WO2009051237A1 - 剥離液組成物、それを用いた樹脂層の剥離方法 - Google Patents

剥離液組成物、それを用いた樹脂層の剥離方法 Download PDF

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Publication number
WO2009051237A1
WO2009051237A1 PCT/JP2008/068885 JP2008068885W WO2009051237A1 WO 2009051237 A1 WO2009051237 A1 WO 2009051237A1 JP 2008068885 W JP2008068885 W JP 2008068885W WO 2009051237 A1 WO2009051237 A1 WO 2009051237A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid composition
remover liquid
resin layer
same
removing resin
Prior art date
Application number
PCT/JP2008/068885
Other languages
English (en)
French (fr)
Inventor
Masao Kanari
Takuya Saguchi
Original Assignee
Henkel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Henkel Corporation filed Critical Henkel Corporation
Priority to JP2009538171A priority Critical patent/JP5318773B2/ja
Priority to CN200880118038.1A priority patent/CN101878452B/zh
Priority to KR1020107010619A priority patent/KR101286777B1/ko
Publication of WO2009051237A1 publication Critical patent/WO2009051237A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Paints Or Removers (AREA)

Abstract

　カラーフィルター、フォトレジスト、オーバーコートなどの樹脂層の剥離性に優れ、金属配線などの金属類を含む部材に対する防食作用を併せ持つ剥離液組成物が提供される。この剥離液組成物は、アルカノールアミン類、芳香族アルコール類および防食剤を含む。
PCT/JP2008/068885 2007-10-17 2008-10-17 剥離液組成物、それを用いた樹脂層の剥離方法 WO2009051237A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009538171A JP5318773B2 (ja) 2007-10-17 2008-10-17 剥離液組成物、それを用いた樹脂層の剥離方法
CN200880118038.1A CN101878452B (zh) 2007-10-17 2008-10-17 剥离液组合物、使用了该剥离液组合物的树脂层的剥离方法
KR1020107010619A KR101286777B1 (ko) 2007-10-17 2008-10-17 박리액 조성물, 그것을 이용한 수지층의 박리 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007270273 2007-10-17
JP2007-270273 2007-10-17

Publications (1)

Publication Number Publication Date
WO2009051237A1 true WO2009051237A1 (ja) 2009-04-23

Family

ID=40567498

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068885 WO2009051237A1 (ja) 2007-10-17 2008-10-17 剥離液組成物、それを用いた樹脂層の剥離方法

Country Status (4)

