CH654142A5 - METHOD FOR PRODUCING A WIRE CONNECTION. - Google Patents

METHOD FOR PRODUCING A WIRE CONNECTION. Download PDF

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Publication number
CH654142A5
CH654142A5 CH6815/81A CH681581A CH654142A5 CH 654142 A5 CH654142 A5 CH 654142A5 CH 6815/81 A CH6815/81 A CH 6815/81A CH 681581 A CH681581 A CH 681581A CH 654142 A5 CH654142 A5 CH 654142A5
Authority
CH
Switzerland
Prior art keywords
wire
spark discharge
electrode
ball
voltage
Prior art date
Application number
CH6815/81A
Other languages
German (de)
Inventor
De Pas Hermanus Antonius Van
Johannes Bernardus Pet Janssen
Wilhelmus Jan Jacob Lorenz
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH654142A5 publication Critical patent/CH654142A5/en

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    • HELECTRICITY
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    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Description

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung einer Drahtverbindung zwischen einer Kontaktstellt auf einer elektronischen Mikroschaltung und einem Anschlussleiter, mit einem Draht aus Aluminium oder einer Aluminiumlegierung, der durch eine Kapillare geführt wird, bei dem am Ende des Drahtes eine Kugel mit Hilfe einer Funkenentladung zwischen dem Draht und der Elektrode gebildet wird, wobei diese Funkenentladung in einer schützenden Gasatmosphäre stattfindet und danach der Draht mit Hilfe der Kapillare mit einer Kontaktstelle auf der elektronischen Mikroschaltung Verbunden wird, wonach eine Anschliessung mit dem Anschlussleiter folgt. The invention relates to a method for producing a wire connection between a contact point on an electronic microcircuit and a connecting conductor, with a wire made of aluminum or an aluminum alloy, which is guided through a capillary, in which a ball at the end of the wire by means of a spark discharge is formed between the wire and the electrode, this spark discharge takes place in a protective gas atmosphere and then the wire is connected with the help of the capillary to a contact point on the electronic microcircuit, followed by a connection with the connecting conductor.

Zur Herstellung einer Drahtverbindung zwischen einer Kontaktstelle auf z.B. einem Halbleiterkörper und einem elektrischen Leiter hat es sich als günstig erwiesen, vor Befestigung des Drahtes an dem Halbleiterkörper eine Kugelverbindung («ball bond») zu verwenden. Die Kugel kann mit Hilfe eines Ultraschallwerkzeuges oder mittels einer Wärme-Druckverbindung, oder gegebenenfalls mit einer Kombination dieser beiden Möglichkeiten an der Kontaktstelle befestigt werden. Bei einem aus Gold bestehenden Draht kann die Kugel vorzugsweise mit Hilfe einer elektrischen Funkenentladung gebildet werden. Die Bildung einer Kugel an einem Draht aus Aluminium oder einer Aluminiumlegxerung bereitet jedoch Schwierigkeiten. To establish a wire connection between a contact point on e.g. a semiconductor body and an electrical conductor, it has proven to be advantageous to use a ball bond before attaching the wire to the semiconductor body. The ball can be attached to the contact point with the aid of an ultrasound tool or by means of a heat-pressure connection, or if necessary using a combination of these two options. In the case of a wire made of gold, the ball can preferably be formed using an electrical spark discharge. However, the formation of a ball on an aluminum wire or aluminum alloy is difficult.

