CN101032014A - 用于微电子和微系统的新结构以及制造方法 - Google Patents

用于微电子和微系统的新结构以及制造方法 Download PDF

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Publication number
CN101032014A
CN101032014A CNA200580033080XA CN200580033080A CN101032014A CN 101032014 A CN101032014 A CN 101032014A CN A200580033080X A CNA200580033080X A CN A200580033080XA CN 200580033080 A CN200580033080 A CN 200580033080A CN 101032014 A CN101032014 A CN 101032014A
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CN
China
Prior art keywords
layer
etch rate
surface layer
buried layer
buried
Prior art date
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Pending
Application number
CNA200580033080XA
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English (en)
Chinese (zh)
Inventor
贝尔纳·阿斯帕尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soi Teker Isolator Silicon Technology
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Tracit Technologies SA
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Filing date
Publication date
Application filed by Tracit Technologies SA filed Critical Tracit Technologies SA
Publication of CN101032014A publication Critical patent/CN101032014A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1922—Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Weting (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Silicon Polymers (AREA)
  • Inorganic Insulating Materials (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
CNA200580033080XA 2004-09-30 2005-09-27 用于微电子和微系统的新结构以及制造方法 Pending CN101032014A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0452217A FR2875947B1 (fr) 2004-09-30 2004-09-30 Nouvelle structure pour microelectronique et microsysteme et procede de realisation
FR0452217 2004-09-30
US60/673,801 2005-04-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210058695XA Division CN102637626A (zh) 2004-09-30 2005-09-27 用于微电子和微系统的结构的制造方法

Publications (1)

Publication Number Publication Date
CN101032014A true CN101032014A (zh) 2007-09-05

Family

ID=34952707

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA200580033080XA Pending CN101032014A (zh) 2004-09-30 2005-09-27 用于微电子和微系统的新结构以及制造方法
CN201210058695XA Pending CN102637626A (zh) 2004-09-30 2005-09-27 用于微电子和微系统的结构的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201210058695XA Pending CN102637626A (zh) 2004-09-30 2005-09-27 用于微电子和微系统的结构的制造方法

Country Status (9)

Country Link
US (2) US20080036039A1 (https=)
EP (1) EP1794789B1 (https=)
JP (3) JP2008514441A (https=)
KR (1) KR100860546B1 (https=)
CN (2) CN101032014A (https=)
AT (1) ATE492029T1 (https=)
DE (1) DE602005025375D1 (https=)
FR (1) FR2875947B1 (https=)
WO (1) WO2006035031A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104756233A (zh) * 2012-10-22 2015-07-01 夏普株式会社 半导体器件的制造方法
CN104944361B (zh) * 2014-03-25 2016-05-18 中芯国际集成电路制造(北京)有限公司 一种mems器件的制作方法
CN105895575A (zh) * 2016-05-09 2016-08-24 中国科学院上海微系统与信息技术研究所 一种图形化绝缘体上硅衬底材料及其制备方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2876220B1 (fr) * 2004-10-06 2007-09-28 Commissariat Energie Atomique Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees.
US20060276008A1 (en) * 2005-06-02 2006-12-07 Vesa-Pekka Lempinen Thinning
FR2897982B1 (fr) * 2006-02-27 2008-07-11 Tracit Technologies Sa Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat
FR2932789B1 (fr) 2008-06-23 2011-04-15 Commissariat Energie Atomique Procede de fabrication d'une structure electromecanique comportant au moins un pilier de renfort mecanique.
FR2932788A1 (fr) 2008-06-23 2009-12-25 Commissariat Energie Atomique Procede de fabrication d'un composant electromecanique mems / nems.
FR2932923B1 (fr) 2008-06-23 2011-03-25 Commissariat Energie Atomique Substrat heterogene comportant une couche sacrificielle et son procede de realisation.
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8637381B2 (en) * 2011-10-17 2014-01-28 International Business Machines Corporation High-k dielectric and silicon nitride box region
CN104507853B (zh) 2012-07-31 2016-11-23 索泰克公司 形成半导体设备的方法
CN106348245B (zh) * 2015-07-23 2018-02-06 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制备方法、电子装置
CN108190828B (zh) * 2018-02-07 2024-08-13 北京先通康桥医药科技有限公司 Mems传感器线阵、触诊探头及其制造方法
CN108682661A (zh) * 2018-04-17 2018-10-19 中芯集成电路（宁波）有限公司 一种soi基底及soi基底的形成方法
FR3086096B1 (fr) 2018-09-14 2021-08-27 Soitec Silicon On Insulator Procede de realisation d'un substrat avance pour une integration hybride
FR3091032B1 (fr) * 2018-12-20 2020-12-11 Soitec Silicon On Insulator Procédé de transfert d’une couche superficielle sur des cavités
US10981780B2 (en) 2019-08-19 2021-04-20 Infineon Technologies Ag Membrane support for dual backplate transducers
DE102021213259A1 (de) 2021-11-25 2023-05-25 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Cavity SOI Substrats und mikromechanischen Strukturen darin

