JPS6414961A - Mesh-emitter type transistor - Google Patents
Mesh-emitter type transistorInfo
- Publication number
- JPS6414961A JPS6414961A JP17149687A JP17149687A JPS6414961A JP S6414961 A JPS6414961 A JP S6414961A JP 17149687 A JP17149687 A JP 17149687A JP 17149687 A JP17149687 A JP 17149687A JP S6414961 A JPS6414961 A JP S6414961A
- Authority
- JP
- Japan
- Prior art keywords
- region
- nodal
- mesh
- emitter
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve both switching characteristics and the reverse direction safety movement region when inductance is in an on-load state of the title transistor without decrease in hFE by a method wherein a mesh-like high density second base region having a nodal is provided directly under the nodal of a mesh-like emitter region. CONSTITUTION:The first base region 2' is formed in an N-type semiconductor substrate 1, which is a collector region, and a region 4 is formed in mesh-like shape in the region 2 '. The second base region 3 crosses with the meth direction of the region 4 in the direction of 45 deg., a part of a nodal is overlapped with the nodal of the emitter region at the position of an emitter contact 6, the impurity density of the region 3 is higher than that of the region 2', and the former is formed deeper than the latter. As the high density region 3 is brought to the point directly under the nodal part of the emitter region, the amount of transverse resistance of R1 is reduced, and it can be balanced with the amount of resistance in the base lateral direction R2. Accordingly, the inclination in carrier distribution can be reduced when the transistor is ON-OFF operated, the switching characteristics and the inverse safe-operating area in an inductance on-load state can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17149687A JPS6414961A (en) | 1987-07-08 | 1987-07-08 | Mesh-emitter type transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17149687A JPS6414961A (en) | 1987-07-08 | 1987-07-08 | Mesh-emitter type transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6414961A true JPS6414961A (en) | 1989-01-19 |
| JPH0575172B2 JPH0575172B2 (en) | 1993-10-20 |
Family
ID=15924177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17149687A Granted JPS6414961A (en) | 1987-07-08 | 1987-07-08 | Mesh-emitter type transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6414961A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010503999A (en) * | 2006-09-22 | 2010-02-04 | インテル コーポレイション | Symmetric bipolar junction transistor design for deep submicron manufacturing processes |
| JP2014232883A (en) * | 2014-07-28 | 2014-12-11 | ローム株式会社 | Bipolar semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5026480A (en) * | 1973-07-09 | 1975-03-19 | ||
| JPS5222885A (en) * | 1975-08-14 | 1977-02-21 | Matsushita Electronics Corp | Transistor and manufacturing system |
| JPS62142356A (en) * | 1985-12-17 | 1987-06-25 | Sanken Electric Co Ltd | Transistor |
-
1987
- 1987-07-08 JP JP17149687A patent/JPS6414961A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5026480A (en) * | 1973-07-09 | 1975-03-19 | ||
| JPS5222885A (en) * | 1975-08-14 | 1977-02-21 | Matsushita Electronics Corp | Transistor and manufacturing system |
| JPS62142356A (en) * | 1985-12-17 | 1987-06-25 | Sanken Electric Co Ltd | Transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010503999A (en) * | 2006-09-22 | 2010-02-04 | インテル コーポレイション | Symmetric bipolar junction transistor design for deep submicron manufacturing processes |
| JP2014232883A (en) * | 2014-07-28 | 2014-12-11 | ローム株式会社 | Bipolar semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0575172B2 (en) | 1993-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6457674A (en) | Conductivity-modulation mosfet | |
| DE59712106D1 (en) | SILICON GERMANIUM hetero | |
| JPS6414961A (en) | Mesh-emitter type transistor | |
| JPS6442859A (en) | Bipolar transistor and manufacture thereof | |
| JPS6461058A (en) | Bipolar transistor and manufacture thereof | |
| JPS5473585A (en) | Gate turn-off thyristor | |
| JPS6472561A (en) | Bipolar transistor | |
| JPS6490561A (en) | Semiconductor device | |
| EP0384113A3 (en) | Multilayer base heterojunction biopolar transistor | |
| JPS56108255A (en) | Semiconductor integrated circuit | |
| JPS5667970A (en) | Gate turn-off thyristor | |
| JPS5615068A (en) | Semiconductor device and manufacture thereof | |
| JPH0499328A (en) | Bipolar transistor | |
| JPS5745274A (en) | Semiconductor device | |
| JPS5788769A (en) | Semiconductor device | |
| JPS5694766A (en) | Semiconductor device | |
| KR970010739B1 (en) | Method for manufacturing a semiconductor device | |
| JPS55158669A (en) | Lateral type transistor | |
| JPS5735366A (en) | Semiconductor integrated circuit device | |
| JPS55165675A (en) | Thyristor | |
| JPS54162979A (en) | Semiconductor integrated circuit | |
| JPS6435953A (en) | Semiconductor device | |
| JPS55160459A (en) | Semiconductor integrated circuit | |
| JPS56148862A (en) | Semiconductor device | |
| KR20000051042A (en) | Power bipolar junction transistor |