CN108701722A - 半导体装置 - Google Patents
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Abstract
在漂移层(1)之上彼此并排地形成有第一p型阳极层(2)以及第二p型阳极层(3)。在漂移层(1)之下彼此并排地形成有n型阴极层(5)以及p型阴极层(6)。在漂移层(1)与n型阴极层(5)、p型阴极层(6)之间形成有n型缓冲层(7)。第一p型阳极层(2)的扩散深度比第二p型阳极层(3)的扩散深度深。第一p型阳极层(2)的杂质浓度比第二p型阳极层(3)的杂质浓度大。n型阴极层(5)的扩散深度比p型阴极层(6)的扩散深度深。n型阴极层(5)的杂质浓度比p型阴极层(6)的杂质浓度大。
Description
技术领域
本发明涉及半导体装置。
背景技术
近年来,正在开发半导体二极管(例如,参考专利文献1)。作为半导体二极管的VF-EREC折衷特性的控制手段,传统上采用的是使用了重金属扩散或者电子·离子照射技术的寿命控制。
专利文献1:日本特开平2-86173号公报
发明内容
但是,就寿命控制而言,根据电子·离子照射时的相对于被照射体的照射角度或温度等,VF-EREC的波动大。另外,存在由于因芯片通电工作时的自发热带来的晶格缺陷的变化而导致的电气特性的变动、由于因晶格缺陷引起的泄露电流大而导致的高温工作时的热失控等问题。
本发明就是为了解决上述课题而提出的,其目的在于得到能够对VF-EREC折衷特性进行调整而不依赖于寿命控制的半导体装置。
本发明所涉及的半导体装置的特征在于,具备:漂移层;第一以及第二p型阳极层,它们在所述漂移层之上彼此并排地形成;n型阴极层以及p型阴极层,它们在所述漂移层之下彼此并排地形成;以及n型缓冲层,其形成在所述漂移层与所述n型阴极层、所述p型阴极层之间,所述第一p型阳极层的扩散深度比所述第二p型阳极层的扩散深度深,所述第一p型阳极层的杂质浓度比所述第二p型阳极层的杂质浓度大,所述n型阴极层的扩散深度比所述p型阴极层的扩散深度深,所述n型阴极层的杂质浓度比所述p型阴极层的杂质浓度大。
发明的效果
在本发明中,第一p型阳极层的扩散深度比第二p型阳极层的扩散深度深,第一p型阳极层的杂质浓度比第二p型阳极层的杂质浓度大,n型阴极层的扩散深度比p型阴极层的扩散深度深,n型阴极层的杂质浓度比p型阴极层的杂质浓度大。由此,能够广范围地对VF-EREC折衷特性进行调整而不依赖于寿命控制。
附图说明
图1是表示本发明的实施方式1所涉及的半导体装置的剖面图。
图2是表示本发明的实施方式2所涉及的半导体装置的剖面图。
图3是表示本发明的实施方式3所涉及的半导体装置的剖面图。
图4是表示本发明的实施方式4所涉及的半导体装置的剖面图。
具体实施方式
参照附图,对本发明的实施方式所涉及的半导体装置进行说明。对相同或相应的结构要素标注相同的标号,有时省略重复说明。
实施方式1
图1是表示本发明的实施方式1所涉及的半导体装置的剖面图。在n-型漂移层1之上彼此并排地形成有第一以及第二p型阳极层2、3。阳极电极4与第一以及第二p型阳极层2、3以欧姆接触的方式连接。
在n-型漂移层1之下彼此并排地形成有n型阴极层5以及p型阴极层6。在n-型漂移层1与n型阴极层5、p型阴极层6之间形成有n型缓冲层7。阴极电极8与n型阴极层5、p型阴极层6以欧姆接触的方式连接。n型阴极层5以及p型阴极层6通过阴极电极8进行短路。
本实施方式中,第一p型阳极层2的扩散深度xp2比第二p型阳极层3的扩散深度xp3深(xp2>xp3)。第一p型阳极层2的杂质浓度cp2比第二p型阳极层3的杂质浓度cp3大(cp2>cp3)。n型阴极层5的扩散深度xn2比p型阴极层6的扩散深度xp1深(xn2>xp1)。n型阴极层5的杂质浓度cn2比p型阴极层6的杂质浓度cp1大(cn2>cp1)。
这里,如果将由n型阴极层5和p型阴极层6构成的1个周期的间距即背面p/n间距减小,则VF增加,EREC减少。即,VF-EREC折衷曲线向高速侧移动。因此,作为向适于各种用途的逆变器安装的续流二极管,优选能够通过使背面p/n间距变化而对VF-EREC折衷特性进行调整。但是,如果将背面p/n间距设计得过小,则阶跃耐量降低,相反,如果将背面p/n间距设计得过大,则恢复耐量降低。对此,通过如本实施方式这样对扩散深度和杂质浓度进行设定,从而能够避免上述矛盾。
另外,如果p型阴极层6相对于背面p/n间距的占有率即背面p/n短路率变小,则VF增加,EREC减少。即,VF-EREC折衷曲线向高速侧移动。因此,作为向适于各种用途的逆变器安装的续流二极管,优选能够通过使背面p/n短路率变化而对VF-EREC折衷特性进行调整。但是,如果将背面p/n短路率设计得过小,则阶跃耐量降低,交叉点(cross point)增加,相反,如果将背面p/n短路率设计得过大,则恢复耐量降低。对此,通过如本实施方式这样对阳极构造进行设计,从而能够避免上述矛盾。
另外,如果将p型阳极层的浓度降低,则VF增加,EREC减少。即,VF-EREC折衷曲线向高速侧移动。另外,作为附带效果,ON状态的阳极侧的载流子浓度降低,从而恢复波形的Irr也降低,阴极侧的载流子浓度相对地提高,由此能够使阶跃耐量也提高。但是,如果使p型阳极层的浓度过度降低,则耐压降低。对此,通过如本实施方式这样对阳极构造进行设计,从而能够避免上述矛盾。
