CN105789174B - 半导体封装及半导体封装基座的制造方法 - Google Patents

半导体封装及半导体封装基座的制造方法 Download PDF

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Publication number
CN105789174B
CN105789174B CN201610206320.1A CN201610206320A CN105789174B CN 105789174 B CN105789174 B CN 105789174B CN 201610206320 A CN201610206320 A CN 201610206320A CN 105789174 B CN105789174 B CN 105789174B
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Prior art keywords
conducting wire
pedestal
semiconductor packages
top surface
conductive structure
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CN201610206320.1A
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CN105789174A (zh
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林子闳
许文松
于达人
张垂弘
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MediaTek Inc
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MediaTek Inc
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Priority claimed from US13/721,983 external-priority patent/US9177899B2/en
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Priority claimed from CN201310286640.9A external-priority patent/CN103579169B/zh
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract

本发明提供一种半导体封装及半导体封装基座的制造方法。上述半导体封装包括导线，内嵌于基座中；导电结构，直接接触该导线；以及半导体装置，安置于该导线上方并且连接至该导电结构；其中，该导线作为该基座的互连导线，用于该半导体装置的输入/输出连接。本发明所提出的半导体封装及半导体封装基座的制造方法，可改善产品的可靠度和质量。

Description

半导体封装及半导体封装基座的制造方法
本申请是2013年07月09日申请的，申请号为201310286640.9的中国发明专利申请的分案申请
技术领域
本发明是有关于一种半导体封装及半导体封装基座(base)的制造方法，特别是有关于一种高密度(high density)半导体封装的基座的制造方法以及半导体封装。
背景技术
为了确保电子产品或通信设备的小型化和多功能性，通常要求半导体封装具有小尺寸，以支持多针(multi-pin)连接、高速和高功能。输入/输出(I/O)引脚数的增加再加上对高性能集成电路(IC)的需求增加，导致了覆晶封装体(flip chip packages)的发展。
