CN101728337A - 无芯基板、其制造方法以及包含其的微电子器件封装件 - Google Patents

无芯基板、其制造方法以及包含其的微电子器件封装件 Download PDF

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CN101728337A
CN101728337A CN200910211649A CN200910211649A CN101728337A CN 101728337 A CN101728337 A CN 101728337A CN 200910211649 A CN200910211649 A CN 200910211649A CN 200910211649 A CN200910211649 A CN 200910211649A CN 101728337 A CN101728337 A CN 101728337A
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coreless substrate
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CN101728337B (zh
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R·莫尔滕森
M·苏里亚库马
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Intel Corp
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Abstract

一种无芯基板包括其中形成有被镀层的通孔(120，320)的强固材料(110，210，620)、强固材料上方的电绝缘材料(130，230，830)和在电绝缘层中的导电材料(140，240，840)。在同一个或者另一个实施例中，用于微电子器件的封装件包括其中形成有被镀层的通孔(120，320)且进一步具有凹部(118，218)的强固材料层(115，215，615)，强固材料层之上的增加层(150，350，850)，贴装在增加层之上的芯片(370)。该强固材料层和增加层形成封装件的无芯基板(100，380，910，920)。该无芯基板具有表面(381)，并且该芯片覆盖少于无芯基板整个表面从而使得该表面具有至少一个暴露区(382)。

Description

无芯基板、其制造方法以及包含其的微电子器件封装件
技术领域
本发明揭示的实施例通常涉及微电子器件的封装件，更特别的涉及用于该种封装件的无芯基板及其制造方法。
背景技术
微电子器件性能常常依赖于电容器的使用，或者通过电容器的使用来提高。涉及微电子器件的这些电容器的位置也可以成为影响性能的重要参数。因此，例如，很多微电子封装件具有“岸面(land)侧”和/或“芯片(die)侧”电容器：分别位于封装件的岸面侧(有时称为底侧)或者芯片侧(有时称为上侧)的电容器。除了电容器之外，也需要在封装件上设置测试焊盘用来测试电性能和/或该部分的功能或者具有调试该部分的能力的功能。
然而，现有的微电子封装件的特点是大的上侧外部保护区(keep out zone)，也就是封装区域，由于工艺或者设计要求，该封装区域不能容纳电容器、测试焊盘，或者任何其它部件。通常该外部保护区被覆模(overmold)或者用于增强封装件的强固材料所占据。尤其是对于具有无芯基板的封装件来说是这样，它们由于缺少基板芯可以提供的稳定性而必须通过其它手段来增强，从而避免翘曲或者其它可能的变形，而该变形会使得阻碍封装件回流至母板。在这些以及相似的情形中上侧测试焊盘和芯片侧电容器只有当封装件形状系数(formfactor)增大至碰巧为它们提供额外空间时才能够使用，例如，当测试焊盘被置于底侧焊球或者岸面时。这样较大的封装件形状系数本身是不理想的结果，同时还关注的事实是一旦封装件回流至母板或者以别的方式永久贴装至下一级部件时，底侧测试焊盘将成为无法接触的。而且，随着器件和封装件的缩小，减小了封装件支起高度(standoff)，甚至位于底侧封装件空腔内的电容器也会受到影响，使得必须使用薄型部件，如超薄型(XLP)电容器和高级岸面侧电容器(ALSC)。这些缺点中之一是：降低了电容值并且非常昂贵。
