
半导体芯片叠层体2经由第1凸起连接部3a被连接于布线基板1的连接端子1a，并且通过布线基板1的布线电路，与在背面形成的外部连接用端子7连接。
以覆盖半导体芯片叠层体2以及半导体芯片叠层体2和布线基板1的上述连接部的外侧的方式，形成包括模塑树脂的密封层8。密封层8的侧端面相对于布线基板1的主面垂直地形成。作为模塑树脂优选使用具有与第1实施方式同样的物理属性值的环氧系树脂。
在如此构成的第2实施方式中，能够抑制温度周期施加时在半导体芯片侧面的底部填充树脂的剥离。
根据以上说明的至少一个实施方式，在芯片上芯片型的半导体装置中，通过由含有胺系的固化剂的环氧系树脂的固化物(Tg为65℃以上且100℃以下)构成底部填充层4，能够在温度周期施加时抑制在上级侧的半导体芯片侧面的底部填充树脂的剥离，提高可靠性。
本发明虽然说明了几个实施方式，但是这些实施方式仅作为示例，并不旨在限定发明的范围。这些新的实施方式可以以其他的各种各样的方式实施，在没有脱离发明的要旨的范围，可进行各种的省略、置换、变更。这些实施方式和/或其变形也包含在发明的范围和/或要旨内，并且包含在与权利要求书的范围记载的发明均等的范围内。

Claims (20)

1.一种半导体装置，其特征在于，具备：
布线基板，其在至少一个主面具有布线层；
半导体芯片叠层体，其在所述布线基板的所述主面安装，以预定的间隔重叠配置有2个以上的半导体芯片，且各半导体芯片相互地经由凸起被电连接；
底部填充层，其包括在所述半导体芯片叠层体的各半导体芯片之间的间隙填充的树脂；和
密封层，其包括覆盖并形成于所述半导体芯片叠层体的外侧的模塑树脂；
所述底部填充层包括包含胺系的固化剂的树脂材料的固化物，且所述固化物的玻璃化转变温度(Tg)为65℃以上且100℃以下。
2.如权利要求1所述的半导体装置，其特征在于，
所述半导体芯片叠层体具有第1半导体芯片和第2半导体芯片，所述第1半导体芯片面向上配置于所述布线基板的所述主面，所述第2半导体芯片在所述第1半导体芯片上以元件电路面相对置的方式被配置，所述第2半导体芯片的主面的面积小于所述第1半导体芯片的主面的面积。
3.如权利要求1所述的半导体装置，其特征在于
构成所述底部填充层的树脂为环氧系树脂。
4.如权利要求1所述的半导体装置，其特征在于，
所述底部填充层含有平均粒径小于0.5μm的无机填充材料。
5.如权利要求4所述的半导体装置，其特征在于
所述无机填充料为二氧化硅粉末。
6.如权利要求1所述的半导体装置，其特征在于，
所述凸起包括Sn-Ag焊料以及Sn-Cu焊料这样的Sn系焊料，和/或选自Au、Sn、Cu、Ag、Pd以及Ni中的至少1种金属材料。
7.如权利要求1所述的半导体装置，其特征在于，
所述凸起的直径为5～50μm，排列的间隔为10～100μm。
8.如权利要求1所述的半导体装置，其特征在于，
构成所述半导体芯片叠层体的各半导体芯片之间的间隙为5～50μm。
9.如权利要求1所述的半导体装置，其特征在于，
构成所述半导体芯片叠层体的2个以上的半导体芯片的厚度均为350μm以下。
10.如权利要求1所述的半导体装置，其特征在于，
所述模塑树脂的Tg为130～200℃，小于Tg的温度的热膨胀率(CTE1)为0.8～1.4ppm/℃，Tg以上的温度的热膨胀率(CTE2)为3.0～4.9ppm/℃，弯曲弹性率为15～30GPa。
11.如权利要求1所述的半导体装置，其特征在于，
所述模塑树脂为环氧系树脂。
12.如权利要求1所述的半导体装置，其特征在于，
所述密封层的侧端面相对于所述布线基板1的主面垂直地形成。
13.如权利要求1所述的半导体装置，其特征在于，
所述半导体芯片叠层体具有主面的面积大致相同的2个以上的半导体芯片相互以预定的间隔配置，经由所述凸起被连接的构造。
14.如权利要求13所述的半导体装置，其特征在于，
构成所述半导体芯片叠层体的2个以上的半导体芯片的厚度均为50μm以下。
15.一种半导体装置的制造方法，其特征在于，具备：
准备在至少一个主面具有布线层的布线基板的步骤；
将2个以上的半导体芯片在所述布线基板的主面以预定的间隔重叠配置，将各半导体芯片相互地经由凸起电连接而安装的步骤；
在所述半导体芯片叠层体的各半导体芯片间的间隙注入填充热固化性树脂材料的步骤；
通过使所述热固化性树脂材料热固化，在所述间隙形成包括底部填充树脂的底部填充层的步骤；和
以覆盖所述半导体芯片叠层体的外侧的方式形成包括模塑树脂的密封层的步骤；
所述底部填充树脂包含胺系的固化剂，具有65℃以上且100℃以下的玻璃化转变温度(Tg)。
16.如权利要求15所述的半导体装置的制造方法，其特征在于，
所述热固化性树脂材料为以环氧系树脂为主体的材料。
17.如权利要求15所述的半导体装置的制造方法，其特征在于，
所述热固化性树脂材料含有平均粒径小于0.5μm的无机填充材料。
18.如权利要求15所述的半导体装置的制造方法，其特征在于，
构成所述半导体芯片叠层体的各半导体芯片之间的间隙为5～50μm。
19.如权利要求15所述的半导体装置的制造方法，其特征在于，
构成所述半导体芯片叠层体的2个以上的半导体芯片的厚度均为350μm以下。
20.如权利要求15所述的半导体装置的制造方法，其特征在于，
所述模塑树脂的Tg为130～200℃，小于Tg的温度的热膨胀率(CTE1)为0.8～1.4ppm/℃，Tg以上的温度的热膨胀率(CTE2)为3.0～4.9ppm/℃，弯曲弹性率为15～30GPa。
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