Es wurde bereits vorgeschlagen, mit Hilfe einer elektrischen Funkenentladung eine Kugel am Ende eines Aluminiumdrahtes dadurch zu bilden, dass bei einem Spanriungsunterschied zwischen dem Draht und der Elektrode von weniger als 200 V in einer schützenden Gasatmosphäre der Draht und die Elektrode kurzzeitig miteinander in Berührung gebracht werden. Dabei schmilzt das Ende des Drahtes und die Berührung wird unterbrochen, was zur Folge hat, dass eine Funkenentladung stattfindet, die zu der Bildung der Kugel führt. Das Schutzgas dient dazu, zu verhindern, dass bei der Bildung der Kugel Oxydationserscheinungen auftreten. Dieses Verfahren zur Anbringung der Kugel, bei dem Berührung zwischen dem Draht und der Elektrode erforderlich ist, ist für Massenherstellung umständlich. Weiter tritt eine ausserordentlich starke Abnutzung der Elektrode auf, die deshalb oft ersetzt werden muss. It has already been proposed to form a ball at the end of an aluminum wire with the aid of an electrical spark discharge by briefly bringing the wire and the electrode into contact with one another if the voltage difference between the wire and the electrode is less than 200 V in a protective gas atmosphere . The end of the wire melts and the contact is interrupted, with the result that a spark discharge takes place, which leads to the formation of the ball. The protective gas is used to prevent the formation of oxidation from occurring when the ball is formed. This method of attaching the ball, which requires contact between the wire and the electrode, is cumbersome for mass production. There is also an extremely high level of wear on the electrode, which therefore often has to be replaced.

Weiter wurde vorgeschlagen, bei einem Spannungsunterschied von 350 V bis 10 000 V das Drahtende und die Elektrode in einen geringen Abstand voneinander zu bringen, um eine Funkenentladung zu erhalten, wobei der ohmsche Widerstand in dem Entladungsstromkreis derart gewählt wird, dass der Spitzenwert der Stromdichte in dem Drahtquerschnitt 1,2 . 109 A/m2 bis 13,5 . 109 A/m2 beträgt. Es ist jedoch zu bevorzugen, dass die Funkenentladung bei einer niedrigeren Spannung stattfindet. Ausserdem muss bei diesem bekannten Verfahren ein sehr geringer Abstand (etwa 0,125 mm) zwischen dem Drahtende und der Elektrode ziemlich genau eingestellt werden. Bei der Massenherstellung will man aber vorzugsweise nicht von einer genauen Einstellung abhängig sein und weiter wird der Abstand zwischen dem Drahtende und der Elektrode vorzugsweise erheblich grösser als bei dem bekannten Verfahren gewählt. It was further proposed to bring the wire end and the electrode a short distance apart at a voltage difference of 350 V to 10,000 V, in order to obtain a spark discharge, the ohmic resistance in the discharge circuit being chosen such that the peak value of the current density in the wire cross section 1.2. 109 A / m2 to 13.5. 109 A / m2. However, it is preferred that the spark discharge take place at a lower voltage. In addition, in this known method, a very small distance (about 0.125 mm) between the wire end and the electrode has to be set fairly precisely. In mass production, however, one preferably does not want to be dependent on an exact setting, and further the distance between the wire end and the electrode is preferably chosen to be considerably larger than in the known method.

Die Erfindung hat die Aufgabe, ein Verfahren eingangs genannter Art zu schaffen, bei dem eine Funkenentladung bei Anwendung eines verhältnismässig kleinen Spannungsunterschiedes zwischen dem Drahtende und der Elektrode erhaltenwird und bei dem der gegenseitige Abstand zwischen Drahtende und Elektrode verhältnismässig gross sein kann und nicht genau eingestellt zu werden braucht. Dazu wird nach der Erfindung eine elektrische Funkenentladung zwischen zwei Hilfselektroden hervorgerufen, wobei durch Ionisierung des Schutzgases ein Plasma erzeugt wird, während durch den niedrigen Widerstand im Plasma eine elektrische Funkenentladung zwischen der Elektrode und dem Draht bei einer Spannung zwischen 25 V und 200 V hervorgerufen wird, wobei durch diese Funkenentladung eine Kugel am Ende des Drahtes gebildet wird. The invention has for its object to provide a method of the type mentioned in which a spark discharge is obtained using a relatively small voltage difference between the wire end and the electrode and in which the mutual distance between the wire end and the electrode can be relatively large and not precisely adjusted are needed. For this purpose, according to the invention, an electrical spark discharge is produced between two auxiliary electrodes, a plasma being generated by ionizing the protective gas, while the low resistance in the plasma causes an electrical spark discharge between the electrode and the wire at a voltage between 25 V and 200 V. , with this spark discharge forming a ball at the end of the wire.

