CN101055842B - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
- Publication number
- CN101055842B CN101055842B CN200710104006.3A CN200710104006A CN101055842B CN 101055842 B CN101055842 B CN 101055842B CN 200710104006 A CN200710104006 A CN 200710104006A CN 101055842 B CN101055842 B CN 101055842B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- region
- semiconductor device
- film
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims description 65
- 239000012535 impurity Substances 0.000 claims abstract description 78
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 37
- 238000002347 injection Methods 0.000 claims abstract description 9
- 239000007924 injection Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 123
- 239000000758 substrate Substances 0.000 claims description 60
- 238000002513 implantation Methods 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 230000008676 import Effects 0.000 claims description 3
- 229940090044 injection Drugs 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 70
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 68
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 54
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 54
- 150000002500 ions Chemical class 0.000 abstract description 14
- 230000009467 reduction Effects 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 44
- 229910052710 silicon Inorganic materials 0.000 description 44
- 239000010703 silicon Substances 0.000 description 44
- 230000008569 process Effects 0.000 description 36
- 239000000463 material Substances 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 238000009413 insulation Methods 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000007943 implant Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 229910052787 antimony Inorganic materials 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- -1 as etching mask Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003143438A JP4578785B2 (ja) | 2003-05-21 | 2003-05-21 | 半導体装置の製造方法 |
JP143438/2003 | 2003-05-21 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100082351A Division CN1324687C (zh) | 2003-05-21 | 2004-02-27 | 半导体装置的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101055842A CN101055842A (zh) | 2007-10-17 |
CN101055842B true CN101055842B (zh) | 2014-09-17 |
Family
ID=33447507
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710104006.3A Expired - Fee Related CN101055842B (zh) | 2003-05-21 | 2004-02-27 | 半导体装置的制造方法 |
CNB2004100082351A Expired - Fee Related CN1324687C (zh) | 2003-05-21 | 2004-02-27 | 半导体装置的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100082351A Expired - Fee Related CN1324687C (zh) | 2003-05-21 | 2004-02-27 | 半导体装置的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (4) | US6998319B2 (zh) |
JP (1) | JP4578785B2 (zh) |
KR (1) | KR100533553B1 (zh) |
CN (2) | CN101055842B (zh) |
DE (1) | DE102004009597A1 (zh) |
TW (1) | TWI265590B (zh) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100414872B1 (ko) * | 2001-08-29 | 2004-01-13 | 주식회사 하이닉스반도체 | 반도체소자 및 그 제조 방법 |
US7151040B2 (en) * | 2004-08-31 | 2006-12-19 | Micron Technology, Inc. | Methods for increasing photo alignment margins |
US7910288B2 (en) | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
US7115525B2 (en) * | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
US7655387B2 (en) | 2004-09-02 | 2010-02-02 | Micron Technology, Inc. | Method to align mask patterns |
US7253118B2 (en) | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
US7390746B2 (en) | 2005-03-15 | 2008-06-24 | Micron Technology, Inc. | Multiple deposition for integration of spacers in pitch multiplication process |
US7611944B2 (en) | 2005-03-28 | 2009-11-03 | Micron Technology, Inc. | Integrated circuit fabrication |
US7371627B1 (en) | 2005-05-13 | 2008-05-13 | Micron Technology, Inc. | Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines |
