CN101467262A - 结势垒肖特基整流器及其制造方法 - Google Patents
结势垒肖特基整流器及其制造方法 Download PDFInfo
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- CN101467262A CN101467262A CNA2007800207221A CN200780020722A CN101467262A CN 101467262 A CN101467262 A CN 101467262A CN A2007800207221 A CNA2007800207221 A CN A2007800207221A CN 200780020722 A CN200780020722 A CN 200780020722A CN 101467262 A CN101467262 A CN 101467262A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Abstract
Description
Claims (50)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/396,615 | 2006-04-04 | ||
US11/396,615 US20070228505A1 (en) | 2006-04-04 | 2006-04-04 | Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making |
PCT/US2007/008069 WO2007123803A1 (en) | 2006-04-04 | 2007-04-03 | Junction barrier schottky rectifiers and methods of making thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2011103508322A Division CN102376778A (zh) | 2006-04-04 | 2007-04-03 | 结势垒肖特基整流器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101467262A true CN101467262A (zh) | 2009-06-24 |
CN101467262B CN101467262B (zh) | 2012-01-04 |
Family
ID=38370926
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN2011103508322A Pending CN102376778A (zh) | 2006-04-04 | 2007-04-03 | 结势垒肖特基整流器及其制造方法 |
CN2007800207221A Expired - Fee Related CN101467262B (zh) | 2006-04-04 | 2007-04-03 | 结势垒肖特基整流器及其制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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CN2011103508322A Pending CN102376778A (zh) | 2006-04-04 | 2007-04-03 | 结势垒肖特基整流器及其制造方法 |
Country Status (9)
Country | Link |
---|---|
US (3) | US20070228505A1 (zh) |
EP (1) | EP2011158A1 (zh) |
JP (1) | JP5559530B2 (zh) |
KR (1) | KR101434687B1 (zh) |
CN (2) | CN102376778A (zh) |
AU (1) | AU2007240996B2 (zh) |
CA (1) | CA2648526A1 (zh) |
NZ (1) | NZ571857A (zh) |
WO (1) | WO2007123803A1 (zh) |
Cited By (15)
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CN102263139A (zh) * | 2011-05-24 | 2011-11-30 | 哈尔滨工程大学 | 一种改进的混合整流二极管结构 |
CN103367140A (zh) * | 2013-07-08 | 2013-10-23 | 华中科技大学 | 一种基于碳化硅的脉冲功率半导体开关及其制造方法 |
CN103378143A (zh) * | 2012-04-20 | 2013-10-30 | 湖北台基半导体股份有限公司 | 一种带缓冲层结构晶闸管 |
CN103515452A (zh) * | 2012-06-27 | 2014-01-15 | 飞兆半导体公司 | 功率整流器件和其制造方法及其相关半导体产品 |
CN103782393A (zh) * | 2011-09-11 | 2014-05-07 | 科锐 | 肖特基二极管 |
WO2014083968A1 (ja) * | 2012-11-29 | 2014-06-05 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
CN104170062A (zh) * | 2012-03-05 | 2014-11-26 | 罗伯特·博世有限公司 | 用于在半导体衬底上构造接触部的方法和半导体装置 |
CN105810756A (zh) * | 2016-04-25 | 2016-07-27 | 复旦大学 | 一种混合pin肖特基二极管及其制备方法 |
CN108091682A (zh) * | 2017-11-21 | 2018-05-29 | 重庆大学 | 一种高可靠性肖特基接触超级势垒整流器 |
CN108701722A (zh) * | 2016-02-29 | 2018-10-23 | 三菱电机株式会社 | 半导体装置 |
CN109768092A (zh) * | 2019-03-01 | 2019-05-17 | 重庆平伟实业股份有限公司 | 一种功率半导体器件制造方法及功率半导体器件 |
CN110571262A (zh) * | 2019-09-09 | 2019-12-13 | 电子科技大学 | 一种具有沟槽结构的碳化硅结势垒肖特基二极管 |
CN111164759A (zh) * | 2017-09-15 | 2020-05-15 | 阿斯卡顿公司 | 具有高电流容量的馈线设计 |
US11222782B2 (en) | 2020-01-17 | 2022-01-11 | Microchip Technology Inc. | Self-aligned implants for silicon carbide (SiC) technologies and fabrication method |
CN115207139A (zh) * | 2022-06-24 | 2022-10-18 | 北京纳米能源与系统研究所 | 自驱动紫外光电探测器、光路调整装置和光通信装置 |
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US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
TWI278090B (en) | 2004-10-21 | 2007-04-01 | Int Rectifier Corp | Solderable top metal for SiC device |
US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
US9419092B2 (en) * | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
DE102006033506B4 (de) * | 2006-07-19 | 2008-07-03 | Infineon Technologies Ag | Schottkykontakt-Bauelement und seine Verwendung |
JP2009545885A (ja) * | 2006-07-31 | 2009-12-24 | ヴィシェイ−シリコニックス | SiCショットキーダイオード用モリブデンバリア金属および製造方法 |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
WO2008020911A2 (en) | 2006-08-17 | 2008-02-21 | Cree, Inc. | High power insulated gate bipolar transistors |
US8384181B2 (en) * | 2007-02-09 | 2013-02-26 | Cree, Inc. | Schottky diode structure with silicon mesa and junction barrier Schottky wells |
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CA2648526A1 (en) | 2007-11-01 |
WO2007123803A1 (en) | 2007-11-01 |
AU2007240996A1 (en) | 2007-11-01 |
US20070228505A1 (en) | 2007-10-04 |
KR20090006162A (ko) | 2009-01-14 |
US20080251793A1 (en) | 2008-10-16 |
AU2007240996B2 (en) | 2013-10-17 |
US20130140585A1 (en) | 2013-06-06 |
US8384182B2 (en) | 2013-02-26 |
JP2009532902A (ja) | 2009-09-10 |
JP5559530B2 (ja) | 2014-07-23 |
CN102376778A (zh) | 2012-03-14 |
EP2011158A1 (en) | 2009-01-07 |
NZ571857A (en) | 2011-10-28 |
KR101434687B1 (ko) | 2014-08-26 |
CN101467262B (zh) | 2012-01-04 |
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