CN101517744A - 用于深亚微米制造工艺的对称双极结型晶体管 - Google Patents

用于深亚微米制造工艺的对称双极结型晶体管 Download PDF

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CN101517744A
CN101517744A CNA2007800346830A CN200780034683A CN101517744A CN 101517744 A CN101517744 A CN 101517744A CN A2007800346830 A CNA2007800346830 A CN A2007800346830A CN 200780034683 A CN200780034683 A CN 200780034683A CN 101517744 A CN101517744 A CN 101517744A
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K·E·阿兰德特
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Abstract

本文所述的是双极结型晶体管及其制造方法的实施例，该晶体管包括：多个基极端子环，且在多个基极端子环中的任意两个基极端子环之间具有发射极端子环；以及围绕多个基极端子环和发射极端子环的集电极端子环。

Description

用于深亚微米制造工艺的对称双极结型晶体管
发明背景
技术领域
本发明涉及半导体器件领域，更具体地涉及双极结型晶体管结构及其制造方法。
相关领域讨论
在双极结型晶体管(BJT)设计中，为了确保最佳的器件性能和器件间最优匹配器件对称性要求是必需的。相连接器件之间合适的匹配，允许使用平均技术(averaging techniques)来消除由制造工艺导致的线性和非线性的梯度(gradients)。通过安排交替扩散类型的条形或矩形构成双极结型晶体管，来将平均技术应用于双极结型晶体管。利用对称性，能够实现进一步的改进。这种平均技术使得双极结型晶体管能用于高精度电路中，诸如带隙基准电压电路、热传感器和管芯上的热校准器件。在传统的双极结型晶体管设计中，为了维持对称性，发射极端子典型地绘制为方形，且基极端子围绕该发射极端子。此外，传统的双极结型晶体管也包括典型地环绕发射极端子的集电极端子。
由于在集成电路设计中生产更小器件的推动力不断持续，生产更小的器件的结果带来了新的影响特定器件的工作特性的设计约束。尽管这些设计约束对某些器件的工作特性有不利影响，但是在整个半导体器件制造工艺中，这些设计约束是确保均一性所必需的。在高量产制造中尤其是在深亚微米半导体制造工艺中，制造工艺的均一性有助于确保高的成品率。为了确保在半导体制造工艺中的均一性，一些设计约束限制了诸如双极结型晶体管之类的器件的物理尺寸。例如，在深亚微米制造工艺中，对给定器件的掩模上绘制的特定尺寸的限制是必需的，用以确保所制造集成电路的高成品率和可靠性。在一些工艺中，限制了扩散区的最大宽度尺寸。
因为双极结型晶体管需要一定的面积用于特定的偏流(bias current)以确保所需的工作特性，扩散区的受限宽度迫使器件的长度大于宽度。因此，在半导体电路设计中使用的具有方形发射极端子的传统的方形双极结型晶体管必需调整以符合最大宽度尺寸。当符合最大宽度尺寸时，为了维持高效运作所需的面积具有方形发射极端子的传统双极结型晶体管的长度必须比宽度更长。现在双极结型晶体管的形状采用矩形的形状。矩形双极结型晶体管的非对称形状改变了晶体管的特性，降低了晶体管工作特性和其它器件之间的晶体管的匹配特性。
发明概要
本文所述的是一种双极结型晶体管及其制造方法的实施例，该晶体管包括：的多个基极端子环，且多个基极端子环中的任意两个基极端子环之间有一发射极端子环；以及围绕多个基极端子环和发射极端子环的集电极端子环。
