CN101410991B - 半导体器件制造期间的局部退火 - Google Patents

半导体器件制造期间的局部退火 Download PDF

Info

Publication number
CN101410991B
CN101410991B CN2006800481382A CN200680048138A CN101410991B CN 101410991 B CN101410991 B CN 101410991B CN 2006800481382 A CN2006800481382 A CN 2006800481382A CN 200680048138 A CN200680048138 A CN 200680048138A CN 101410991 B CN101410991 B CN 101410991B
Authority
CN
China
Prior art keywords
semiconductor device
technology
metal level
metal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800481382A
Other languages
English (en)
Chinese (zh)
Other versions
CN101410991A (zh
Inventor
袁述
林菁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tinggi Technologies Pte Ltd
Original Assignee
Tinggi Technologies Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tinggi Technologies Pte Ltd filed Critical Tinggi Technologies Pte Ltd
Publication of CN101410991A publication Critical patent/CN101410991A/zh
Application granted granted Critical
Publication of CN101410991B publication Critical patent/CN101410991B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2006800481382A 2005-12-20 2006-12-19 半导体器件制造期间的局部退火 Expired - Fee Related CN101410991B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
SG200508210-2A SG133432A1 (en) 2005-12-20 2005-12-20 Localized annealing during semiconductor device fabrication
SG200508210-2 2005-12-20
SG2005082102 2005-12-20
PCT/SG2006/000395 WO2007073354A1 (en) 2005-12-20 2006-12-19 Localized annealing during semiconductor device fabrication

Publications (2)

Publication Number Publication Date
CN101410991A CN101410991A (zh) 2009-04-15
CN101410991B true CN101410991B (zh) 2011-04-13

Family

ID=38188964

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800481382A Expired - Fee Related CN101410991B (zh) 2005-12-20 2006-12-19 半导体器件制造期间的局部退火

Country Status (6)

Country Link
US (1) US8329556B2 (enExample)
JP (1) JP2009520376A (enExample)
KR (1) KR20080096510A (enExample)
CN (1) CN101410991B (enExample)
SG (1) SG133432A1 (enExample)
WO (1) WO2007073354A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034643B2 (en) 2003-09-19 2011-10-11 Tinggi Technologies Private Limited Method for fabrication of a semiconductor device
KR20070013273A (ko) 2004-03-15 2007-01-30 팅기 테크놀러지스 프라이빗 리미티드 반도체 장치의 제조
CN1998094B (zh) 2004-04-07 2012-12-26 霆激技术有限公司 半导体发光二极管上的反射层的制造
SG130975A1 (en) 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US10340438B2 (en) 2017-11-28 2019-07-02 International Business Machines Corporation Laser annealing qubits for optimized frequency allocation
US10170681B1 (en) 2017-11-28 2019-01-01 International Business Machines Corporation Laser annealing of qubits with structured illumination
US11895931B2 (en) 2017-11-28 2024-02-06 International Business Machines Corporation Frequency tuning of multi-qubit systems
US10418540B2 (en) 2017-11-28 2019-09-17 International Business Machines Corporation Adjustment of qubit frequency through annealing
US10355193B2 (en) 2017-11-28 2019-07-16 International Business Machines Corporation Flip chip integration on qubit chips
DE102021108756A1 (de) * 2021-04-08 2022-10-13 Osram Opto Semiconductors Gmbh Verfahren zum testen eines wafers und wafer
US20230420563A1 (en) * 2022-06-24 2023-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06310500A (ja) 1993-01-22 1994-11-04 Toshiba Corp 半導体装置の製造方法
US6420242B1 (en) * 1998-01-23 2002-07-16 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
EP1139409A3 (en) * 2000-02-29 2003-01-02 Agere Systems Guardian Corporation Selective laser anneal on semiconductor material
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
WO2005088743A1 (en) * 2004-03-15 2005-09-22 Tinggi Technologies Private Limited Fabrication of semiconductor devices

