CN100353499C - 半导体元件及其制造方法,半导体器件及其制造方法 - Google Patents

半导体元件及其制造方法,半导体器件及其制造方法 Download PDF

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Publication number
CN100353499C
CN100353499C CNB2004100324793A CN200410032479A CN100353499C CN 100353499 C CN100353499 C CN 100353499C CN B2004100324793 A CNB2004100324793 A CN B2004100324793A CN 200410032479 A CN200410032479 A CN 200410032479A CN 100353499 C CN100353499 C CN 100353499C
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China
Prior art keywords
electrode
semiconductor element
projection
capillary
salient point
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CNB2004100324793A
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CN1549305A (zh
Inventor
东和司
塚原法人
米泽隆弘
八木能彦
北山喜文
大谷博之
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority claimed from JP26064596A external-priority patent/JP3532361B2/ja
Priority claimed from JP28983696A external-priority patent/JP3439048B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1549305A publication Critical patent/CN1549305A/zh
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Abstract

本发明提供了一种在IC电极上形成凸点电极的方法，包括：利用丝焊设备在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把丝焊接于球焊部位；和切断丝，通过把焊接毛细管的槽角设定为不大于90度，使球焊部位高度大于丝直径，可以防止丝与除球焊部位之外的球焊部位周边接触。本发明还提供了用上述方法形成的半导体器件。

Description

半导体元件及其制造方法，半导体器件及其制造方法
本申请是申请日为1997年9月30日、分案提交日为2004年3月30日、申请号为200410032479.3、发明名称为“半导体元件及其制造方法，半导体器件及其制造方法”的发明专利申请的分案申请。
技术领域
本发明涉及一种半导体元件，其中通过采用金属细丝(丝)的球焊法等、亦即在IC电极上形成凸点的方法，在半导体元件的电极上形成凸点；一种制造该半导体元件的方法；一种采用该半导体元件制造的半导体器件；和该半导体器件的制造方法。
背景技术
近年来，电子设备已经开发成为尺寸小、重量轻及高功能，这要求电子元件也要为尺寸小、重量轻及高功能。由此来看，针对与本发明相关的在IC电极上形成凸点电极的方法，使用丝焊技术的安装方法。
以下将结合附图说明利用上述已有的丝焊技术在IC电极上形成凸点电极的方法。
图17A～17D是已有的凸点电极形成技术的示意图。图中示出了金丝101、金球102、焊接毛细管103、电路板170上的IC电极104、球焊部位105和凸点电极106。
以下说明在IC电极上形成凸点电极的方法。
图17A中，在金丝101的尖端形成的金球102被提供在IC电极上，如图17B所示，并由焊接毛细管103焊接在IC电极104上。接着，横向向上移动焊接毛细管103，然后向下，从而把金丝连接于球焊部位105，如图17C所示。随后毛细管103向上移动并切断金丝101，从而形成如图17D所示的凸点电极。
以下具体说明上述操作。利用已有的球焊法在半导体元件上形成凸点的方法和连接设置了凸点的半导体元件的方法公开于美国专利4661192。以下说明该方法。
如图18A所示，从用做放电电极的焊枪160，向由毛细管103尖端伸出的丝101的尖端101a，施加的几千伏电压的高电压。通过施加此高电压，丝101的温度生高并从尖端101a熔化，同时在焊枪160与丝尖端101a之间流过放电电流，以致形成图18A所示的球形熔化部位。形成球102之后，焊接毛细管103向下移至半导体元件一侧，以便球102紧靠在半导体元件170的电极104上。相对于紧靠在电极104上的球102再向下移动毛细管103，把球102焊接于电极104，并由毛细管103的尖端部位103a形成球102，从而形成如图18C所示的凸点基部8。接着，如图18D所示，通过向上移动毛细管103至与半导体元件相对一侧，同时用毛细管103夹住丝101，在凸点基部8的附近扯断丝101，在半导体元件170的电极104上形成凸点30。由此在凸点30的凸点基部8上向上形成突起部位30a，如图18D所示。
