US20070228505A1 - Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making - Google Patents

Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making Download PDF

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US20070228505A1
US20070228505A1 US11/396,615 US39661506A US2007228505A1 US 20070228505 A1 US20070228505 A1 US 20070228505A1 US 39661506 A US39661506 A US 39661506A US 2007228505 A1 US2007228505 A1 US 2007228505A1
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conductivity type
semiconductor material
layer
regions
drift
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Michael Mazzola
Lin Cheng
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Power Integrations Inc
Semisouth Laboratories Inc
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Semisouth Laboratories Inc
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Priority to JP2009504230A priority patent/JP5559530B2/ja
Priority to AU2007240996A priority patent/AU2007240996B2/en
Priority to CA002648526A priority patent/CA2648526A1/en
Priority to KR1020087026922A priority patent/KR101434687B1/ko
Priority to EP07754574A priority patent/EP2011158A1/en
Priority to PCT/US2007/008069 priority patent/WO2007123803A1/en
Priority to CN2011103508322A priority patent/CN102376778A/zh
Priority to CN2007800207221A priority patent/CN101467262B/zh
Priority to NZ571857A priority patent/NZ571857A/en
Publication of US20070228505A1 publication Critical patent/US20070228505A1/en
Priority to US12/146,580 priority patent/US8384182B2/en
Priority to US13/751,434 priority patent/US20130140585A1/en
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Assigned to POWER INTEGRATIONS, INC. reassignment POWER INTEGRATIONS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SS SC IP, LLC
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Definitions

  • the present invention relates, in general, to junction barrier Schottky rectifiers or diodes with a vertical p + -n junction and, in particular, to such devices having an epitaxially grown drift layer and epitaxially overgrown drift regions forming a p + -n junction which may or may not be buried and self-planarized Schottky contact regions.
  • the devices can be formed in a wide band-gap semiconductor material such as silicon carbide.
  • SiC Silicon Carbide
  • SiC power switches are logical candidates for these applications due to their excellent material physical properties such as wide energy band-gap, high breakdown field strength, high saturated electron drift velocity and high thermal conductivity compared to the conventional silicon counter part.
  • SiC power devices can operate with lower specific on-resistance than conventional silicon power devices [1].
  • SiC unipolar devices are expected to replace Si bipolar switches and rectifiers in the 600-3000 V range in the very near feature.
  • Schottky diodes which offer a low effective turn-on voltage hence low on-state losses and extremely high switching speed due to primarily majority carrier conduction resulting in no diffusion capacitance [3] and thereby no real reverse recovery on turning off as well as no forward voltage overshoot on turning on, but suffer from high leakage current
  • P-i-N diodes which offer low leakage current but show reverse recovery charge during switching
  • JBS Junction Barrier Schottky
  • SiC rectifiers Because of the fundamental differences in material properties and processing technologies, traditional Si or GaAs microelectronics technologies in power rectifiers (or diodes) can not be easily transferred to SiC. A number of reports of SiC rectifiers have appeared in the last several decades (e.g., [2-6]).
  • U.S. Pat. No. 4,982,260 describes defining p-type emitter regions by etching through a heavily doped p-type well created by diffusion.
  • a p-type well can only be formed in n-type SiC by ion implantation which can result in low minority carrier lifetime due to damage caused by implantation.
  • JBS SiC Junction Barrier Schottky
  • MPS Merged P-I-N Schottky
  • junction barrier rectifier employing an implanted P + region to form p-n junction
  • U.S. Pat. No. 6,104,043 An example of a junction barrier rectifier employing an implanted P + region to form p-n junction can be found in U.S. Pat. No. 6,104,043.
  • Ohmic contacts are formed on heavily doped implanted p-type regions, the conductivity modulation in the drift region of such a structure suffers from low minority carrier lifetime caused by residual implantation damages even after high-temperature thermal anneal.
  • Damage resulting from these processing steps can greatly affect device performance including forward conduction and blocking capability. It is also difficult to have a precise control of p + -n junction depth by ion implantation because of a combination of uncertainties on actual depth profile of implantation tail, defect density, redistribution of implanted ions after annealing, and ionization percentage of dopant atoms and point defects under different bias and/or temperature stress.
  • One method is to selectively grow P + gate regions epitaxially as disclosed in U.S. Pat. No. 6,767,783.