Die Entladung zwischen den Hilfselektroden, zwischen denen ein ziemlich grosser Spannungsunterschied erzeugt werden darf, erzeugt ein Plasma im Schutzgas. Der Widerstand im Plasma ist sehr niedrid gegenüber dem Widerstand in dem un-ionisierten Gas." Dadurch wird bei einem verhältnismässig kleinen Spannungsunterschied zwischen der Elektrode und dem Draht eine Funkenentladung erhalten, durch die die Kugel an dem Draht gebildet wird. Der Abstand zwischen Elektrode und Drahtende ist dabei nicht kritisch; wenn der Widerstand des Gases genügend niedrig geworden ist, wird die kugelbildende Funkenentladung automatisch stattfinden. The discharge between the auxiliary electrodes, between which a fairly large voltage difference can be generated, creates a plasma in the protective gas. The resistance in the plasma is very low compared to the resistance in the non-ionized gas. "With a relatively small voltage difference between the electrode and the wire, a spark discharge is obtained, by which the ball is formed on the wire. The distance between the electrode and The end of the wire is not critical; if the resistance of the gas has become sufficiently low, the ball-forming spark discharge will take place automatically.

Durch dieses für die Massenherstellung geeignete Verfahren wird an einem Draht aus Aluminium oder einer Aluminiumlegierung eine Kugel mit einer gut reproduzierbaren Grösse gebildet. Diese Grösse ist von dem Spannungsunterschied zwischen der Elektrode und dem Draht und von der elektrischen Ladung abhängig; es hat sich herausgestellt, dass zum Erhalten einer günstigen Form der Kugel der Spannungsunterschied vorzugsweise kleiner als 200 V sein muss. This method, which is suitable for mass production, forms a ball with a reproducible size on a wire made of aluminum or an aluminum alloy. This variable depends on the voltage difference between the electrode and the wire and on the electrical charge; it has been found that the voltage difference must preferably be less than 200 V in order to obtain a favorable shape of the ball.

Bei einer günstigen Ausführungsform eines Verfahrens nach der Erfindung wird das Plasma durch eine Funkenentladung mit Hilfe einer Spule erzeugt, wobei die Spannung zwischen den Hilfselektroden in der Grössenordnung von 10 000 - 20 000 V liegt. Dann sind zur Erzeugung des Plasmas in dem Schutzgas nur einfache Mittel erforderlich. In a favorable embodiment of a method according to the invention, the plasma is generated by a spark discharge with the aid of a coil, the voltage between the auxiliary electrodes being of the order of 10,000-20,000 V. Then only simple means are required to generate the plasma in the protective gas.

Es ist zu bevorzugen, dass die Funkenentladung zwischen der Elektrode und dem Draht durch Entladung eines elektrischen Kondensators bei einer Spannung von 50 - 100 V erhalten wird. It is preferable that the spark discharge between the electrode and the wire is obtained by discharging an electric capacitor at a voltage of 50-100V.

In einer bevorzugten Ausführungsform des Verfahrens nach In a preferred embodiment of the method according to

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der Erfindung wird während der Bildung der Kugel der Abstand zwischen der Elektrode und dem Ende des Drahtes auf einem Wert in der Grössenordnung von 2 mm gehalten. Der Abstand kann zwar grösser oder kleiner gewählt werden, aber der Abstand von etwa 2 mm hat sich sowohl für die Massenherstellung als auch zum Erhalten einer günstigen Kugelform als besonders geeignet erwiesen. According to the invention, the distance between the electrode and the end of the wire is kept on the order of 2 mm during the formation of the sphere. The distance can be chosen larger or smaller, but the distance of about 2 mm has proven to be particularly suitable both for mass production and for obtaining a favorable spherical shape.

Eine Ausführungsform der Erfindung ist in der Zeichnung dargestellt und wird im folgenden näher beschrieben. An embodiment of the invention is shown in the drawing and is described in more detail below.