附图说明
图1示出环形双极结型晶体管的实施例的俯视图。
图2示出环形双极结型晶体管的实施例的横截面图。
图3示出环形双极结型晶体管的实施例的俯视图。
图4示出了环形双极结型晶体管的实施例的阵列。
图5A-5H示出了根据一个实施例的制造环形双极结型晶体管的实施例的方法。
具体实施方式
在以下的描述中，阐述了大量的具体细节用以提供权利要求的理解。本领域的技术人员将会理解实施本公开并不必需这些具体细节。在其它实例中，公知的半导体制造工艺和技术并没有详细的阐明以免不必要地混淆本发明的实施例。
本发明的实施例包括双极结型晶体管(BJT)的设计及其制造工艺，其保留了双极结型晶体管的对称性，同时遵循对包括在X或Y任一方向上扩散区最大尺寸的限制的设计约束。该设计使用环形几何形状来保留双极结型晶体管的对称性，同时遵循半导体制造工艺的设计约束，如最大扩散宽度尺寸。图1示出了包括由扩散区所限定的两个基极端子环105，发射极端子环110以及集电极端子环115的环形双极结型晶体管100的实施例。
尽管设计约束限制了扩散区的最大尺寸，但环形几何形状使得环形双极结型晶体管100的面积和周长能相互独立地确定尺寸。例如，当环形双极结型晶体管100被设计为具有方形形状的基极端子环、发射极端子环和集电极端子环时，可在允许的最小和最大尺寸之间调节宽度连同方形环的长度，以调节晶体管的面积周长比。对环形双极结型晶体管100的一实施例来说，可将尺寸设计成使得晶体管的面积周长比为1/2。
环形双极结型晶体管100的对称性给予双极结型晶体优化的器件特性，诸如比非对称的矩形几何形状更好的器件间的相关匹配。此外，环形双极结型晶体管100的对称性允许在任何方向上旋转晶体管，而不会显著影响环形双极结型晶体管100的工作特性。因为工作特性并不依赖于器件的朝向，这就为在半导体管芯上放置环形双极结型晶体管100提供了更多的灵活性。
此外，与传统的方形和矩形的双极结型晶体管几何形状相比，环形布局减小了寄生基极电阻。对于环形双极结型晶体管100的一实施例来说，多个基极端子环105的使用增加了电子或空穴来自或去向发射极端子环110的路径。因为路径的数目增加，所以发射极与基极之间的电阻就减小。这种寄生基极电阻的减小向环形双极结型晶体管100提供了超越传统几何形状的改进的器件特性。环形双极结型晶体管100的减小的寄生基极电阻的一个好处包括提升的电流增益因数。对于环形双极结型晶体管100的一实施例来说，寄生基极电阻被减小了传统双极结型晶体管的值的1/2。相似地，对于诸如图3所示实施例的环形双极结型晶体管的一实施例来说，当添加附加环时，寄生基极电阻减小。拓展本方法导致寄生基极电阻和电流因数的平均效果。环形双极结型晶体管内的平均效果导致诸如图4所示实施例的排列成阵列的数个“单位”双极结型晶体管之间的相关匹配度提升。
环形双极结型晶体管100的各实施例的相关匹配特性和减小的基极电阻使得晶体管非常适用于精密二极管电路。对用作精密二极管的环形双极结型晶体管100的实施例来说，基极端子环110和集电极端子环115被连接在一起。这种二极管构造然后能够在诸如带隙基准电压的电路中使用。此外，各实施例的相关匹配特性和减小的基极电阻使得环形双极结型晶体管100能理想地用于诸如提取芯片绝对结温的热传感器的热感测电路。以上环形双极结型晶体管100的实施例的使用仅作为示例而不是限制提供。
图1示出了双极结型晶体管的环状布局的实施例。图1的实施例包括两个基极端子环105和在两个基极端子环105之间的发射极端子环110。此外，图1的实施例还包括环绕发射极端子环110和基极端子环105的集电极端子环115。基极端子环105、发射极端子环110以及集电极端子环115的环可形成任意对称的几何形状。对于一实施例来说，基极端子环105、发射极端子环110和集电极端子环115形成方形形状。另一实施例包括形成圆形形状的基极端子环105、发射极端子环110和集电极端子环115。