在如此于电极104上形成了凸点30的半导体元件1中，如图19A所示，凸点30紧压在形成有平坦表面的基底材料21上，从而形成具有平坦表面31a的凸点31，该平坦表面是通过使突起部位30a平坦化而形成的。接着，如图19B所示，使具有平坦表面31a的凸点31与形成在平台41上的导电胶18接触，从而把导电胶18转移到凸点31的平坦表面31a及其周围。随后如图19C所示，通过使导电胶18已经转移其上的凸点31与电路板19上的电极20对准位置，之后使凸点31紧压电极20，把凸点31焊接于电极20，用于实现半导体元件170与电路板19之间的电连接。
但是，根据上述凸点电极形成法，当金丝101被毛细管103切断时，金丝101与IC电极部位104接触。因此，如图20A和20B所示，电极106a、106b呈现异常形状，IC电极材料粘附于金丝101的尖端，引起金球102a不能正常形成的问题，如图20C所示。
发明内容
针对上述问题，本发明的目的在于提供一种在IC电极上形成凸点电极、而不会引起电极形状异常的方法。
根据本发明，提供了一种在IC电极上形成凸点电极的方法，包括：利用丝焊设备在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把丝焊接于球焊部位的斜面；和在所述球焊部位的斜面处切断所述丝，通过把焊接毛细管的槽角设定为不大于90度，使球焊部位高度大于丝直径，可以防止丝与除球焊部位之外的球焊部位周边接触。
本发明还提供了一种在IC电极上形成凸点电极的方法，包括：利用丝焊设备在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把丝焊接于球焊部位的斜面；和在所述球焊部位的斜面处切断所述丝，通过把焊接毛细管的槽直径设定为大于球焊直径，可以防止丝与除球焊部位之外的球焊部位周边接触。
本发明还提供了一种半导体元件，其中，把具有两个突起的一个凸点电极焊接于半导体元件的电路形成表面上的IC电极，所述半导体元件安装于电路板时，所述两个突起与所述电路板上的一个电极接触或靠紧。
采用本发明的上述设置，当丝焊接于球焊部位时，丝不会与除球焊部位之外的球焊部位周围接触，以使凸点电极可以形成在IC电极上。
通过以下参考附图对优选实施例所做的说明，将可了解本发明的这些和其他方案及特征。
附图说明
图1A、1B和1C是展示根据本发明实施例在IC电极上形成凸点电极的方法的剖面图。
图1D是展示根据本发明实施例在IC电极上形成凸点电极的方法的剖面图。
图2是该实施例中的焊接毛细管的剖面图。
图3A是该实施例的毛细管驱动装置的透视图。
图3B是说明该实施例操作的时刻图。
图4是展示在根据本发明第七实施例的半导体元件上形成的凸点形状实例的侧视图。
图5A、5B、5C、5D、5E和5F是说明形成图7所示凸点的操作的示意图。
图6是为本发明第8实施例的半导体元件设置的凸点的制造工艺的流程图。
图7是展示图4所示凸点形状另一实例的侧视图。
图8A、8B、8C和8D是说明通过把具有图7所示凸点的半导体元件连接于电路板而形成半导体器件的工序的示意图。
图9是凸点顶部尺寸与转移至凸点的导电粘结剂的转移量之间的关系曲丝图。
图10是图7所示凸点的侧视图，其中使第二突起的另一端从半导体元件的端表面突出。
图11是制造具有本发明第9实施例半导体元件的半导体器件的工艺的流程图。
图12是测试由具有图10所示凸点的半导体元件制造的半导体器件的方法实例的示意图。
图13是测试由具有图10所示凸点的半导体元件制造的半导体器件的方法实例的示意图。
图14A和14B展示了在由本发明第10实施例的半导体元件制造半导体器件中，凸点通过焊料连接于电路板的板电极的情况示意图。
图15展示了第二突起的另一端不延伸至图7所示凸点中的第一突起的高度的情况。
图16是展示利用板在图15所示凸点上形成平坦表面的情况的示意图。
图17A、17B、17C和17D是展示在IC电极上形成凸点电极的已有方法的剖面图。
图18A、18B、18C和18D是说明形成已有的凸点的操作的示意图。
图19A、19B和19C是用于实现半导体器件与电路板之间的电连接的凸点电极形成法的示意图。
图20A、20B和20C是展示形成于IC电极上的凸点的异常形状的剖面图。
具体实施方式
说明本发明工艺之前，应注意贯穿于全部附图中，相同部件用相同参考标号表示。
首先，说明本发明的优选实施例之前，以下简要说明本发明的总方案。
根据本发明的方案，提供一种凸点电极形成方法，包括：利用丝焊设备(例如毛细管驱动装置)在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把金丝焊接于球焊部位；和切断金丝，通过把焊接毛细管的下降位置预先设定为高于球焊形成位置的位置，可以防止金丝与除球焊部位之外的球焊部位周边接触。按此设置，毛细管切断金丝时，可以避免金丝被毛细管压迫时与IC电极接触。