  • Another method of forming a p + -n junction is to epitaxially regrow a P + layer on top of an trench-etched N ⁇ drift layer, followed by a plasma etch-back or chemical-mechanical polishing or other planarization method to expose the N ⁇ drift region for Schottky metal contact.
  • a similar method is disclosed in U.S. Pat. No. 6,897,133 B2.
  • lightly doped P regions are used to form the p-n junction.
  • the epitaxially grown p-type regions do not form JFET regions that may significantly limit current conduction under both normal and surge current operating conditions.
  • a semiconductor device which comprises:
  • a substrate layer comprising a semiconductor material of a first conductivity type
  • an optional buffer layer comprising a semiconductor material of the first conductivity type on the substrate layer
  • drift layer on the substrate layer or buffer layer, the drift layer comprising a semiconductor material of the first conductivity type
  • a central region comprising a plurality of regions of semiconductor material of a second conductivity type different than the first conductivity type on a central portion of the drift layer, the regions of semiconductor material of the second conductivity type having upper surfaces and sidewalls;
  • an integrated circuit which comprises:
  • At least one additional electronic power component formed on the substrate layer is at least one additional electronic power component formed on the substrate layer.
  • a method of making a semiconductor device which comprises:
  • drift layer is on a semiconductor substrate or wherein the drift layer is on a buffer layer comprising a semiconductor material of the first conductivity type and wherein the buffer layer is on the semiconductor substrate.
  • a device made by the above described method is also provided.
  • FIG. 1A is an schematic two-dimensional illustration of a JBS rectifier according to one embodiment having exposed P+ finger, bus-bar, and guard ring regions.
  • FIG. 1B is an schematic two-dimensional illustration of a JBS rectifier according to one embodiment having only the P+ bus-bar regions exposed and having buried p + -n junctions and guard rings.
  • FIG. 1C is an schematic two-dimensional illustration of a JBS rectifier according to one embodiment having exposed P + finger and bus-bar regions and showing junction termination extension (JTE) and mesa edge termination.
  • JTE junction termination extension
  • FIG. 1D is an schematic two-dimensional illustration of a JBS rectifier according to one embodiment having only the P + bus-bar regions exposed and buried p + -n junctions and showing JTE and mesa edge termination.
  • FIG. 2 is a schematic diagram of a starting N + substrate layer having an epitaxially grown N + buffer layer, an N-type drift layer, and a P + layer on the drift layer.
  • FIG. 3A is a schematic diagram of a device having trenched P + fingers, bus-bars, and guard rings (as an edge termination structure) which are formed on top of an N-type drift layer.
  • FIGS. 3B and 3C are schematic top views of two embodiments of the device showing two different p-type bus bar arrangements.
  • FIG. 4 is a schematic diagram of the P + finger, bus-bar, and guard ring as an exemplary edge termination being trench-filled and planarized with the 2 nd N-type drift layer.
  • FIG. 5A is a schematic diagram of the 2 nd N-type drift layer being etched back or patterned then etched back to expose all P + finger, bus-bar, and guard ring (as an exemplar of edge termination method).
  • FIG. 5B is a schematic diagram of the 2 nd N-type drift layer being etched back or patterned then etched back to expose only the P + bus-bar regions.
  • FIG. 5C is a schematic diagram of the 2 nd N-type drift layers being etched back or patterned then etched back to expose all P + finger and bus-bar with JTE or mesa edge termination.
  • FIG. 5D is a schematic diagram of the 2 nd N-type drift layers being etched back or patterned then etched back to expose only the P + bus-bar regions with JTE or mesa edge termination.
  • FIG. 6A is a schematic diagram of the dielectric layer(s) being deposited and patterned to form either electrical isolation or passivation on the JBS diodes having exposed P + finger, bus-bar, and guard ring regions.
  • FIG. 6B is a schematic diagram of the dielectric layer(s) being deposited and patterned to form either electrical isolation or passivation on the JBS diodes having exposed only the P + bus-bar regions and buried p + -n junctions and guard ring.
  • FIG. 6C is a schematic diagram of the dielectric layer(s) being deposited and patterned to form either electrical isolation or passivation on the JBS diodes having exposed P + finger and bus-bar regions with JTE or mesa edge termination.
  • FIG. 6D is a schematic diagram of the dielectric layer(s) being deposited and patterned to form either electrical isolation or passivation on the JBS diodes having exposed only the P + bus-bar regions and buried p + -n junctions with JTE or mesa edge termination, and to open windows for Schottky and Ohmic metal contacts.