对于一实施例来说，内部的基极端子环105在浅槽隔离(STI)区101周围形成。此外，各实施例可包括在发射极端子环110和每个基极端子环105之间的浅槽隔离区101。相似地，各实施例还可包括在集电极端子环115和基极端子环105之间的浅槽隔离区101。对于包括浅槽隔离区101的实施例，基于扩散宽度的设计约束，基极端子环105、发射极端子环110和集电极端子环115的宽度被绘制成相同用以确保给定的深亚微米制造工艺的均一性。对于一实施例，基极端子环105、发射极端子环110和集电极端子环115的宽度全部为1微米。另一包括浅槽隔离区101的实施例，基极端子环105、发射极端子环110和集电极端子环115的宽度被绘制成使得基极端子环105、发射极端子环110和集电极端子环115并不都被绘制成相同的宽度。
图2示出具有形成于衬底205内的阱201中的基极端子环105和发射极端子环110的环形双极结型晶体管的横截面视图。对于环形双极结型晶体管100的PNP实施例，掺杂阱201以在P型衬底中形成N阱，。对于环形双极结型晶体管100的NPN实施例来说，掺杂阱201以在N型衬底中形成P阱。对于一实施例，将阱201掺杂成具有1×1016-1×1019原子/cm3的浓度。环形双极结型晶体管100的实施例包括深度范围为从0.05微米到0.25微米的阱201。实施例包括深度为0.1微米的阱201。
此外，图2实施例包括生成基极端子环105、发射极端子环110和集电极端子环115的扩散区。对于PNP实施例，基极端子环105由N+掺杂扩散区形成，而发射极端子环110和集电极端子环115由P+掺杂扩散区形成。对于NPN实施例，基极端子环105由P+掺杂扩散区形成，而发射极端子环110和集电极端子环115由N+掺杂扩散区形成。对于一些NPN和PNP型实施例，基极端子环105、发射极端子环110和集电极端子环115的扩散区被掺杂成具有1×1019-1×1021原子/cm3的浓度。
根据本发明的双极结型晶体管的实施例可包括数个基极端子环105和数个发射极端子环110。在图3所示的这样一个实施例中，环形双极结型晶体管100包括被集电极端子环115围绕的三个基极端子环105和两个发射极端子环110。因此，只要发射极端子环110围绕基极端子环105同时又被基极端子环105所包括，集电极端子环115可围绕任意数量的发射极端子环110和基极端子环105。
图4示出环形双极结型晶体管100的阵列的实施例。在环形双极结型晶体管100的阵列的实施例中，阵列的数个环形双极晶体管100可并联连接以作为单个晶体管来运行。环形双极结型晶体管100的对称性质提供在其它环形双极晶体管100之间的匹配特性，该匹配特性允许平均技术消除由制造工艺所导致的线性和非线性的梯度。环形双极结型晶体管100的阵列的实施例包括将晶体管连接成阵列，以使用诸如公共矩心布局的平均技术。形成阵列的环形双极结型晶体管100的各实施例可形成包括任意数量的环形双极结型晶体管100的阵列。例如，形成阵列的环形双极结型晶体管100实施例包括环形双极结型晶体管100的三乘三、十乘十、或者十六乘十六阵列。
图5A至5H示出了环形双极结型晶体管100的实施例的形成。对于一实施例，如图5A所示，形成衬底501，并在衬底501之上形成第一掩模层505。对于PNP实施例，衬底501是P型衬底。或者，对于NPN实施例，衬底501是N型衬底。第一掩模层505可以是任何公知的适于限定阱510的材料。对于一实施例，第一掩模层505是光刻限定的光刻胶。对于另一实施例，第一掩模层505由被光刻限定而后又被蚀刻的电介质材料形成。对于特定的实施例，第一掩模层505可是各种材料的复合层叠。第一掩模层505被图案化以限定衬底501中将添加杂质以形成阱510的区域。图5B示出在衬底501中通过诸如离子注入或热扩散的方法添加杂质以形成阱510的实施例。对于一实施例，当在p型衬底501中用N+掺杂剂掺杂以形成N阱时，形成阱510。另一实施例包括在n型衬底501中使用P型掺杂剂以形成P阱。