根据本发明的方案，提供一种凸点电极形成方法，包括：利用丝焊设备在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把金丝焊接于球焊部位；和切断金丝，通过把焊接毛细管的槽角设定为不大于90度，使球焊部位高度大于金丝直径，可以防止丝与除球焊部位之外的球焊部位周边接触。按此设置，把球焊部位的高度设置成较高，以使金丝被焊接毛细管切断时，可以避免金丝与电极部位接触。
根据本发明的方案，提供一种凸点电极形成方法，包括：利用丝焊设备在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把金丝焊接于球焊部位；和切断金丝，通过把焊接毛细管的槽直径设定为大于球焊直径，可以防止金丝与除球焊部位之外的球焊部位周边接触。按此设置，稳定金丝的焊接状态，以使金丝被焊接毛细管切断时，可以避免金丝与电极部位接触。
根据本发明的方案，提供一种凸点电极的形成方法，包括：利用丝焊设备在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把金丝焊接于球焊部位；和切断金丝，通过使焊接毛细管的外径部位的尖端部位成为锥形厚度，用于在金丝切断阶段集中切割力，可以防止金丝与除球焊部位之外的球焊部位周边接触。按此设置，利用小的切力切断金丝，以使在切断阶段中可以避免金丝与电极部位接触。
根据本发明的方案，提供一种凸点电极的形成方法，包括：利用丝焊设备在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把金丝焊接于球焊部位；和切断金丝，通过设定角度使焊接毛细管的外径部位与球焊部位的斜面均匀接触，可以防止金丝与除球焊部位之外的球焊部位周边接触。按此设置，改善了焊接毛细管与金丝接触的效果，以使金丝可以在稳定状态下切断。
根据本发明的方案，提供一种凸点电极的形成方法，包括：利用丝焊设备在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把金丝焊接于球焊部位；和切断金丝，通过使焊接毛细管与球焊部位中心之上的金丝接触，可以防止金丝与除球焊部位之外的球焊部位周边接触。按此设置，焊接毛细管可以在稳定状态下焊接切割金丝。
以下参考图1和2说明本发明的优选实施例。
(第一实施例)
图1A-1C展示了根据本发明第一实施例的凸点电极形成方法的工艺的剖面图，其中，金丝101焊接于球焊部位115时，可以避免金丝101与球焊部位115之外的任何部位接触。
图1A-1C中展示了作为丝的一个例子的金丝101、焊接毛细管113、IC电极104和球焊部位115。
接着参考图1A-1C和2说明在IC电极上形成凸点电极的方法的操作。
图1A是在板170的IC电极104上形成球焊部位115的剖面图，图1B是展示由位于下降位置的焊接毛细管113把金丝101焊接于球焊部位115的状态的剖面图，图1C是凸点电极116的剖面图。
图2是焊接毛细管113的剖面图，其中展示了槽角107、外径108、槽直径109、面角110和锥角111。
首先，在球焊形成阶段焊接毛细管113的高度位置存储于图1A中的设备，焊接毛细管113向下移动把金丝101焊接于球焊部位115时，焊接毛细管113的高度位置预先设定为高于球焊阶段中的位置。
如图3A所示，由超声发生装置例如毛细管驱动装置150中的音圈驱动毛细管113，围绕转轴151精确地上升和下降。毛细管驱动装置150安装在由电机154和155在X和Y方向驱动的X-Y台153上。由控制器181控制电机154和155以及用于驱动超声发生装置152的的驱动器的操作。
以下参考图3A和3B说明基于球焊法的上述实施例的操作。图3B的纵轴展示了垂直于X和Y方向的Z方向的移动(高度)，其横轴展示了实施例的操作时间。
应注意在以下的第七实施例也具体说明了球焊法。图3B中，首先，控制器181控制电机154和155，以使毛细管113移至焊枪160，在丝101的下端形成球。然后，基于存储于控制器181的存储器182的数据，通过控制器181的控制，把毛细管113移至第一丝坐标(X、Y、Z)，作为在板170的电极104上形成凸点电极116(凸点)的参考位置。第一丝坐标在Z方向位于电极104的位置正上方。此时，用于夹住设置在毛细管驱动装置150内的毛细管113之上的丝1的夹钳159打开不夹住丝1。然后，由控制器181控制超声发生装置152的驱动器180，以便在图3B的第一步骤(1)，由超声发生装置152把毛细管113向下移向电极104。当毛细管113已被向下移动了在存储器182存储的预定距离时，毛细管113的下降速度从快变慢，避免毛细管113以如此之大的力与电极104接触以致使其受损。亦即，毛细管113在第二步骤(2)缓慢下移寻找电极104。毛细管113接触到电极104时，毛细管113继续下降，直到驱动器180通过检测流过驱动器180的电流，从毛细管113检测到预定的载荷，载荷检测之后，驱动器向控制器181发送第一接触信号。根据接受到的第一接触信号，控制器181控制驱动器180，向具有第一负载的毛细管113施加超声振动，在第三步骤(3)于图1A所示电极104上形成球焊部位115。形成球焊部位115之后，在第四步骤(4)以高于第二和第三步骤(2)和(3)的下降速度的高速上移毛细管113.
