CN102486620B - 用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物 - Google Patents

用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物 Download PDF

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Publication number
CN102486620B
CN102486620B CN201110271127.3A CN201110271127A CN102486620B CN 102486620 B CN102486620 B CN 102486620B CN 201110271127 A CN201110271127 A CN 201110271127A CN 102486620 B CN102486620 B CN 102486620B
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photoresist
composition
weight
stripping composition
corrosion inhibitor
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CN102486620A (zh
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崔好星
全汶教
裵钟一
李钟淳
梁惠星
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LTC CO Ltd
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LTC CO Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Liquid Crystal (AREA)
CN201110271127.3A 2010-12-02 2011-09-14 用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物 Active CN102486620B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0122001 2010-12-02
KR1020100122001A KR101089211B1 (ko) 2010-12-02 2010-12-02 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물

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CN201610079171.7A Division CN105676602A (zh) 2010-12-02 2011-09-14 用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物

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CN102486620A CN102486620A (zh) 2012-06-06
CN102486620B true CN102486620B (zh) 2016-06-01

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CN201610079171.7A Pending CN105676602A (zh) 2010-12-02 2011-09-14 用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物
CN201110271127.3A Active CN102486620B (zh) 2010-12-02 2011-09-14 用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物

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Country Status (4)

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JP (3) JP2012118502A (enExample)
KR (1) KR101089211B1 (enExample)
CN (2) CN105676602A (enExample)
TW (1) TWI465564B (enExample)

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CN108949383A (zh) * 2017-05-17 2018-12-07 东曹株式会社 清洗剂组合物和使用其的清洗方法

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KR101668063B1 (ko) * 2013-05-07 2016-10-20 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
TWI644931B (zh) * 2013-08-22 2018-12-21 Nissan Chemical Industries, Ltd. 具有橫向電場驅動型液晶顯示元件用液晶配向膜之基板之製造方法
KR102009533B1 (ko) 2013-09-06 2019-08-09 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 평판표시장치의 제조방법
KR102012464B1 (ko) 2013-09-06 2019-08-20 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 평판표시장치의 제조방법
TWI518467B (zh) * 2013-11-15 2016-01-21 達興材料股份有限公司 光阻脫除劑和電子元件及其製造方法
KR101764577B1 (ko) * 2015-08-13 2017-08-23 엘티씨 (주) Lcd 제조용 포토레지스트 박리액 조성물
CN106547177A (zh) * 2015-09-16 2017-03-29 东友精细化工有限公司 抗蚀剂剥离液组合物、平板显示器基板及其制造方法
CN106919013B (zh) * 2015-12-28 2021-12-07 安集微电子（上海）有限公司 一种低蚀刻的去除光阻残留物的清洗液
CN106019863B (zh) * 2016-07-14 2019-08-09 江阴江化微电子材料股份有限公司 一种高世代平板铜制程光阻剥离液
CN108235741B (zh) * 2016-12-28 2019-05-28 松下知识产权经营株式会社 抗蚀剂剥离液
CN107577121A (zh) * 2017-08-29 2018-01-12 昆山艾森半导体材料有限公司 一种光刻胶去胶液
KR102224907B1 (ko) * 2018-04-17 2021-03-09 엘티씨 (주) 드라이필름 레지스트 박리액 조성물
KR102324927B1 (ko) * 2019-10-01 2021-11-12 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR102334425B1 (ko) 2019-11-21 2021-12-01 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물
CN120303619A (zh) * 2022-12-12 2025-07-11 三菱瓦斯化学株式会社 光致抗蚀剂去除用组合物及光致抗蚀剂的去除方法
KR102825130B1 (ko) * 2024-06-13 2025-06-27 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물

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CN108949383B (zh) * 2017-05-17 2021-05-25 东曹株式会社 清洗剂组合物和使用其的清洗方法

Also Published As

Publication number Publication date
CN102486620A (zh) 2012-06-06
CN105676602A (zh) 2016-06-15
TW201224140A (en) 2012-06-16
JP6006711B2 (ja) 2016-10-12
JP2014063186A (ja) 2014-04-10
JP2017040928A (ja) 2017-02-23
KR101089211B1 (ko) 2011-12-02
TWI465564B (zh) 2014-12-21
JP2012118502A (ja) 2012-06-21

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