US7120046B1 (en) | 2005-05-13 | 2006-10-10 | Micron Technology, Inc. | Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines |
US7429536B2 (en) * | 2005-05-23 | 2008-09-30 | Micron Technology, Inc. | Methods for forming arrays of small, closely spaced features |
US7560390B2 (en) | 2005-06-02 | 2009-07-14 | Micron Technology, Inc. | Multiple spacer steps for pitch multiplication |
US7396781B2 (en) | 2005-06-09 | 2008-07-08 | Micron Technology, Inc. | Method and apparatus for adjusting feature size and position |
US7888721B2 (en) | 2005-07-06 | 2011-02-15 | Micron Technology, Inc. | Surround gate access transistors with grown ultra-thin bodies |
US7768051B2 (en) | 2005-07-25 | 2010-08-03 | Micron Technology, Inc. | DRAM including a vertical surround gate transistor |
US7413981B2 (en) * | 2005-07-29 | 2008-08-19 | Micron Technology, Inc. | Pitch doubled circuit layout |
US8123968B2 (en) | 2005-08-25 | 2012-02-28 | Round Rock Research, Llc | Multiple deposition for integration of spacers in pitch multiplication process |
US7816262B2 (en) | 2005-08-30 | 2010-10-19 | Micron Technology, Inc. | Method and algorithm for random half pitched interconnect layout with constant spacing |
US7322138B2 (en) * | 2005-08-31 | 2008-01-29 | Southern Imperial, Inc. | Shelf edge sign holder |
US7829262B2 (en) * | 2005-08-31 | 2010-11-09 | Micron Technology, Inc. | Method of forming pitch multipled contacts |
US7696567B2 (en) | 2005-08-31 | 2010-04-13 | Micron Technology, Inc | Semiconductor memory device |
US7759197B2 (en) | 2005-09-01 | 2010-07-20 | Micron Technology, Inc. | Method of forming isolated features using pitch multiplication |
US7393789B2 (en) | 2005-09-01 | 2008-07-01 | Micron Technology, Inc. | Protective coating for planarization |
US7557032B2 (en) | 2005-09-01 | 2009-07-07 | Micron Technology, Inc. | Silicided recessed silicon |
US7572572B2 (en) | 2005-09-01 | 2009-08-11 | Micron Technology, Inc. | Methods for forming arrays of small, closely spaced features |
US7416943B2 (en) | 2005-09-01 | 2008-08-26 | Micron Technology, Inc. | Peripheral gate stacks and recessed array gates |
US7687342B2 (en) | 2005-09-01 | 2010-03-30 | Micron Technology, Inc. | Method of manufacturing a memory device |
US7776744B2 (en) | 2005-09-01 | 2010-08-17 | Micron Technology, Inc. | Pitch multiplication spacers and methods of forming the same |
US7476933B2 (en) | 2006-03-02 | 2009-01-13 | Micron Technology, Inc. | Vertical gated access transistor |
US7842558B2 (en) | 2006-03-02 | 2010-11-30 | Micron Technology, Inc. | Masking process for simultaneously patterning separate regions |
US7902074B2 (en) | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US8003310B2 (en) * | 2006-04-24 | 2011-08-23 | Micron Technology, Inc. | Masking techniques and templates for dense semiconductor fabrication |
US7488685B2 (en) | 2006-04-25 | 2009-02-10 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
US7795149B2 (en) | 2006-06-01 | 2010-09-14 | Micron Technology, Inc. | Masking techniques and contact imprint reticles for dense semiconductor fabrication |
US7723009B2 (en) | 2006-06-02 | 2010-05-25 | Micron Technology, Inc. | Topography based patterning |
US7611980B2 (en) | 2006-08-30 | 2009-11-03 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
US7666578B2 (en) * | 2006-09-14 | 2010-02-23 | Micron Technology, Inc. | Efficient pitch multiplication process |
US8129289B2 (en) | 2006-10-05 | 2012-03-06 | Micron Technology, Inc. | Method to deposit conformal low temperature SiO2 |
JP5264237B2 (ja) * | 2007-05-15 | 2013-08-14 | キヤノン株式会社 | ナノ構造体およびナノ構造体の製造方法 |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8563229B2 (en) | 2007-07-31 | 2013-10-22 | Micron Technology, Inc. | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures |
CN101373326B (zh) * | 2007-08-24 | 2012-01-18 | 南亚科技股份有限公司 | 光掩模 |
US7737039B2 (en) | 2007-11-01 | 2010-06-15 | Micron Technology, Inc. | Spacer process for on pitch contacts and related structures |