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184843A (ja) 1985-02-13 1986-08-18 Toshiba Corp 複合半導体装置とその製造方法
FR2579809B1 (fr) * 1985-04-02 1987-05-15 Thomson Csf Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede
NL8800847A (nl) * 1988-04-05 1989-11-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een soi-struktuur.
US4956314A (en) * 1989-05-30 1990-09-11 Motorola, Inc. Differential etching of silicon nitride
JPH088231B2 (ja) * 1989-10-02 1996-01-29 大日本スクリーン製造株式会社 絶縁膜の選択的除去方法
JPH0476951A (ja) * 1990-07-18 1992-03-11 Fujitsu Ltd 半導体装置の製造方法および半導体装置
US5376233A (en) * 1992-02-10 1994-12-27 Texas Instruments Incorporated Method for selectively etching oxides
JP3367113B2 (ja) * 1992-04-27 2003-01-14 株式会社デンソー 加速度センサ
JPH06302834A (ja) * 1993-04-09 1994-10-28 Fujikura Ltd 薄膜構造の製造方法
US5393692A (en) * 1993-07-28 1995-02-28 Taiwan Semiconductor Manufacturing Company Recessed side-wall poly plugged local oxidation
JP3181174B2 (ja) * 1994-06-08 2001-07-03 キヤノン株式会社 マイクロ構造体の形成方法
US5658698A (en) * 1994-01-31 1997-08-19 Canon Kabushiki Kaisha Microstructure, process for manufacturing thereof and devices incorporating the same
US5466630A (en) * 1994-03-21 1995-11-14 United Microelectronics Corp. Silicon-on-insulator technique with buried gap
JPH08105748A (ja) * 1994-10-06 1996-04-23 Murata Mfg Co Ltd 角速度センサ、その共振周波数調整方法及びその製造方法
JP3182301B2 (ja) * 1994-11-07 2001-07-03 キヤノン株式会社 マイクロ構造体及びその形成法
JP3430771B2 (ja) * 1996-02-05 2003-07-28 株式会社デンソー 半導体力学量センサの製造方法
JPH10290036A (ja) * 1997-04-11 1998-10-27 Nissan Motor Co Ltd 表面マイクロマシンの製造方法
JPH1131825A (ja) * 1997-07-10 1999-02-02 Denso Corp 半導体力学量センサの製造方法
US6191007B1 (en) * 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
JP4144047B2 (ja) * 1997-08-20 2008-09-03 株式会社デンソー 半導体基板の製造方法
US5976945A (en) 1997-11-20 1999-11-02 Vanguard International Semiconductor Corporation Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor
US5972758A (en) * 1997-12-04 1999-10-26 Intel Corporation Pedestal isolated junction structure and method of manufacture
JP4032476B2 (ja) * 1997-12-25 2008-01-16 日産自動車株式会社 微小装置の製造方法
JP3424550B2 (ja) * 1998-04-13 2003-07-07 株式会社デンソー 半導体力学量センサの製造方法
US6713235B1 (en) * 1999-03-30 2004-03-30 Citizen Watch Co., Ltd. Method for fabricating thin-film substrate and thin-film substrate fabricated by the method
US6335292B1 (en) * 1999-04-15 2002-01-01 Micron Technology, Inc. Method of controlling striations and CD loss in contact oxide etch
FR2795554B1 (fr) * 1999-06-28 2003-08-22 France Telecom Procede de gravure laterale par trous pour fabriquer des dis positifs semi-conducteurs
WO2001006564A1 (fr) * 1999-07-15 2001-01-25 Shin-Etsu Handotai Co., Ltd. Procede de production d'une plaquette encollee et plaquette encollee
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