覆晶技术使用芯片上的凸块以与封装基板(substrate)互连。正面朝下的覆晶经过最短的路径接合至封装基板。这些技术可以不仅适用于单一芯片封装技术，也可以适用于更高层数或集成层数的封装技术，在更高层数或集成层数的封装技术中的封装体更大，且这些技术可以适用于容纳数个芯片的更复杂的基板，以形成较大的功能单元。使用区域数组(area array)的上述覆晶技术可实现与装置的更高的密度连接和非常低的电感的封装体连接。然而，上述覆晶技术要求印刷电路板(PCB)制造商缩小线宽和线距或发展芯片直接接触(direct chip attach,DCA)半导体。因此，增加输入/输出(I/O)连接数量的多功能芯片封装会导致热电特性问题，举例来说，散热问题、串音(crosstalk)、信号传输延迟(Propagation Delay)或射频(RF)电路的电磁干扰等问题。上述热电特性问题会影响产品的可靠度和质量。
因此，需要高密度的覆晶封装和用于高密度的覆晶封装的印刷电路板(PCB)，以改善上述缺点。
发明内容
有鉴于此，本发明提供一种半导体封装及半导体封装基座的制造方法。
依据本发明一实施方式，提供了一种半导体封装，包括：导线，内嵌于基座中；导电结构，直接接触该导线；以及半导体装置，安置于该导线上方并且连接至该导电结构；其中，该导线作为该基座的互连导线，用于该半导体装置的输入/输出连接。
依据本发明一实施方式，提供了一种半导体封装基座的制造方法，包括：提供载板；在该载板上形成至少一个导线；在该载板上形成额外绝缘材料；以及在该额外绝缘材料上定义图案，其中该图案形成于该至少一个导线上；其中，该导线用于导电结构直接接合于其上，从而使得该导线通过该导电结构与半导体装置连接，该导线作为该基座的互连导线，用于该半导体装置的输入/输出连接。
本发明所提出的半导体封装及半导体封装基座的制造方法，可改善产品的可靠度和质量。
附图说明
图1-4为根据本发明实施方式的半导体封装的剖面图。
图5a-5e为根据本发明实施方式的半导体封装的基座的制造方法的剖面图。
图6a-6e为根据本发明另一实施方式的半导体封装的制造方法的剖面图。
具体实施方式
为了让本发明的目的、特征、及优点能更明显易懂，下文特举较佳的实施方式并配合所附附图做详细的说明。本发明说明书提供不同的实施方式来说明本发明不同实施方式的技术特征。其中，实施方式中的各装置的配置仅用于解释本发明的目的，并非用以限制本发明。为了简化说明，附图中的标号部分重复，然而这种标号部分的重复并不能说明不同实施方式之间的关联性。
图1-4为根据本发明实施方式的半导体封装的剖面图。在此实施方式中，上述半导体封装可为覆晶封装体(flip chip package)，该覆晶封装体使用导电结构(例如铜柱状凸块(copper pillar bump))以将半导体装置连接至基座，其中该导电结构接触该导线。在本发明的另一个实施方式中，上述半导体封装可为使用接合线技术的封装，以将半导体装置连接至基座。举例来说，该半导体装置可通过导电结构安置(mounted)于导线上。图1显示本发明实施方式的半导体封装500a的剖面示意图。请参考图1，上述半导体封装500a可包括基座200，上述基座200具有装置贴附面(device attach surface)214。在本发明的实施方式中，基座200，例如为印刷电路板(print circuit board，PCB)，可由聚丙烯(polypropylene，PP)来形成。请注意基座200可为单一层(single layer)结构或多层(multilayer)结构。多个导线202a，内嵌于基座200中。在本发明的实施方式中，导线202a可包括信号线部分(segment)或接地线部分，上述信号线或接地线可用于半导体装置300的输入/输出(input/output，I/O)连接，其中半导体装置300直接安置(mounted)于基座200之上。因此，每一个导线202a具有作为基座200的垫区的部分。在此实施方式中，导线202a的宽度W1设计为大于5μm。然而，应注意导线的宽度W1并无限制。对于不同的设计，如果有需要的话，导线的宽度W1可以小于5μm。
半导体装置300可通过接合工艺用面向基座200的主动表面(active surface)安置于基座200的装置贴附面214上。在本发明的一个实施方式中，半导体装置300可包括芯片(die)、被动组件(passive component)、封装(package)或晶圆级封装(wafer levelpackage)。在此实施方式中，半导体装置300可为覆晶封装体(flip chip package)。半导体装置300的电路设置于上述主动表面上，且金属焊垫304设置于上述电路的顶部上。上述半导体装置300的上述电路通过设置于半导体装置300的主动表面上的多个导电结构222互连至基座200的电路。然而，应注意，如图1所示的导电结构222仅为实施方式，而并非用以限定本发明。
