CN108807515A - 双极性晶体管 - Google Patents

双极性晶体管 Download PDF

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CN108807515A
CN108807515A CN201710311951.4A CN201710311951A CN108807515A CN 108807515 A CN108807515 A CN 108807515A CN 201710311951 A CN201710311951 A CN 201710311951A CN 108807515 A CN108807515 A CN 108807515A
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bipolar transistor
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CN108807515B (zh
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卓升
潘贞维
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United Microelectronics Corp
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Abstract

本发明公开一种双极性晶体管，其主要包含一射极区、一基极区以及一集极区，其中射极区的边缘切齐基极区的边缘。此外，基极区的边缘切齐集极区的边缘，射极区的边缘同时切齐基极区与集极区的边缘且射极区的边缘宽度等于基极区的边缘宽度。另外依据双极性晶体管的一俯视角，基极区与集极区各包含矩形。

Description

双极性晶体管
技术领域
本发明涉及一种具有低集极区与基极区面积的双极性晶体管。
背景技术
双极性晶体管主要由三部分掺杂程度不同的半导体材料所组成，其中晶体管中的电荷流动主要是由于载流子在PN接面处的扩散作用和漂移运动。以NPN晶体管为例，按照设计，高掺杂的射极区域的电子，通过扩散作用运动到基极。在基极区域，空穴为多数载流子，而电子少数载流子。由于基极区域很薄，这些电子又通过漂移运动到达集极，从而形成集极电流，因此双极性晶体管被归到少数载流子设备。双极性晶体管能够放大信号，并且具有较好的功率控制、高速工作以及耐久能力，所以它常被用来构成放大器电路，或驱动扬声器、电动机等设备，并被广泛地应用于航空航天工程、医疗器械和机器人等应用产品中。
然而至今双极性晶体管的设计均仍不尽理想，特别是基极区域与集极区域所占据面积过大进而影响元件效能。因此如何改良现今的双极性晶体管结构极为现今一重要课题。
发明内容
本发明公开一种双极性晶体管，其主要包含一射极区、一基极区以及一集极区，其中射极区的边缘切齐基极区的边缘。此外，基极区的边缘切齐集极区的边缘，射极区的边缘同时切齐基极区与集极区的边缘且射极区的边缘宽度等于基极区的边缘宽度。另外依据双极性晶体管的一俯视角，基极区与集极区各包含矩形。
本发明另一实施例公开一种双极性晶体管，其主要包含一射极区、一基极区以及一集极区，其中各该射极区、该基极区以及该集极区包含一鳍状结构。其中射极区、基极区以及集极区沿着一第一方向延伸而鳍状结构则沿着一第二方向延伸。此外，射极区的边缘切齐该基极区的边缘，基极区的边缘切齐集极区的边缘，射极区的边缘同时切齐基极区与集极区的边缘且射极区的边缘宽度等于基极区的边缘宽度。另外依据双极性晶体管的一俯视角，基极区与集极区各包含矩形。
附图说明
图1为本发明第一实施例的一双极性晶体管的一结构示意图；
图2为图1中沿着切线AA'的剖面示意图；
图3为本发明第二实施例的一双极性晶体管的一结构示意图；
图4为图1中沿着切线BB'的剖面示意图。
主要元件符号说明
12 基底 14 射极区
16 基极区 18 集极区
20 第一基极区 22 第二基极区
24 第一集极区 26 第二集极区
28 浅沟隔离 30 N阱
32 P阱 34 N阱
