DE102022126374A1 - METHOD FOR PRODUCING A COMPONENT AND COMPONENT - Google Patents

Abstract

The invention relates to a method for producing a component, in which the following steps are carried out. First, a carrier is provided, wherein the carrier has an electrically non-conductive carrier material. An adhesive layer is then applied to the carrier. A semiconductor chip is then applied to the adhesive layer. An electrically conductive connection is then produced between at least one contact region of the semiconductor chip and the carrier by means of a metal coating such that the electrically conductive connection at least partially adjoins the carrier.

Description

The present invention relates to a method for producing a component and to a component.

In the prior art, components are known in which a semiconductor chip, for example an optoelectronic semiconductor chip, is arranged on a carrier and is conductively connected to electrical line areas of the carrier. This can be done, for example, by means of a solder, a conductive adhesive, a conductive glue, sintering pastes and other conductive connections.

An object of the present invention is to provide an improved method for producing the component, in which an electrical connection of the semiconductor chip can be easily created. A further object of the present invention is to provide such a component. These objects are achieved by a method for producing a component and by a component having the features of the independent claims. Advantageous further developments are specified in the dependent claims.

A first aspect of the invention relates to a method for producing a component, in which the following steps are carried out. First, a carrier is provided, wherein the carrier has an electrically non-conductive carrier material. Furthermore, the carrier can optionally have conductive regions, for example in the form of metal coatings. In particular, the carrier can be a printed circuit board (PCB). Subsequently, an adhesive layer is applied to the carrier. Then a semiconductor chip is applied to the adhesive layer. After that, an electrically conductive connection is produced between at least one contact region of the semiconductor chip and the carrier by means of a metal coating such that the electrically conductive connection at least partially adjoins the carrier.

The metal coating therefore has direct contact with the carrier in at least one area. The carrier and the metal coating therefore touch each other in at least one area without any further elements or layers being arranged in between. If the carrier has the optional conductive areas, it can be provided that an electrically conductive connection is made between the conductive area and the contact area using the metal coating. If the carrier does not have any conductive areas, it can be provided that conductive areas of the carrier, which can be used for further contacting of the semiconductor chip, are made using the metal coating. This method is easy to carry out, so that an uncomplicated method for producing a component is made possible.

The semiconductor chip can in particular contain an integrated circuit and be arranged in a chip housing. Alternatively, it can be provided that the semiconductor chip is applied without a housing. The adhesive can have an adhesive or consist of an adhesive. The adhesive can be based on a polymer, based on a metal paste, have a B-stage material or consist of a B-stage material, have a sticky thermoplastic and/or a sticky duroplastic or consist of a sticky thermoplastic or a sticky duroplastic. The adhesive can in particular be designed to be electrically insulating.

In one embodiment of the method, after the semiconductor chip has been applied, a position of the semiconductor chip is determined and the metal coating is adapted to the position. This allows a tolerance of the position to be taken into account and improved contacting of the semiconductor chip to be achieved.

In one embodiment of the method, a surface of the carrier and/or a surface of the semiconductor chip is activated before the electrically conductive connection is made. This can mean, for example, that the surface of the carrier and/or the surface of the semiconductor chip is at least 20% rougher in activated areas than in areas that have not been activated. This can have the advantage that a static electrical charge is created on the rougher surfaces, which makes it easier to apply the metal coating.

In one embodiment of the method, the surface of the carrier and/or the semiconductor chip is activated by means of laser radiation. This allows for simple activation. Furthermore, if the position of the semiconductor chip has also been determined, the shape or arrangement of the activated area can be changed by adjusting the point of impact of the laser radiation, thus taking the position of the semiconductor chip into account. It can be provided that a laser for generating the laser radiation has a power of approximately one watt. The laser can be operated, for example, in pulsed mode with a pulse length of 10 to 20, in particular 10 to 15, and for example with a pulse length of 12 picoseconds. A wavelength of the laser can be in the range of 1000 to 1100 nanometers and can be, for example, 1064 nanometers. The laser can in particular be an infrared laser. Laser. It is also possible to use a laser with an emission wavelength in the visible range, and in particular with blue or green light, or a UV laser. With the higher energy compared to infrared radiation, a lower penetration depth or higher absorption can be advantageous. With the laser radiation, in particular, a roughening of the surface of the carrier and/or the surface of the semiconductor chip by at least 20% can be achieved.