Family Cites Families (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897627A (en) 1974-06-28 1975-08-05 Rca Corp Method for manufacturing semiconductor devices
CA1027257A (en) 1974-10-29 1978-02-28 James A. Benjamin Overlay metallization field effect transistor
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5654228A (en) 1995-03-17 1997-08-05 Motorola VCSEL having a self-aligned heat sink and method of making
JP3511970B2 (ja) 1995-06-15 2004-03-29 日亜化学工業株式会社 窒化物半導体発光素子
FR2737342B1 (fr) 1995-07-25 1997-08-22 Thomson Csf Composant semiconducteur avec dissipateur thermique integre
KR0159388B1 (ko) 1995-09-30 1999-02-01 배순훈 평탄화 방법
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
JP2005260255A (ja) 1996-02-19 2005-09-22 Sharp Corp 化合物半導体装置及びその製造方法
US5811927A (en) 1996-06-21 1998-09-22 Motorola, Inc. Method for affixing spacers within a flat panel display
US6210479B1 (en) 1999-02-26 2001-04-03 International Business Machines Corporation Product and process for forming a semiconductor structure on a host substrate
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6117784A (en) 1997-11-12 2000-09-12 International Business Machines Corporation Process for integrated circuit wiring
US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
KR19990052640A (ko) 1997-12-23 1999-07-15 김효근 오믹접촉 형성을 이용한 다이오드용 금속박막및 그의 제조방법
US6091085A (en) 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JP3144377B2 (ja) 1998-03-13 2001-03-12 日本電気株式会社 半導体装置の製造方法
JP3847477B2 (ja) 1998-12-17 2006-11-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
DE19921987B4 (de) 1998-05-13 2007-05-16 Toyoda Gosei Kk Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen
US6803243B2 (en) 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3525061B2 (ja) 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
US6307218B1 (en) 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
JP3739951B2 (ja) 1998-11-25 2006-01-25 東芝電子エンジニアリング株式会社 半導体発光素子およびその製造方法
JP3531722B2 (ja) 1998-12-28 2004-05-31 信越半導体株式会社 発光ダイオードの製造方法
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
EP1039555A1 (en) 1999-03-05 2000-09-27 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP2000294837A (ja) 1999-04-05 2000-10-20 Stanley Electric Co Ltd 窒化ガリウム系化合物半導体発光素子
US6020261A (en) 1999-06-01 2000-02-01 Motorola, Inc. Process for forming high aspect ratio circuit features
GB9913950D0 (en) 1999-06-15 1999-08-18 Arima Optoelectronics Corp Unipolar light emitting devices based on iii-nitride semiconductor superlattices
JP4189710B2 (ja) 1999-07-16 2008-12-03 Ｄｏｗａエレクトロニクス株式会社 発光ダイオードの製造方法
JP2001035974A (ja) 1999-07-19 2001-02-09 Nec Corp 半導体装置及びその製造方法
JP2001049491A (ja) 1999-08-04 2001-02-20 Fujitsu Ltd Ｃｕ電解めっき成膜方法
JP3633447B2 (ja) 1999-09-29 2005-03-30 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6492661B1 (en) 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
WO2001041225A2 (en) 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
JP2001168094A (ja) 1999-12-06 2001-06-22 Murata Mfg Co Ltd 配線構造、配線形成方法及び半導体装置
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
JP4501225B2 (ja) 2000-02-21 2010-07-14 日亜化学工業株式会社 発光素子および発光素子の製造方法
JP2001237461A (ja) 2000-02-22 2001-08-31 Toshiba Corp 半導体発光素子
JP4060511B2 (ja) 2000-03-28 2008-03-12 パイオニア株式会社 窒化物半導体素子の分離方法
EP1277241B1 (de) 2000-04-26 2017-12-13 OSRAM Opto Semiconductors GmbH Lumineszenzdiodenchip auf der basis von gan
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
JP2002083999A (ja) 2000-06-21 2002-03-22 Sharp Corp 半導体発光素子
US6420732B1 (en) 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
US6661028B2 (en) 2000-08-01 2003-12-09 United Epitaxy Company, Ltd. Interface texturing for light-emitting device
TW456058B (en) 2000-08-10 2001-09-21 United Epitaxy Co Ltd Light emitting diode and the manufacturing method thereof
US6380564B1 (en) 2000-08-16 2002-04-30 United Epitaxy Company, Ltd. Semiconductor light emitting device
US6562648B1 (en) 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
TW466784B (en) 2000-09-19 2001-12-01 United Epitaxy Co Ltd Method to manufacture high luminescence LED by using glass pasting
TW475276B (en) 2000-11-07 2002-02-01 Ind Tech Res Inst GaN based III-V compound semiconductor light-emitting device
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP3970530B2 (ja) 2001-02-19 2007-09-05 三菱電機株式会社 半導体装置およびその製造方法
US6956250B2 (en) 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
CN1185720C (zh) 2001-03-05 2005-01-19 全新光电科技股份有限公司 一种镀有金属反射镜膜基板的发光二极管及其制造方法
US6468824B2 (en) 2001-03-22 2002-10-22 Uni Light Technology Inc. Method for forming a semiconductor device having a metallic substrate
US6589857B2 (en) 2001-03-23 2003-07-08 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor film
US6509270B1 (en) 2001-03-30 2003-01-21 Cypress Semiconductor Corp. Method for polishing a semiconductor topography
KR100482174B1 (ko) 2001-08-08 2005-04-13 삼성전기주식회사 기판제거 기술을 이용한 GaN계 LED 제작 방법
US20030064535A1 (en) 2001-09-28 2003-04-03 Kub Francis J. Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate
JP4336071B2 (ja) 2001-11-08 2009-09-30 古河電気工業株式会社 放熱性に優れた半導体装置
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6455340B1 (en) 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
JP3782357B2 (ja) 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
JP2003243700A (ja) 2002-02-12 2003-08-29 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP4242599B2 (ja) 2002-04-08 2009-03-25 パナソニック株式会社 窒化物半導体装置の製造方法及び窒化物半導体基板の製造方法
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