如图1所示，半导体装置300可包括半导体主体301，位于上述半导体主体301上(overlying)的金属焊垫304，以及覆盖金属焊垫304的绝缘层302。在此实施方式中，半导体主体301可包括但不限于半导体基板、形成于上述半导体基板的主要表面(main surface)上的电路装置、层间介电层(inter-layer dielectric layers,ILD layers)和互连结构。在本发明的一个实施方式中，上述互连结构可包括多个金属层、与金属层交错堆叠(laminate)的多个介电层，以及穿过位于半导体基板上的该多个介电层的多个通孔插塞(via)。上述金属焊垫304可包括上述互连结构的上述金属层的最上层金属层。在本发明的一个实施方式中，绝缘层302可以为单一层结构或多层结构，以及绝缘层302可包括但不限于氮化硅、氧化硅、氮氧化硅、聚酰亚胺(polyimide)或上述任意组合。并且，绝缘层302可具有应力缓冲和绝缘的功能。在本发明的一个实施方式中，金属焊垫304可包括但不限于铝、铜或上述合金。可于绝缘层302中形成多个开口。每一个开口暴露出金属焊垫304的至少一个部分。
如图1所示，导电结构222可包括导电凸块结构(例如铜凸块结构或焊锡凸块结构)、导线结构，或导电性糊剂结构(conductive paste structure)。在此实施方式中，导电结构222可为由金属堆叠(stack)构成的铜凸块结构，上述金属堆叠包括凸块下金属层(under bump metallurgy(UBM)layer)306、铜层216(例如电镀铜层)和焊锡盖层(soldercap)220。上述金属堆叠可进一步包括导电缓冲层218，其中导电缓冲层218位于铜层216和焊锡盖层220之间。在本发明的一个实施方式中，可利用例如溅镀(sputtering)法或电镀(plating)法的沉积工艺以及后续的各向异性蚀刻工艺(anisotropic etching process)，在开口中暴露出来的金属焊垫304上形成凸块下金属层(UBM layer)306。上述各向异性蚀刻工艺于形成导电柱状物之后进行。凸块下金属层306也可延伸于绝缘层302的顶面上。在此实施方式中，凸块下金属层306可包括钛、铜或上述组合。铜层216(例如电镀铜层)，可形成于凸块下金属层306上。开口可利用铜层216和凸块下金属层306填充，且位于开口内的铜层216和凸块下金属层306可形成导电结构222的集成插塞(integral plug)。铜层216的形成位置(图未显示)可利用干膜抗蚀剂(dry film photoresist)图型(pattern)或液体光刻胶(liquid photoresist)图型来定义。
可通过电镀焊锡和图案化光刻胶层或通过网印(screen printing)工艺和后续的回焊工艺于铜层216上形成焊锡盖层220。可利用电镀法于铜层216和焊锡盖层220之间形成由镍形成的导电缓冲层218。上述导电缓冲层218可作为形成于其上的焊锡盖层220的种晶层(seed layer)、黏着层(adhesion layer)以及障碍层(barrier layer)。在本发明的一个实施方式中，导电结构222(例如为导电柱状结构)可作为金属焊垫304的焊点(solderjoint)，而金属焊垫304用于传输形成于其上的半导体装置300的输入/输出(I/O)信号、接地(ground)信号或电源(power)信号。因此，导电结构222的铜层216可帮助增加凸块结构的机械强度。在本发明的一个实施方式中，可以在半导体装置300和基座200之间的间隙中导入底胶填充材料或底胶230。在本发明的一个实施方式中，底胶填充材料或底胶230可包括毛细填充胶(capillary underfill，CUF)、成型底部填充胶(molded underfill，MUF)、非导电性绝缘胶(nonconductive paste，NCP)、非导电性绝缘膜(nonconductive film，NCF)或上述任意组合。