然后在第五步骤(5)，夹钳159开始夹住丝1并在预定的时间期间继续夹住丝。在第五步骤(5)毛细管113如图5D所示呈环状下移，同时在此期间丝1被夹钳159夹住，在此期间之后丝1脱离夹钳。
如果需要，在第六步骤(6)由控制器181根据球焊部位115的形状进行移动量的校正。
然后，在搜索球焊部位115的斜面的第七步骤(7)中，毛细管113再以低速下移，以免毛细管113以大到可使其受损的力与球焊部位115的斜面接触。此时，如上所述，当毛细管113下移把丝1焊接于球焊部位115的斜面时，毛细管113高度的最低位置，预先设置为高于球焊阶段中的最低位置的位置。因此，根据毛细管113的预先设定位置，预先确定毛细管113在Z方向的移动量，并存储于存储器182。这样，根据存储的位置及移动量数据，控制器181控制超声发生装置152，使毛细管113以低速下降。为了把丝1焊接于球焊部位115的斜面，也预先确定毛细管113从球焊部位115的中心在X和Y方向的移动量，并存储在存储器182。于是，根据存储的位置及移动量数据，控制器181控制电机154和155。毛细管113接触到球焊部位115的斜面时，毛细管113继续下降，直到驱动器180通过检测流过驱动器180的电流，检测到来自毛细管113的预定载荷。载荷检测之后，驱动器向控制器181发送第二接触信号。根据第二接触信号的接受，控制器181控制驱动器180，向具有第二负载的毛细管113施加超声振动，在第八步骤(8)把丝1连接于球焊部位115的斜面，如图1B所示。丝1连接于球焊部位115的斜面之后，在第九步骤(9)上移毛细管113，同时夹钳159不再夹住丝1。完成第九步骤(9)之后，夹钳159再次夹住丝1，在第十步骤(10)，毛细管113上移扯断丝1，移至下一个电极104之上的下一个坐标(X、Y、Z)。然后，在第十一步骤(11)，利用焊枪160在丝1的下端形成另一球。然后，在下一电极104上重复第一至第十一步骤(1)～(11)。
通过把焊接毛细管113的下降位置预先设定为高于在球焊接阶段的位置，金丝101被毛细管113切断时，即使金丝101被毛细管113压住，也可以避免金丝101与IC电极部位104接触。
(第二实施例)
如图2所示，通过把焊接毛细管113的槽角107设定为不大于90度的角度，把球焊部位115的高度设置为大于金丝101的直径。
通过如此设定球焊部位115的高度，当金丝101被焊接毛细管113切断时，可以避免金丝101与电极部位104接触。
(第三实施例)
如图2所示，通过把焊接毛细管113的槽直径109设定为大于球焊部位直径，在球焊阶段可以避免球焊部位115向外散开，从而稳定金丝101的焊接状态。通过如此稳定金丝101的焊接状态，当金丝101被焊接毛细管113切断时，可以避免金丝101与电极部位104接触。
(第四实施例)
如图2所示，通过把焊接毛细管113的外径部位108的尖端部位的厚度设定为例如10μm以下，使其成为锥形，从而在切断金丝101时，可使切断力集中在外径部位108的尖端部位上。如上所述，由于用小的切断力切断金丝101，在切断阶段可以避免金丝101与电极部位104接触。
(第五实施例)
如图1B所示，通过设定外径部位的角度，以使焊接毛细管113的外径部位与球焊部位115的斜面均匀接触，改善焊接毛细管113与金丝101的接触效果，以便能稳定地切断金丝101。
(第六实施例)
如图1B所示，通过使焊接毛细管113在球焊部位115的斜面中心部位与金丝101接触，即使金丝接触变化时，也可以稳定状态焊接和切断金丝101。
参看图1D，把焊接毛细管113的下降位置预先设定为高于球焊形成位置，如此确定作为如下的一个例子。图1D中，为了防止丝101的弯曲部分的最低点D与电极104接触，毛细管113的外径部位108与凸点焊接部位115的斜面接触的点C应保持在距电极104表面总和为[(丝101的外径)+α]的高度，其中α是常数。当点C设定在凸点焊接部位115的斜面中心时，点C距电极104的高度(μm)实际表示为：C＝-0.1*θ+34，其中θ是凸点焊接部位115的顶角(＝焊接毛细管113的槽角107)。例如，θ为0°时，C是34；θ是70°时，C是27；θ是80°时，C是26；θ为180°时，C是16。α＝5μm时，最好满足表达式：θ≤90°。实际上，当点C设定在凸点焊接部位115的斜面中心时，凸点焊接部位115的中心与接触于凸点焊接部位115的斜面上的毛细管113中心之间的距离B，应满足表达式：B＝0.5*A+40，其中距离A是凸点焊接部位115的宽度。距离A与丝101球101a的外径F之间的关系应满足表达式：F(μ m)＝A(μm)-13(μm)。作为实际例子，当作为凸点焊接部位115的顶角(度)的θ(＝焊接毛细管113的槽角107)在60°～90°的范围，丝101的外径为25μm时，凸点焊接部位115的距离A为80±5μm，凸点焊接部位115的中心与毛细管113之间的距离B为80±2μm，点C的高度为80±10μm。
