KR890000585B1 - 도선 접착법 - Google Patents

도선 접착법 Download PDF

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Publication number
KR890000585B1
KR890000585B1 KR1019810004107A KR810004107A KR890000585B1 KR 890000585 B1 KR890000585 B1 KR 890000585B1 KR 1019810004107 A KR1019810004107 A KR 1019810004107A KR 810004107 A KR810004107 A KR 810004107A KR 890000585 B1 KR890000585 B1 KR 890000585B1
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South Korea
Prior art keywords
ball
lead
electrode
spark discharge
conductor
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KR1019810004107A
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English (en)
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KR830008394A (ko
Inventor
에이.반 드 파스 헤르마누스
비.피.얀쎈 요하네스
제이.제이.로렌쯔 빌헬무스
Original Assignee
엔.브이.필립스 글로 아이람펜파.브리켄
디.제이.삭커스
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Publication of KR830008394A publication Critical patent/KR830008394A/ko
Application granted granted Critical
Publication of KR890000585B1 publication Critical patent/KR890000585B1/ko

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Abstract

내용 없음.

Description

도선 접착법
제1도는 도선 접착 장치의 개요도.
제2도 내지 제4도는 각각 도선에 볼(ball)을 형성하는 장치의 횡단면도와 평면도 및 정면도.
제5도는 불꽃 방전을 일으키는 회로의 전기회로도.
제6도 내지 제8도는 각각 도선을 전자 마이크로회로와 전류도체에 접착시키는 방법을 도시한 도면.
* 도면의 주요부분에 대한 부호에 설명
1 : 초음파 발생기 2 : 축
3, 14 : 지주 4 : 용접암
5 : 모세관 6 : 도선
8 : 방전장치 11 : 전극
12, 13 : 보조전극 17 : 반도체소자
18 : 접속도체 19 : 샤프트
본 발명은 전자 마이크로회로상의 접점과 접속도책간에 도선을 접착시키는 방법에 관한 것으로서, 도선은 알루미늄이나 또는 알루미늄합금이 사용되고 이 도선은 모세관을 통해 뻗어 나오며 도선의 단부에서는, 도선과 전극간에 보호성 가스 분위기로 불꽃방전을 일으켜 볼(ball)을 형성하고, 모세관에 의해 전자 마이크로회로상의 접점에 도선을 접착시킨후 접속도체에 도선을 접속시킨다.
예를 들면, 반도체 본체 및 전기도체상의 접점간에 도선접착을 형성하는데는 반도체 본체에 도선을 부착하는 볼접착법을 사용하는 것이 적합하다. 이러한 볼은 초음파 용접기구나 또는 열압축 접착기 또는 이들 양자를 조합시킨 장비를 사용하여 접점위치에 접속된다. 도선을 금으로 하였을 경우, 볼은 전기 불꽃 방전 장치로서 적절히 쉽게 형성될 수 있다. 그러나, 도선을 알루미늄이나 또는 알루미늄합금으로 하였을 경우에는, 볼을 형성하는데 어려움이 따른다.