36 深N阱
42 基底 44 射极区
46 基极区 48 集极区
50 鳍状结构 52 浅沟隔离
54 第一射极区 56 第二射极区
58 第一基极区 60 第二基极区
62 第一集极区 64 第二集极区
66 N阱 68 P阱
70 N阱 72 深N阱
74 接触插塞 76 接触插塞
78 接触插塞 80 接触插塞
82 接触插塞 84 接触插塞
具体实施方式
请参照图1至图2，图1至图2为本发明第一实施例的一双极性晶体管的一结构示意图，其中图1为双极性晶体管的上视图，图2则为图1中沿着切线AA'的剖面示意图。如图1与图2所示，双极性晶体管主要包含一射极区14、二基极区16以及二集极区18设于基底12上。其中基底12较佳由半导体材料所构成，例如可包括硅基底、外延硅基底、硅锗基底、碳化硅基底或硅覆绝缘(silicon-on-insulator，SOI)基底，但不以此为限。
在本实施例中，基底12内较佳设有浅沟隔离28(shallow trench isolation)由此定义并分隔出射极区14、基极区16以及集极区18的所在位置。如图1所示，本实施例所揭露的双极性晶体管具有一射极区14设于中间部位，二基极区16包括第一基极区20与第二基极区22分别设于射极区14的上方与下方，以及二集极区18包括第一集极区24与第二集极区26分别设于第一基极区20与第二基极区22的上方与下方。其中射极区14、基极区16与集极区18较佳以交错方式排列，或从细部来看第一集极区24、第一基极区20、射极区14、第二基极区22以及第二集极区26较佳沿着一第一方向，例如本实施例的Y方向由上往下呈一直线排列。
从上视角度来看，射极区14、二基极区16以及二集极18区等三者均为矩形，其中设于中间的射极区14较佳为正方形，二基极区16与二集极区18均为长方形，其中第一基极区20与第二基极22区较佳为面积较小的长方形，而第一集极区24与第二集极区26较佳为面积较大的长方形。另外第一集极区24、第一基极区20、射极区14、第二基极区22以及第二集极区26均较佳具有相同宽度，因此第一集极区24、第一基极区20、射极区14、第二基极区22以及第二集极区26的左右侧壁或边缘较佳沿着Y方向相互切齐。
在本实施例中，双极性晶体管主要由一NPN型晶体管所构成，例如第一集极区24包含一N+区域，第一基极区20较佳包含一P+区域，射极区14较佳包含一N+区域，第二基极区22包含另一P+区域，以及第二集极区26较佳包含另一N+区域。
其中，第一集极区24正下方的基底内设有一N阱30，第一基极区20、射极区14以及第二基极区22正下方的基底12内设有一P阱32，第二集极区26正下方的基底12内设有另一N阱34，且N阱30、P阱32以及N阱34下方的基底12内又设有一深N阱36。
此外，射极区14是一个具高掺杂浓度的区域，主要将自由电子经由P阱32射入基极区20，因此虽然本实施例的射极区14与两个集极区18都由N型掺杂区所组成，但射极区14的N+区域浓度较佳大于第一集极区24与第二集极区26的N+区域浓度。
从运作角度来看，NPN型双极性晶体管可以视为共用阳极的两个二极体接合在一起。在双极性晶体管的正常工作状态下，射极接面(即基极区16与射极区14之间的PN接面)处于顺向偏压状态，而集极接面(即基极区16与集极区18之间的PN接面)则处于逆向偏压状态。在没有外加电压时，射极接面N区的电子浓度大于P区的电子浓度，使部分电子扩散到P区。同理，P区的部分空穴也将扩散到N区。如此射极接面上将形成一个空间电荷区或称为空乏层，产生一个内在的电场，其方向由N区指向P区，这个电场将阻碍上述扩散过程的进一步发生而达成动态平衡。此时若把一个顺向电压施加在射极接面上，上述载流子扩散运动和空乏层中内在电场之间的动态平衡将被打破，使热激发电子注入基极区域。
需注意的是，上述实施例所揭露的双极性晶体管虽以NPN型晶体管为例，但不局限于此态样，本发明又可将上述双极性晶体管结构应用至一PNP型晶体管，例如可将上述射极区14、二基极区16、二集极区18以及基底12内所有阱区的导电型式全部反转，以形成另一以PNP型晶体管为架构的双极性晶体管，此实施例也属本发明所涵盖的范围。