Es zeigen: Show it:

Fig. 1 schematisch eine Vorrichtung zum Anbringen der Drahtverbindung, 1 schematically shows a device for attaching the wire connection,

Fig. 2 bis 4 im Längsschnitt, in Draufsicht bzw. in Vorderansicht ein Gerät, in dem die Kugel an dem Draht gebildet wird. Fig. 2 to 4 in longitudinal section, in plan view or in front view of a device in which the ball is formed on the wire.

Fig. 5 eine elektrische Schaltung zum Erhalten der Funkenentladung, und 5 shows an electrical circuit for maintaining the spark discharge, and

Fig. 6 bis 8 das Verfahren zum Verbinden des Drahtes mit der elektronischen Mikroschaltung bzw. mit einem Stromleiter. 6 to 8 the method for connecting the wire to the electronic microcircuit or to a current conductor.

In Fig. 1 ist ein Ultraschallgenerator 1 dargestellt, der um eine Welle 2 schwenkbar ist, die in eine Stütze 3 aufgenommen ist. Der Schweissarm 4 des Generators 1 ist mit einer Kapillare 5 versehen, durch die ein Draht 6 aus Aluminium oder einer Aluminiumlegierung geführt ist. Am Ende des Drahtes 6 muss eine Kugel gebildet werden. Der Draht ist dazu in einen Schlitz 7 einer Funkeneinheit 8 geführt (siehe auch Fig. 2, 3 und 4). Der Körper der Funkeneinheit besteht aus einem Isoliermaterial, z.B. einem Kunststoff. In dem Schlitz 7 endet eine Bohrung 9, durch die ein Schutzgas, z.B. Argon, über einen Schlauch 10 eingeführt wird. In die Funkeneinheit 8 sind eine Elektrode 11 sowie zwei Hilfselektroden 12 und 13 eingenommen. Der Abstand zwischen den Enden der Hilfselektroden ist vorzugsweise etwa 2 mm. Auch der Abstand zwischen der Elektrode 11 und dem Ende des Drahtes 6 ist etwa 2 mm. Die Funkeneinheit ist um eine Welle 19 schwenkbar und kann somit zu der Kapillare 5 hin und auch von der Kapillare fort gedreht werden. In Fig. 1, an ultrasonic generator 1 is shown, which is pivotable about a shaft 2, which is received in a support 3. The welding arm 4 of the generator 1 is provided with a capillary 5 through which a wire 6 made of aluminum or an aluminum alloy is passed. A ball must be formed at the end of the wire 6. For this purpose, the wire is guided into a slot 7 of a spark unit 8 (see also FIGS. 2, 3 and 4). The body of the spark unit is made of an insulating material, e.g. a plastic. A bore 9 ends in the slot 7, through which a protective gas, e.g. Argon, is introduced via a hose 10. An electrode 11 and two auxiliary electrodes 12 and 13 are incorporated in the spark unit 8. The distance between the ends of the auxiliary electrodes is preferably about 2 mm. The distance between the electrode 11 and the end of the wire 6 is also approximately 2 mm. The spark unit can be pivoted about a shaft 19 and can thus be rotated towards the capillary 5 and also away from the capillary.

Die Vorrichtung nach Fig. 1 enthält weiter einen Träger 14, auf dem ein Schlitten 15 angeordnet ist. Auf dem Schlitten 15 kann ein Leitergitter angebracht werden. Auf einem Trägerteil 16 des Leitergitters befindet sich ein Halbleiterbauelement 17, das mit Kontaktstellen zum Anbringen eines elektrisch leitenden Drahtes versehen ist. Der Draht wird von einer Kontaktstelle der Halbleiteranordnung 17 zu einem Leiter 18 des Leitergitters geführt. The device according to FIG. 1 further includes a carrier 14 on which a carriage 15 is arranged. A conductor grid can be attached to the slide 15. A semiconductor component 17 is located on a carrier part 16 of the conductor grid and is provided with contact points for attaching an electrically conductive wire. The wire is led from a contact point of the semiconductor arrangement 17 to a conductor 18 of the conductor grid.