  • FIG. 7A is a schematic diagram of the metals being deposited to form electrically conducting contacts to the 2 nd N ⁇ drift regions, all exposed P + regions, and backside of the substrate on the JBS diodes having exposed P + finger, bus-bar, and guard ring regions.
  • FIG. 7B is a schematic diagram of the metals being deposited to form electrically conducting contacts to the 2 nd N ⁇ drift regions, all exposed P + regions, and backside of the substrate on the JBS diodes having exposed only the P + bus-bar regions and buried p + -n junctions and guard ring.
  • FIG. 7C is a schematic diagram of the metals being deposited to form electrically conducting contacts to the 2 nd N ⁇ drift regions, all exposed P + regions, and backside of the substrate on the JBS diodes having exposed P + finger and bus-bar regions with JTE or mesa edge termination.
  • FIG. 7D is a schematic diagram of the metals being deposited to form electrically conducting contacts to the 2 nd N ⁇ drift regions, all exposed P + regions, and backside of the substrate on the JBS diodes having exposed only the P + bus-bar regions and buried p + -n junctions with JTE or mesa edge termination.
  • An object of the present invention is to provide a Junction Barrier Schottky (JBS) rectifier with all epitaxially grown single or dual drift regions including a self-planarized 2 nd drift region and buried or exposed p + -n junction with P + guard rings or JTE with or without a N + field stop region or “deep” mesa edge termination in SiC, that can be made electrically isolated from the other devices fabricated on the same die, and that can be implemented in such a way that the devices fabricated on the same die may be monolithically integrated with other electronic power components, for example junction field-effect transistors (JFETs) or bipolar junction transistors (BJTs).
  • JBS Junction Barrier Schottky
  • a further object of the invention is to provide the concept and an example of planarization of trenched P + region by homo-epitaxial over-growth of the 2 nd lightly doped N ⁇ drift regions on a patterned silicon carbide substrate.
  • a further object of the invention is to provide the concept and an example of planarization of trenched P + region by homo-epitaxial over-growth of only the 2 nd lightly doped N ⁇ drift regions on a silicon carbide patterned substrate.
  • a further object of the invention is to provide a method of the fabrication of the above devices.
  • the method comprises epitaxially growing a P + layer on top of a flat first N ⁇ drift layer, followed by an etch-back of the P + layer down to the drift region to form a patterned P + layer comprising elongate P + regions (i.e., fingers) and, optionally, one or more bus-bars.
  • the bus-bars can connect all of the P + fingers together around the periphery of the device to permit external metal contact to the Schottky contact metal thus permitting forward biasing of the buried p + -n junction structure which will provide conductivity modulated current for surge protections.
  • the devices may comprise an edge termination structure.
  • Edge termination methods include, but are not limited to, P + guard rings, P-type junction termination extension (JTE) by either epitaxial growth or ion implantation, or “deep” mesa edge termination (i.e.: mesa etched down through all epitaxial N ⁇ drift and P + layers into the N + substrate).
  • JTE P-type junction termination extension
  • a second n-type drift region is then over-grown on the patterned P + region and the exposed first N ⁇ drift layer.
  • the doping concentration of the re-grown second N ⁇ drift region can be different from that of the first N ⁇ drift layer.
  • R on on-resistance
  • V F on-state voltage drop
  • the trade-off of this design may be partially cancelled by re-growing the second N ⁇ drift region with higher doping concentration than that of the first N ⁇ drift layer.
  • the second N ⁇ drift region may be more lightly doped than the first N ⁇ drift layer.
  • the second N ⁇ drift region fills in the P + trenches and over-grows on top of the structured epitaxial P + regions, it can be patterned and etched back to expose either all the P + regions or only the bus-bars which connect to all the buried P + fingers for external metal contacts.
  • An edge termination structure can then be formed. Edge termination structures can be formed by a selectively re-grown or implanted p-type JTE region with or without N + field-stop region, “deep” mesa etched through all epitaxial layers down to the N + substrate, or P + guard rings.
  • Metal layers are then applied on top of the second N ⁇ drift region to form a Schottky contact and on top of the exposed P + region to form an Ohmic contact, and backside of the substrate to form an Ohmic contact. Finally, thick metal layers can be applied on top of both Schottky and Ohmic contacts to form the anode of the diode and on the backside Ohmic contact to form the cathode of the diode.