JP3896027B2 (ja) 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP4233268B2 (ja) 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP3962282B2 (ja) 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP3962283B2 (ja) 2002-05-29 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP2004014938A (ja) 2002-06-10 2004-01-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004088083A (ja) 2002-06-25 2004-03-18 Matsushita Electric Ind Co Ltd 半導体発光素子、その製造方法及びその実装方法
TW540171B (en) 2002-07-18 2003-07-01 United Epitaxy Co Ltd Manufacturing method of high-power light emitting diode
JP2004072052A (ja) 2002-08-09 2004-03-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6649437B1 (en) 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US20040104395A1 (en) 2002-11-28 2004-06-03 Shin-Etsu Handotai Co., Ltd. Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device
KR100495215B1 (ko) 2002-12-27 2005-06-14 삼성전기주식회사 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법
US6825559B2 (en) 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
US20080105303A1 (en) * 2003-01-03 2008-05-08 Bp Corporation North America Inc. Method and Manufacturing Thin Film Photovoltaic Modules
JP4179539B2 (ja) 2003-01-15 2008-11-12 富士通株式会社 化合物半導体装置及びその製造方法
JP2004241397A (ja) * 2003-01-23 2004-08-26 Dainippon Printing Co Ltd 薄膜トランジスタおよびその製造方法
JP4492034B2 (ja) 2003-04-11 2010-06-30 日亜化学工業株式会社 Ｈｅｍｔ及びその製造方法
CN1802755B (zh) 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US7244628B2 (en) 2003-05-22 2007-07-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
JP4295669B2 (ja) 2003-05-22 2009-07-15 パナソニック株式会社 半導体素子の製造方法
KR100483049B1 (ko) 2003-06-03 2005-04-15 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드의 제조방법
US6921924B2 (en) 2003-06-18 2005-07-26 United Epitaxy Company, Ltd Semiconductor light-emitting device
US6967346B2 (en) 2003-08-02 2005-11-22 Formosa Epitaxy Incorporation Light emitting diode structure and manufacture method thereof
US6958494B2 (en) 2003-08-14 2005-10-25 Dicon Fiberoptics, Inc. Light emitting diodes with current spreading layer
US8034643B2 (en) 2003-09-19 2011-10-11 Tinggi Technologies Private Limited Method for fabrication of a semiconductor device
AU2003263726A1 (en) 2003-09-19 2005-04-11 Xuejun Kang Fabrication of conductive metal layer on semiconductor devices
US6911376B2 (en) 2003-10-01 2005-06-28 Wafermasters Selective heating using flash anneal
US7700973B2 (en) 2003-10-10 2010-04-20 The Regents Of The University Of California GaN/AlGaN/GaN dispersion-free high electron mobility transistors
TWI313071B (en) 2003-10-15 2009-08-01 Epistar Corporatio Light-emitting semiconductor device having enhanced brightness
US7119372B2 (en) 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7012281B2 (en) 2003-10-30 2006-03-14 Epistar Corporation Light emitting diode device and manufacturing method
KR101154494B1 (ko) 2003-12-09 2012-06-13 재팬 사이언스 앤드 테크놀로지 에이젼시 질소면의 표면상의 구조물 제조를 통한 고효율 3족 질화물계 발광다이오드
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
JP4647216B2 (ja) 2004-02-19 2011-03-09 信越半導体株式会社 ＧａＰ発光素子の製造方法
US20050208435A1 (en) 2004-03-19 2005-09-22 Irene Chen Method for fabricating metallic structure
JP4955384B2 (ja) 2004-03-30 2012-06-20 日本電気株式会社 半導体装置
JP4356494B2 (ja) 2004-03-30 2009-11-04 株式会社デンソー 半導体装置
CN1998094B (zh) 2004-04-07 2012-12-26 霆激技术有限公司 半导体发光二极管上的反射层的制造
EP1749308A4 (en) 2004-04-28 2011-12-28 Verticle Inc SEMICONDUCTOR COMPONENTS WITH VERTICAL STRUCTURE
US7791061B2 (en) 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
TWI433343B (zh) 2004-06-22 2014-04-01 維帝克股份有限公司 具有改良光輸出的垂直構造半導體裝置
US20060002442A1 (en) 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
WO2006065010A1 (en) 2004-12-13 2006-06-22 Lg Chem, Ltd. METHOD FOR MANUFACTURING G a N-BASED LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY
US7186580B2 (en) 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7413918B2 (en) 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US7432119B2 (en) 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
US7378288B2 (en) 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US7195944B2 (en) 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US20060151801A1 (en) 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
US20060154393A1 (en) 2005-01-11 2006-07-13 Doan Trung T Systems and methods for removing operating heat from a light emitting diode
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
EP1693891B1 (en) 2005-01-31 2019-07-31 IMEC vzw Method of manufacturing a semiconductor device
JP4980615B2 (ja) 2005-02-08 2012-07-18 ローム株式会社 半導体発光素子およびその製法
US7348212B2 (en) 2005-09-13 2008-03-25 Philips Lumileds Lighting Company Llc Interconnects for semiconductor light emitting devices
US20070029541A1 (en) 2005-08-04 2007-02-08 Huoping Xin High efficiency light emitting device
CN101263581B (zh) * 2005-09-16 2010-09-29 克里公司 其上有碳化硅功率器件的半导体晶圆的处理方法
SG130975A1 (en) 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
US7413980B2 (en) 2006-04-25 2008-08-19 Texas Instruments Incorporated Semiconductor device with improved contact fuse
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06310500A (ja) 1993-01-22 1994-11-04 Toshiba Corp 半導体装置の製造方法
US6420242B1 (en) * 1998-01-23 2002-07-16 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
EP1139409A3 (en) * 2000-02-29 2003-01-02 Agere Systems Guardian Corporation Selective laser anneal on semiconductor material
WO2005088743A1 (en) * 2004-03-15 2005-09-22 Tinggi Technologies Private Limited Fabrication of semiconductor devices