在本发明的一个实施方式中，导线具有顶面，上述顶面可位于上述基座的表面的上方、下方或对齐上述基座的表面，以改善高密度半导体封装的绕线能力。如图1所示，导线202a的顶面212a设置于上述基座200的装置贴附面214的下方。即导线202a的底面206a和导线202a的至少一个部分侧壁204a设计连接至基座200。在此实施方式中，导电结构222连接基座200的至少一个部分。举例来说，导电结构222的焊锡盖层220设置为与基座200的一部分接触。进一步地，导电结构222可仅连接至导线202a的一顶面212a。由于导线的顶面凹陷于基座200的装置贴附面214内，所以会增加凸块接合至导线的空间(bump-to-tracespace)，且有效地避免凸块接合至导线的桥接问题(the problem of bump-to-tracebridging)。
图2显示本发明另一实施方式的半导体封装500b的剖面示意图。上述图式中的各装置如有与图1所示相同或相似的部分，则可参考前面的相关叙述，在此不做重复说明。在此实施方式中，内嵌于基座200中的半导体封装500b的导线202b可具有顶面212b，上述顶面212b设计为对齐于基座200的装置贴附面214，以改善用于高密度半导体封装的绕线能力。即导线202b的底面206b和侧壁204b设计为完全连接至基座200。因此，导电结构222的焊锡盖层220设置于基座200的装置贴附面214上，且仅接触至导线202b的顶面212b。
图3显示本发明又一实施方式的半导体封装500c的剖面示意图。上述图式中的各装置如有与图1和图2所示相同或相似的部分，则可参考前面的相关叙述，在此不做重复说明。在此实施方式中，内嵌于基座200中的半导体封装500c的导线202c可具有顶面212c，上述顶面212c设计为位于基座200的装置贴附面214的上方，以改善用于高密度半导体封装的绕线能力。即导线202c的底面206c和导线202c的仅一部分侧壁204c设计连接至基座200。在此实施方式中，导电结构222的焊锡盖层220设置于基座200的装置贴附面214上，且包裹导线202c的顶面212c和仅包裹导线202c一部分侧壁204c。
图4显示本发明又另一实施方式的半导体封装500d的剖面示意图。上述图式中的各装置如有与图1-3所示相同或相似的部分，则可参考前面的相关叙述，在此不做重复说明。在本发明的一个实施方式中，上述基座可包括如图1-3所示的单一层结构。在本发明的另一个实施方式中，上述基座可包括多层结构。在此实施方式中，内嵌于基座部分200a中的半导体封装500d的导线202d可具有顶面212d，上述顶面212d设计对齐于基座部分200a的装置贴附面214，以改善用于高密度半导体封装的绕线能力。即导线202d的底面206d和侧壁204d设计为连接至基座部分200a。并且具有开口210的绝缘层208设置于基座部分200a上。上述绝缘层208设置于基座部分200a的装置贴附面214的上方。在此实施方式中，基座部分200a和绝缘层208可一起作为多层基座。如图4所示，导线202d从开口210中暴露出来。因此，导电结构222的焊锡盖层220是穿过绝缘层208的一部分而形成的，且仅接触至导线202d的顶面212d。应注意，绝缘层208不需对齐于导线202d的侧壁204d。绝缘层208可以位于如图4所示的导线202d的侧壁204d的外侧或内侧。
图5a-5e为根据本发明实施方式的半导体封装的基座(即第一基座200c和第二基座200d)的制造方法的剖面图。在此实施方式中，半导体封装的基座的制造方法也可称为双侧基座制造工艺(double-sided base fabricating process)。实施方式中的各装置如有与图1-4所示相同或相似的部分，则可参考前面的相关叙述，在此不做重复说明。如图5a所示，提供一载板400，上述载板400的顶面401和底面403上具有导电种晶层(conductiveseed layer)402a和导电种晶层402b。在本发明的一个实施方式中，载板400可包括FR4环氧玻璃(FR4glass epoxy)或不锈钢(stainless steel)。并且，导电种晶层402a和导电种晶层402b做为种晶层以用于后续形成的位于上述载板400的顶面401和底面403上的基座的互连导线。在本发明的一个实施方式中，导电种晶层402a和导电种晶层402b可包括铜。