US6372657B1 (en) * 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
DE10064494A1 (de) * 2000-12-22 2002-07-04 Bosch Gmbh Robert Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist
DE10124038A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung vergrabener Bereiche
US6835633B2 (en) * 2002-07-24 2004-12-28 International Business Machines Corporation SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layer
EP1535297B1 (en) * 2002-08-26 2008-03-05 International Business Machines Corporation Diaphragm activated micro-electromechanical switch
EP1396883A3 (en) * 2002-09-04 2005-11-30 Canon Kabushiki Kaisha Substrate and manufacturing method therefor
FR2847077B1 (fr) * 2002-11-12 2006-02-17 Soitec Silicon On Insulator Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation
JP4007172B2 (ja) * 2002-12-03 2007-11-14 ソニー株式会社 マイクロマシンおよびその製造方法
WO2004059725A1 (fr) * 2002-12-20 2004-07-15 S.O.I. Tec Silicon On Insulator Technologies Procede de realisation de cavites dans une plaque de silicium
FR2849269B1 (fr) * 2002-12-20 2005-07-29 Soitec Silicon On Insulator Procede de realisation de cavites dans une plaque de silicium
FR2850487B1 (fr) * 2002-12-24 2005-12-09 Commissariat Energie Atomique Procede de realisation de substrats mixtes et structure ainsi obtenue
KR100546855B1 (ko) * 2002-12-28 2006-01-25 동부아남반도체 주식회사 반도체 소자의 제조 방법
JP4238724B2 (ja) * 2003-03-27 2009-03-18 株式会社デンソー 半導体装置
JP2004319538A (ja) * 2003-04-10 2004-11-11 Seiko Epson Corp 半導体装置の製造方法、集積回路、電子光学装置及び電子機器
US6936491B2 (en) * 2003-06-04 2005-08-30 Robert Bosch Gmbh Method of fabricating microelectromechanical systems and devices having trench isolated contacts
US6936522B2 (en) * 2003-06-26 2005-08-30 International Business Machines Corporation Selective silicon-on-insulator isolation structure and method
FR2876220B1 (fr) * 2004-10-06 2007-09-28 Commissariat Energie Atomique Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104756233A (zh) * 2012-10-22 2015-07-01 夏普株式会社 半导体器件的制造方法
CN104944361B (zh) * 2014-03-25 2016-05-18 中芯国际集成电路制造(北京)有限公司 一种mems器件的制作方法
CN105895575A (zh) * 2016-05-09 2016-08-24 中国科学院上海微系统与信息技术研究所 一种图形化绝缘体上硅衬底材料及其制备方法
CN105895575B (zh) * 2016-05-09 2018-09-25 中国科学院上海微系统与信息技术研究所 一种图形化绝缘体上硅衬底材料及其制备方法

Also Published As

Publication number Publication date
WO2006035031A1 (en) 2006-04-06
CN102637626A (zh) 2012-08-15
JP2011098435A (ja) 2011-05-19
EP1794789B1 (en) 2010-12-15
JP2011098434A (ja) 2011-05-19
KR100860546B1 (ko) 2008-09-26
JP2008514441A (ja) 2008-05-08
FR2875947A1 (fr) 2006-03-31
FR2875947B1 (fr) 2007-09-07
KR20070046202A (ko) 2007-05-02
EP1794789A1 (en) 2007-06-13
ATE492029T1 (de) 2011-01-15
DE602005025375D1 (de) 2011-01-27
US20080036039A1 (en) 2008-02-14
US20130012024A1 (en) 2013-01-10

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