  • the schedule of the Ohmic contact formation in the sequence just described, which may require a high-temperature anneal, is such that the electrical properties of the Schottky contact are not compromised.
  • the P + trench depth or finger height, the P + finger width, the distance between two adjacent P + fingers for the second N ⁇ region to fill in, and the doping concentration of the first drift layer and the second drift region can be selected according to formulae known to those schooled in the art to have low R on and V F while still making the depletion of the drift layer continuous among all the P + regions in the off-state to screen the high electrical field in the depletion region from the Schottky barrier existing at the surface-interface of the Schottky metal and the second N ⁇ drift region.
  • the second drift region reasonably planar on top of the structured P + regions.
  • the alternating trenches and P + fingers normally work against the planar growth of a regrown epitaxial layer.
  • a method for self-planarized epitaxial re-growth which can be used to form the second N ⁇ drift region is described in U.S. patent application Ser. No. 11/198,298, which is incorporated by reference herein.
  • the self-planarized second n-type drift regions can be homoepitaxially over-grown free of key-holes (i.e., free of voids or inclusions in the single-crystal epitaxial material) on the trenched P + regions.
  • the disclosed JBS rectifiers can be monolithically integrated with other electronic power components, such as JFETs or BJTs (Bipolar Junction Transistors) or MOSFETs or gate turn-off thyristors (GTOs) in SiC.
  • These monolithic devices can be made by selective or blanket re-growth of one or more n-type and/or p-type layers, for example a third N + layer grown on top of the second drift region to form a junction field-effect transistor on the same die with the JBS rectifiers, where the source and channel regions can be defined by a selective plasma etch-back of the N + and the second N ⁇ drift regions.
  • the device can be built on a silicon carbide substrate, which can be electrically either p-type or n-type with or without an epitaxially grown buffer layer of the same conductivity type.
  • the device comprises an epitaxially grown first n-type drift and then a p-type trenched region, followed by an epitaxially re-grown n-type planarized second drift region which may have the same or different doping concentration from the first drift layer.
  • the device structure is defined using conventional photolithography and plasma dry-etch.
  • the Schottky contact to the n-type drift region and Ohmic contact to the p-type region are formed on top of the wafer, while the Ohmic contact to the heavily doped substrate is formed on the backside of the wafer.
  • the proposed JBS diode may have different on- and off-state characteristics, and can be implemented for both punch-through and non-punch-through modes of off-state operation for the same n-type doping of the second drift region.
  • the devices described above can be used in monolithic microwave integrated circuits (MMICs).
  • the devices described above can be fabricated monolithically with other power electronic components on the same wafer or die for use in power switching or converter or booster circuits.
  • Silicon carbide crystallizes in more than 200 different poly-types. The most important are: 3C—SiC (cubic unit cell, zincblende); 2H—SiC; 4H—SiC; 6H—SiC (hexagonal unit cell, wurtzile); and 15R—SiC (rhombohedral unit cell).
  • 3C—SiC cubic unit cell, zincblende
  • 2H—SiC 4H—SiC
  • 6H—SiC hexagonal unit cell, wurtzile
  • 15R—SiC rhombohedral unit cell.
  • the 4H— polytype is more attractive for power devices thanks to its larger bandgap and higher electron mobility.
  • the 4 H-SiC is preferred, it is to be understood that the present invention is applicable to devices and integrated circuits described herein made of other poly-types of silicon carbide.
  • SiC silicon carbide
  • FIGS. 1A-1D are schematic two-dimensional views of a semiconductor device referred to as a Junction Barrier Schottky (JBS) rectifier illustrating different edge termination structures.
  • the device is built on a silicon carbide substrate 1 , which can be electrically either p-type or n-type, with or without an epitaxially grown buffer layer 2 of the same conductivity type.
  • the device comprises an epitaxially grown first n-type drift layer 3 and then a p-type trenched region 4 , followed by an epitaxially re-grown n-type self-planarized second drift region 8 which may have the same or different doping concentration from the first drift layer.
  • the p-type region comprises bus bars 5 .
  • the device structure can be defined using conventional photolithography and plasma dry-etch. Metal forming the Schottky contact on the second drift region is connected to the Ohmic contacts on the exposed p-type regions to form a continuous anode 10 on top of the wafer while a cathode 11 is formed by Ohmic contact to the n-type region on the backside of the substrate.
