GB2086297A - Method of Forming a Wire Bond - Google Patents

Method of Forming a Wire Bond Download PDF

Info

Publication number
GB2086297A
GB2086297A GB8132183A GB8132183A GB2086297A GB 2086297 A GB2086297 A GB 2086297A GB 8132183 A GB8132183 A GB 8132183A GB 8132183 A GB8132183 A GB 8132183A GB 2086297 A GB2086297 A GB 2086297A
Authority
GB
United Kingdom
Prior art keywords
wire
ball
electrode
spark discharge
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8132183A
Other versions
GB2086297B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2086297A publication Critical patent/GB2086297A/en
Application granted granted Critical
Publication of GB2086297B publication Critical patent/GB2086297B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01041—Niobium [Nb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

A wire (6) made of aluminium or an aluminium alloy is passed through a capillary (5) and a first spark discharge is produced in a protective gas atmosphere between two auxiliary electrodes (12, 13). As a result of this the protective gas is ionised to form a plasma having such a low resistance that a spark discharge takes place between an electrode (11) and the wire (6) at a voltage of between 25V and 200V. Thus a ball is formed at the end of the wire which is then bonded between an electronic microcircuit (17) and a contact area (18) using the capillary. <IMAGE>

Description

SPECIFICATION Method of Forming a Wire Bond The invention relates to a method of forming a wire bond between a contact place on an electric microcircuit and a connection conductor, in which method a wire of aluminium or an aluminium alloy is passed through a capillary and a ball is formed at the end of the wire by means of a spark discharge between the wire and an electrode, which spark discharge takes place in a protective gas atmosphere, after which the wire is bonded by means of the capillary to the contact place on the electronic microcircuit and thereafter the wire is bonded to the connection conductor.
For making a wire bond between a contact place on, for example, a semiconductor body and an electric conductor it has proved favourable to use a ball bond in adhering the wire to the semiconductor body. The ball can be connected to the contact place by means of an ultrasonic welding tool and/or by means of a thermocompression bond. In the case of a gold wire the ball can preferably be formed by means of an electric spark discharge. The formation of a ball at a wire made of aluminium or an aluminium alloy, however, presents difficulties.
It has already been suggested to form a ball at the end of an aluminium wire by means of an electric spark discharge by contacting the wire and the electrode with each other for a short period of time at a voltage difference between the wire and the electrode of less than 200 V and in a protective gas atmosphere. The end of the wire melts and the contact is interrupted, as a result of which a spark discharge takes place and the ball is formed. The protective gas serves to prevent oxidation while forming the ball. This method of providing the ball, in which contact between the wire and the electrode is necessary, is complicated for mass production. Furthermore excessive wear of the electrode occurs which therefore has often to be replaced.
It has also been suggested to arrange that the end of the wire and the electrode have a small separation and a voltage difference of 350 to 10,000 Volts, so as to obtain a spark discharge.
The ohmic resistance in the discharge current circuit is chosen to be so that the peak value of the current density in the wire cross-section is 1.2x109 A/m2 to 13.5x109A/m2. However, it is to be preferred to cause the spark discharge to take place at a lower voltage. In addition, in this known method a very small distance, approximately 0.125 mm, must be adjusted rather accurately between the wire end and the electrode. However, in mass production it is undesirable to depend on an accurate adjustment and the distance between the wire end and the electrode is furthermore preferably chosen to be considerably larger than in the known method.
It is the object of the invention to provide a method in which a spark discharge is obtained with the use of a comparatively small voltage difference between the wire end and the electrode, and in which the mutual distance between these two may be comparatively large and need not be accurately adjusted.
According to the invention a method having the steps mentioned in the opening paragraph is characterized in that an electric spark discharge is produced between two auxiliary electrodes such that a plasma is formed by ionisation of the protective gas, and in that the ball is formed at the end of the wire by an electric spark discharge which is produced between the electrode and the wire at a voltage between 25 and 200 V due to the low resistance in the plasma.
The discharge between the auxiliary electrodes between which a rather large voltage difference may be formed produces a plasma in the protective gas. The resistance of the plasma is very low as compared with the resistance of the unionised gas. As a result of this, with a comparatively small voltage difference between the electrode and the wire, a spark discharge is produced which forms the ball at the wire. The spacing between the electrode and wire end is not critical; when the resistance of the gas becomes sufficiently low the ball-forming spark discharge will take place automatically.
Using this method, which is suitable for mass production, a ball of a readily repreducible size is formed at a wire made of aluminium or an aluminium alloy. This size depends on the voltage difference between the electrode and the wire and on the electric charge; it has been found that in order to obtain a good shape of the ball the voltage difference should preferably be smaller than 200 V.
In a favourable embodiment of a method in accordance with the invention the plasma is formed by a spark discharge by means of an ignition coil, the voltage between the auxiliary electrodes being the range of 10,000 to 20,000 Volts. In that case only simple means are necessary to form the plasma in the protective gas.
It is recommendable for the spark discharge between the electrode and the wire to be obtained at a voltage difference from 50 to 100 v by discharge of an electric capacitor.
