CN101075479A - 具有低电流消耗特性的半导体存储装置 - Google Patents
具有低电流消耗特性的半导体存储装置 Download PDFInfo
- Publication number
- CN101075479A CN101075479A CNA2007101033144A CN200710103314A CN101075479A CN 101075479 A CN101075479 A CN 101075479A CN A2007101033144 A CNA2007101033144 A CN A2007101033144A CN 200710103314 A CN200710103314 A CN 200710103314A CN 101075479 A CN101075479 A CN 101075479A
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- CN
- China
- Prior art keywords
- state
- circuit
- power circuit
- signal
- semiconductor storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4067—Refresh in standby or low power modes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006139055 | 2006-05-18 | ||
JP2006139055A JP5261888B2 (ja) | 2006-05-18 | 2006-05-18 | 半導体記憶装置 |
JP2006-139055 | 2006-05-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101075479A true CN101075479A (zh) | 2007-11-21 |
CN101075479B CN101075479B (zh) | 2012-05-16 |
Family
ID=38330164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101033144A Expired - Fee Related CN101075479B (zh) | 2006-05-18 | 2007-05-18 | 具有低电流消耗特性的半导体存储装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7633825B2 (zh) |
EP (1) | EP1858026A1 (zh) |
JP (1) | JP5261888B2 (zh) |
KR (1) | KR100899517B1 (zh) |
CN (1) | CN101075479B (zh) |
TW (1) | TWI348703B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105280218A (zh) * | 2014-06-30 | 2016-01-27 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN105810233A (zh) * | 2014-12-31 | 2016-07-27 | 北京兆易创新科技股份有限公司 | 一种低功耗存储器的装置和方法 |
CN107195322A (zh) * | 2017-07-11 | 2017-09-22 | 高科创芯(北京)科技有限公司 | 一种基于忆阻器的动态电源管理系统 |
CN110905309A (zh) * | 2019-11-18 | 2020-03-24 | 北京新能源汽车股份有限公司 | 电子锁的控制系统、方法和车辆 |
CN115603713A (zh) * | 2022-12-01 | 2023-01-13 | 深圳市恒运昌真空技术有限公司(Cn) | 一种脉冲信号处理方法、装置及匹配电路 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7352649B2 (en) * | 2005-07-21 | 2008-04-01 | Micron Technology, Inc. | High speed array pipeline architecture |
JP5261888B2 (ja) | 2006-05-18 | 2013-08-14 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
JP5116787B2 (ja) * | 2009-03-05 | 2013-01-09 | 住友重機械工業株式会社 | ハイブリッド型作業機械 |
CN103971729B (zh) * | 2013-01-30 | 2016-12-28 | 旺宏电子股份有限公司 | 偏压提供电路、存储区段控制器与存储器电路 |
US10199090B2 (en) * | 2016-09-21 | 2019-02-05 | Apple Inc. | Low active power write driver with reduced-power boost circuit |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63106993A (ja) * | 1986-10-24 | 1988-05-12 | Hitachi Ltd | 半導体記憶装置 |
JPH03125394A (ja) * | 1989-10-09 | 1991-05-28 | Hitachi Micro Comput Eng Ltd | 半導体記憶装置 |
GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
JPH04129089A (ja) * | 1990-09-19 | 1992-04-30 | Mitsubishi Electric Corp | ダイナミック型半導体記憶装置 |
JPH05159572A (ja) * | 1991-12-04 | 1993-06-25 | Hitachi Ltd | 半導体装置 |
JPH07105682A (ja) * | 1993-10-06 | 1995-04-21 | Nec Corp | ダイナミックメモリ装置 |
JPH11288588A (ja) * | 1998-04-02 | 1999-10-19 | Mitsubishi Electric Corp | 半導体回路装置 |
JP4017248B2 (ja) * | 1998-04-10 | 2007-12-05 | 株式会社日立製作所 | 半導体装置 |
JP2001067867A (ja) * | 1999-08-31 | 2001-03-16 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP4271812B2 (ja) * | 2000-01-31 | 2009-06-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の内部電源電圧生成回路の制御方法、半導体記憶装置の内部電源電圧生成回路の制御方法及び半導体記憶装置の内部電源電圧生成回路 |
US6418075B2 (en) | 2000-07-21 | 2002-07-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor merged logic and memory capable of preventing an increase in an abnormal current during power-up |