接着，如图5b所示，分别于载板400的顶面401和底面403上形成第一导线404a和第一导线404b，即分别于导电种晶层402a和导电种晶层402b上形成第一导线404a和第一导线404b。第一导线404a和第一导线404b的底部连接至导电种晶层402a和导电种晶层402b的顶部。在本发明的一个实施方式中，可利用电镀工艺(plating process)和各向异性蚀刻工艺形成第一导线404a和第一导线404b。上述电镀工艺和各向异性蚀刻工艺同时于上述载板400的顶面401和底面403进行。在本发明的一个实施方式中，电镀工艺可包括有电电镀工艺(electrical plating process)。在本发明的一个实施方式中，第一导线404a和第一导线404b可包括铜。在本发明的一个实施方式中，第一导线404a和第一导线404b的宽度可设计大于5μm。然而，应注意导线的宽度并无限制。对于不同的设计，如果有需要的话，导线的宽度可以小于5μm。在此实施方式中，上述各向异性蚀刻工艺可精确地控制第一导线404a和404b的宽度。
接着，如图5c所示，进行堆叠工艺，将第一基座材料层406a和第二基座材料层406b分别堆叠于载板400的顶面401和底面403上，即将第一基座材料层406a和第二基座材料层406b分别堆叠于导电种晶层402a和导电种晶层402b上，其中第一基座材料层406a和第二基座材料层406b分别覆盖第一导线404a和第一导线404b。在此实施方式中，同时于上述载板400的顶面401和底面403上进行第一基座材料层406a和第二基座材料层406b的堆叠工艺。在本发明的一个实施方式中，第一基座材料层406a和第二基座材料层406b可包括聚丙烯(polypropylene，PP)。
接着，请再参考图5c，进行钻孔工艺，以形成穿过第一基座材料层406a和第二基座材料层406b的开口(图未显示)，以定义后续形成的通孔插塞408a和通孔插塞408b的位置。在本发明的一个实施方式中，上述钻孔工艺包括激光钻孔工艺、蚀刻钻孔工艺或机械钻孔工艺。接着，进行电镀工艺，将导电材料填入上述开口中，以形成通孔插塞408a和通孔插塞408b，其中上述通孔插塞408a和通孔插塞408b将第一导线404a和第一导线404b互连至后续形成的第二导线410a和第二导线410b。在此实施方式中，上述钻孔工艺和电镀工艺同时且分别于上述第一基座材料层406a和第二基座材料层406b上进行。
接着，请再参考图5c，分别于上述第一基座材料层406a的第一表面412上和第二基座材料层406b的第一表面414上形成多个第二导线410a～410b。如图5c所示，上述第一基座材料层406a的第一表面412和第二基座材料层406b的第一表面414分别远离上述载板400的顶面401和底面403。可利用电镀工艺和各向异性蚀刻工艺形成第二导线410a和第二导线410b。上述电镀工艺和各向异性蚀刻工艺同时于上述第一基座材料层406a的第一表面412上和第二基座材料层406b的第一表面414上进行。在本发明的一个实施方式中，电镀工艺可包括有电电镀工艺。在本发明的一个实施方式中，第二导线410a和第二导线410b可包括铜。在本发明的一个实施方式中，第二导线410a和第二导线410b的宽度可设计为大于5μm。然而，应注意导线的宽度并无限制。对于不同的设计，如果有需要的话，导线的宽度可以小于5μm。在此实施方式中，上述各向异性蚀刻工艺可精确地控制第二导线410a和第二导线410b的宽度。
接着，如图5d和图5e所示，将带有第一导线404a和第二导线410a的第一基座材料层406a以及带有该第一导线404b和该第二导线410b的第二基座材料层406b分别从如图5c所示的上述载板400的顶面401和底面403分离，以形成彼此分离的第一基座200c和第二基座200d。接着，请再参考第5d和5e图，分别从第一基座200c的第二表面416和第二基座200d的第二表面418上移除导电种晶层402a和导电种晶层402b。