附图说明
结合如下的附图，通过对下述具体实施方式的阅读将更好的理解所公开的实施例：
图1是依照本发明实施例的无芯基板的横截面图；
图2是依照本发明实施例的用于微电子器件的封装件的底部平面视图；
图3是依照本发明实施例的图2的封装件的横截面图；
图4是依照本发明实施例制造无芯基板的方法的流程图；
图5-9是依照本发明实施例，在无芯基板制造过程中多个特定点处所示出的无芯基板的横截面图。
为了简化以及清楚说明，所绘附图说明了一般的构造形式，而众所周知的特征和技术的描述和细节可能被省略，以避免与本发明所述实施例的讨论产生不必要的混淆。另外，附图图形中的元件并不一定是按比例绘制的。例如，图中一些元件的尺寸相对于其它元件可能是被夸大了的，以帮助提高对本发明的实施例的理解。不同附图中的相同的附图标记表示相同的元件，而相似的附图标记不一定表示相似的元件。
在具体描述和权利要求中术语“第一”、“第二”、“第三”、“第四”等等，如果有的话，用来区别相似元件，而不一定用来描述一个特定顺序或者按年代顺序排列的次序。应该理解这里所使用的术语在适当的情况下是可互换的，因此，例如，本文所述本发明的实施例可以按照本文所图示的或描述的顺序以外的顺序来操作。类似的，如果本文所述的方法包括一系列步骤，那么本文所呈现的这些步骤的顺序不一定是这些步骤可被执行的唯一顺序，并且所列出的步骤中的某些可以被省略和/或本文没有描述的某些其它步骤可能会被增加到该方法中。此外，术语“包含”、“包括”、“具有”及其任何变化形式，规定为涵盖了非排它性的包含，使得包含一系列元件的过程、方法、物品、或者设备并不一定限于那些元件，而是可以包含其它没有清楚的列出或者在该过程、方法、产品或设备中所固有的元件。
在具体实施方式和权利要求中的术语“左”、“右”、“前”、“后”、“上”、“底”、“在...之上”、“在...之下”等等，如果有的话，是用于描述的目的，而不是一定用于描述固定不变的相对位置。应该理解所使用的术语在适当的情况下是可互换的，因此，例如，本文所描述的本发明的实施例可以按照本文所图示的或描述的那些以外的取向来操作。本文所用的术语“耦合”定义为直接或者间接以电的或者非电的方式连接。本文所描述的对象彼此“邻近”，根据短语所使用的上下文而具有适当的含义，可能是彼此物理接触、彼此靠近，或者彼此在相同大致部位或区域中。本文短语“在一个实施例中”的出现，不是一定都指代相同的实施例。
具体实施方式
在本发明的一个实施例中，无芯基板包括其中形成有被镀层的通孔的强固材料(stiffener material)、位于强固材料上方的电绝缘材料，和位于电绝缘材料中的导电材料。在相同或其它的实施例中，用于微电子器件的封装件包括其中形成有多个被镀层的通孔并且进一步其中具有凹部的强固材料层、位于强固材料层之上的增加层(build-up layer)，和在增加层之上贴装的芯片(die)。强固材料层和增加层形成该封装件的无芯基板。该无芯基板具有一表面，并且该芯片覆盖小于该无芯基板该表面的全部以使得该表面具有至少一个暴露区(exposed region)。
为了更好的功率传输性能，本发明的实施例允许标准岸面侧电容器设置于基板空腔内。另外，本发明的实施例由于上侧外部保护区的移除而提供较小的无芯封装件形状系数。该外部保护区的移除提供了无覆盖基板上侧，以在该无覆盖基板上侧设置离散的部件和/或测试焊盘，而否则其会被覆模(overmold)或者强固材料所覆盖。这些基板可以具有足够的刚性以易于组合或者剥离加工，从而同时减少装配成本和封装件形状系数。