In one embodiment of the method, the surface of the carrier and/or the surface of the semiconductor chip is chemically activated. The chemical activation can be carried out, for example, by applying substances and/or elements, whereby the applied substances and/or elements can result in an improved application of the metal coating. It can be provided that both the chemical activation and the activation already described are carried out by means of a laser.

In one embodiment of the method, the surface of the carrier and/or the surface of the semiconductor chip is chemically activated using palladium. Palladium is an element that is well suited for chemical activation.

In one embodiment of the method, the semiconductor chip has a contact region that faces away from the carrier. The surface of the carrier and/or the surface of the semiconductor chip is activated after the semiconductor chip has been applied. This allows the contact region to be contacted on an upper side of the semiconductor chip. If appropriate, the semiconductor chip has two contact regions on the upper side, and both contact regions can then be contacted using the method described.

In one embodiment of the method, the semiconductor chip has a contact region that faces the carrier. The surface of the carrier is activated before the semiconductor chip is applied. In particular, only the surface of the carrier is activated if necessary, wherein the semiconductor chip can have, for example, two contact regions that are optionally arranged on an underside of the semiconductor chip and that are both connected to the carrier by means of the method.

It can be provided that the semiconductor chip has both a contact area that faces away from the carrier and a contact area that faces the carrier. In this case, the surface of the carrier can be activated first, then the semiconductor chip can be applied and then the surface of the semiconductor chip can be activated, whereby an additional surface of the carrier can also be activated here if necessary. By applying the metal coating, both contact areas are then connected to the carrier.

In one embodiment of the method, the carrier has electrically conductive regions. The electrically conductive connection is established between the contact region of the semiconductor chip and the electrically conductive region.

In one embodiment of the method, the electrically conductive connection is produced by metallization from an aqueous solution. Metal atoms, which later form the metallization, are dissolved in a solution, for example in the form of a salt. In particular, if the surface of the carrier or the semiconductor chip has been activated, this results in a good attachment of the metal atoms without, for example, having to apply a voltage from the outside.

In one embodiment of the method, the metallization is carried out in the form of a galvanic deposition. In particular, the metallization can be carried out in the form of an electroless galvanic deposition. This can, for example, achieve a further improvement in the deposition.

In one embodiment of the method, a conductive layer is produced on the carrier during application of the metal coating. This makes it possible to initially design the carrier without conductive layers and to accomplish the contacting of the semiconductor chip and the production of the conductive layers in one work step.

In one embodiment of the method, the electrically conductive connection is applied as a metal layer. The metal layer can in particular contain copper or consist entirely of copper. The metal layer can also contain nickel, gold, palladium, silver or tin or consist of these metals.

In one embodiment of the method, after the electrically conductive connection between the contact region of the semiconductor chip and the carrier has been established, an electrical test voltage is applied to the semiconductor chip. In the event that a defect in the semiconductor chip and/or the electrically conductive connection is detected, the electrically conductive connection is interrupted, a further adhesive layer is applied to the carrier, a further semiconductor chip is placed on the Another adhesive layer is applied and another electrically conductive connection is made between at least one other contact area of the other semiconductor chip and the carrier by means of another metal coating. In this way, defective semiconductor chips can be replaced.

In one embodiment of the method, the electrically conductive connection is interrupted by means of a laser. This enables the method to be implemented easily.

In one embodiment of the method, the semiconductor chip is an optoelectronic semiconductor chip, in particular a mini-LED or a micro-LED. The component can then be referred to as an optoelectronic component. The optoelectronic semiconductor chip can also be arranged in a housing or applied without a housing.

In one embodiment of the method, the optoelectronic semiconductor chip, i.e. possibly the mini-LED or the micro-LED, has a conversion element. Before the electrically conductive connection is established, a surface of the conversion element is activated. This activation can be designed as described above for the carrier or the semiconductor chip and can use the same methods.

In one embodiment of the method, a conductive area of the carrier is covered with an insulating layer. When the electrically conductive connection is made, a conductive bridge is also created over the insulating layer. If necessary, the insulating layer can also be activated here using the methods described above.

According to a second aspect, the invention comprises a component with a carrier, a semiconductor chip and an electrically conductive connection. An adhesive layer is arranged between the carrier and the semiconductor chip. The electrically conductive connection is established between the carrier and at least one contact region of the semiconductor chip. The electrically conductive connection has a metal coating and is at least partially adjacent to the carrier.

