CN101030448B - 半导体存储器件及半导体集成电路系统 - Google Patents

半导体存储器件及半导体集成电路系统 Download PDF

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Publication number
CN101030448B
CN101030448B CN2007100861195A CN200710086119A CN101030448B CN 101030448 B CN101030448 B CN 101030448B CN 2007100861195 A CN2007100861195 A CN 2007100861195A CN 200710086119 A CN200710086119 A CN 200710086119A CN 101030448 B CN101030448 B CN 101030448B
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mentioned
resistance
memory element
type memory
potential
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CN101030448A (zh
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白滨政则
县泰宏
山本安卫
菊川博仁
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Nuvoton Technology Corp Japan
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Matsushita Electric Industrial Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2227—Standby or low power modes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CN2007100861195A 2006-03-01 2007-03-01 半导体存储器件及半导体集成电路系统 Active CN101030448B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006055110A JP2007234133A (ja) 2006-03-01 2006-03-01 半導体記憶装置及び半導体集積回路システム
JP055110/2006 2006-03-01

Related Child Applications (1)

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CN201110219399.9A Division CN102354529B (zh) 2006-03-01 2007-03-01 半导体存储器件

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CN101030448A CN101030448A (zh) 2007-09-05
CN101030448B true CN101030448B (zh) 2011-09-07

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CN201110219399.9A Active CN102354529B (zh) 2006-03-01 2007-03-01 半导体存储器件

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US (1) US7518903B2 (https=)
JP (1) JP2007234133A (https=)
CN (2) CN101030448B (https=)

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JP5159224B2 (ja) * 2007-09-21 2013-03-06 株式会社東芝 抵抗変化メモリ装置
KR100895387B1 (ko) * 2007-10-16 2009-04-30 주식회사 하이닉스반도체 상 변화 메모리 장치
WO2009084514A1 (ja) * 2007-12-27 2009-07-09 Nec Corporation 記憶素子、半導体記憶装置、および情報読み出し方法
EP2107571B1 (en) 2008-04-03 2012-04-25 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR101453969B1 (ko) * 2008-07-31 2014-10-22 삼성전자주식회사 저항성 메모리 장치 및 그것의 쓰기 방법
WO2010038565A1 (ja) * 2008-09-30 2010-04-08 日本電気株式会社 磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの動作方法
JP5287197B2 (ja) * 2008-12-09 2013-09-11 ソニー株式会社 半導体装置
JP2010157567A (ja) * 2008-12-26 2010-07-15 Funai Electric Advanced Applied Technology Research Institute Inc メモリセルアレイ
JP5549105B2 (ja) * 2009-04-15 2014-07-16 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
KR101057724B1 (ko) * 2009-05-13 2011-08-18 주식회사 하이닉스반도체 반도체 메모리 장치와 그의 구동 방법
CN102117644B (zh) * 2009-12-30 2013-09-11 中国科学院微电子研究所 一种存储器读出电路
JP5521850B2 (ja) * 2010-07-21 2014-06-18 ソニー株式会社 抵抗変化型メモリデバイスおよびその駆動方法
KR101736383B1 (ko) 2010-08-03 2017-05-30 삼성전자주식회사 메모리 장치, 이의 프리차지 제어 방법, 및 이를 포함하는 장치들
CN101916590B (zh) * 2010-08-19 2013-01-09 中国科学院上海微系统与信息技术研究所 相变存储器的数据读出方法及读出电路
CN101976578B (zh) * 2010-10-09 2013-10-02 中国科学院上海微系统与信息技术研究所 相变存储单元的数据读出电路及读出方法
CN102479546B (zh) * 2010-11-30 2014-05-14 中国科学院微电子研究所 一种对电阻存储器进行编程的电路
JP5998059B2 (ja) * 2011-02-01 2016-09-28 パナソニック株式会社 不揮発性半導体記憶装置
KR20120097998A (ko) * 2011-02-28 2012-09-05 에스케이하이닉스 주식회사 집적 회로
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JP5642649B2 (ja) 2011-10-07 2014-12-17 シャープ株式会社 半導体記憶装置及び半導体装置
KR101813182B1 (ko) * 2011-11-16 2017-12-29 삼성전자주식회사 비휘발성 메모리 소자를 포함하는 다치 논리 장치
WO2013179593A1 (ja) * 2012-05-29 2013-12-05 パナソニック株式会社 半導体記憶装置および半導体記憶装置を搭載した半導体装置
JP2014017042A (ja) * 2012-07-11 2014-01-30 Toppan Printing Co Ltd 不揮発性メモリセル、不揮発性メモリセルアレイおよび不揮発性メモリ
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JP2014229758A (ja) * 2013-05-22 2014-12-08 ソニー株式会社 半導体装置およびその製造方法
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CN105702290B (zh) * 2014-11-25 2019-08-30 亿而得微电子股份有限公司 低成本电子抹除式可复写只读存储器数组的操作方法
CN106033679B (zh) * 2015-03-12 2019-03-08 华邦电子股份有限公司 电阻式存储器及量测该电阻式存储器的量测系统
US9728253B2 (en) * 2015-11-30 2017-08-08 Windbond Electronics Corp. Sense circuit for RRAM
KR102514045B1 (ko) * 2016-04-21 2023-03-24 삼성전자주식회사 저항성 메모리 장치 및 이를 포함하는 메모리 시스템
KR102570472B1 (ko) * 2017-01-10 2023-08-25 에스케이하이닉스 주식회사 반도체 장치
US9882566B1 (en) * 2017-01-10 2018-01-30 Ememory Technology Inc. Driving circuit for non-volatile memory
CN110226203B (zh) * 2017-01-20 2022-12-09 合肥睿科微电子有限公司 Rram写入
US10236053B1 (en) * 2017-10-17 2019-03-19 R&D 3 Llc Method and circuit device incorporating time-to-transition signal node sensing
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CN110223725B (zh) * 2019-05-22 2022-03-22 北京航空航天大学 一种非易失性随机存储器数据读取电路、存储器及方法
KR102667819B1 (ko) * 2019-07-11 2024-05-21 삼성전자주식회사 전원 전압과 관계없이 동작하는 스위치 회로를 포함하는 메모리 장치
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CN1505052A (zh) * 2002-12-04 2004-06-16 ������������ʽ���� 半导体存储装置和存储单元的写入以及擦除方法
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Also Published As

Publication number Publication date
US7518903B2 (en) 2009-04-14
JP2007234133A (ja) 2007-09-13
CN102354529B (zh) 2014-03-26
US20070206403A1 (en) 2007-09-06
CN101030448A (zh) 2007-09-05
CN102354529A (zh) 2012-02-15

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