请继续参照图3至图4，图3至图4为本发明第二实施例的一双极性晶体管的一结构示意图，其中图3为双极性晶体管的上视图，图4则为图3中沿着切线BB'的剖面示意图。如图3与图4所示，双极性晶体管主要包含二射极区44、二基极区46以及二集极区48设于基底52上，其中各射极区44、基极区46以及集极区48均分别包含至少一鳍状结构50，如图3所示，各射极区44、基极区46以及集极区48都分别包含多根鳍状结构50，且每一区内的多根鳍状结构50可选择性通过一接触插塞来彼此电连接，从细部来看，射极区44是利用接触插塞74、76来电连接其内的多根鳍状结构50、基极区46是利用接触插塞78、80来电连接其内的多根鳍状结构50，而集极区48则是利用接触插塞82、84来电连接其内的多根鳍状结构50。
整体而言，若如上所述利用接触插塞同时电连接多个鳍状结构50，则包含多个鳍状结构50的每个射极区44、基极区46以及集极区48较佳一同构成一个双极性晶体管。反之，若无上述接触插塞的设置，则本实施例较佳包含多个双极性晶体管，其中每个双极性晶体管的射极区44、基极区46以及集极区48仅通过单根鳍状结构50来彼此传递。如同前述实施例，基底42较佳由半导体材料所构成，例如可包括硅基底、外延硅基底、硅锗基底、碳化硅基底或硅覆绝缘(silicon-on-insulator，SOI)基底，但不以此为限。
在本实施例中，鳍状结构50较佳通过侧壁图案转移(sidewall image transfer,SIT)等技术制得，其程序大致包括：提供一布局图案至电脑系统，并经过适当地运算以将相对应的图案定义于光掩模中。后续可通过光刻及蚀刻制作工艺，以形成多个等距且等宽的图案化牺牲层于基底上，使其个别外观呈现条状。之后依序施行沉积及蚀刻制作工艺，以于图案化牺牲层的各侧壁形成间隙壁。继以去除图案化牺牲层，并在间隙壁的覆盖下施行蚀刻制作工艺，使得间隙壁所构成的图案被转移至基底内，再伴随鳍状结构切割制作工艺(fin cut)而获得所需的图案化结构，例如条状图案化鳍状结构。
除此之外，鳍状结构50的形成方式又可包含先形成一图案化掩模(图未示)于基底42上，再经过一蚀刻制作工艺，将图案化掩模的图案转移至基底42中以形成鳍状结构50。另外，鳍状结构50的形成方式也可以先形成一图案化硬掩模层(图未示)于基底42上，并利用外延制作工艺于暴露出于图案化硬掩模层的基底42上成长出例如包含硅锗的半导体层，而此半导体层即可作为相对应的鳍状结构50。这些形成鳍状结构50的实施例均属本发明所涵盖的范围。
在本实施例中，基底42内同样设有多个浅沟隔离(shallow trench isolation)52由此定义并分隔出射极区44、基极区46以及集极区48的所在位置。如图3所示，本实施例所揭露的双极性晶体管具有二射极区44包括第一射极区54与第二射极区56设于中间部位，二基极区46包括第一基极区58与第二基极区60分别设于第一射极区54与第二射极区56的上方与下方，以及二集极区48包括第一集极区62与第二集极区64分别设于第一基极区58与第二基极区60的上方与下方。其中射极区44、基极区46与集极区48较佳以交错方式排列，或从细部来看第一集极区62、第一基极区58、第一射极区54、第二射极区56、第二基极区60以及第二集极区64较佳沿着一第一方向，例如本实施例的Y方向由上往下呈一直线排列。
从上视角度来看，二射极区44、二基极区46以及二集极区48等三者均为矩形或更加为长方形，其中设于中间的各第一射极区54与第二射极区56的面积较佳大于各第一基极区58与第二基极区60的面积以及各第一集极区62与第二集极区64的面积，第一集极区62与第二集极区64的面积则可等于或略大于各第一基极区58与第二基极区60的面积。
另外第一集极区62、第一基极区58、第一射极区54、第二射极区56、第二基极区60以及第二集极区64均较佳具有相同宽度，因此第一集极区62、第一基极区58、第一射极区54、第二射极区56、第二基极区60以及第二集极区64的左右侧壁或边缘较佳沿着Y方向相互切齐。
