JP5798715B2 - ブースト型電荷転送回路 - Google Patents

ブースト型電荷転送回路 Download PDF

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Publication number
JP5798715B2
JP5798715B2 JP2009513290A JP2009513290A JP5798715B2 JP 5798715 B2 JP5798715 B2 JP 5798715B2 JP 2009513290 A JP2009513290 A JP 2009513290A JP 2009513290 A JP2009513290 A JP 2009513290A JP 5798715 B2 JP5798715 B2 JP 5798715B2
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Japan
Prior art keywords
charge transfer
charge
input
terminal
voltage
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JP2009513290A
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English (en)
Japanese (ja)
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JP2009539324A (ja
JP2009539324A5 (enExample
Inventor
アンソニー・マイケル・ピー
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Kenet LLC
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Kenet LLC
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Publication of JP2009539324A5 publication Critical patent/JP2009539324A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2009513290A 2006-05-31 2007-05-31 ブースト型電荷転送回路 Active JP5798715B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80948506P 2006-05-31 2006-05-31
US60/809,485 2006-05-31
PCT/US2007/012906 WO2007143074A2 (en) 2006-05-31 2007-05-31 Boosted charge transfer pipeline

Publications (3)

Publication Number Publication Date
JP2009539324A JP2009539324A (ja) 2009-11-12
JP2009539324A5 JP2009539324A5 (enExample) 2010-07-15
JP5798715B2 true JP5798715B2 (ja) 2015-10-21

Family

ID=38802067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009513290A Active JP5798715B2 (ja) 2006-05-31 2007-05-31 ブースト型電荷転送回路

Country Status (7)

Country Link
US (1) US8385498B2 (enExample)
EP (1) EP2038893B1 (enExample)
JP (1) JP5798715B2 (enExample)
KR (2) KR20090031675A (enExample)
CN (1) CN101454843B (enExample)
TW (1) TWI474597B (enExample)
WO (1) WO2007143074A2 (enExample)

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WO2009096192A1 (ja) * 2008-01-31 2009-08-06 Panasonic Corporation バッファ回路及びそれを備えたイメージセンサチップ並びに撮像装置
JP5780300B2 (ja) * 2011-07-22 2015-09-16 富士通株式会社 電荷転送回路
CN102394650B (zh) * 2011-10-11 2013-11-13 中国电子科技集团公司第五十八研究所 用于电荷耦合流水线adc的反馈增强型电荷传输电路
JP5990080B2 (ja) * 2012-10-05 2016-09-07 キヤノン株式会社 撮像システム、および撮像システムの駆動方法
CN104270152B (zh) * 2014-10-13 2017-12-22 中国电子科技集团公司第五十八研究所 用于电荷耦合流水线模数转换器的pvt不敏感共模电荷控制装置
US9503078B1 (en) 2015-05-22 2016-11-22 Realtek Semiconductor Corp. Method and apparatus for charge transfer
JP2017134743A (ja) * 2016-01-29 2017-08-03 株式会社東芝 レギュレータ回路
CN109391248B (zh) 2017-08-10 2020-12-08 华为技术有限公司 一种信号分发电路及信号分发电路系统
CN107565955B (zh) * 2017-08-29 2019-08-30 黄山市祁门新飞电子科技发展有限公司 输入信号摆幅增强型信号传输电路
CN108809286A (zh) * 2018-06-19 2018-11-13 苏州睿度智能科技有限公司 工艺波动不敏感增强型信号传输开关
TWI694729B (zh) * 2018-06-19 2020-05-21 瑞昱半導體股份有限公司 開關電路
TWI753278B (zh) * 2018-07-30 2022-01-21 新加坡商普里露尼庫斯新加坡私人有限公司 固態攝像裝置、固態攝像裝置之驅動方法、及電子機器
CN111431517B (zh) * 2020-05-07 2022-04-22 西安交通大学 内嵌输入缓冲器的超高速自举开关电路

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US3969636A (en) * 1975-06-30 1976-07-13 General Electric Company Charge sensing circuit for charge transfer devices
US4138665A (en) * 1977-09-21 1979-02-06 General Electric Company Preamplifier for analog to digital converters
US4224585A (en) * 1978-08-28 1980-09-23 Reticon Corporation Methods and apparatus for compensating for charge transfer inefficiency in imaging and other variable length charge transfer devices
JPS5921059B2 (ja) * 1979-07-27 1984-05-17 富士通株式会社 アドレス計算処理方式
DE2950584C2 (de) * 1979-12-15 1984-07-12 Robert Bosch Gmbh, 7000 Stuttgart Schaltungsanordnung mit steuerbarem Widerstand
JPS58170213A (ja) * 1982-03-31 1983-10-06 Toshiba Corp 電圧比較回路
JPS5921059A (ja) 1982-07-28 1984-02-02 Hitachi Ltd 電荷転送回路
JPS60149165A (ja) * 1984-01-17 1985-08-06 Matsushita Electric Ind Co Ltd 電荷転送装置
FR2566538B1 (fr) * 1984-06-26 1986-11-14 Thomson Csf Comparateur analogique a transfert de charge et dispositifs utilisant un tel comparateur
JPS6193661A (ja) * 1984-10-15 1986-05-12 Matsushita Electric Ind Co Ltd 電荷転送素子
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Also Published As

Publication number Publication date
CN101454843B (zh) 2013-01-23
US20070279507A1 (en) 2007-12-06
EP2038893A2 (en) 2009-03-25
KR20140098866A (ko) 2014-08-08
WO2007143074A3 (en) 2008-04-03
JP2009539324A (ja) 2009-11-12
EP2038893B1 (en) 2017-07-12
KR101517745B1 (ko) 2015-05-04
TWI474597B (zh) 2015-02-21
CN101454843A (zh) 2009-06-10
TW200822504A (en) 2008-05-16
US8385498B2 (en) 2013-02-26
KR20090031675A (ko) 2009-03-27
WO2007143074A2 (en) 2007-12-13

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