JP2010503999A - ディープサブミクロン製造プロセスのための対称バイポーラ接合トランジスタ設計 - Google Patents
ディープサブミクロン製造プロセスのための対称バイポーラ接合トランジスタ設計 Download PDFInfo
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- JP2010503999A JP2010503999A JP2009529221A JP2009529221A JP2010503999A JP 2010503999 A JP2010503999 A JP 2010503999A JP 2009529221 A JP2009529221 A JP 2009529221A JP 2009529221 A JP2009529221 A JP 2009529221A JP 2010503999 A JP2010503999 A JP 2010503999A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 8
- 238000012935 Averaging Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
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Abstract
Description
Claims (20)
- 複数のベース端子リングであり、当該複数のベース端子リングのうちの如何なる2つのベース端子リングの間にもエミッタ端子リングを有する複数のベース端子リング;及び
前記複数のベース端子リング及び前記エミッタ端子リングを囲むコレクタ端子リング;
を有するバイポーラ接合トランジスタ。 - 如何なる2つのベース端子リングの間にもエミッタ端子リングを有する前記複数のベース端子リングは、Nウェル内に形成されている、請求項1に記載のバイポーラ接合トランジスタ。
- 前記複数のベース端子リングはN+ドープト領域であり、前記エミッタ端子リングはP+ドープト領域である、請求項2に記載のバイポーラ接合トランジスタ。
- 前記複数のベース端子リングと、前記エミッタ端子リングと、前記コレクタ端子リングとは、シャロー・トレンチ・アイソレーション領域によって分離されている、請求項2に記載のバイポーラ接合トランジスタ。
- 当該バイポーラ接合トランジスタはバイポーラ接合トランジスタアレイの一部である、請求項1に記載のバイポーラ接合トランジスタ。
- 前記バイポーラ接合トランジスタアレイは、バンドギャップ電圧基準、温度センサ、及びダイ上の温度校正デバイスからなる群から選択された部分回路である、請求項5に記載のバイポーラ接合トランジスタ。
- 前記複数のベース端子リング、前記エミッタ端子リング、及び前記コレクタ端子リングは正方形の形状を形成している、請求項1に記載のバイポーラ接合トランジスタ。
- 第1のベース端子リング;
前記第1のベース端子リングの周囲に形成されたエミッタ端子リング;
前記エミッタ端子リングの周囲に形成された第2のベース端子リング;及び
前記第2のベース端子リングの外側に形成されたコレクタ端子リング;
を有するバイポーラ接合トランジスタ。 - 前記第1のベース端子リング及び前記第2のベース端子リングはN+ドープト領域である、請求項8に記載のバイポーラ接合トランジスタ。
- 前記第1のベース端子リングと、前記エミッタ端子リングと、前記第2のベース端子リングとは、シャロー・トレンチ・アイソレーション領域によって分離されている、請求項8に記載のバイポーラ接合トランジスタ。
- 前記第1のベース端子リング、前記エミッタ端子リング、及び前記第2のベース端子リングは正方形に形成されている、請求項10に記載のバイポーラ接合トランジスタ。
- 当該バイポーラ接合トランジスタはバンドギャップ電圧基準回路の一部である、請求項11に記載のバイポーラ接合トランジスタ。
- 前記第1のベース端子リング、前記エミッタ端子リング、前記第2のベース端子リング、及び前記コレクタ端子リングの幅は1μmである、請求項11に記載のバイポーラ接合トランジスタ。
- 前記第1のベース端子リング、前記エミッタ端子リング、及び前記第2のベース端子リングはPウェル内に形成されている、請求項10に記載のバイポーラ接合トランジスタ。
- 基板内にウェルを形成する工程;
前記ウェル内に、複数のリングを有するベース端子を形成する工程;
前記複数のリングのうちの如何なる2つの間にもエミッタ端子リングを形成する工程;及び
前記ベース端子リング及び前記エミッタ端子リングを包囲するコレクタ端子リングを形成する工程;
を有する方法。 - 前記基板はp型基板であり、前記ウェルはNウェルである、請求項15に記載の方法。
- 第1のリングと、第2のリングと、前記エミッタ端子リングと、前記コレクタ端子リングとを分離するシャロー・トレンチ・アイソレーション領域を形成する工程、を更に有する請求項15に記載の方法。
- 前記シャロー・トレンチ・アイソレーション領域を形成する工程は、前記シャロー・トレンチ・アイソレーション領域を、前記ウェルのほぼ半分の深さに形成することを含む、請求項17に記載の方法。
- エミッタ端子リングを形成する工程、及び前記コレクタ端子リングを形成する工程は、P+ドープト領域を形成する工程を有する、請求項16に記載の方法。
- リング状バイポーラ接合トランジスタのアレイを形成するために使用される請求項15に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/525,737 | 2006-09-22 | ||
US11/525,737 US7439608B2 (en) | 2006-09-22 | 2006-09-22 | Symmetric bipolar junction transistor design for deep sub-micron fabrication processes |
PCT/US2007/020289 WO2008039340A1 (en) | 2006-09-22 | 2007-09-20 | Symmetric bipolar junction transistor design for deep sub-micron fabrication processes |
Publications (2)
Publication Number | Publication Date |
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JP2010503999A true JP2010503999A (ja) | 2010-02-04 |
JP5122574B2 JP5122574B2 (ja) | 2013-01-16 |
Family
ID=39230504
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Application Number | Title | Priority Date | Filing Date |
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JP2009529221A Expired - Fee Related JP5122574B2 (ja) | 2006-09-22 | 2007-09-20 | ディープサブミクロン製造プロセスのための対称バイポーラ接合トランジスタ設計 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7439608B2 (ja) |
JP (1) | JP5122574B2 (ja) |
KR (1) | KR101062590B1 (ja) |
CN (1) | CN101517744B (ja) |
DE (1) | DE112007002213B4 (ja) |
WO (1) | WO2008039340A1 (ja) |
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WO2023112486A1 (ja) * | 2021-12-17 | 2023-06-22 | 株式会社村田製作所 | バイポーラトランジスタ及び半導体装置 |
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Also Published As
Publication number | Publication date |
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DE112007002213T5 (de) | 2010-01-28 |
US7439608B2 (en) | 2008-10-21 |
CN101517744B (zh) | 2012-07-18 |
KR101062590B1 (ko) | 2011-09-06 |
US20080087918A1 (en) | 2008-04-17 |
WO2008039340A1 (en) | 2008-04-03 |
JP5122574B2 (ja) | 2013-01-16 |
DE112007002213B4 (de) | 2013-12-05 |
CN101517744A (zh) | 2009-08-26 |
KR20090055008A (ko) | 2009-06-01 |
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