虽然上述实施例中采用金材料作为凸点电极材料，但凸点电极材料并不限于金，其他材料也可产生相同的效果。
如上所述，利用上述每种方法，在IC电极上形成凸点电极的方法中，包括：利用丝焊技术在IC电极上形成球焊部位；向上移动焊接毛细管；横向移动焊接毛细管然后向下；把金丝焊接于球焊部位；和切断金丝，金丝不会与除球焊部位之外的球焊部位周边接触。此设置可以防止因金丝与除球焊部位之外的部位例如电极部位接触而引起的金丝焊接条件不稳定，并防止因IC电极材料与金丝的粘结而引起的凸点电极的异常形状，从而可以高质量和高精确度地在IC电极上形成凸点电极。
(第七实施例)
以下将参考附图说明根据本发明的半导体元件、采用该半导体元件的半导体器件、该半导体元件的制造方法和该半导体器件的制造方法。应注意在各图中相同构成部件用相同的参考标号表示，
首先说明上述半导体元件。
在半导体元件1的电路形成表面1a上的每个电极2焊接一个凸点。在第七实施例的半导体元件1中，具有第一突起40和第二突起50的两个突起的凸点3焊接在至少一个电极2，如图4所示。应予注意，这种凸点3最好设置在半导体元件1的全部电极2上。第二突起50延伸超出由在电极2上突出第一突起40所限定的平面区域III，作为第二突起50的终端部位的另一端52，在离电极2的高度方向从一端51延伸至约等于第一突起40顶部41高度的高度。应注意图4展示的情况是另一端52延伸至稍高于第一突起40顶部41的高度的位置。图15展示的情况是另一端52延伸至高于约为一端51的高度位置与第一突起40顶部41的高度位置之间的一半的位置。
第二突起50的另一端52与半导体元件1的相邻电极2不接触。
通过在一个凸点3如此设置第一突起40和第二突起50，可以增大凸点3顶部7的面积，如下详述，可以增大利用导电粘结剂把上述凸点3连接于电路板的电极时的连接面积，以使连接电阻值降低。此外，可以增加导电粘结剂在凸点3上的转移量，这样消除了不良导电的发生可能性，改善了连接可靠性。
上述类型的凸点3大致通过图6所示的步骤1至3(每个步骤在图中表示为“S”)的工艺形成，多数是根据球焊法。亦即，在步骤1，通过控制放电时间来控制以下说明的再结晶区的长度，从而熔化丝10。在步骤2，在电极2上由熔化的丝形成第一突起40。在步骤3，再形成第二突起50。以下将具体说明这些操作。
如图5A所示，丝直径例如为25μm例如由金材料制成的丝10，从毛细管9的尖端部位9a拉出长约II。应注意上述长度II是450μm，即已有技术的突出长度。丝10的材料并不限于上述的金，也可采用铜、铝、镍、焊料等，只要能实施球焊法即可。根据丝10的直径，可以根据需要改变凸点尺寸例如基部直径和高度。
与已有技术类似，向丝10的尖端部位10a施加高电压，如图5B所示，尖端部位10a被放电电极与尖端部位10a之间的放电所熔化，从而形成球11。应注意，通过施加的电压值可以控制球11的直径，施加电压提高球11直径增大。在球11和与球11连接的丝10的一定长度的部分中，通过上述放电产生的热使丝10的晶粒增大。此具有大晶粒的部分用做再结晶区16，放电时间为5ms时，其长度VI为120μm。由于在具有初始晶粒尺寸的正常结晶区17与上述再结晶区1 之间的晶界部位中晶粒尺寸不同，所以形成丝10的断裂强度弱的晶粒界面15。由于第二突起50的另一端52位于晶粒界面15或其附近，所以再结晶区16的长度VI成为形成第二突起50的重要因素。利用实施放电的放电时间可以控制上述的再结晶区16的长度VI。
接着，如图5C所示，利用从毛细管9施加的压力、热或超声振动，把在丝10的尖端部位10a形成的球11焊接于半导体元件1的电极2上。利用如此熔化丝10而形成的球11，在电极2上形成的第一突起40的形成部分42的形状，由毛细管9的尖端部位9a的形状决定。因此，可使形成部分42具有如图4所示的大致的锥形，或者具有两级突起的形状，包括形成肩部422的基部421和在基部421上直立设置的突出部位424，如图7所示。在具有上述类型基部421的凸点300中，由于设置了肩部422，在向凸点300转移导电粘结剂时，导电粘结剂仅转移到突出部位424，借助于肩部422和基部421产生了防止导电粘结剂散开到半导体元件1的电路形成表面1a的效果。应注意，在以下说明中以此凸点300为例。
如图5D所示，在丝10中，球11附近的最接近的部分10b在平行于基部421之上垂直方向的平面，按路丝14所示由毛细管使其做环状移动。图5D中，毛细管9为环状移动而移动的距离稍有夸张，该环状移动实际上是在基部421的平面区域III进行的。应注意，在本第七实施例中平面区域III的尺寸约为80μm。