在本实施例中，双极性晶体管主要由一NPN型晶体管所构成，例如第一集极区62包含设于鳍状结构50内的N+区域，第一基极区58包含设于鳍状结构50内的P+区域，第一射极区54包含鳍状结构50内的N+区域，第二射极区56包含鳍状结构50内的N+区域，第二基极区60包含鳍状结构50内的另一P+区域，以及第二集极区64包含鳍状结构50内的另一N+区域，其中第一集极区62的鳍状结构50与第一基极区58的鳍状结构50之间设有浅沟隔离52且不彼此接触，第一基极区58的鳍状结构50与第一射极区54的鳍状结构50之间设有浅沟隔离52且不彼此接触，第一射极区54的鳍状结构50与第二射极区56的鳍状结构50之间设有浅沟隔离52且不彼此接触，第二射极区56的鳍状结构50与第二基极区60的鳍状结构50之间设有浅沟隔离52且不彼此接触，第二基极区60的鳍状结构50与第二集极区64的鳍状结构50之间设有浅沟隔离52且不彼此接触。另外射极区44较佳为具高掺杂浓度的区域，主要将自由电子射入基极区62，因此虽然本实施例的两个射极区44与两个集极区48都由N型掺杂区所组成，但各射极区44的N+区域浓度较佳大于各集极区48的N+区域浓度。
此外，第一集极区62正下方的基底42内设有一N阱66，第一基极区58、第一射极区54、第二射极区56以及第二基极区60正下方的基底内设有一P阱68，第二集极区64正下方的基底42内设有另一N阱70，且N阱66、P阱68以及N阱70下方的基底42内又设有一深N阱72。
需注意的是，虽然本实施例中因为制作工艺设计规则的考量将射极区44分隔为两部分，例如包括第一射极区54与第二射极区56，但不局限于此态样，依据本发明一实施例又可选择将第一射极区54与第二射极区56合并为一个射极区，以形成前述第一实施例般于第一基极区20与第二基极区22之间仅设置单一射极区18的态样，此实施例也属本发明所涵盖的范围。
以上所述仅为本发明的较佳实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (20)

1.一种双极性晶体管，包含：
射极区；
基极区；以及
集极区，其中该射极区的边缘切齐该基极区的边缘。
2.如权利要求1所述的双极性晶体管，其中该基极区的边缘切齐该集极区的边缘。
3.如权利要求1所述的双极性晶体管，其中该射极区的边缘切齐该基极区及该集极区的边缘。
4.如权利要求1所述的双极性晶体管，其中该射极区的边缘等于该基极区的边缘。
5.如权利要求4所述的双极性晶体管，另包含浅沟隔离，设于该射极区的边缘及该基极区的边缘。
6.如权利要求1所述的双极性晶体管，其中该基极区的边缘等于该集极区的边缘。
7.如权利要求6所述的双极性晶体管，另包含浅沟隔离，设于该基极区的边缘及该集极区的边缘。
8.如权利要求1所述的双极性晶体管，其中依据该双极性晶体管的一俯视角该基极区包含矩形。
9.如权利要求1所述的双极性晶体管，其中依据该双极性晶体管的一俯视角该集极区包含矩形。
10.一种双极性晶体管，包含：
射极区；
基极区；以及
集极区，其中各该射极区、该基极区以及该集极区包含一鳍状结构。
11.如权利要求10所述的双极性晶体管，其中该射极区、该基极区以及该集极区沿着一第一方向延伸，而该鳍状结构则沿着一第二方向延伸。
12.如权利要求11所述的双极性晶体管，其中该第一方向垂直该第二方向。
13.如权利要求10所述的双极性晶体管，其中该射极区的边缘切齐该基极区的边缘。
14.如权利要求10所述的双极性晶体管，其中该基极区的边缘切齐该集极区的边缘。
15.如权利要求10所述的双极性晶体管，其中该射极区的边缘切齐该基极区及该集极区的边缘。
16.如权利要求10所述的双极性晶体管，其中该基极区包含第一基极区以及一第二基极区。
17.如权利要求16所述的双极性晶体管，另包含浅沟隔离，设于该第一基极区以及该第二基极区之间。
18.如权利要求10所述的双极性晶体管，其中该射极区的边缘等于该基极区的边缘。
19.如权利要求18所述的双极性晶体管，另包含浅沟隔离，设于该射极区的边缘及该基极区的边缘。
20.如权利要求10所述的双极性晶体管，其中依据该双极性晶体管的一俯视角该基极区包含矩形。
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