보호성 가스 분위기하에서 도선과 전극간에 200V이하의 전압차를 주어 짧은 시간동안 도선과 전극을 서로 접촉시켜 불꽃방전을 일으키는데 의하여 알루미늄 도선 단부에 볼을 형성하는 방법은 이미 제안되어져 있다. 이와같이 불꽃방전이 실행되어 볼이 형성되면 도선의 단부가 용해되어 접점에 장애가 생긴다. 보호성 가스는 형성된 볼의 산화현상을 방지하는데 사용된다. 도선과 전극간에 접촉이 생겨 볼을 형성하는 이러한 방법은 대량생산에 복잡할 뿐 아니라, 더우기, 전극의 마모율이 높아 자주 전극을 바꿔야 하는 문제점이 있다.
또한, 도선단부와 전극사이를 아주 근접시켜 350 내지 10,000V의 전압차로 불꽃방전을 일으키는 방법도 제안되어져 있다. 방전전류회로내의 오믹저항성은 도전단면의 전류밀도의 첨두치가 1.2×109A/㎡ 내지 13.5×109A/㎡이 되도록 선택된다. 그러나, 불꽃방전은 보다 낮은 전압에서 일어나는 것이 좋다. 또한, 공지된 방법에 있어서는 도선단부와 전극간의 거리는 매우 짧은 예를 들면, 약 0.125mm로 정확하게 조정되어야만 한다. 그러나, 대량생산의 경우 전극과 도선단부간의 거리가 정확하게 조정되는 것이 매우 불편하므로, 이 거리가 공지된 것보다 훨씬 크게 선정되는 것이 바람직하다.
따라서, 본 발명의 목적은 서문에 언급한 방법을 제공하는 것으로서, 전국과 도선단부간에 비교적 작은 전압차로서 불꽃방전을 일으킬 수 있으며 이들간의 상호거리도 비교적 크게하여 정확하게 조정될 필요가 없는 방법을 제공하는 것이다. 이를 위해, 본 발명에 의하면, 두 보조전극사이에 불꽃방전을 일으켜 보호성가스의 이온화에 의해 플라즈마를 형성하여 상기 플라즈마내의 낮은 저항성으로 인해 25 내지 200V사이의 전압으로 전극과 도선 사이에 전기 불꽃방전이 일어나며 이 불꽃방전에 의해 도선의 단부에는 볼이 형성된다.
보다 큰 전압차가 형성되어 있는 보조전극간에 불꽃방전을 일으키면 보호성 가스내에 플라즈마가 발생된다. 이 플라즈마내의 저항성은 비이온화된 가스내의 저항성에 비해 훨씬 낮다. 이에 의해 전극과도 선간에는 비교적 작은 전압차로서 불꽃방전이 발생되며, 도선에는 볼이 형성된다. 전극과 도선 단부간의 거리는 제한되지 않으며, 가스의 저항성이 충분히 낮으면 볼을 형성하는 불꽃방전은 자동적으로 실행된다.
이 방법은 알루미늄이나 또는 알루미늄 합금의 도선에 재생 가능한 규격을 가진 볼을 쉽게 연속으로 생산하는데 적합하다. 이 규격은 전극과 도선간의 전압차에 좌우되며 또한 전기충전에도 좌우된다. 양호한 형태의 볼을 형성하는데는 200V이하의 전압차가 아주 적절한 것으로 알려져 있다.
본 발명에 의한 방법의 양호한 실시예에 있어서는, 보조 전극간의 전압이 10,000 내지 20,000V로서 점화 코일에 의해 불꽃방전이 일어나는데 의해 플라즈마가 형성된다. 이 경우, 보호성 가스내에 플라즈마를 형성하는데는 단지 간단한 장치만 필요하다.
이것은 50 내지 100V의 전압으로 전기 캐피시터의 방전에 의해 생기는 전극과 도선간의 불꽃방전에 대해서도 유리하다.
본 발명에 의한 방법의 적합한 실시예에 있어서, 전극과 도선단부간의 거리는 볼이 형성되는 동안 2mm정도로 유지된다. 이 거리는 크거나 또는 작게 선택될 수 있지만 양호한 볼 형태와 연속생산의 양자에는 상기와 같이 약 2mm가 가장 적합함이 증명 되었다.
이하, 첨부된 도면을 참조하며 본 발명의 실시예에 대해 상세히 설명하기로 한다.
제1도에는 초음파 발생기 1이 도시되며, 이 발생기는 지주 3에 조합된 축 2에 대해 피보트 가능하게 설치되어 있다. 발생기 1의 용접암 4에는 모세관 5가 설치되어 이 모세관을 통해 알루미늄 또는 알루미늄합금의 도선 6이 통과된다. 도선 6의 단부에서 볼이 형성된다. 이를위해, 도선은 불꽃방전장치 8(제2도, 3도 및 4도에도 도시됨)의 슬로트 7내로 안내된다. 이 장치 8의 본체는 예를들면, 합성수지와 같은 절연재질로 이루어져 있다. 슬로트 7에는 호스구멍 9가 뚫어져 있고 이 구멍을 통해 예를 들면 알곤과 같은 보호성가스가 호스 10을 거쳐 유입된다. 또한 이 이 방전장치 8에는 전극 11과 두개의 보조전극 12 및 13이 조합된다. 보조전극단들간의 거리는 대략 2mm정도가 좋다. 전극 11 및 도선6의 단부간의 거리도 역시 약 2mm이다. 방전장치는 샤프트 19를 중심으로 하여 회전될 수가 있어 모세관 5를 벗어나게 이동할 수가 있다.