Die Bildung einer Kugel an dem Draht 6 aus Aluminium oder einer Aluminiumlegierung wird anhand der Fig. 2 bis 5 näher erläutert. Das Ende des Drahtes 6 wird in den Schlitz 7 der Funkeneinheit 8 eingeführt. In den Schlitz wird ein Schutzgas, wie Argon, über die Bohrung 9 eingeführt; vorzugsweise findet die Gaszufuhr nur kurzzeitig statt, und zwar nur während der Bildung der Kugel. Zwischen den Hilfselektroden 12 und 13 wird nun ein Spannungsunterschied, vorzugsweise von 10 000 bis 20 000 V, mit Hilfe einer Spule erzeugt, wodurch eine Funkenentladung stattfindet. Diese Funkenentladung erzeugt ein Plasma im schützenden Argongas. In diesem Gas nimmt dadurch der elektrische Widerstand auf einen sehr niedrigen Wert ab. Zwischen der Elektrode 11 und dem Ende des Drahtes 6 wird ein Spannungsunterschied von 200 V oder weniger, vorzugsweise von etwa 70 V, aufrechterhalten. The formation of a ball on the wire 6 made of aluminum or an aluminum alloy is explained in more detail with reference to FIGS. 2 to 5. The end of the wire 6 is inserted into the slot 7 of the spark unit 8. A protective gas, such as argon, is introduced into the slot via the bore 9; the gas supply preferably takes place only for a short time, and only during the formation of the ball. A voltage difference, preferably from 10,000 to 20,000 V, is now generated between the auxiliary electrodes 12 and 13 with the aid of a coil, as a result of which a spark discharge takes place. This spark discharge creates a plasma in the protective argon gas. As a result, the electrical resistance in this gas decreases to a very low value. A voltage difference of 200 V or less, preferably about 70 V, is maintained between the electrode 11 and the end of the wire 6.

Infolge des niedrigen Wertes des elektrischen Widerstandes im Plasma kann eine Funkenentladung zwischen der Elektrode 11 und dem Ende des Drahtes 6 trotz der Tatsache stattfinden, dass der Abstand zwischen Elektrode und Drahtende verhältnismässig gross, z.B. 2 mm, sein kann. Durch die Funkenentla-5 dung wird am Ende des Drahtes eine Kugel gebildet, deren Grösse sehr genau reproduzierbar ist. Due to the low value of the electrical resistance in the plasma, a spark discharge can take place between the electrode 11 and the end of the wire 6 despite the fact that the distance between the electrode and the wire end is relatively large, e.g. 2 mm. Due to the spark discharge, a ball is formed at the end of the wire, the size of which can be reproduced very precisely.

Fig. 5 zeigt schematisch eine Schaltung zum Erzeugen eines Funkens zur Bildung einer Kugel an dem Aluminiumdraht. Ein von einem nichtdargestellten monostabilen Multivibrator her-lo rührender Impuls 20 bringt die Basis eines Transistors 21 auf eine genügend hohe Spannung, um zu bewirken, dass Strom durch den Transistor fliesst. Infolge dieses Stromes wird die Basis eines Transistors 22 auf eine derartige Spannung gebracht, dass auch durch den Transistor 22 Strom fliesst. Der 15 Strom durch den Transistor 22 ist genügend gross, um einen Hochspannungstransistor 23 zu steuern; dabei fliesst Strom durch den Primärzweig 24 einer Spule 26. Am Ende des kurzen Impulses 20 sperren nacheinander die Transistoren 21, 22 und 23 und nimmt der Strom im Primärzweig 24 der Spule plötzlich 20 auf einen Wert Null ab. Durch Induktionswirkung wird nun im • Sekundärzweig 25 der Spule eine hohe Spannung, z.B. 20 000 V, erzeugt. Dadurch wird die elektrische Funkenentladung zwischen den Elektroden 12 und 13 erhalten und wird ein Plasma im schützenden Argongas erzeugt. Fig. 5 schematically shows a circuit for generating a spark to form a ball on the aluminum wire. A pulse 20 originating from a monostable multivibrator (not shown) brings the base of a transistor 21 to a sufficiently high voltage to cause current to flow through the transistor. As a result of this current, the base of a transistor 22 is brought to such a voltage that current also flows through the transistor 22. The current through transistor 22 is large enough to control a high voltage transistor 23; current flows through the primary branch 24 of a coil 26. At the end of the short pulse 20, the transistors 21, 22 and 23 block in succession and the current in the primary branch 24 of the coil 20 suddenly decreases to a value of zero. Due to the induction effect, a high voltage, e.g. 20,000 V generated. This maintains the electrical spark discharge between electrodes 12 and 13 and generates a plasma in the protective argon gas.