现在参照附图，图1是依照本发明实施例的无芯基板100的横截面图。如图1所示，无芯基板100包括强固材料110，其中形成有被镀层的通孔120。被镀层的通孔120终止于导电焊盘125，例如铜焊盘或类似物。在所示的实施例中，强固材料110形成无芯基板100的强固材料层115，或者是位于无芯基板100的强固材料层115中，并且无芯基板100进一步包括位于强固层115中的凹部118。作为例子，强固材料110可以是模塑化合物或类似物。在至少一个实施例中，选择强固材料110使得它能够易于从增加层脱离或者移除，该增加层在下文介绍。无芯基板100进一步包括强固材料110上方的电绝缘材料130和位于电绝缘材料130中的导电材料140-包括岸面141。电绝缘材料130和导电材料140一起形成增加层150。
例如，被镀层的通孔120可以用铜或者其它合适的导电材料作内衬(被镀层)。导电材料140也可以是铜或者类似物。无芯基板100进一步包括位于电绝缘材料130之上的电绝缘层160。例如，电绝缘层160可以是焊料掩模(soldermask)层。
图2是依照本发明的实施例的用于微电子器件的封装件200的底部平面视图。图3是图2的封装件200沿3-3线的横截面视图。如图2和图3所示，封装件200包括强固材料层215，其包含强固材料210并且其中形成有多个被镀层的通孔320，并且进一步其中具有凹部218。增加层350位于强固材料层215之上并且包括电绝缘材料230和导电材料240。导电材料240包括岸面241。电绝缘层360位于增加层350之上。例如，强固材料210、强固材料层215、凹部218、被镀层的通孔320、电绝缘材料230、导电材料240、岸面241、增加层350，和电绝缘层360可以分别与如图1全部所示的强固材料110、强固材料层115、凹部118、被镀层的通孔120、电绝缘材料130、导电材料140、岸面141、增加层150和绝缘层160相似。
封装件200进一步包括贴装在增加层350之上的芯片370。如图所示，强固材料层215、增加层350和电绝缘层360形成了封装件200的无芯基板380。无芯基板380具有表面381，并且芯片370覆盖小于无芯基板380的整个表面381，因此表面381具有至少一个暴露区382。如上所述的，能够形成暴露区382的原因是在封装件岸面侧的强固材料为封装件提供了足够的硬度和强度，因此在封装件的芯片侧不需要额外的强固件、覆模或者其它增强材料。这使得基板表面一定部分处于暴露且开放，并且可以用来设置一个或者多个期望的部件，如图所示的。
芯片370通过环氧树脂390或者类似的粘合剂材料贴装于无芯基板380。焊料凸块375电连接芯片370到导电材料240。焊球395提供将封装件200贴装到如母板等下一级部件的手段。
在所示的实施例中，封装件200包括凹部218中的电容器325。如上文所阐明的，封装件200的配置使得电容器325可以是标准的或者薄型电容器而非ALSCs或XLP电容器，并且它们设置在凹部218中提高了封装件200的功率传输性能。标准的或者薄型的电容器也比ALSC或者XLP电容器廉价。值得注意的是，虽然一般情况下在底部平面视图中邻近岸面241的电容器是可见的，但为了清楚起见，附图2中省略了电容器325。因此电容器325仅在图3中描述。
图3还显示了位于无芯基板380的表面381的暴露区382中的部件397。作为一个例子，部件397可以为电容器、测试焊盘，或者类似的。在没有图示的实施例中，封装件200在暴露区382中同时包括电容器(或者其他无源器件)和测试焊盘-或者一些其它组合或其他数量的这样的部件。作为一个例子，在表面381上的测试焊盘的可用性极大方便了在封装件200已经贴装到母板或者其他下一级部件(此时，岸面侧测试焊盘不再是易于接触的)上时对器件的测试。
图4是图示了依照本发明一个实施例制造无芯基板的方法400的流程图。作为一个例子，方法400可以产生如图1所示的无芯基板100相似的无芯基板的形成。方法400通过图5-9进一步描述，每幅图都是无芯基板在依照本发明的实施例的制造过程中各个特定点时的横截面图。