제1도의 장치에는 또한 지주 14가 형성되어 있고 슬라이드 15가 이 지주 14위에 놓이게 된다. 슬라이드 15위에는 도체그리드가 배치된다. 도체그리도의 지지부 16상에는 반도체 소자 17이 놓이게 되며, 그 반도체 소자는 전기도선을 형성하기 위한 접점을 가지고 있다. 도선은 반도체소자 17의 접점에서 반도체그리드의 도체 18로 안내된다.
제2도 내지 제5도를 참조하여 알루미늄 또는 알루미늄합금의 도선 6단부에 볼이 형성되는 것을 설명하기로 한다. 도선 6의 단부는 방전장치 8의 슬로트 7내에 삽입된다. 예를 들면, 알곤과 같은 보호성가스가 구멍 9를 통해 슬로트내로 유입되며, 이때 가스의 흐름은 단시간내에 실행되는 것이 좋다. 즉, 볼이 형성되는 동안만 가스가 유입되는 것이 좋다. 보조전극 12 및 13간에는 전압차가 생기며, 이 전압차는 10,000 내지 20,000V가 좋으며, 점화코일에 의해 불꽃방전이 일어나게 된다. 상기 불꽃방전은 보호성 알곤가스내에 플라즈마를 형성시킨다. 이로 인해, 상기 가스내의 전기 저항성은 매우 낮은 값으로 내려간다. 전극 11과 도선 6의 단부간에는 200V이하의 전압차가 유지되는 것이 좋고, 약 70V 정도의 전압차가 양호하다.
플라즈마로 인해 전기 저항성의 값이 매우 낮게 되면, 전극 11 및 도선 6의 단부간의 거리가 예를 들면 2mm로서 비교적 큰데도 불구하고 이들 양자사이에서는 불꽃방전이 일어나게 된다. 불꽃방전이 일어나면, 도선의 단부에는 볼이 형성되고, 이 볼의 규격은 매우 쉽게 재생될 수가 있다.
제5도는 알루미늄 도선단부에 볼을 형성하기 위해 불꽃방전을 일으키는 회로 구성을 개략적으로 도시한 회로도이다. 도시되지 않은 단안정 멀티 바이브레터에서 발생한 펄스 20이 트랜지스터 21의 베이스에 충분한 고전압으로 공급되어 트랜지스터를 통해 전류를 흐르게 한다. 짧은 펄스 20의 인가가 종료되면, 트랜지스터 21, 22 및 23은 연속적으로 스위치 오프되어 점화코일의 일차권선 24에 흐르는 전류는 갑자기 영으로 떨어진다. 이 유도에 의해 점화코일의 이차권선 25에는 예를들면, 20,000V의 고전압이 발생된다. 이 결과, 전극 12 및 13 사이에 전기불꽃방전이 일어나고 보호성 알곤 가스에서 플라즈마가 형성된다.
도선 6 및 전극 11사이에는 전기 캐패시터 27이 접속되어 있다. 이 캐패시터는 전원에 접속되어 충전된다. 플라즈마내의 저항성이 낮으므로 캐패시터 27은 전극 11 및 도선 6의 단부사이에 불꽃방전이 일어나는 동안 방전된다. 이렇게 하여 도선의 단부에는 볼이 형성된다.
캐패시터 양단 전압과 용량은 볼이 형성되는 도선의 직경에 따라 선택될수 있다. 예를 들면, 도선의 직경이 200μm이면 캐패시터의 용량을 500μF로 선택하여 70V의 전압차를 가지게 하는 것이 가장 좋다. 도선의 직경이 40μm이면 캐패시터의 용량을 15μF로 하여 전압차를 70V로 하게 되면 양호한 볼 형태를 얻을 수가 있다.
제6도 내지 제8도는 전자 마이크로회로와 전류 도체에 도선을 접착시키는 방법을 도시한다.
제1도에서도 도시된 바와 같이, 슬라이드 15위에는 지지부 16이 설치된 도체그리드가 놓이게 되고 이 지지부위에는 반도체 소자 17이 접속된다. 18은 전류도체이다. 모세관 5를 통해 연신된 도선의 단부에 형성된 볼이 반도체 소자 17의 접점위에 배치된다.
초음파발생기 1이 샤프트 2(제1도)에 대해 피보트하는데 의해 모세관은 반도체 소자를 향해 이동된다. 반도체 소자상의 접점에 볼이 압착되면 초음파 진동(제7도)에 의해 접착이 실행되며 볼은 편평한 헤드로 형성된다. 그후, 모세관은 상승되어 전류도체 18로 이동하게 된다. 도선은 모세관의 하측부에서 도체 18까지 팽팽하게 당겨지고 역시 초음파 에너지에 의해 도체 18에 접착된다. 제8도는 도선 접착이 끝난 상태를 도시한다. 접속도체와의 접착에는 모세관으로 처리될 필요가 없으나, 어떠한 바람직한 방법으로도 실행될수 있다.