通过上述环状移动的最后运动14a，与突出部分424连接的最接近部分10b从形成部分42的顶部41向下延伸，如图5E所示，利用压力、热或超声振动把最接近部分10b接合于基部421的周边部位423。这样，形成第一突起40。因此，第一突起40包括形成部分42和丝材料部分43，丝材料部分已经由最接近部分10b组成，从顶部41延伸并焊接于周边部位423。进行上述环状移动的目的是为了防止在最接近部分10b从形成部分42顶部41的向下移动中，顶部41降落在半导体元件侧。
接着，为毛细管9设置的夹钳12夹住在毛细管9内延伸的丝10，之后如图5F所示，随着毛细管9的提升焊接于基部421周边部位423的丝10被向上引导，然后由毛细管9的进一步提升而在晶粒界面15扯断。这样，形成上述第二突起50。通过毛细管9的上述操作，第二突起50的另一端52延伸超出第一突起40的上述平面区域III，到达焊接于上述周边部位423的一端51与第一突起40的大致顶部41之间的高度位置。应注意，如上所述通过控制上述放电时间，可以控制晶粒界面15在丝10延伸方向的位置，以使另一端52即与晶粒界面15大致等同的部位，布置在上述一端51与最接近顶部41之间的高度位置。这样，获得了在一个电极2上具有两个突起的凸点。
在上述实施例中，丝10从第一突起40的丝材料部分43延续至第二突起50。但是，以下做法也是可以的，把丝材料部分43的端部焊接于例如基部421的周边部位423，一次切断，把第二突起50的一端51焊接于例如周边部位423并按上述延伸另一端52。
在上述实施例中，进行丝10的环状移动，以便第一突起40的顶部41布置在大约在相对于电极2的垂直方向的位置。但是，也可不进行环状移动，只要顶部41不进行环状移动也能布置在垂直方向的位置即可。
上述实施例中，凸点300和3均形成在半导体元件1的电极2上。但是，凸点300和3也可以形成在其上安装了半导体元件1的电路板上的板电极上。
接着，以下将说明的情况，是利用上述凸点300等在电路板上安装具有上述凸点300或3的半导体元件1，来形成半导体器件。应注意，以下说明将以凸点300为例。应注意，上述安装操作类似于参考图19A～19C说明的操作。
针对设置有上述凸点300的半导体元件1，通过把半导体元件1压在基部材料侧，如图8A所示，第一突起40的顶部7和凸点300的第二突起50压紧在板21的平坦表面21a，从而在各顶部7形成平坦表面31a。
接着，如图8B所示，通过使凸点300的平坦表面侧与形成在平台41的平坦表面上的导电粘结剂接触，导电粘结剂18转移至第一突起40和第二突起50上。
接着，如图8D所示，其上已经转移了导电粘结剂1 8的凸点300与电路板19的板电极20对准，每个凸点300的第一突起40和第二突起50通过导电粘结剂18固定于板电极20上。这样制成了半导体器件600。
借助于第一突起40和第二突起50的两个突起的设置，增大了导电粘结剂18向顶部7的转移量，即图8C所示导电粘结剂18的高度IV。此外，通过在第一突起40和第二突起50的顶部7上形成平坦表面31a，进一步增大了顶部7的面积。如图9所示，随着顶部7的面积增大，上述转移量增加，因此，通过形成平坦表面31a可以增加转移量。按上述方式，可以在凸点300上转移高度IV为10μm或更高的导电粘结剂18，如图8C所示。
此外，半导体元件1连接于电路板19的情形中电路板19的翘曲被导电粘结剂18的上述转移量所吸收，因此，转移量的上述增加可使翘曲的吸收量增大。因此，在半导体元件1与电路板19连接的部位的翘曲的技术条件，可以从传统的技术条件4μm减轻为10μm，还可使电路板19的成本降低。
此外，可以增加凸点300与电路板19上的板电极20的连接面积以及导电粘结剂18的量，以便可以增加把凸点300连接于电极20的强度，并可使连接电阻值抑制为低值。
应注意，借助于第一突起40和第二突起50在凸点300的形成，在不形成平坦表面31a的条件下可以在凸点300上转移足够量的导电粘结剂的情况，可以不形成平坦表面31a。
此外，在以下情况中，即第二突起50的另一端52不延伸至第一突起40顶部7的高度，半导体元件1在上述板21的压紧不到板21的平坦表面21a接触于另一端52的程度，如图15所示，有时，仅在第一突起40顶部7形成平坦表面31a，如图16所示，在第二突起50的另一端52不形成平坦表面31a。
在上述情形，要求导电粘结剂18转移至另一端52。因此，在图15所示的第二突起50的另一端52不延伸至第一突起40顶部7的高度的情况中，当半导体元件1压向板侧时，板21的平坦表面21a与另一端52之间的间隙V具有如下尺寸，如图8B所示凸点300与导电粘结剂18接触时，导电粘结剂18可以转移至另一端52。换言之，在图15所示的第二突起50的另一端52不延伸至第一突起40顶部7的高度的情况中，要求半导体元件1的凸点300压紧在板21，以便板21的平坦表面21a与另一端52之间的间隙尺寸不大于上述间隙V。