25 Zwischen dem Draht 6 und der Elektrode 11 ist ein elektrischer Kondensator 27 eingeschaltet; der Kondensator steht mit einer Spannungsquelle in Verbindung und ist demzufolge aufgeladen. Infolge des niedrigen Widerstandes im Plasma wird sich der Kondensator 27 unter der Bildung eines Funkens zwischen 30 der Elektrode 11 und dem Ende des Drahtes 6 entladen. Dabei wird an dem Draht die Kugel gebildet. 25 An electrical capacitor 27 is connected between the wire 6 and the electrode 11; the capacitor is connected to a voltage source and is therefore charged. As a result of the low resistance in the plasma, the capacitor 27 will discharge to form a spark between the electrode 11 and the end of the wire 6. The ball is formed on the wire.

Die Spannung über dem Kondensator 27 und die Kapazität dieses Kondensators können in Abhängigkeit von dem Durchmesser des Drahtes, an dem die Kugel gebildet wird, gewählt 35 werden. Es hat sich z.B. als sehr günstig erwiesen, bei einem Draht mit einem Durchmesser von 200 um einen Kondensator von 500 |iF bei einer Spannung von 70 V zu verwenden. Bei einem Draht mit einem Durchmesser von 40 |im wurde eine günstige Kugelform durch Entladung eines Kondensators von 15 40 |xF, der bei einer Spannung von 70 V aufgeladen war, erhalten. The voltage across the capacitor 27 and the capacitance of this capacitor can be chosen 35 depending on the diameter of the wire on which the ball is formed. It has e.g. proved to be very favorable to use a capacitor of 500 | IF at a voltage of 70 V for a wire with a diameter of 200 μm. In the case of a wire with a diameter of 40 μm, a favorable spherical shape was obtained by discharging a capacitor of 15 40 μm, which was charged at a voltage of 70 V.

In den Fig. 6 bis 8 wird das Verfahren zum Verbinden des Drahtes mit der elektronischen Mikroschaltung einerseits und einem Stromleiter andererseits dargestellt. 6 to 8 illustrate the method for connecting the wire to the electronic microcircuit on the one hand and a current conductor on the other.

Auf dem auch in Fig. 1 gezeigten Schlitten 15 ist einLeiter-45 gitter mit einem Trägerteil 16 angeordnet, auf dem ein Halbleiterbauelement 17 befestigt ist. Ein Stromleiter ist mit der Bezugsziffer 18 bezeichnet. Die Kapillare 5 mit darin dem Draht 6, an dem eine Kugel gebildet ist, befindet sich über einer Kontaktstelle auf dem Halbleiterbauelement 17. A conductor 45 grid with a carrier part 16 is arranged on the carriage 15 also shown in FIG. 1, on which a semiconductor component 17 is fastened. A current conductor is designated by the reference number 18. The capillary 5 with the wire 6 therein, on which a ball is formed, is located above a contact point on the semiconductor component 17.

