KR830008394A - 도선 접착법 - Google Patents

도선 접착법 Download PDF

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Publication number
KR830008394A
KR830008394A KR1019810004107A KR810004107A KR830008394A KR 830008394 A KR830008394 A KR 830008394A KR 1019810004107 A KR1019810004107 A KR 1019810004107A KR 810004107 A KR810004107 A KR 810004107A KR 830008394 A KR830008394 A KR 830008394A
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KR
South Korea
Prior art keywords
bonding method
wire
ball
spark discharge
electrode
Prior art date
Application number
KR1019810004107A
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English (en)
Other versions
KR890000585B1 (ko
Inventor
에이. 반 드 파스 헤르마누스
비. 피. 얀쎈 요하네스
제이. 제이. 로렌쯔 빌헬무스
Original Assignee
디. 제이. 삭커스
엔. 브이. 필립스 글로 아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 디. 제이. 삭커스, 엔. 브이. 필립스 글로 아이람펜파브리켄 filed Critical 디. 제이. 삭커스
Publication of KR830008394A publication Critical patent/KR830008394A/ko
Application granted granted Critical
Publication of KR890000585B1 publication Critical patent/KR890000585B1/ko

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

내용 없음

Description

도선 접착법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 도선 접착 장치의 개요도.
제2도 내지 제4도는 각각 도선에 볼(ball)을 형성하는 장치의 횡단면도와 평면도 및 정면도.
제5도는 불꽃 방전을 일으키는 회로의 전기회로도.
제6도 내지 제8도는 각각 도선을 전자 마이크로회로와 전류도체에 접착시키는 방법을 도시한 도면.

Claims (5)

  1. 알루미늄 또는 알루미늄 합금으로된 도선을 모세관을 통해 빼내어 보호성 가스분위기에서 도선과 전극간에 불꽃방전을 일으켜 상기 도선의 단부에 볼을 형성하고, 이 볼을 전자 마이크로회로상의 접점에 접속하여 도선을 접착시킨 후 이 도선을 접속도체에 접착시키는 도선접착법에 있어서, 두개의 보조전극간에 전기 불꽃방전을 일으켜 보호성가스의 이온화에 의해 플라즈마를 형성하고 이 플라즈마 내의 낮은 저항성으로 인해 전극과 도선간에는 25V 내지 200V의 전압으로 전기 불꽃방전이 일어나 도선단부에 볼이 형성되는 것을 특징으로 하는 도선접착법.
  2. 제1항에 청구된 바와같은 도선접착법에 있어서, 점화코일에 의한 불꽃방전으로 플라즈마를 형성하고, 보조전극간의 전압을 10,000V 내지 20,000V 인 것을 특징으로 하는 도선접착법.
  3. 제1항 또는 제2항에 청구된 바와같은 도선접착법에 있어서, 전기 캐패시터의 방전에 의해 전극과 도선간의 불꽃방전은 50 내지 100V의 전압차로 일어나는 것을 특징으로 하는 도선접착법.
  4. 선행된 항들중의 어떤 한항에 청구된 바와같은 도선첩촉법에 있어서, 볼이 형성되는 동안 두 보조전극간의 거리와 또한, 도선 단부와 전극간의 거리가 2mm정도로 유지되는 것을 특징으로 하는 도선접착법.
  5. 선행된 항들중의 어떤 한항에 청구된 바와같은 도선첩촉법에 있어서, 보호성가스는 볼이 형성되는 동안만 공급되는 것을 특징으로 하는 도선접착법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019810004107A 1980-10-29 1981-10-28 도선 접착법 KR890000585B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL8005922 1980-10-29
NL5922 1980-10-29
NL8005922A NL8005922A (nl) 1980-10-29 1980-10-29 Werkwijze voor het vormen van een draadverbinding.