接着将说明第二突起50的另一端52取向的方向。
如上述在凸点300形成的第二突起50的另一端52可以取向在半导体元件1的周边侧，或者如图10所示，另一端52也可以延伸超出半导体元件1的周边的外端表面1b的延长丝。应注意，通过毛细管9的操作来执行另一端52的取向。针对凸点300，如图10所示，另一端52延伸超出半导体元件1的周边的外端表面1b的延长丝的凸点表示为凸点310。另外，属于丝10的并延伸超出外端表面1b的延长丝的部分由向外突出部分53表示。
通过这样使另一端52取向于半导体元件1的周边侧，从而另一端52不延伸至半导体元件1中的相邻电极2。因此，当导电粘结剂18转移至凸点3 10时，另一端52不与相邻电极2接触或短路。如上所述，借助于除第一突起40之外的还设置第二突起50，使另一端52取向至半导体元件1的周边侧，可以保证导电粘结剂18的转移量，并可防止短路的可能发生。
另外，如图11所示步骤11所述，通过在半导体元件1的电极2上形成凸点310，并在步骤12按面朝下安装方式把凸点310连接于电路板19的电极20上，还可以制造半导体器件。如上所述制造半导体器件时，在具有凸点310的半导体元件1中另一端52既不与相邻电极2接触也不会短路。
此外，凸点310的第二突起50具有向外突出部分53。因此，当凸点310连接于电路板19上的电极2时，其连接面积大于例如凸点300的面积。所以，可使连接强度高，连接电阻值低。
此外，在具有凸点310的半导体元件1连接于电路板19的半导体器件610中，用于测试凸点310与电路板19上的电极20的电连接性能的测试工序，可以作为半导体器件610的制造工序来设置，如图11所示。以下将说明该测试。
例如，具有凸点300的半导体元件1按面朝下方式安装在电路板19上时，第二突起50的另一端52不从半导体元件1的周边外端表面1b突出。因此，凸点300与电路板19上的电极20连接的部位不能目测。当具有凸点310的半导体元件1按面朝下方式安装于电路板19上时，向外突出部分53从半导体元件1的周边外端表面1b突出。所以，借助向外突出部分53可以观察凸点310与电路板19上的电极20连接的部位，进行目测。
此外，也可以利用摄像机25和连接于摄像机25的外观检测仪26，如图12所示，自动进行上述目测。亦即，通过用摄像机摄取向外突出部分53连接于电极20的部位图像，把图像接受进外观检测仪26，利用外观检测仪26检测连接部位中导电粘结剂18是否存在，可以对凸点310与电极20的电连接进行良或差的检测。
此外，在采用具有凸点310的半导体元件1的半导体器件610中，可以用接触探针26接触向外突出部分53或者覆盖向外突出部分53的导电粘结剂18，如图13所示。接触探针26连接于半导体元件性能测试仪27，该测试仪能检测凸点310与电路板19的电极20的连接状态或半导体元件1的工作。所以，例如执行二极管性能测试，可以在短时间内检测半导体元件1电极2与电路板19电极20的连接是否处于未导通状态或者短路。
应注意，上述二极管性能测试，是为了防止半导体元件1的电路过电流，对形成在半导体元件1的电路的二极管进行测试。
根据上述实施例，利用导电粘结剂18实现凸点与电路板19的电极20的连接。但是，如图14A和14B所示，可以采用焊料28代替导电粘结剂18。应注意，在图14A和14B中以凸点300为例。
与参考图8A-8D的说明类似，在半导体元件1的凸点300的第一突起40和第二突起50的顶部7设置各自的平坦表面31a。另一方面，如图14A所示，在电路板19的电极20上设置焊料28。然后，如图14B所示，使半导体元件1的凸点300与电路板19的电极20对准，使凸点300的平坦表面与焊料28接触并加热，借助焊料28使第一突起40和第二突起50的两个突起与电路板19的电极20连接。
通过使电路板19的电极20利用焊料与具有第一突起40和第二突起50的凸点300连接，形成焊料缝。借助于此焊缝的设置，提高了抵抗施加在电路板19上的应力的强度，改善了连接可靠性。
在上述实施例中利用球焊法形成具有两个突起的凸点。但是，当然也可采用能在至少一个凸点上形成两个突起的方法，代替球焊法。
如上具体所述，根据本发明方案的半导体元件及本发明方案的半导体元件制造方法，在一个凸点上设置两个突起。所以，增加了凸点与电路板上的板电极的接触面积。因此，可使连接强度和连接可靠性高，连接电阻值低，半导体元件与电路板的连接稳定。
此外，根据本发明方案的半导体器件及本发明方案的半导体器件制造方法，如上所述，采用在一个凸点具有两个突起的半导体元件，而且凸点连接于电路板的板电极。按此设置，凸点与电路板的板电极的接触面积增加，因此，可使半导体元件和电路板的连接强度和连接可靠性高，连接电阻值低，半导体器件稳定。