Claims (5)

  1. 알루미늄 또는 알루미늄합금으로된 도선을 모세관을 통해 빼내어 보호성 가스분위기에서 도선과 전극간에 불꽃방전을 일으켜 상기 도선의 단부에 볼을 형성하고, 이 볼을 전자 마이크로회로상의 접점에 접속하여 도선을 접착시킨 후 이 도선을 접속도체에 접착시키는 도선접착법에 있어서, 두개의 보조전극간에 전기 불꽃방전을 일으켜 보호성가스의 이온화에 의해 플라즈마를 형성하고 이 플라즈마 내의 낮은 저항성으로 인해 전극과 도선간에는 25V 내지 200V의 전압으로 전기 불꽃방전이 일어나 도선단부에 볼이 형성되는 것을 특징으로 하는 도선접착법.
  2. 제1항에 있어서, 점화코일에 의한 불꽃방전으로 플라즈마를 형성하고, 보조전극간의 전압을 10,000V 내지 20,000V 인 것을 특징으로 하는 도선접착법.
  3. 제1항 또는 제2항에 있어서, 전기 캐패시터의 방전에 의해 전극과 도선간의 불꽃방전은 50 내지 100V의 전압차로 일어나는 것을 특징으로 하는 도선접착법.
  4. 제1항에 있어서, 볼이 형성되는 동안 두 보조전극간의 거리와 또한, 도선 단부와 전극간의 거리가 2mm정도로 유지되는 것을 특징으로 하는 도선접착법.
  5. 제1항에 있어서, 보호성가스는 볼이 형성되는 동안만 공급되는 것을 특징으로 하는 도선접착법.
KR1019810004107A 1980-10-29 1981-10-28 도선 접착법 KR890000585B1 (ko)

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NL8005922 1980-10-29
NL5922 1980-10-29
NL8005922A NL8005922A (nl) 1980-10-29 1980-10-29 Werkwijze voor het vormen van een draadverbinding.

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KR890000585B1 true KR890000585B1 (ko) 1989-03-21

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Publication number Priority date Publication date Assignee Title
US4476365A (en) * 1982-10-08 1984-10-09 Fairchild Camera & Instrument Corp. Cover gas control of bonding ball formation
US4549059A (en) * 1982-11-24 1985-10-22 Nec Corporation Wire bonder with controlled atmosphere
US4476366A (en) * 1983-02-01 1984-10-09 Fairchild Camera & Instrument Corp. Controlled bonding wire ball formation
US4594493A (en) * 1983-07-25 1986-06-10 Fairchild Camera & Instrument Corp. Method and apparatus for forming ball bonds
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5628922A (en) * 1995-07-14 1997-05-13 Motorola, Inc. Electrical flame-off wand
DE29608277U1 (de) * 1996-04-30 1996-09-19 F&K Delvotec Bondtechnik Gmbh Vorrichtung zum Ball-Bonden
JP2003163235A (ja) * 2001-11-29 2003-06-06 Shinkawa Ltd ワイヤボンディング装置
TWI229022B (en) * 2002-06-20 2005-03-11 Esec Trading Sa Device with electrodes for the formation of a ball at the end of a wire
WO2014054305A1 (ja) * 2012-10-05 2014-04-10 株式会社新川 酸化防止ガス吹き出しユニット

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Publication number Priority date Publication date Assignee Title
CH568656A5 (en) * 1974-03-20 1975-10-31 Transistor Ag Welding of contact blobs to semiconductor lead wires - uses electric DC light arc of preset current strength for melting lead wire end
NL7406783A (nl) * 1974-05-21 1975-11-25 Philips Nv Werkwijze voor het aanbrengen van een draad- verbinding aan een halfgeleiderinrichting.
GB1536872A (en) * 1975-05-15 1978-12-20 Welding Inst Electrical inter-connection method and apparatus
GB1468974A (en) * 1975-05-23 1977-03-30 Ferranti Ltd Manufacture of semiconductor devices
GB1600021A (en) * 1977-07-26 1981-10-14 Welding Inst Electrical inter-connection method and apparatus

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IT8124731A0 (it) 1981-10-27
PL133893B1 (en) 1985-07-31
JPS5916409B2 (ja) 1984-04-16
MY8500623A (en) 1985-12-31
GB2086297B (en) 1983-12-21
BR8106902A (pt) 1982-07-13
ES8301390A1 (es) 1982-11-16
CH654142A5 (de) 1986-01-31
HK40885A (en) 1985-05-31
AU546818B2 (en) 1985-09-19
NL8005922A (nl) 1982-05-17
DE3141842C2 (ko) 1990-09-20
BE890887A (fr) 1982-04-27
AU7689381A (en) 1982-05-06
DE3141842A1 (de) 1982-10-21
GB2086297A (en) 1982-05-12
CA1178664A (en) 1984-11-27
FR2493044A1 (fr) 1982-04-30
PL233586A1 (ko) 1982-05-10
DD205294A5 (de) 1983-12-21
ES506580A0 (es) 1982-11-16
IT1139570B (it) 1986-09-24
SG21984G (en) 1985-01-04
KR830008394A (ko) 1983-11-18
FR2493044B1 (fr) 1986-03-28
JPS57102036A (en) 1982-06-24

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