方法400的步骤410是提供初始结构，其包括在相对两侧上涂覆有导电膜层的芯材料。作为一个例子，该初始结构可以与图5中首先所示的初始结构500相似。作为另一个例子，芯材料可以与芯材料510相似并且导电膜层可以与导电膜层520相似，其二者都在图5中首先示出。
如图5所示，并且如上文所记载的，初始结构500包括芯材料510，其上表面和底表面被导电膜层520所涂覆。作为一个例子，导电膜层520可以包括铜箔或类似的。
方法400的步骤420在导电膜层上形成第一导电材料的凸起或者增加区域。在一个实施例中，第一导电材料可以为铜或相似的材料。因此，导电材料的凸起区域可以与如图5首先所示的铜焊盘525相似，尽管应该理解(如上文所暗示的)可以备选地使用其它材料来替代铜。作为一个例子，铜焊盘525与图1所示的导电焊盘125相似。在一个实施例中，铜焊盘525通过在铜箔上电镀铜区域而形成。
方法400的步骤430在导电膜层的部分之上形成间隔件。作为一个例子，间隔件可以与图6首先示出的间隔件610相似。作为另一个例子，间隔件610可以包括一个塑性成型间隔件或者金属块间隔件。在一实施例中，步骤430包括对间隔件模压成型或者将预制间隔件设置于适当位置。通过下面的讨论将阐明，在后续步骤中移走间隔件在无芯基板的合适位置形成空腔以用来容纳电容器。这些岸面侧电容器可以提高封装件的功率传输和其他性能(如上文提及)。
方法400的步骤440在邻近间隔件处且在导电材料的凸起区域之上提供强固材料。作为一个例子，该强固材料可以与图6首先示出的强固材料620相似。作为另一个例子，强固材料620可以包括模塑化合物。在所示的实施例中，强固材料620位于强固材料层615中。作为一个例子，强固材料层615可以与图1所示的强固材料层115相似。
应该理解，在方法400的一些实施例中，步骤430和440可以颠倒顺序，或者结合成为一个步骤来进行。也就是说，在一些实施例中强固材料可以在间隔件之前(或者与间隔件同时)施加。
方法400的步骤450在强固材料中形成通孔，并采用第二导电材料对通孔进行镀层。在一个实施例中，该第二导电材料与该第一导电材料相同或者相似。作为一个例子，该通孔可以与图7首先所示的通孔710相似。在一个实施例中，步骤450包括采用现有技术中已知的任意一种合适的激光辅助的材料移除工艺，利用激光钻成通孔。也可以采用机械钻孔工艺。
方法400中的步骤460在间隔件和强固材料之上形成增加层。作为一个例子，该增加层可以与图1中首先示出的增加层150相似。作为另一个例子，该增加层可以与图8首先示出的增加层850相似。在一个实施例中，步骤460或者另一个步骤可以包括增加层之上(或者作为其最上方的层)的电绝缘层的形成。作为一个例子，该电绝缘层可以与图1中首先示出的电绝缘层160相似。作为另一个例子，该电绝缘层可以与图8中首先示出的电绝缘层860相似。
如图8所示，在执行了步骤460之后，初始结构500包括电绝缘材料830和导电材料840。作为另一个例子，电绝缘材料830和导电材料840可以分别类似于图1中所示的二者电绝缘材料130和导电材料140。
方法400的步骤470将初始结构分离为第一片和第二片。经过一些进一步的处理过程，如下描述的，第一片和第二片成为完整的无芯基板。因此，在所示的实施例中，方法400将每个初始结构转变为两个单独的无芯基板。步骤470可以采用任何合适的分离技术完成。
方法400的步骤480从第一片和第二片上移除芯材料、间隔件和导电膜层。图9示出了步骤480的执行结果。如所示出的，初始结构500已经被转变为两个基本上相同的无芯基板910和920，每个无芯基板可以与图1所示的无芯基板100相似。在一个实施例中，步骤480包括采用适当蚀刻技术蚀刻该芯材料、间隔件和导电膜层。