In a preferred embodiment of the method in accordance with the invention the spacing between the electrode and the end of the wire is kept at approximately 2 mm during the formation of the ball. Although the spacing can be chosen to be larger or smaller, the spacing of approximately 2 mm has proved to be suitable both for mass production and to obtain a favourable ball shape.
The invention will now be exemplified by an embodiment with reference to the accompanying drawings, in which: Fig. 1 shows diagrammatically a device for providing a wire bond, Figs. 2 to 4 are a longitudinal sectional view, a plan view and a front elevation, respectively, of an apparatus in which the ball is formed at the wire, Fig. 5 shows an electric circuit to obtain the spark discharge, Figs. 6 to 8 show schematically the bonding of the wire to the electronic microcircuit and to a current conductor respectively.
Fig. 1 shows an ultrasonic generator 1 pivoted about an axis 2 which is incorporated in a support 3. The welding arm 4 of the generator 1 has a capillary 5 through which a wire 6 of aluminium or an aluminium alloy is passed. A ball is to be formed at the end of the wire 6. For that purpose, the wire is guided into a slot 7 of a spark unit 8 (see also Figs. 2, 3 and 4). The body of the spark unit consists of an insulating material, for example a synthetic resin. A bore 9 opens into the slot 7 through which a protective gas, for example argon, can be passed via a hose 10. An electrode 1 1, as well as two auxiliary electrodes 12 and 13, are incorporated in the spark unit 8. The spacing between the ends of the auxiliary electrodes is preferably approximately 2 mm. The spacing between the electrode 11 and the end of the wire 6 is also approximately 2 mm.The spark unit can be rotated about a shaft 19 and can thus be moved towards and also away from the capillary 5.
The Fig. 1 device also comprises a support 14 on which a slide 15 is present. A conductor grid may be placed on the slide 15. An electronic microcircuit in the form of a semiconductor device 17 is present on a supporting part 16 of the conductor grid. The device 17 has contact places to provide an electrically conductive wire. The wire is guided from a contact place of the semiconductor device 17 to a conductor 18 of the conductor grid.
The formation of a ball at the wire 6 of aluminium or an aluminium alloy will be explained with reference to Figs. 2 to 5. The end of the wire 6 is provided in the slot 7 of the spark unit 8. A protective gas, for example argon, is passed into the slot via a bore 9; the gas flow preferably takes place for a short period of time, namely only during the formation of the ball. Between the auxiliary electrodes 12 and 13 a voltage difference is generated, preferably of 10,000 to 20,000 Volts by means of an ignition coil so that a spark discharge takes place. Said spark discharge causes a plasma in the protective argon gas. As a result of this the electric resistance in said gas drops to a very low value. A voltage difference of 200 V or less, preferably approximately 70 V, is maintained between the electrode 11 and the end of the wire 6.
As a result of the low value of the electric resistance in the plasma a spark discharge may take place between the electrode 11 and the end of the wire 6, in spite of the fact that the spacing between the two may be comparatively large; for example it may be 2 mm. As a result of the spark discharge a ball is formed at the end of the wire, the size of said ball being readily reproducible.
Fig. 5 shows diagramatically a circuit arrangement to generate a spark to form a ball at the aluminium wire. A pulse 20 originating from a monostabe multivibrator (not shown) brings the base of a transistor 21 to a sufficiently high voltage to cause current to flow through the transistor. As a result of said current the base of a transistor 22 is brought to such a voltage that current also flows through transistor 22. The current through transistor 22 is sufficiently large to control a high-voltage transistor 23; current flows through the primary 24 of an ignition coil 26. At the end of the short pulse 20, the transistors 21,22 and 23 successively switch off and the current in the primary 24 of the ignition coil suddenly drops to zero. By induction, a high voltage, for example 20,000 V, is generated in the secondary 25 of the ignition coil.As a result of this the electric spark discharge is formed between the electrodes 12 and 13 and a plasma is formed in the protective argon gas.
An electric capacitor 27 is connected between the wire 6 and the electrode 11. The capacitor is connected to a voltage source and is hence charged. As a result of the low resistance in the plasma the capacitor 27 will discharge while forming a spark between the electrode 11 and the end of the wire 6. The ball is thus formed at the end of the wire.
The voltage across and the capacitance of the capacitor 27 can be chosen depending on the diameter of the wire at which the ball is formed.
For example, it has proved to be advantageous with a wire having a dimaeter of 200 ym to use a capacitor of 500 yF with a voltage difference of 70 V. With a wire having a diameter of 40 ,um a favourable ball shape was obtained by discharge of a capacitor of 15 ,uF with a voltage difference of 70 V.
Figs. 6 to 8 show the bonding of the wire at one end of the semiconductor device 1 7 and at the other end to a current conductor 18.
On the slide 15 also shown in Fig. 1 a conductor grid is placed having a supporting part 16 on which a semiconductor device 17 is connected. The current conductor is referenced 18. The capillary 5 having therein the wire 6 at which a ball has been formed is present above a contact place on the semiconductor device 17.
The capillary is moved towards the semiconductor device, for example by pivoting the ultrasonic generator 1 about shaft 2 (Fig. 1).
When the ball pressed against the contact place on the semiconductor element the bond is produced by means of ultrasonic vibrations (Fig.
7), the ball being formed into a flat head. The capillary is then raised and moved towards a flat head. The capillary is then raised and moved towards the current conductor 18. The wire is clamped there between the conductor 18 and the lower side of the capillary and bonded to conductor 18 by means of ultrasonic energy. Fig.
8 shows the finished wire bond. The bond with the connection conductor has not necessarily to be made with the capillary, but can be done in any desired manner.