在阱510形成后，第一掩模层505被去除。对于一实施例，使用干法蚀刻去除第一掩模层505。对于另一实施例，使用湿法蚀刻去除第一掩模层505。一旦第一掩模层505被去除，一实施例包括在衬底501和阱510上形成并图案化的第二掩模层515。第二掩模层515用来限定浅槽隔离(STI)区517。如图5C中所示，由第二掩模层515暴露所剩的区域被蚀刻成沟槽。对于一实施例，沟槽被蚀刻以形成阱510一半深度的浅槽隔离(STI)区517。对于一实施例，可使用各向异性等离子体蚀刻来蚀刻沟槽。然后用电介质材料填充沟槽。对于一实施例，通过覆盖沉积氧化物，例如，使用高密度等离子体(HDP)化学沉积工艺，填充沟槽。沉积工艺也将在图案化的第二掩模层515的上表面上形成电介质。然后，抛光电介质材料使得电介质材料的上端形成大致与阱510和衬底501相平的浅槽隔离层517，如图5D中所示。氧化物的抛光可使用任意的抛光技术来实现，包括化学的，机械的，或者电机的抛光技术。
图5E示出形成并图案化用于限定环形双极结型晶体管100的基极区525的第三掩模层520。一旦图案化了第三掩模层520，掺杂所暴露的区域以在阱510中生成基极区525，以形成环形双极结型晶体管100的一实施例的基极端子环105，如图5F所示。对于PNP实施例，诸如磷、砷、锑的N型掺杂剂被用来形成N+基极区525。对于NPN实施例，诸如硼的P型掺杂剂被用来在阱510中形成P+基极区525，该阱510是在n型衬底501中用p型掺杂剂掺杂的。掺杂可使用任意的掺杂技术来完成包括热扩散和离子注入。然后，使用与先前讨论的去除其它掩模层的技术相似的蚀刻技术来去除第三掩模层520。如图5G中所示，形成并图案化第四掩模层530以限定环形双极结型晶体管100的发射极区535和集电极区540。然后掺杂由第四掩模层530暴露所剩的区域。对于PNP实施例，使用P型掺杂剂来形成P+发射极区535和集电极区540。对于NPN实施例，使用N型掺杂剂来形成N+发射极区535和集电极区540。对于实施例，一旦形成了发射极区535和集电极区540，就去除第四掩模层530以形成其横截面如图5H所示的环形双极结型晶体管100的实施例。此时所有余下的事项是形成器件互连。
虽然以具体到结构特征和方法行为的语言描述了本发明的实施例，但应理解的是在附加权利要求所限定的本发明的实施例并不需限于所述特定的特征和行为。相反，所公开的特定的特征和行为作为所声明的发明的优选实现。

Claims (20)

1.一种双极结型晶体管，包括：
多个基极端子环，且在所述多个基极端子环的任两个基极端子环之间具有发射极端子环；以及
围绕所述多个基极端子环和所述发射极端子环的集电极端子环。
2.如权利要求1所述的双极结型晶体管，其特征在于，所述多个基极端子环在N阱中形成，且在所述多个基极端子环的任两个基极端子环之间具有发射极端子环。
3.如权利要求2所述的双极结型晶体管，其特征在于，所述多个基极端子环是N+掺杂区，而所述发射极端子环是P+掺杂区。
4.如权利要求2所述的双极结型晶体管，其特征在于，所述多个基极端子环、所述发射极端子环和所述集电极端子环由浅槽隔离区分隔开。
5.如权利要求1所述的双极结型晶体管，其特征在于，所述双极结型晶体管是双极结型晶体管阵列的一部分。
6.如权利要求5所述的双极结型晶体管，其特征在于，所述双极结型晶体管的阵列是选自于由带隙基准电压电路、热传感器和管芯上热校准器件组成的组的部分电路。
7.如权利要求1所述的双极结型晶体管，其特征在于，所述多个基极端子环、所述发射极环和所述集电极环形成方形形状。
8.一种双极结型晶体管，包括：
第一基极端子环；
围绕所述第一基极端子环形成的发射极端子环；
围绕所述发射极端子环形成的第二基极端子环；以及
在所述第二基极端子环之外形成的集电极端子环。
9.如权利要求8所述的双极结型晶体管，其特征在于，所述第一基极端子环和所述第二基极端子环是N+掺杂区。