Country Link
JP (1) JP5318773B2 (ja)
KR (1) KR101286777B1 (ja)
CN (1) CN101878452B (ja)
WO (1) WO2009051237A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012018982A (ja) * 2010-07-06 2012-01-26 Tosoh Corp レジスト剥離剤及びそれを用いた剥離法
JP2012118502A (ja) * 2010-12-02 2012-06-21 Ltc Co Ltd １級アルカノールアミンを含むｌｃｄ製造用フォトレジスト剥離液組成物
KR101321029B1 (ko) 2011-06-29 2013-10-28 주식회사 엘지화학 부식 방지제를 포함하는 포토레지스트 제거용 조성물
JP5575318B1 (ja) * 2013-09-02 2014-08-20 パナソニック株式会社 レジスト剥離液
JP2015129231A (ja) * 2014-01-08 2015-07-16 東栄化成株式会社 剥離剤及び塗膜の剥離方法
WO2015119759A1 (en) * 2014-02-06 2015-08-13 Dynaloy, Llc Composition for removing substances from substrates
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US9243218B2 (en) 2005-10-28 2016-01-26 Dynaloy, Llc Dynamic multipurpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
CN105886130A (zh) * 2016-04-18 2016-08-24 广东壮丽彩印股份有限公司 一种包装印刷用塑料薄膜的水基脱胶剂
KR101888695B1 (ko) 2012-04-13 2018-08-14 동우 화인켐 주식회사 유-무기 하이브리드형 배향막 제거 조성물
US10156789B2 (en) 2015-09-03 2018-12-18 Nisshin Steel Co., Ltd. Method for stripping resist film from metal plate and method for manufacturing etched metal plate
JP2021050308A (ja) * 2019-09-26 2021-04-01 化研テック株式会社 塗膜剥離剤及び塗膜の剥離方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI746419B (zh) * 2014-02-06 2021-11-21 美商慧盛材料美國有限責任公司 光阻劑剝離溶液
KR20170084578A (ko) * 2016-01-12 2017-07-20 동우 화인켐 주식회사 컬러 레지스트 또는 유기계 절연막 박리액 조성물
TWI608311B (zh) * 2016-03-25 2017-12-11 達興材料股份有限公司 一種光阻脫除組成物及一種利用該光阻脫除組成物進行微影製程的電子元件的製造方法
CN108375879A (zh) * 2017-10-26 2018-08-07 信丰正天伟电子科技有限公司 一种线路板印制成像后的干膜剥除剂
CN109976109A (zh) * 2017-12-27 2019-07-05 安集微电子科技（上海）股份有限公司 一种光刻胶去除剂
CN113348226A (zh) * 2019-01-28 2021-09-03 三菱制纸株式会社 树脂组合物的蚀刻液及蚀刻方法
CN112255899A (zh) * 2020-11-24 2021-01-22 合肥普庆新材料科技有限公司 一种水性pi膜剥离液及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120937A (ja) * 1993-10-26 1995-05-12 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト用剥離液
JPH07271057A (ja) * 1994-03-31 1995-10-20 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト用剥離液
JP2001022095A (ja) * 1999-07-02 2001-01-26 Nippon Zeon Co Ltd ポジ型レジスト用剥離液
JP2001183849A (ja) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62227153A (ja) * 1986-03-28 1987-10-06 Oji Paper Co Ltd Ｐｓ版用画像消去液
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120937A (ja) * 1993-10-26 1995-05-12 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト用剥離液
JPH07271057A (ja) * 1994-03-31 1995-10-20 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト用剥離液
JP2001022095A (ja) * 1999-07-02 2001-01-26 Nippon Zeon Co Ltd ポジ型レジスト用剥離液
JP2001183849A (ja) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9243218B2 (en) 2005-10-28 2016-01-26 Dynaloy, Llc Dynamic multipurpose composition for the removal of photoresists and method for its use
JP2012018982A (ja) * 2010-07-06 2012-01-26 Tosoh Corp レジスト剥離剤及びそれを用いた剥離法
JP2012118502A (ja) * 2010-12-02 2012-06-21 Ltc Co Ltd １級アルカノールアミンを含むｌｃｄ製造用フォトレジスト剥離液組成物
JP2014063186A (ja) * 2010-12-02 2014-04-10 Ltc Co Ltd １級アルカノールアミンを含むｌｃｄ製造用フォトレジスト剥離液組成物
KR101321029B1 (ko) 2011-06-29 2013-10-28 주식회사 엘지화학 부식 방지제를 포함하는 포토레지스트 제거용 조성물
KR101888695B1 (ko) 2012-04-13 2018-08-14 동우 화인켐 주식회사 유-무기 하이브리드형 배향막 제거 조성물
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP5575318B1 (ja) * 2013-09-02 2014-08-20 パナソニック株式会社 レジスト剥離液
TWI494712B (zh) * 2013-09-02 2015-08-01 Panasonic Corp Photoresist stripping solution
TWI494713B (zh) * 2013-09-02 2015-08-01 Panasonic Corp Photoresist stripping solution
JP2015064393A (ja) * 2013-09-02 2015-04-09 パナソニック株式会社 レジスト剥離液
WO2015029277A1 (ja) * 2013-09-02 2015-03-05 パナソニックＩｐマネジメント株式会社 レジスト剥離液
JP2015129231A (ja) * 2014-01-08 2015-07-16 東栄化成株式会社 剥離剤及び塗膜の剥離方法
WO2015119759A1 (en) * 2014-02-06 2015-08-13 Dynaloy, Llc Composition for removing substances from substrates
US10156789B2 (en) 2015-09-03 2018-12-18 Nisshin Steel Co., Ltd. Method for stripping resist film from metal plate and method for manufacturing etched metal plate
CN105886130A (zh) * 2016-04-18 2016-08-24 广东壮丽彩印股份有限公司 一种包装印刷用塑料薄膜的水基脱胶剂
JP2021050308A (ja) * 2019-09-26 2021-04-01 化研テック株式会社 塗膜剥離剤及び塗膜の剥離方法

Also Published As

Publication number Publication date
KR101286777B1 (ko) 2013-07-17
CN101878452A (zh) 2010-11-03
JPWO2009051237A1 (ja) 2011-03-03
JP5318773B2 (ja) 2013-10-16
CN101878452B (zh) 2015-01-07
KR20100077023A (ko) 2010-07-06

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