Claims (6)

Claims
1. A method of forming a wire bond between a contact place on an electronic microcircuit and a connection conductor, in which method a wire made of aluminium or an aluminium alloy is passed through a capillary and a ball is formed at the end of the wire by means of a spark discharge between the wire and an electrode, which spark discharge takes place in a protective gas atmosphere, after which the wire is bonded by means of the capillary to the contact place on the electronic microcircuit and thereafter the wire is bonded to the connection conductor, characterized in that an electric spark discharge is produced between two auxiliary electrodes such that a plasma is formed by ionisation of the protective gas, and in that the ball is formed at the end of the wire by an electric spark discharte which is produced between the electrode and the wire at a voltage between 25 V and 200 V due to the low resistance in the plasma.
2. A method as claimed in Claim 1, characterized in that the plasma is formed by a spark discharge by means of an ignition coil, the voltage between the auxiliary electrodes being in the range of 10,000 to 20,000 V.
3. A method as claimed in Claim 1 or 2, characterized in that the spark discharge between the electrode and the wire is obtained at a voltage difference of 50 to 100 V by discharge of an electric capacitor.
4. A method as claimed in any of the preceding Claims, characterized in that the spacing between the electrode and the end of the wire and the spacing between the auxiliary electrodes during formation of the ball is kept at approximately 2 mm.
5. A method as claimed in any of the preceding Claims, characterized in that the protective gas is supplied only during the formation of the ball.
6. A method of forming a wire bond substantially as herein described with reference to the accompanying drawings.
GB8132183A 1980-10-29 1981-10-26 Method of forming a wire bond Expired GB2086297B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8005922A NL8005922A (en) 1980-10-29 1980-10-29 METHOD FOR FORMING A WIRE JOINT