10.如权利要求8所述的双极结型晶体管，其特征在于，所述第一基极端子环、所述发射极端子环和所述第二基极端子环由浅槽隔离区分隔开。
11.如权利要求10所述的双极结型晶体管，其特征在于，所述第一基极端子环、所述发射极端子环和所述第二基极端子环形成方形形状。
12.如权利要求11所述的双极结型晶体管，其特征在于，所述双极晶体管是带隙基准电压电路的一部分。
13.权利要求11所述的双极结型晶体管，其特征在于，所述第一基极端子环、所述发射极端子环、所述第二基极端子环和所述集电极端子环的宽度是1微米。
14.如权利要求10所述的双极结型晶体管，其特征在于，所述第一基极端子环、所述发射极端子环和所述第二基极端子环在P阱中形成。
15.一种方法，包括，
在衬底内形成阱；
在所述阱内形成具有多个环的基极端子；
在所述多个环中的任意两个之间形成发射极端子环；以及
形成围绕所述基极端子环和所述发射极端子环的集电极端子环。
16.如权利要求15所述的方法，其特征在于，所述衬底是p型衬底而所述阱是N阱。
17.如权利要求15所述的方法，进一步包括，形成用以分隔开所述第一环、所述第二环、所述发射极端子环和所述集电极端子环的浅槽隔离区。
18.如权利要求17所述的方法，其特征在于，形成浅槽隔离区包括以所述阱的约一半深度形成浅槽隔离区。
19.如权利要求16所述的方法，其特征在于，形成所述发射极端子环和形成所述集电极端子环包括形成P+掺杂区。
20.如权利要求15所述的方法用于形成环形双极结型晶体管的阵列。
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CN103077966A (zh) * 2011-10-26 2013-05-01 索尼公司 半导体器件
CN103187438A (zh) * 2011-12-28 2013-07-03 台湾积体电路制造股份有限公司 鳍式bjt
US9368594B2 (en) 2011-12-28 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a fin-like BJT
CN108807515A (zh) * 2017-05-05 2018-11-13 联华电子股份有限公司 双极性晶体管
CN108807515B (zh) * 2017-05-05 2022-07-05 联华电子股份有限公司 双极性晶体管
CN108520896A (zh) * 2018-05-03 2018-09-11 西安建筑科技大学 一种耐压双极晶体管及其制作方法
CN108520896B (zh) * 2018-05-03 2021-01-01 西安建筑科技大学 一种耐压双极晶体管及其制作方法
CN111799327A (zh) * 2019-04-09 2020-10-20 深圳比亚迪微电子有限公司 半导体功率器件
CN111799327B (zh) * 2019-04-09 2024-04-12 比亚迪半导体股份有限公司 半导体功率器件
CN110828560A (zh) * 2019-11-14 2020-02-21 西安微电子技术研究所 一种基区环掺杂抗辐射横向pnp晶体管及制备方法

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DE112007002213B4 (de) 2013-12-05
CN101517744B (zh) 2012-07-18
JP5122574B2 (ja) 2013-01-16
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US20080087918A1 (en) 2008-04-17
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