US6381182B1 (en) * | 2000-09-13 | 2002-04-30 | Infineon Technologies Ag | Combined tracking of WLL and VPP low threshold voltage in DRAM array |
US6518834B2 (en) * | 2001-05-14 | 2003-02-11 | Semiconductor Components Industries Llc | Circuit and method for reducing leakage current within an electronic system |
JP2002367369A (ja) * | 2001-06-05 | 2002-12-20 | Nec Corp | 半導体記憶装置 |
US6515929B1 (en) * | 2001-10-29 | 2003-02-04 | Etron Technology, Inc. | Partial refresh feature in pseudo SRAM |
JP2003178584A (ja) * | 2001-12-07 | 2003-06-27 | Toshiba Corp | 電圧発生回路 |
JP4249412B2 (ja) * | 2001-12-27 | 2009-04-02 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
JP3959341B2 (ja) * | 2002-02-18 | 2007-08-15 | 株式会社東芝 | 半導体集積回路装置 |
KR100691485B1 (ko) * | 2003-07-29 | 2007-03-09 | 주식회사 하이닉스반도체 | 액티브 모드시에 전류소모를 줄일 수 있는 반도체 메모리장치 |
KR100534216B1 (ko) * | 2004-06-18 | 2005-12-08 | 삼성전자주식회사 | 반도체 메모리에서의 워드라인 드라이버 회로 및 그에따른 구동방법 |
JP4330516B2 (ja) * | 2004-08-04 | 2009-09-16 | パナソニック株式会社 | 半導体記憶装置 |
JP4255082B2 (ja) * | 2005-06-27 | 2009-04-15 | 富士通マイクロエレクトロニクス株式会社 | 電圧供給回路および半導体メモリ |
JP5261888B2 (ja) | 2006-05-18 | 2013-08-14 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
-
2006
- 2006-05-18 JP JP2006139055A patent/JP5261888B2/ja not_active Expired - Fee Related
-
2007
- 2007-05-11 TW TW096116870A patent/TWI348703B/zh not_active IP Right Cessation
- 2007-05-14 EP EP07108186A patent/EP1858026A1/en not_active Withdrawn
- 2007-05-15 US US11/798,629 patent/US7633825B2/en not_active Expired - Fee Related
- 2007-05-17 KR KR1020070048041A patent/KR100899517B1/ko active IP Right Grant
- 2007-05-18 CN CN2007101033144A patent/CN101075479B/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105280218A (zh) * | 2014-06-30 | 2016-01-27 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN105280218B (zh) * | 2014-06-30 | 2020-08-11 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN105810233A (zh) * | 2014-12-31 | 2016-07-27 | 北京兆易创新科技股份有限公司 | 一种低功耗存储器的装置和方法 |
CN105810233B (zh) * | 2014-12-31 | 2018-05-15 | 北京兆易创新科技股份有限公司 | 一种低功耗存储器的装置和方法 |
CN107195322A (zh) * | 2017-07-11 | 2017-09-22 | 高科创芯(北京)科技有限公司 | 一种基于忆阻器的动态电源管理系统 |
CN110905309A (zh) * | 2019-11-18 | 2020-03-24 | 北京新能源汽车股份有限公司 | 电子锁的控制系统、方法和车辆 |
CN115603713A (zh) * | 2022-12-01 | 2023-01-13 | 深圳市恒运昌真空技术有限公司(Cn) | 一种脉冲信号处理方法、装置及匹配电路 |
Also Published As
Publication number | Publication date |
---|---|
JP2007310963A (ja) | 2007-11-29 |
EP1858026A1 (en) | 2007-11-21 |
TW200744101A (en) | 2007-12-01 |
JP5261888B2 (ja) | 2013-08-14 |
US20070268769A1 (en) | 2007-11-22 |
US7633825B2 (en) | 2009-12-15 |
CN101075479B (zh) | 2012-05-16 |
KR20070112018A (ko) | 2007-11-22 |
KR100899517B1 (ko) | 2009-05-27 |
TWI348703B (en) | 2011-09-11 |
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Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20081107 Address after: Tokyo, Japan, Japan Applicant after: Fujitsu Microelectronics Ltd. Address before: Kawasaki, Kanagawa, Japan Applicant before: Fujitsu Ltd. |
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Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150515 |
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Effective date of registration: 20150515 Address after: Kanagawa Patentee after: Co., Ltd. Suo Si future Address before: Yokohama City, Kanagawa Prefecture, Japan Patentee before: Fujitsu Semiconductor Co., Ltd. |
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