Publications (2)

Publication Number Publication Date
GB2086297A true GB2086297A (en) 1982-05-12
GB2086297B GB2086297B (en) 1983-12-21

Family

ID=19836074

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8132183A Expired GB2086297B (en) 1980-10-29 1981-10-26 Method of forming a wire bond

Country Status (18)

Country Link
JP (1) JPS5916409B2 (en)
KR (1) KR890000585B1 (en)
AU (1) AU546818B2 (en)
BE (1) BE890887A (en)
BR (1) BR8106902A (en)
CA (1) CA1178664A (en)
CH (1) CH654142A5 (en)
DD (1) DD205294A5 (en)
DE (1) DE3141842A1 (en)
ES (1) ES8301390A1 (en)
FR (1) FR2493044B1 (en)
GB (1) GB2086297B (en)
HK (1) HK40885A (en)
IT (1) IT1139570B (en)
MY (1) MY8500623A (en)
NL (1) NL8005922A (en)
PL (1) PL133893B1 (en)
SG (1) SG21984G (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111427A2 (en) * 1982-10-08 1984-06-20 Fairchild Semiconductor Corporation Cover gas control of bonding ball formation
EP0115998A2 (en) * 1983-02-01 1984-08-15 FAIRCHILD CAMERA &amp; INSTRUMENT CORPORATION Controlled bonding wire ball formation
EP0133118A2 (en) * 1983-07-25 1985-02-13 Fairchild Semiconductor Corporation Method and apparatus for forming ball bonds
US4549059A (en) * 1982-11-24 1985-10-22 Nec Corporation Wire bonder with controlled atmosphere
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5628922A (en) * 1995-07-14 1997-05-13 Motorola, Inc. Electrical flame-off wand
US6739494B2 (en) * 2002-06-20 2004-05-25 Esec Trading Sa Device with electrodes for the formation of a ball at the end of a wire
US6776324B2 (en) * 2001-11-29 2004-08-17 Kabushiki Kaisha Shinkawa Wire bonding apparatus

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555813B1 (en) * 1983-09-28 1986-06-20 Hitachi Ltd SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
DE29608277U1 (en) * 1996-04-30 1996-09-19 F&K Delvotec Bondtechnik GmbH, 85521 Ottobrunn Ball bonding device
CN104335338B (en) * 2012-10-05 2017-09-26 株式会社新川 Oxidation prevents gas blowing unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH568656A5 (en) * 1974-03-20 1975-10-31 Transistor Ag Welding of contact blobs to semiconductor lead wires - uses electric DC light arc of preset current strength for melting lead wire end
NL7406783A (en) * 1974-05-21 1975-11-25 Philips Nv PROCEDURE FOR MOUNTING A WIRE CONNECTION TO A SEMICONDUCTOR DEVICE.
GB1536872A (en) * 1975-05-15 1978-12-20 Welding Inst Electrical inter-connection method and apparatus
GB1468974A (en) * 1975-05-23 1977-03-30 Ferranti Ltd Manufacture of semiconductor devices
GB1600021A (en) * 1977-07-26 1981-10-14 Welding Inst Electrical inter-connection method and apparatus