此外，根据本发明的半导体器件制造方法的方案，在具有两个突起的凸点中，第二突起的端部向半导体元件之外延伸超出半导体元件的周边。此设置当然可改善连接强度和连接可靠性，以及降低和稳定连接电阻值，如上所述，并可利用半导体元件向外延伸的第二突起，测试半导体器件。
1996年10月1日申请的日本专利申请8-260645和1996年10月31日申请的日本专利申请8-289836的全部公开，包括说明书、权利要求书、附图和摘要均在此全文引证为参考。
虽然参考附图结合优选实施例全面地说明了本发明，但应注意各种变化及改进对于本领域的技术人员来说是显而易见的。这些变化和改进，除非脱离了本发明，否则均应被视为包括在由权利要求书所限定的本发明范围内。

Claims (9)

1.一种半导体元件，其中，把具有两个突起(40、50)的一个凸点电极(3、300、310)焊接于半导体元件的电路形成表面上的IC电极(2)，所述半导体元件安装于电路板时，所述两个突起与所述电路板上的一个电极接触或靠紧。
2.根据权利要求1的半导体元件，其中所述两个突起是：
与所述电极焊接的第一突起(40)，包含通过使丝一次熔化并凝固而形成的部分及其周边；
第二突起(50)，由所述丝的未熔化部分形成，从所述第一突起延伸超出由在所述电极(2)上突出所述第一突起所限定平坦区域，相对于所述电极达到等于所述第一突起的高度。
3.根据权利要求2的半导体元件，其中，所述第一突起设置有形成部分(42)和丝材料部分(43)，形成部分是利用毛细管形成所述丝的熔化部分并使其凝固而形成的，丝材料部分由在所述熔化部分附近的丝构成，从所述形成部分的顶部(41)向下延伸，并焊接于所述形成部分。
4.根据权利要求2或3的半导体元件，其中，
所述形成部分具有焊接于所述电极的基部(421)和在所述基部上直立设置的突起部分(424)。
5.根据权利要求3的半导体元件，其中，从所述顶部向下延伸的所述丝材料部分焊接于所述电极，代替所述形成部分。
6.根据权利要求2、3和5中任一项的半导体元件，其中，所述第二突起朝向所述半导体元件的外端表面侧延伸，但不超过所述外端表面。
7.根据权利要求2、3和5中任一项的半导体元件，其中，所述第二突起向所述半导体元件之外延伸，并超过所述半导体元件的外端表面。
8.根据权利要求2、3和5中任一项的半导体元件，其中，所述第一突起和所述第二突起各自具有在突起顶部的平坦表面部位(31a)。
9.一种半导体器件，其中，电路板上的电极(20)与权利要求2、3或5中任一项所限定的半导体元件的所述凸点相互电连接。
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CN1179625A (zh) 1998-04-22
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US6207549B1 (en) 2001-03-27
US20010005054A1 (en) 2001-06-28
SG103272A1 (en) 2004-04-29
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US20050146029A1 (en) 2005-07-07
EP1158578A1 (en) 2001-11-28
EP0834919A3 (en) 2000-02-09
EP0834919A2 (en) 1998-04-08
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CN1181531C (zh) 2004-12-22
US7071090B2 (en) 2006-07-04
DE69737621T2 (de) 2007-12-20
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EP1158579B1 (en) 2008-11-19
DE69737621D1 (de) 2007-05-31
US6894387B2 (en) 2005-05-17
SG79222A1 (en) 2001-03-20
TW366542B (en) 1999-08-11
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EP1158578B1 (en) 2004-06-30
KR100283501B1 (ko) 2001-03-02

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