因此,通过如本实施方式这样对扩散深度和杂质浓度进行设定,能够广范围地对VF-EREC折衷特性进行调整而不依赖于以往的寿命控制。因此,能够抑制在截止动作结尾时电压暴涨的阶跃现象以及以该现象为契机的振荡现象。并且,能够提高可控制电流密度电流、容许切断速度等截止动作时的切断能力。
实施方式2
图2是表示本发明的实施方式2所涉及的半导体装置的剖面图。第一p型阳极层2的间距比n型阴极层5的间距小。
这里,就在纵向上具备寄生双极型晶体管构造的二极管而言,与没有这种构造的二极管相比,恢复时的最大切断电流密度降低。对此,通过如本实施方式这样对第一p型阳极层2的间距进行设定,从而能够抑制纵向上的寄生双极型晶体管的动作,因此,能够抑制恢复时的最大可控制电流密度的降低。除此之外,也能够取得与实施方式1同样的效果。
实施方式3
图3是表示本发明的实施方式3所涉及的半导体装置的剖面图。n型阴极层5之上的第一p型阳极层2a的间距比p型阴极层6之上的第一p型阳极层2b的间距小。由此,能够抑制纵向上的寄生双极型晶体管的动作,因此,能够抑制恢复时的最大可控制电流密度的降低。除此之外,也能够取得与实施方式1同样的效果。
实施方式4
图4是表示本发明的实施方式4所涉及的半导体装置的剖面图。由第一p型阳极层2和第二p型阳极层3构成的1个周期的间距比由n型阴极层5和p型阴极层6构成的1个周期的间距小。由此,能够抑制纵向上的寄生双极型晶体管的动作,因此,能够抑制恢复时的最大可控制电流密度的降低。除此之外,也能够取得与实施方式1同样的效果。
此外,尽管实施方式1至4中以形成高耐压功率模块(≥600V)的二极管为例进行了说明,但与耐压等级、半导体材料无关,在RC-IGBT等二极管领域也能够应用本发明,能够取得上述的效果。
另外,半导体装置不限定于由硅形成,也可以由与硅相比带隙更大的宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料或者金刚石。这种由宽带隙半导体形成的功率半导体元件的耐电压性、容许电流密度高,因此,能够小型化。通过使用上述实现了小型化的元件,能够使安装了该元件的半导体模块也小型化。另外,由于元件的耐热性高,所以能够使散热器的散热鳍片小型化,能够将水冷部空冷化,因此能够进一步将半导体模块小型化。另外,由于元件的电力损耗低且高效,因此能够使半导体模块高效化。
标号的说明
1 n-型漂移层,2、2a、2b第一p型阳极层,3第二p型阳极层,5 n型阴极层,6 p型阴极层,7 n型缓冲层。
Claims (4)
1.一种半导体装置,其特征在于,具备:
漂移层;
第一以及第二p型阳极层,它们在所述漂移层之上彼此并排地形成;
n型阴极层以及p型阴极层,它们在所述漂移层之下彼此并排地形成;以及
n型缓冲层,其形成在所述漂移层与所述n型阴极层、所述p型阴极层之间,
所述第一p型阳极层的扩散深度比所述第二p型阳极层的扩散深度深,
所述第一p型阳极层的杂质浓度比所述第二p型阳极层的杂质浓度大,
所述n型阴极层的扩散深度比所述p型阴极层的扩散深度深,
所述n型阴极层的杂质浓度比所述p型阴极层的杂质浓度大。
2.根据权利要求1所述的半导体装置,其特征在于,
所述第一p型阳极层的间距比所述n型阴极层的间距小。
3.根据权利要求1所述的半导体装置,其特征在于,
所述n型阴极层之上的所述第一p型阳极层的间距比所述p型阴极层之上的所述第一p型阳极层的间距小。
4.根据权利要求1所述的半导体装置,其特征在于,
由所述第一p型阳极层和所述第二p型阳极层构成的1个周期的间距比由所述n型阴极层和所述p型阴极层构成的1个周期的间距小。
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CN113728443A (zh) * | 2019-04-02 | 2021-11-30 | Abb电网瑞士股份公司 | 改进反向恢复的分段功率二极管结构 |
JP2022048882A (ja) * | 2020-09-15 | 2022-03-28 | 株式会社東芝 | 半導体装置 |
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WO2017187477A1 (ja) | 2016-04-25 | 2017-11-02 | 三菱電機株式会社 | 半導体装置 |
JP6865670B2 (ja) * | 2017-11-22 | 2021-04-28 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
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JPWO2017149607A1 (ja) | 2018-10-04 |
JP6750668B2 (ja) | 2020-09-02 |
DE112016006517B4 (de) | 2022-09-29 |
WO2017149607A1 (ja) | 2017-09-08 |
US20180315863A1 (en) | 2018-11-01 |
US10355142B2 (en) | 2019-07-16 |
CN108701722B (zh) | 2021-06-11 |
DE112016006517T5 (de) | 2018-11-15 |
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