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111427A2 (en) * 1982-10-08 1984-06-20 Fairchild Semiconductor Corporation Cover gas control of bonding ball formation
EP0111427A3 (en) * 1982-10-08 1985-08-28 Fairchild Camera & Instrument Corporation Cover gas control of bonding ball formation
US4549059A (en) * 1982-11-24 1985-10-22 Nec Corporation Wire bonder with controlled atmosphere
EP0115998A2 (en) * 1983-02-01 1984-08-15 FAIRCHILD CAMERA &amp; INSTRUMENT CORPORATION Controlled bonding wire ball formation
EP0115998A3 (en) * 1983-02-01 1986-12-30 FAIRCHILD CAMERA &amp; INSTRUMENT CORPORATION Controlled bonding wire ball formation
EP0133118A2 (en) * 1983-07-25 1985-02-13 Fairchild Semiconductor Corporation Method and apparatus for forming ball bonds
EP0133118A3 (en) * 1983-07-25 1986-04-23 Fairchild Semiconductor Corporation Method and apparatus for forming ball bonds
US4594493A (en) * 1983-07-25 1986-06-10 Fairchild Camera & Instrument Corp. Method and apparatus for forming ball bonds
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5628922A (en) * 1995-07-14 1997-05-13 Motorola, Inc. Electrical flame-off wand
US6776324B2 (en) * 2001-11-29 2004-08-17 Kabushiki Kaisha Shinkawa Wire bonding apparatus
US6739494B2 (en) * 2002-06-20 2004-05-25 Esec Trading Sa Device with electrodes for the formation of a ball at the end of a wire

Also Published As

Publication number Publication date
IT8124731A0 (en) 1981-10-27
DE3141842C2 (en) 1990-09-20
KR890000585B1 (en) 1989-03-21
BR8106902A (en) 1982-07-13
DE3141842A1 (en) 1982-10-21
GB2086297B (en) 1983-12-21
HK40885A (en) 1985-05-31
JPS57102036A (en) 1982-06-24
PL133893B1 (en) 1985-07-31
FR2493044B1 (en) 1986-03-28
CA1178664A (en) 1984-11-27
BE890887A (en) 1982-04-27
IT1139570B (en) 1986-09-24
CH654142A5 (en) 1986-01-31
ES506580A0 (en) 1982-11-16
AU7689381A (en) 1982-05-06
SG21984G (en) 1985-01-04
JPS5916409B2 (en) 1984-04-16
AU546818B2 (en) 1985-09-19
PL233586A1 (en) 1982-05-10
ES8301390A1 (en) 1982-11-16
FR2493044A1 (en) 1982-04-30
DD205294A5 (en) 1983-12-21
KR830008394A (en) 1983-11-18
MY8500623A (en) 1985-12-31
NL8005922A (en) 1982-05-17

Similar Documents

Publication Publication Date Title
US5095187A (en) Weakening wire supplied through a wire bonder
US4098447A (en) Bonding method and apparatus
GB2086297A (en) Method of Forming a Wire Bond
EP0043692B1 (en) Ball bonding of wire
US4388512A (en) Aluminum wire ball bonding apparatus and method
US1066468A (en) Process and apparatus for electric welding.
US4476366A (en) Controlled bonding wire ball formation
EP0058010A1 (en) High voltage welding
US3950631A (en) Device for welding a wire by means of thermo-compression bonding
US4489231A (en) Method for preparing electrical conductor
EP0185033A1 (en) Method and apparatus for forming a ball at the end of a wire
US4687897A (en) Flame-off limited circuit for wire bonding ball forming apparatus
US7041934B2 (en) Micro-welder
US3172188A (en) Method of manufacture of semiconductor devices
NL7406783A (en) PROCEDURE FOR MOUNTING A WIRE CONNECTION TO A SEMICONDUCTOR DEVICE.
KR100904745B1 (en) Wire bonding process for insulated wires
US6759618B2 (en) Method for connecting a current supply wire with a contact patch of an electrical lamp
SU1532248A1 (en) Method and apparatus for automatic welding on wire leads
JPS5943537A (en) Wire bonding device
US20030234271A1 (en) Device with electrodes for the formation of a ball at the end of a wire
JP2904618B2 (en) Ball forming device for wire bonder
US3612940A (en) Lamp filament structure
EP0758735A2 (en) Pyrotechnic initiator and process of making same
JPH1041335A (en) Peeling device for coated wire for wire bonding
JP2000294595A (en) Wire bonding method

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941026