US7659208B2 (en) | 2007-12-06 | 2010-02-09 | Micron Technology, Inc | Method for forming high density patterns |
US7790531B2 (en) | 2007-12-18 | 2010-09-07 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
JP2009158622A (ja) * | 2007-12-25 | 2009-07-16 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US8030218B2 (en) | 2008-03-21 | 2011-10-04 | Micron Technology, Inc. | Method for selectively modifying spacing between pitch multiplied structures |
US8076208B2 (en) | 2008-07-03 | 2011-12-13 | Micron Technology, Inc. | Method for forming transistor with high breakdown voltage using pitch multiplication technique |
US8492282B2 (en) | 2008-11-24 | 2013-07-23 | Micron Technology, Inc. | Methods of forming a masking pattern for integrated circuits |
JP5591016B2 (ja) * | 2010-08-09 | 2014-09-17 | ルネサスエレクトロニクス株式会社 | 半導体装置、及び半導体装置の製造方法 |
CN102832133B (zh) * | 2012-08-29 | 2014-12-03 | 北京大学 | 在体硅上制备独立双栅FinFET的方法 |
KR102115552B1 (ko) * | 2014-01-28 | 2020-05-27 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9515172B2 (en) * | 2014-01-28 | 2016-12-06 | Samsung Electronics Co., Ltd. | Semiconductor devices having isolation insulating layers and methods of manufacturing the same |
US9461045B1 (en) | 2015-06-25 | 2016-10-04 | Micron Technology, Inc. | Semiconductor devices |
CN108665924B (zh) * | 2018-05-09 | 2021-03-02 | 上海交通大学 | 阵列化硅基可编程光存储芯片 |
US10734489B2 (en) * | 2018-07-31 | 2020-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor device structure with metal silicide layer |
CN113078057B (zh) * | 2021-03-23 | 2022-09-23 | 长鑫存储技术有限公司 | 半导体结构及其制作方法 |
US11710642B2 (en) | 2021-03-23 | 2023-07-25 | Changxin Memory Technologies, Inc. | Semiconductor structure and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5677217A (en) * | 1996-08-01 | 1997-10-14 | Vanguard International Semiconductor Corporation | Method for fabricating a mosfet device, with local channel doping and a titanium silicide gate |
US6040208A (en) * | 1997-08-29 | 2000-03-21 | Micron Technology, Inc. | Angled ion implantation for selective doping |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597824A (en) * | 1983-11-11 | 1986-07-01 | Kabushiki Kaisha Toshiba | Method of producing semiconductor device |
US4845047A (en) * | 1987-06-25 | 1989-07-04 | Texas Instruments Incorporated | Threshold adjustment method for an IGFET |
US5364810A (en) * | 1992-07-28 | 1994-11-15 | Motorola, Inc. | Methods of forming a vertical field-effect transistor and a semiconductor memory cell |
JPH0778988A (ja) * | 1993-09-09 | 1995-03-20 | Nec Corp | 半導体装置の製造方法 |
JPH07122741A (ja) * | 1993-10-21 | 1995-05-12 | Hitachi Ltd | 半導体装置の製造方法 |
US5643822A (en) | 1995-01-10 | 1997-07-01 | International Business Machines Corporation | Method for forming trench-isolated FET devices |
JPH09237829A (ja) | 1996-03-01 | 1997-09-09 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH09307102A (ja) * | 1996-05-15 | 1997-11-28 | Denso Corp | 半導体装置 |
JPH1065153A (ja) | 1996-08-15 | 1998-03-06 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP3638778B2 (ja) * | 1997-03-31 | 2005-04-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
JP2000114469A (ja) * | 1998-10-08 | 2000-04-21 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6162693A (en) * | 1999-09-02 | 2000-12-19 | Micron Technology, Inc. | Channel implant through gate polysilicon |
JP2002009173A (ja) * | 2000-06-26 | 2002-01-11 | Toshiba Corp | 半導体装置の製造方法 |
KR100327348B1 (en) * | 2000-07-26 | 2002-03-06 | Samsung Electronics Co Ltd | Semiconductor capable of decreasing junction leakage current and narrow width effect and fabricating method thereof |
JP2002083941A (ja) * | 2000-09-06 | 2002-03-22 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP4832629B2 (ja) * | 2000-10-04 | 2011-12-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4039854B2 (ja) | 2000-12-28 | 2008-01-30 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2002299475A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004063527A (ja) * | 2002-07-25 | 2004-02-26 | Elpida Memory Inc | 半導体記憶装置およびその製造方法 |