Also Published As

Publication number Publication date
CN101410991A (zh) 2009-04-15
SG133432A1 (en) 2007-07-30
KR20080096510A (ko) 2008-10-30
US8329556B2 (en) 2012-12-11
WO2007073354A1 (en) 2007-06-28
JP2009520376A (ja) 2009-05-21
US20100047996A1 (en) 2010-02-25

Similar Documents

Publication Publication Date Title
CN101410991B (zh) 半导体器件制造期间的局部退火
US4482393A (en) Method of activating implanted ions by incoherent light beam
JP5242145B2 (ja) 半導体装置の製造方法
KR100870777B1 (ko) 광 소스, 선택적 광 발생기, 전자기 방사선 생성 시스템 및방법
JP2013033953A (ja) 半導体層の欠陥を修復する方法
US8062738B2 (en) Heat transfer medium and heat transfer method using the same
JP2019522335A (ja) 赤外線パネル・ラジエータおよび赤外線パネル・ラジエータを生産するための方法
JP6012987B2 (ja) イメージセンサの製造方法
US8148192B2 (en) Transparent solar cell method of fabrication via float glass process
JP2001007039A5 (enExample)
CN101789365B (zh) 用于半导体衬底掺杂剂活化的rtp尖峰退火
US7759231B2 (en) Method for producing metal/semiconductor contacts through a dielectric
CN103038898A (zh) 用于对半导体基底进行掺杂的方法和具有两级掺杂的太阳能电池
KR20180093739A (ko) 로이유리 열처리 방법 및 시스템
JP2005167005A (ja) 半導体基板の熱処理方法、半導体装置の製造方法、及び熱処理装置
US8258043B2 (en) Manufacturing method of thin film semiconductor substrate
TW201137947A (en) Method for making a semiconductor device by laser irradiation
JPS61226916A (ja) 多結晶またはアモルファスの半導体材料を単結晶半導体材料に転化する方法
JPS6250971B2 (enExample)
JPH0479215A (ja) 半導体装置の製造方法
JP5331961B2 (ja) 青色発光部材の製造方法
KR101814763B1 (ko) 폴리실리콘 증착 방법 및 이를 위한 증착 장치
JP2004172331A (ja) 電気伝導性制御方法
KR20120025983A (ko) 반도체장치의 제조방법
JPS59124731A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110413

Termination date: 20191219

CF01 Termination of patent right due to non-payment of annual fee