CN101454843B - 升压电荷转移管线 - Google Patents

升压电荷转移管线 Download PDF

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Publication number
CN101454843B
CN101454843B CN2007800198716A CN200780019871A CN101454843B CN 101454843 B CN101454843 B CN 101454843B CN 2007800198716 A CN2007800198716 A CN 2007800198716A CN 200780019871 A CN200780019871 A CN 200780019871A CN 101454843 B CN101454843 B CN 101454843B
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CN
China
Prior art keywords
charge
input
terminal
voltage
coupled
Prior art date
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Expired - Fee Related
Application number
CN2007800198716A
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English (en)
Chinese (zh)
Other versions
CN101454843A (zh
Inventor
麦可·P.·安东尼
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Kenet LLC
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Kenet LLC
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Publication date
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Publication of CN101454843A publication Critical patent/CN101454843A/zh
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Publication of CN101454843B publication Critical patent/CN101454843B/zh
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN2007800198716A 2006-05-31 2007-05-31 升压电荷转移管线 Expired - Fee Related CN101454843B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80948506P 2006-05-31 2006-05-31
US60/809,485 2006-05-31
PCT/US2007/012906 WO2007143074A2 (en) 2006-05-31 2007-05-31 Boosted charge transfer pipeline

Publications (2)

Publication Number Publication Date
CN101454843A CN101454843A (zh) 2009-06-10
CN101454843B true CN101454843B (zh) 2013-01-23

Family

ID=38802067

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800198716A Expired - Fee Related CN101454843B (zh) 2006-05-31 2007-05-31 升压电荷转移管线

Country Status (7)

Country Link
US (1) US8385498B2 (enExample)
EP (1) EP2038893B1 (enExample)
JP (1) JP5798715B2 (enExample)
KR (2) KR101517745B1 (enExample)
CN (1) CN101454843B (enExample)
TW (1) TWI474597B (enExample)
WO (1) WO2007143074A2 (enExample)

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US20100289936A1 (en) * 2008-01-31 2010-11-18 Hiroshi Kimura Buffer circuit, image sensor chip comprising the same, and image pickup device
WO2013014724A1 (ja) * 2011-07-22 2013-01-31 富士通株式会社 電荷転送回路
CN102394650B (zh) * 2011-10-11 2013-11-13 中国电子科技集团公司第五十八研究所 用于电荷耦合流水线adc的反馈增强型电荷传输电路
JP5990080B2 (ja) * 2012-10-05 2016-09-07 キヤノン株式会社 撮像システム、および撮像システムの駆動方法
CN104270152B (zh) * 2014-10-13 2017-12-22 中国电子科技集团公司第五十八研究所 用于电荷耦合流水线模数转换器的pvt不敏感共模电荷控制装置
US9503078B1 (en) 2015-05-22 2016-11-22 Realtek Semiconductor Corp. Method and apparatus for charge transfer
JP2017134743A (ja) * 2016-01-29 2017-08-03 株式会社東芝 レギュレータ回路
CN109391248B (zh) 2017-08-10 2020-12-08 华为技术有限公司 一种信号分发电路及信号分发电路系统
CN107565955B (zh) * 2017-08-29 2019-08-30 黄山市祁门新飞电子科技发展有限公司 输入信号摆幅增强型信号传输电路
TWI694729B (zh) * 2018-06-19 2020-05-21 瑞昱半導體股份有限公司 開關電路
CN108809286A (zh) * 2018-06-19 2018-11-13 苏州睿度智能科技有限公司 工艺波动不敏感增强型信号传输开关
EP3606047B1 (en) * 2018-07-30 2023-08-30 Brillnics Singapore Pte. Ltd. Solid-state imaging device and method for driving a solid-state imaging device
CN111431517B (zh) * 2020-05-07 2022-04-22 西安交通大学 内嵌输入缓冲器的超高速自举开关电路

Citations (3)

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US5909131A (en) * 1996-07-31 1999-06-01 Analog Devices, Inc. Low-distortion technique to bandlimit a switched-capacitor sampling circuit
CN1269907A (zh) * 1997-09-29 2000-10-11 松下电器产业株式会社 模拟存储器及图像处理系统
CN1444286A (zh) * 2002-03-08 2003-09-24 三洋电机株式会社 电荷传输装置

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US4224585A (en) * 1978-08-28 1980-09-23 Reticon Corporation Methods and apparatus for compensating for charge transfer inefficiency in imaging and other variable length charge transfer devices
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DE2950584C2 (de) * 1979-12-15 1984-07-12 Robert Bosch Gmbh, 7000 Stuttgart Schaltungsanordnung mit steuerbarem Widerstand
JPS58170213A (ja) * 1982-03-31 1983-10-06 Toshiba Corp 電圧比較回路
JPS5921059A (ja) 1982-07-28 1984-02-02 Hitachi Ltd 電荷転送回路
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FR2566538B1 (fr) * 1984-06-26 1986-11-14 Thomson Csf Comparateur analogique a transfert de charge et dispositifs utilisant un tel comparateur
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Publication number Priority date Publication date Assignee Title
US5909131A (en) * 1996-07-31 1999-06-01 Analog Devices, Inc. Low-distortion technique to bandlimit a switched-capacitor sampling circuit
CN1269907A (zh) * 1997-09-29 2000-10-11 松下电器产业株式会社 模拟存储器及图像处理系统
CN1444286A (zh) * 2002-03-08 2003-09-24 三洋电机株式会社 电荷传输装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Heller 等.《Charge Transfer Compensation Circuit》.《Prior Art Database》.2005,3164-3165. *

Also Published As

Publication number Publication date
EP2038893B1 (en) 2017-07-12
WO2007143074A2 (en) 2007-12-13
JP5798715B2 (ja) 2015-10-21
KR20140098866A (ko) 2014-08-08
US20070279507A1 (en) 2007-12-06
US8385498B2 (en) 2013-02-26
WO2007143074A3 (en) 2008-04-03
KR20090031675A (ko) 2009-03-27
CN101454843A (zh) 2009-06-10
JP2009539324A (ja) 2009-11-12
KR101517745B1 (ko) 2015-05-04
TWI474597B (zh) 2015-02-21
EP2038893A2 (en) 2009-03-25
TW200822504A (en) 2008-05-16

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Granted publication date: 20130123