JP2004207457A (ja) * | 2002-12-25 | 2004-07-22 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
-
2003
- 2003-05-21 JP JP2003143438A patent/JP4578785B2/ja not_active Expired - Fee Related
- 2003-12-09 US US10/730,099 patent/US6998319B2/en not_active Expired - Fee Related
- 2003-12-16 TW TW092135531A patent/TWI265590B/zh not_active IP Right Cessation
- 2003-12-18 KR KR10-2003-0093271A patent/KR100533553B1/ko not_active IP Right Cessation
-
2004
- 2004-02-27 CN CN200710104006.3A patent/CN101055842B/zh not_active Expired - Fee Related
- 2004-02-27 CN CNB2004100082351A patent/CN1324687C/zh not_active Expired - Fee Related
- 2004-02-27 DE DE102004009597A patent/DE102004009597A1/de not_active Withdrawn
-
2005
- 2005-12-02 US US11/292,360 patent/US7244655B2/en not_active Expired - Lifetime
-
2007
- 2007-06-25 US US11/767,734 patent/US7691713B2/en not_active Expired - Fee Related
-
2010
- 2010-04-05 US US12/754,097 patent/US20100190306A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5677217A (en) * | 1996-08-01 | 1997-10-14 | Vanguard International Semiconductor Corporation | Method for fabricating a mosfet device, with local channel doping and a titanium silicide gate |
US6040208A (en) * | 1997-08-29 | 2000-03-21 | Micron Technology, Inc. | Angled ion implantation for selective doping |
Non-Patent Citations (1)
Title |
---|
JP平9-237829A 1997.09.09 |
Also Published As
Publication number | Publication date |
---|---|
US20060079061A1 (en) | 2006-04-13 |
US7691713B2 (en) | 2010-04-06 |
JP2004349393A (ja) | 2004-12-09 |
US7244655B2 (en) | 2007-07-17 |
KR20040100830A (ko) | 2004-12-02 |
DE102004009597A1 (de) | 2004-12-30 |
CN1324687C (zh) | 2007-07-04 |
CN101055842A (zh) | 2007-10-17 |
US20040235255A1 (en) | 2004-11-25 |
TWI265590B (en) | 2006-11-01 |
US6998319B2 (en) | 2006-02-14 |
CN1574296A (zh) | 2005-02-02 |
KR100533553B1 (ko) | 2005-12-06 |
US20100190306A1 (en) | 2010-07-29 |
US20070243687A1 (en) | 2007-10-18 |
TW200426978A (en) | 2004-12-01 |
JP4578785B2 (ja) | 2010-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101055842B (zh) | 半导体装置的制造方法 | |
CN1300841C (zh) | 制造半导体集成电路的方法及由此制造的半导体集成电路 | |
US7728373B2 (en) | DRAM device with cell epitaxial layers partially overlap buried cell gate electrode | |
CN109801880B (zh) | 动态随机存取存储器的埋入式字符线及其制作方法 | |
CN101326632B (zh) | 半导体器件及其制造方法 | |
TWI720350B (zh) | 分柵式非揮發性記憶體及其製備方法 | |
CN108807384B (zh) | 半导体元件及其制作方法 | |
TW201413797A (zh) | Mos電晶體及其形成方法 | |
CN110310926B (zh) | 解决sram单元器件金属硅化物缺陷形成的方法 | |
US6306760B1 (en) | Method of forming a self-aligned contact hole on a semiconductor wafer | |
KR100951272B1 (ko) | 반도체 집적 회로 장치의 제조 방법 | |
US20070034932A1 (en) | NOR flash memory devices and methods of fabricating the same | |
JP2009141286A (ja) | 半導体装置及び半導体装置の製造方法 | |
KR100341182B1 (ko) | 반도체소자의 모스 트랜지스터 형성방법 | |
CN101764098A (zh) | 在同一晶片上的集成的各种晶体管 | |
KR20100055107A (ko) | 숏 채널 효과가 개선된 반도체 장치의 제조방법 | |
KR100709433B1 (ko) | 반도체 소자의 제조 방법 | |
US20150348973A1 (en) | Semiconductor integrated circuit (ic) device and method of manufacturing the same | |
US7977723B2 (en) | Semiconductor device | |
KR101099562B1 (ko) | 반도체 소자의 제조방법 | |
KR100598331B1 (ko) | 복합 반도체 소자 및 그 제조방법 | |
KR100976673B1 (ko) | 플래시 메모리 소자 및 그 제조방법 | |
KR20060077065A (ko) | 시스템온칩소자 및 그의 제조 방법 | |
KR20070105730A (ko) | 반도체 소자의 제조 방법 | |
JP2000323681A (ja) | 半導体集積回路装置の製造方法および半導体集積回路装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20100925 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20100925 Address after: Kawasaki, Kanagawa, Japan Applicant after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Applicant before: Renesas Technology Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Renesas Electronics Corporation Address before: Kawasaki, Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140917 Termination date: 20190227 |