  • the P + guard ring regions 6 ( a ) and 6 ( b ) can be either exposed to the passivation dielectric layer 9 as shown in FIG. 1A or buried into lightly n-type drift region 8 as shown in FIG. 1B .
  • FIG. 1C is a schematic two-dimensional illustration of a JBS rectifier having exposed P + finger and bus-bar regions.
  • FIG. 1C also illustrates both junction termination extension (JTE) 6 c and mesa edge termination 6 d structures.
  • JTE junction termination extension
  • FIG. 1D is a schematic two-dimensional illustration of a JBS rectifier according to a further embodiment having buried p + -n junctions and exposed P + bus-bar regions.
  • FIG. 1D also illustrates both junction termination extension (JTE) 6 c and mesa edge termination 6 d structures.
  • JTE junction termination extension
  • FIG. 2 a schematic diagram shows the starting N + substrate with epitaxially grown N + buffer, first N-type drift, and P + layers.
  • a high-quality, heavily doped, thin N + buffer layer with minimum defect density serves as a good stop of electrical field at the interface of N-type drift and N + buffer layers.
  • the buffer layer shown in FIG. 2 is optional.
  • the lightly doped N-type drift region provides the blocking capability, while the heavily doped P + epi-layer forms the p + -n junction that provides the junction barrier.
  • the junction barrier provides for the possibility of conductivity modulation by hole injection to conduct surge currents.
  • P + epi-layer can also be used to provide edge termination in the form of, for example, guard rings.
  • FIG. 2 also shows representative doping concentrations for each of these layers.
  • the P + epi-layer can be patterned using a masking material.
  • exemplary masking materials include, but are not limited to, photo-resists, lifted-off metals, oxides, or any other known materials.
  • the P + layer can then be etched down to the first n-type drift layer 3 to simultaneously form: P + fingers 4 and trenches 7 for conductivity modulation; one or more P-type external bus-bars 5 that can connect to the P + fingers 4 for Ohmic metal contact; and P + guard rings 6 ( a, b ) for edge termination.
  • FIGS. 3B and 3C are schematic top views of devices showing two alternative bus bar arrangements.
  • FIG. 3B shows an embodiment wherein the bus-bars 5 circumscribe the p-type regions 4 .
  • FIG. 3C shows an alternative embodiment wherein the bus-bars 5 enclose the p-type regions 4 on three sides. Other arrangements of p-type regions 4 and bus-bars 5 are also possible.
  • the trenched P + regions are filled and planarized with homoepitaxial N-type semiconductor material to form second n-type drift regions.
  • the doping concentration of these second n-type drift regions can be different from the first n-type drift layer and/or graded for facilitating the degree of depletion of the drift layer and to control the magnitude of the electric field within the junction barrier region.
  • planarization occurs by optimizing the C/Si ratio and the trench orientation with respect to the direction of the off-cut. The same is true for 4H—SiC cut 8° or 4° off of the basal plane ([0001]) towards the ⁇ 112-0> direction. The same is true for 6H—SiC cut 3.5° off of [0001] towards the ⁇ 112-0> direction.
  • the orthogonal orientation of the major flat i.e., off-cut towards the ⁇ 11-00> direction) works equally well.
  • the SiC layers can be formed by doping the layers with donor or acceptor materials using known techniques.
  • exemplary donor materials include nitrogen and phosphorus. Nitrogen is a preferred donor material.
  • exemplary acceptor materials for doping SiC include boron and aluminum. Aluminum is a preferred acceptor material.
  • the above materials are merely exemplary, however, and any acceptor and donor materials which can be doped into silicon carbide can be used.
  • the doping levels and thicknesses of the various layers of the JBS rectifiers described herein can be varied to produce a device having desired characteristics for a particular application. Similarly, the dimensions of the various features of the device can be varied to produce a device having desired characteristics for a particular application.
  • FIGS. 5A-5D illustrate devices having either buried P + fingers ( FIGS. 5B and 5D ) or exposed P + fingers ( FIGS. 5A and 5C ) illustrating various edge termination structures.
  • the second N-type drift regions can be patterned and etched down to expose both the P + fingers 4 and the bus-bar regions 5 for metal contacts.
  • the second N-type drift region can be patterned and etched down to expose only the P + bus-bar regions, resulting in buried p + -n junctions beneath the second n-type drift region.
  • the device can have exposed P + guard ring regions as an edge termination structure.
  • the device can have buried P + guard ring regions.