50 Die Kapillare wird z.B. dadurch, dass der Ultraschallgenerator 1 um die Welle 2 gedreht wird (Fig. 1), zu dem Halbleiterbauelement hin bewegt. Wenn die Kugel gegen die Kontaktstelle auf dem Halbleiterbauelement drückt, wird mit Hilfe von Ultraschallschwingungen eine Verbindung hergestellt (Fig. 7), wo-55 bei die Kugel zu einem platten Kopf geformt wird. Dann wird die Kapillare aufwärts bewegt und zu dem Stromleiter 18 verschoben. Dort wird der Draht zwischen dem Leiter 18 und der Unterseite der Kapillare festgeklemmt und mit Hilfe von Ultraschallenergie am Leiter 18 befestigt. Fig. 8 zeigt die endgültige 60 Drahtverbindung. Die Drahtverbindung mit dem Stromleiter 18 braucht nicht bedingt mit der Kapillare angebracht zu werden, doch kann sie in jeder gewünschten Weise geschehen. 50 The capillary is e.g. in that the ultrasonic generator 1 is rotated about the shaft 2 (FIG. 1), toward the semiconductor component. When the ball presses against the contact point on the semiconductor component, a connection is made with the aid of ultrasonic vibrations (FIG. 7), where the ball is formed into a flat head. Then the capillary is moved up and moved to the current conductor 18. There, the wire is clamped between the conductor 18 and the underside of the capillary and fastened to the conductor 18 with the aid of ultrasound energy. Figure 8 shows the final 60 wire connection. The wire connection with the current conductor 18 need not necessarily be attached to the capillary, but it can be done in any desired manner.

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1 Blatt Zeichnungen 1 sheet of drawings

Claims (5)

654.142 654.142 2 2nd PATENTANSPRÜCHE PATENT CLAIMS 1. Verfahren zur Herstellung einer Drahtverbindung zwischen einer Kontaktstelle auf einer elektronischen Mikroschaltung und einem Anschlussleiter, mit einem Draht aus Aluminium oder einer Aluminiumlegierung, der durch eine Kapillare geführt ist, wobei am Ende des Drahtes mit Hilfe einer Funkenentladung zwischen dem Draht und einer Elektrode eine Kugel gebildet wird, wobei diese Funkenentladung in einer schützenden Gasatmosphäre stattfindet, wonach der Draht mit Hilfe der Kapillare mit einer Kontaktstelle auf der elektronischen Mikro-schaltung verbunden wird, wonach eine Anschliessung mit dem Anschlussleiter folgt, dadurch gekennzeichnet, dass eine elektrische Funkenentladung zwischen zwei Hilfselektroden erzeugt wird, wobei durch Ionisierung des Schutzgases ein Plasma erzeugt wird, während durch den niedrigen Widerstand im Plasma eine elektrische Funkenentladung zwischen der Elektrode und dem Draht bei einer Spannung zwischen 25 V und 200 V erzeugt wird, wobei durch diese Funkenentladung am Ende des Drahtes eine Kugel gebildet wird. 1. A method for producing a wire connection between a contact point on an electronic microcircuit and a connecting conductor, with a wire made of aluminum or an aluminum alloy, which is guided through a capillary, at the end of the wire with the aid of a spark discharge between the wire and an electrode Sphere is formed, this spark discharge takes place in a protective gas atmosphere, after which the wire is connected to a contact point on the electronic microcircuit with the aid of the capillary, followed by a connection to the connecting conductor, characterized in that an electrical spark discharge between two auxiliary electrodes is generated, whereby a plasma is generated by ionization of the protective gas, while the low resistance in the plasma generates an electrical spark discharge between the electrode and the wire at a voltage between 25 V and 200 V, with this spark discharge ng a ball is formed at the end of the wire. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass das Plasma durch eine Funkenentladung mit Hilfe einer Spule erzeugt wird, wobei die Spannung zwischen den Hilfselektroden in der Grössenordnung von 10 000 - 20 000 V liegt. 2. The method according to claim 1, characterized in that the plasma is generated by a spark discharge with the aid of a coil, the voltage between the auxiliary electrodes being of the order of 10,000-20,000 V. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Funkenentladung zwischen der Elektrode und dem Draht durch Entladung eines elektrischen Kondensators bei einer Spannung von 50 - 100 V erhalten wird. 3. The method according to claim 1 or 2, characterized in that the spark discharge between the electrode and the wire is obtained by discharging an electrical capacitor at a voltage of 50-100 V. 4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Abstand zwischen der Elektrode und dem Ende des Drahtes und der Abstand zwischen den Hilfselektroden während der Bildung der Kugel auf einem Wert in der Grössenordnung von 2 mm gehalten werden. 4. The method according to any one of the preceding claims, characterized in that the distance between the electrode and the end of the wire and the distance between the auxiliary electrodes are kept at a value on the order of 2 mm during the formation of the ball. 5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Zufuhr von Schutzgas nur während der Bildung der Kugel stattfindet. 5. The method according to any one of the preceding claims, characterized in that the supply of protective gas takes place only during the formation of the ball.
CH6815/81A 1980-10-29 1981-10-26 METHOD FOR PRODUCING A WIRE CONNECTION. CH654142A5 (en)