尽管本发明已经关于特定实施例进行了详细描述，但是本领域技术人员可以理解，可以做出各种变化而不偏离本发明的精神和范围。因此，本发明实施例的公开的意思仅是要说明本发明范围，不是对本发明的限制。意思是本发明的范围只能被限制为附上的权利要求所要求的范围。例如，对于一位本领域技术人员，显然本文所公开的无芯基板、微电子封装件和相关方法可以在各个实施例中实现，并且前述讨论的这些实施例的某一个没有必要给出所有可能实施例的完整的描述。
另外，尽管已经关于特定实施例描述了益处、其它优势和问题的解决办法。但是，对于该益处、优势、问题的解决办法和可以带来任何益处、优势或者使得解决办法发生或更明显的任意一个或多个元件不能看成是所有权利要求或者任意权利要求的关键性的、所要求的或者必要特征或者元件。
此外，如果本文公开的实施例和/或限制：(1)没有在权利要求中清楚声明保护；并且(2)在等效原则下是权利要求中所述元件和/或限制的可能等效物，则基于专用原则，该实施例和限制不供公众使用。

Claims (18)

1.一种无芯基板，包括：
强固材料，其中形成有被镀层的通孔；
在所述强固材料上方的电绝缘层；和
在所述电绝缘层中的导电材料。
2.如权利要求1所述的无芯基板，进一步包括：
在所述电绝缘层之上的第二电绝缘层。
3.如权利要求2所述的无芯基板，其中：
所述强固材料形成所述无芯基板的强固材料层；并且所述无芯基板进一步包括位于所述强固材料层中的凹部。
4.一种用于微电子器件的封装件，所述封装件包括：
强固材料层，其中形成有被镀层的通孔并且其中进一步具有凹部；
位于所述强固材料层之上的增加层，所述增加层包括电绝缘材料和导电材料；
贴装在所述增加层之上的芯片，
其中：
所述强固材料层和增加层形成所述封装件的无芯基板；
所述无芯基板具有一表面；并且
所述芯片覆盖小于所述无芯基板的整个所述表面，从而所述表面具有至少一个暴露区。
5.如权利要求4所述的封装件，进一步包括：
位于所述凹部中的电容器。
6.如权利要求5所述的封装件，进一步包括：
位于所述无芯基板所述表面的暴露区中的部件。
7.如权利要求6所述的封装件，其中：
所述部件为电容器。
8.如权利要求6所述的封装件，其中：
所述部件为测试焊盘。
9.如权利要求4所述的封装件，进一步包括：
位于所述无芯基板所述表面的暴露区中的无源部件和测试焊盘。
10.如权利要求9所述的封装件，进一步包括：
位于所述凹部中的电容器。
11.如权利要求4所述的封装件，进一步包括：
位于所述芯片和所述增加层之间的环氧树脂层，其中所述环氧树脂层将所述芯片贴装到所述无芯基板。
12.一种制造无芯基板的方法，所述方法包括：
提供初始结构，所述初始结构包括在相对的两侧上涂覆有导电膜层的芯材料；
在所述导电膜层上形成第一导电材料的凸起区域；
在所述导电膜层的一部分之上形成间隔件；
邻近所述间隔件并且在所述第一导电材料的凸起区域之上提供强固材料，；
在所述强固材料中形成通孔并且采用第二导电材料对所述通孔镀层；
在所述间隔件和所述强固材料之上形成增加层；
将所述初始结构分成第一片和第二片；
从所述第一片和第二片上移除所述芯材料、所述间隔件和所述导电膜层。
13.如权利要求12所述的方法，其中：
提供初始结构包括提供在相对的两侧上涂覆有铜箔的芯材料。
14.如权利要求13所述的方法，其中：
形成第一导电材料的凸起区域包括向所述铜箔上电镀铜区。
15.如权利要求12所述的方法，其中：
形成间隔件包括形成塑性成型的间隔件或者金属块间隔件。
16.如权利要求12所述的方法，其中：
在所述强固材料中形成通孔包括通过激光钻孔形成通孔。
17.如权利要求12所述的方法，其中：
将所述初始结构分成第一片和第二片包括从所述芯材料中切割。
18.如权利要求12所述的方法，其中：
移除所述芯材料、所述间隔件和所述导电膜层包括采用湿法蚀刻或者干法蚀刻来蚀刻所述芯材料、所述间隔件和所述导电膜层。
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