如图5d和图5e所示，第一导线404a和第一导线404b对齐于第一基座200c的第二表面416和第二基座200d的第二表面418，其中第二表面416和第二表面418分别相对于第一表面412和第一表面414。在此实施方式中，利用双侧基座制造工艺(double-sided basefabricating process)，同时于相对表面上制造第一基座200c和第二基座200d。
在本发明的另一个实施方式中，分离如图5d和图5e所示的第一基座200c和第二基座200d之后，可选择性分别于第一基座200c的第二表面416上和第二基座200d的第二表面418上形成具有开口的两个保护层(passivation layer)或绝缘层(图未示)。在此实施方式中，第一基座200c和第二基座200d的第一导线404a和第一导线404b从开口中暴露出来。具有开口的绝缘层以及如图5d/图5e所示的第一导线404a/第一导线404b可类似于如图4所示的具有开口的绝缘层208以及导线202d。并且，在此实施方式中，第一基座200c/第二基座200d和其上的绝缘层可一起作为多层基座(multilayer base)。
图6a-6e为根据本发明另一实施方式的半导体封装的制造方法的剖面图。并且，图6e显示本发明另一实施方式的半导体封装500e的剖面图。上述图式中的各装置如有与图1-4、图5a-5e所示相同或相似的部分，则可参考前面的相关叙述，在此不做重复说明。在本发明的另一个实施方式中，上述基座可具有多层结构。如图6a所示，提供具有顶面451的基座450。接着，如图6b所示，在上述基座450的顶面451上形成至少一个导线454。在本发明的一个实施方式中，可利用电镀工艺和各向异性蚀刻工艺形成导线454。在本发明的一个实施方式中，电镀工艺可包括有电电镀工艺。在本发明的一个实施方式中，导线454可包括铜。在本发明的一个实施方式中，导线454的宽度可设计大于5μm。然而，应注意导线的宽度并无限制。对于不同的设计，如果有需要的话，导线的宽度可以小于5μm。在此实施方式中，上述各向异性蚀刻工艺可精确地控制导线454的宽度。
接着，如图6c所示，进行堆叠工艺，在上述基座450的顶面451上设置额外绝缘材料456。并且，上述额外绝缘材料456覆盖导线454的顶面460和侧壁462。
接着，请参考图6d，进行钻孔工艺，以形成穿过上述额外绝缘材料456的至少一个开口458，以定义后续形成的导电结构的位置，上述导电结构例如可为铜凸块结构或焊锡凸块结构。在本发明的一个实施方式中，上述钻孔工艺包括激光钻孔工艺、蚀刻钻孔工艺或机械钻孔工艺。在此实施方式中，导线454的顶面460会从上述额外绝缘材料456的开口458中暴露出来。
接着，请参考图6e，进行接合工艺，将半导体装置300通过导电结构222安置于基座450。上述图式中的半导体装置300和导电结构222的装置如有与图1-4所示相同或相似的部分，则可参考前面的相关叙述，在此不做重复说明。进行接合工艺之后，导电结构222设置穿过上述额外绝缘材料456的开口458，且仅接触至导线454的顶面460。接着，可于半导体装置300和上述额外绝缘材料456之间的间隙中导入底胶填充材料或底胶230。在本发明的一个实施方式中，底胶填充材料或底胶230可包括毛细底胶填充材料(capillary underfill，CUF)、成型底胶填充材料(molded underfill，MUF)，非导电性绝缘胶(nonconductivepaste，NCP)、非导电性绝缘膜(nonconductive film，NCF)或上述任意组合。最后，上述基座450、上述额外绝缘材料456、上述半导体装置300、上述导线454和上述导电结构222一起形成半导体封装500e。