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476365A (en) * 1982-10-08 1984-10-09 Fairchild Camera & Instrument Corp. Cover gas control of bonding ball formation
US4549059A (en) * 1982-11-24 1985-10-22 Nec Corporation Wire bonder with controlled atmosphere
US4476366A (en) * 1983-02-01 1984-10-09 Fairchild Camera & Instrument Corp. Controlled bonding wire ball formation
US4594493A (en) * 1983-07-25 1986-06-10 Fairchild Camera & Instrument Corp. Method and apparatus for forming ball bonds
FR2555813B1 (en) * 1983-09-28 1986-06-20 Hitachi Ltd SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5628922A (en) * 1995-07-14 1997-05-13 Motorola, Inc. Electrical flame-off wand
DE29608277U1 (en) * 1996-04-30 1996-09-19 F&K Delvotec Bondtechnik GmbH, 85521 Ottobrunn Ball bonding device
JP2003163235A (en) * 2001-11-29 2003-06-06 Shinkawa Ltd Apparatus for wire bonding
TWI229022B (en) * 2002-06-20 2005-03-11 Esec Trading Sa Device with electrodes for the formation of a ball at the end of a wire
KR101771142B1 (en) * 2012-10-05 2017-08-24 가부시키가이샤 신가와 Antioxidant gas blow-off unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH568656A5 (en) * 1974-03-20 1975-10-31 Transistor Ag Welding of contact blobs to semiconductor lead wires - uses electric DC light arc of preset current strength for melting lead wire end
NL7406783A (en) * 1974-05-21 1975-11-25 Philips Nv PROCEDURE FOR MOUNTING A WIRE CONNECTION TO A SEMICONDUCTOR DEVICE.
GB1536872A (en) * 1975-05-15 1978-12-20 Welding Inst Electrical inter-connection method and apparatus
GB1468974A (en) * 1975-05-23 1977-03-30 Ferranti Ltd Manufacture of semiconductor devices
GB1600021A (en) * 1977-07-26 1981-10-14 Welding Inst Electrical inter-connection method and apparatus

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PL133893B1 (en) 1985-07-31
BE890887A (en) 1982-04-27
KR890000585B1 (en) 1989-03-21
BR8106902A (en) 1982-07-13
GB2086297A (en) 1982-05-12
IT1139570B (en) 1986-09-24
ES506580A0 (en) 1982-11-16
SG21984G (en) 1985-01-04
JPS5916409B2 (en) 1984-04-16
JPS57102036A (en) 1982-06-24
DD205294A5 (en) 1983-12-21
AU546818B2 (en) 1985-09-19
HK40885A (en) 1985-05-31
AU7689381A (en) 1982-05-06
DE3141842A1 (en) 1982-10-21
MY8500623A (en) 1985-12-31
FR2493044A1 (en) 1982-04-30
NL8005922A (en) 1982-05-17
DE3141842C2 (en) 1990-09-20
GB2086297B (en) 1983-12-21
KR830008394A (en) 1983-11-18
CA1178664A (en) 1984-11-27
ES8301390A1 (en) 1982-11-16
FR2493044B1 (en) 1986-03-28
IT8124731A0 (en) 1981-10-27
PL233586A1 (en) 1982-05-10

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