Publications (2)

Publication Number Publication Date
KR830008394A true KR830008394A (ko) 1983-11-18
KR890000585B1 KR890000585B1 (ko) 1989-03-21

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JP (1) JPS5916409B2 (ko)
KR (1) KR890000585B1 (ko)
AU (1) AU546818B2 (ko)
BE (1) BE890887A (ko)
BR (1) BR8106902A (ko)
CA (1) CA1178664A (ko)
CH (1) CH654142A5 (ko)
DD (1) DD205294A5 (ko)
DE (1) DE3141842A1 (ko)
ES (1) ES506580A0 (ko)
FR (1) FR2493044B1 (ko)
GB (1) GB2086297B (ko)
HK (1) HK40885A (ko)
IT (1) IT1139570B (ko)
MY (1) MY8500623A (ko)
NL (1) NL8005922A (ko)
PL (1) PL133893B1 (ko)
SG (1) SG21984G (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476365A (en) * 1982-10-08 1984-10-09 Fairchild Camera & Instrument Corp. Cover gas control of bonding ball formation
US4549059A (en) * 1982-11-24 1985-10-22 Nec Corporation Wire bonder with controlled atmosphere
US4476366A (en) * 1983-02-01 1984-10-09 Fairchild Camera & Instrument Corp. Controlled bonding wire ball formation
US4594493A (en) * 1983-07-25 1986-06-10 Fairchild Camera & Instrument Corp. Method and apparatus for forming ball bonds
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5628922A (en) * 1995-07-14 1997-05-13 Motorola, Inc. Electrical flame-off wand
DE29608277U1 (de) * 1996-04-30 1996-09-19 F&K Delvotec Bondtechnik Gmbh Vorrichtung zum Ball-Bonden
JP2003163235A (ja) * 2001-11-29 2003-06-06 Shinkawa Ltd ワイヤボンディング装置
TWI229022B (en) * 2002-06-20 2005-03-11 Esec Trading Sa Device with electrodes for the formation of a ball at the end of a wire
WO2014054305A1 (ja) * 2012-10-05 2014-04-10 株式会社新川 酸化防止ガス吹き出しユニット

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH568656A5 (en) * 1974-03-20 1975-10-31 Transistor Ag Welding of contact blobs to semiconductor lead wires - uses electric DC light arc of preset current strength for melting lead wire end
NL7406783A (nl) * 1974-05-21 1975-11-25 Philips Nv Werkwijze voor het aanbrengen van een draad- verbinding aan een halfgeleiderinrichting.
GB1536872A (en) * 1975-05-15 1978-12-20 Welding Inst Electrical inter-connection method and apparatus
GB1468974A (en) * 1975-05-23 1977-03-30 Ferranti Ltd Manufacture of semiconductor devices
GB1600021A (en) * 1977-07-26 1981-10-14 Welding Inst Electrical inter-connection method and apparatus

Also Published As

Publication number Publication date
IT8124731A0 (it) 1981-10-27
PL133893B1 (en) 1985-07-31
JPS5916409B2 (ja) 1984-04-16
MY8500623A (en) 1985-12-31
GB2086297B (en) 1983-12-21
BR8106902A (pt) 1982-07-13
ES8301390A1 (es) 1982-11-16
CH654142A5 (de) 1986-01-31
HK40885A (en) 1985-05-31
AU546818B2 (en) 1985-09-19
NL8005922A (nl) 1982-05-17
DE3141842C2 (ko) 1990-09-20
KR890000585B1 (ko) 1989-03-21
BE890887A (fr) 1982-04-27
AU7689381A (en) 1982-05-06
DE3141842A1 (de) 1982-10-21
GB2086297A (en) 1982-05-12
CA1178664A (en) 1984-11-27
FR2493044A1 (fr) 1982-04-30
PL233586A1 (ko) 1982-05-10
DD205294A5 (de) 1983-12-21
ES506580A0 (es) 1982-11-16
IT1139570B (it) 1986-09-24
SG21984G (en) 1985-01-04
FR2493044B1 (fr) 1986-03-28
JPS57102036A (en) 1982-06-24

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