本发明实施方式提供一种半导体封装。上述半导体封装设计包括内嵌于基座(例如为印刷电路板(PCB))中的导线。上述导线具有顶面，上述顶面可位于上述基座的表面的上方、下方或对齐上述基座的表面，以改善用于高密度半导体封装的绕线能力。并且，上述导线的宽度可设计大于5μm。再者，上述基座可包括单一层结构或多层结构。本发明实施方式也提供一种用于半导体封装的基座的制造方法。在本发明的一个实施方式中，上述方法可同时于载板的两侧制造两个基座。并且，导线内嵌于上述基座中。再者，可利用电镀工艺和各向异性蚀刻工艺形成导线，且上述各向异性蚀刻工艺可精确地控制上述导线的宽度。在本发明的另一个实施方式中，上述方法可制造包括单一层结构或多层结构的基座，以增加设计选择。在本发明的另一个实施方式中，上述方法包括提供载板；在载板上形成至少一个导线；在载板上形成额外绝缘材料；以及于额外绝缘材料上定义图案，其中该图案形成于该至少一个导线上。
虽然本发明以较佳实施方式揭露如上，然而此较佳实施方式并非用以限定本发明，本领域技术人员不脱离本发明的精神和范围内，凡依本发明申请专利范围所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (16)

1.一种半导体封装，其特征在于，包括：
导线，内嵌于基座中，其中该基座具有装置贴附面，并且该导线的顶面位于该基座的该装置贴附面的下方或者对齐该装置贴附面；
导电结构，直接接触该导线的顶面的整个宽度，并且该导电结构接触该基座的该装置贴附面的一部分；以及
半导体装置，安置于该导线上方并且连接至该导电结构，从而通过该导电结构安装于该基座的该装置贴附面上；
其中，该导线作为该基座的互连导线，用于该半导体装置的输入/输出连接。
2.根据权利要求1所述的半导体封装，其特征在于，该导线的宽度大于5μm。
3.根据权利要求1所述的半导体封装，其特征在于，进一步包括：
绝缘层，具有开口，该绝缘层设置于该基座上且位于该基座的装置贴附面的上方，其中该导线从该开口中暴露出来。
4.根据权利要求1所述的半导体封装，其特征在于，其特征在于，该导线的顶面具有作为该基座的垫区的一部分，用于接触该导电结构；并且该基座覆盖该导线的整个底面。
5.一种半导体封装，其特征在于，包括：
基座，具有装置贴附面；
导线，内嵌于该基座中，并且该导线的顶面位于该基座的该装置贴附面的下方或者对齐该装置贴附面；
绝缘层，设置于该基座的该装置贴附面的上，该绝缘层具有开口，用于暴露该导线；
导电结构，直接接触该导线的顶面的整个宽度，以及填满该绝缘层的该开口；以及
半导体装置，安置于该导线上方并且连接至该导电结构，从而通过该导电结构安装于该基座的该装置贴附面上；
其中，该导线作为该基座的互连导线，用于该半导体装置的输入/输出连接。
6.如权利要求5所述的半导体封装，其特征在于，该导电结构还接触该绝缘层的顶面。
7.一种半导体封装，其特征在于，包括：
基座；
导线，嵌入于该基座内，其中该导线的顶面位于该基座的顶面的下方或者对齐该基座的顶面；以及
半导体装置，通过导电结构安置在该导线上，其中该导电结构直接接触该导线的顶面的整个宽度，并且该导电结构还接触该基座的顶面。
8.如权利要求7所述的半导体封装，其特征在于，该导线的顶面和该导线的底面具有相同的宽度。
9.如权利要求7所述的半导体封装，其特征在于，该导线为单层。
10.如权利要求7所述的半导体封装，其特征在于，该半导体装置包括：主体，具有第一表面、位于该第一表面上的金属焊垫，以及绝缘层，覆盖该主体的该第一表面的至少一部分以及该金属焊垫的一部分，其中该金属焊垫的从该绝缘层露出的部分通过该导电结构安置在该导线上。
11.如权利要求7所述的半导体封装，其特征在于，该导电结构包括：导电凸块结构，该导电凸块结构包括：凸块下金属层、铜层、焊锡盖层和位于该铜层和该焊锡盖层之间的导电缓冲层。
12.如权利要求11所述的半导体封装，其特征在于，该凸块下金属层接触该金属焊垫的露出的部分，并且该焊锡盖层接触该基座的顶面的至少一部分，以及该导线的顶面。
13.如权利要求7所述的半导体封装，其特征在于，该基座为印刷电路板。
14.如权利要求7所述的半导体封装，其特征在于，进一步包括：底胶填充材料，位于该半导体装置和该基座之间。
15.如权利要求14所述的半导体封装，其特征在于，该底胶填充材料包括：毛细填充胶、成型底部填充胶、非导电性绝缘胶、非导电性绝缘膜或上述任意组合。
16.如权利要求7所述的半导体封装，其特征在于，该导线的材料为铜。
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