  • FIGS. 5C and 5D also illustrate both junction termination extension (JTE) 6 c and mesa edge termination 6 d structures.
  • JTE junction termination extension
  • a dielectric layer or stack 9 for electrical isolation can then be grown and/or deposited anywhere on the upper surface of the device followed by a patterning and etch through the dielectric layer or stack to open Schottky and Ohmic metal contacts on top of the device.
  • the dielectric layer or stack 9 can be used between different devices fabricated on the same wafer.
  • the dielectric layer or stack 9 can provide electrical field passivation outside the anode metal contact and on top of the edge termination structure.
  • the edge termination structure can be an exposed guard ring as shown in FIG. 6A , buried guard ring regions as shown in FIG. 6B , JTE regions as shown in FIGS. 6C and 6D , or mesa edge termination regions as also shown in FIGS. 6C and 6D .
  • metal layer 10 can also be deposited on the exposed P + fingers 4 .
  • the metal layers 10 , 1 1 may consist of one or two different metals or metal alloys or metal mixtures. For example, one metal or alloy or mixture can be used for the Schottky contact to the second n-type drift region and another metal or alloy or mixture can be used to form a good Ohmic contact to both the P + finger and the P + bus-bar regions as shown in FIGS. 7A and 7C .
  • the anode can contact only the P + bus-bar regions as shown in FIGS. 7B and 7D .
  • an Ohmic metal or metal alloy or metal mixture can be deposited and selectively etched followed by a high-temperature anneal (e.g., >900° C.) to form Ohmic contact to the P + regions prior to the Schottky metal/alloy/mixture deposition. If one metal or metal alloy or metal mixture is carefully selected for simultaneous Schottky and Ohmic contacts formation, a low temperature (e.g., >500° C.) anneal will make Ohmic contact to the P + region without damaging the Schottky contact.
  • a high-temperature anneal e.g., >900° C.
  • JBS devices as described herein can be fabricated on the same die for different voltage and current ratings by choosing proper widths of the P + fingers and trenches.
  • the JBS devices described herein can be monolithically fabricated with other power electronic components (e.g., JFETs or BJTs) on the same die by selectively or blanket re-growing one or more n-type and/or p-type layers, for example an N + layer on top of the second drift region, to form a junction field-effect transistor (JFET) on the same die with the JBS rectifiers, wherein the source and channel regions can be defined by a selectively plasma etch-back of the N + layer and the second N ⁇ drift region in Sic.
  • JFET junction field-effect transistor
  • a JBS rectifier with an n + -p junction can be fabricated using the methods described herein.
  • the SiC layers can be formed by epitaxial growth on a suitable substrate.
  • the layers can be doped during epitaxial growth.
US11/396,615 2006-04-04 2006-04-04 Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making Abandoned US20070228505A1 (en)

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US11/396,615 US20070228505A1 (en) 2006-04-04 2006-04-04 Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making
NZ571857A NZ571857A (en) 2006-04-04 2007-04-03 Junction barrier schottky rectifiers and methods of making thereof
PCT/US2007/008069 WO2007123803A1 (en) 2006-04-04 2007-04-03 Junction barrier schottky rectifiers and methods of making thereof
CN2007800207221A CN101467262B (zh) 2006-04-04 2007-04-03 结势垒肖特基整流器及其制造方法
CA002648526A CA2648526A1 (en) 2006-04-04 2007-04-03 Junction barrier schottky rectifiers and methods of making thereof
KR1020087026922A KR101434687B1 (ko) 2006-04-04 2007-04-03 접합 배리어 쇼트키 정류기들 및 그의 제조 방법
EP07754574A EP2011158A1 (en) 2006-04-04 2007-04-03 Junction barrier schottky rectifiers and methods of making thereof
JP2009504230A JP5559530B2 (ja) 2006-04-04 2007-04-03 接合障壁ショットキー整流器およびその製造方法
CN2011103508322A CN102376778A (zh) 2006-04-04 2007-04-03 结势垒肖特基整流器及其制造方法
AU2007240996A AU2007240996B2 (en) 2006-04-04 2007-04-03 Junction barrier Schottky rectifiers and methods of making thereof
US12/146,580 US8384182B2 (en) 2006-04-04 2008-06-26 Junction barrier schottky rectifiers having epitaxially grown P+-N methods of making
US13/751,434 US20130140585A1 (en) 2006-04-04 2013-01-28 Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making

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