The semiconductor chip can in particular contain an integrated circuit and be arranged in a chip housing. Alternatively, it can be provided that the semiconductor chip is designed without a housing. The semiconductor chip can also be an optoelectronic semiconductor chip, in particular a mini-LED or a micro-LED. The component can then be referred to as an optoelectronic component. The optoelectronic semiconductor chip can also be arranged in a housing or be designed without a housing.

In one embodiment of the component, the carrier has a first region adjacent to the metal coating and a second region outside the metal coating. A carrier surface of the carrier is rougher in the first region than in the second region. The rough carrier surface can be produced in particular by means of the activations described above. A roughness can be increased by at least 20 percent, for example.

In one embodiment of the component, no conductive region is arranged between the semiconductor chip and the carrier.

In one embodiment of the device, the carrier surface under the semiconductor chip is at least partially rougher than in areas that are not covered by the semiconductor chip.

• 1 Querschnitte durch verschiedene Zwischenschritte während eines Verfahrens zur Herstellung eines Bauelements;
• 2 Draufsichten auf die Zwischenschritte der 1;
• 3 Querschnitte durch verschiedene Zwischenschritte während eines weiteren Verfahrens zur Herstellung eines Bauelements;
• 4 Draufsichten auf die Zwischenschritte der 3;
• 5 Querschnitte durch verschiedene Zwischenschritte während eines weiteren Verfahrens zur Herstellung eines Bauelements;
• 6 Draufsichten auf die Zwischenschritte der 5;
• 7 Querschnitte durch verschiedene Zwischenschritte während eines weiteren Verfahrens zur Herstellung eines Bauelements;
• 8 Draufsichten auf die Zwischenschritte der 7;
• 9 Querschnitte durch verschiedene Zwischenschritte während eines weiteren Verfahrens zur Herstellung eines Bauelements;
• 10 Draufsichten auf verschiedene Zwischenschritte während eines weiteren Verfahrens zur Herstellung eines Bauelements;
• 11 Querschnitte durch verschiedene Zwischenschritte während eines weiteren Verfahrens zur Herstellung eines Bauelements;
• 12 eine Seitenansicht eines Bauelements; und
• 13 Draufsichten auf verschiedene Zwischenschritte während eines weiteren Verfahrens zur Herstellung eines Bauelements.

The above-described properties, features and advantages of this invention and the manner in which they are achieved will become clearer and more clearly understandable in connection with the following description of the embodiments, which are explained in more detail in connection with the drawings. In each case, in a schematic representation,

• 1 Cross-sections through various intermediate steps during a process for manufacturing a component;
• 2 Top views of the intermediate steps of the 1 ;
• 3 Cross sections through various intermediate steps during a further process for producing a component;
• 4 Top views of the intermediate steps of the 3 ;
• 5 Cross sections through various intermediate steps during a further process for producing a component;
• 6 Top views of the intermediate steps of the 5 ;
• 7 Cross sections through various intermediate steps during a further process for producing a component;
• 8th Top views of the intermediate steps of the 7 ;
• 9 Cross sections through various intermediate steps during a further process for producing a component;
• 10 Top views of various intermediate steps during a further process for producing a component;
• 11 Cross sections through various intermediate steps during a further process for producing a component;
• 12 a side view of a component; and
• 13 Top views of various intermediate steps during a further process for manufacturing a component.

1 shows cross sections through various intermediate steps during a method for producing a component 100. First (top cross section) a carrier 110 is provided which has an electrically non-conductive carrier material 111. The carrier material 111 is therefore designed to be electrically insulating. The carrier 110 also has optional conductive regions 112. The conductive regions 112 can be designed as conductor tracks, for example. In the next step, shown by the next cross section, an adhesive layer 120 is applied to the carrier 110. The adhesive layer 120 is arranged between the conductive regions 112, but can also be provided at another location on the carrier 110. In the next step, shown by the next cross section, a semiconductor chip 130 is applied to the adhesive layer 120. The semiconductor chip 130 has two contact regions 131 with which the semiconductor chip 130 can be electrically contacted. If necessary, more than two contact regions 131 can be provided. The contact regions 131 face the conducting regions 112. The semiconductor chip 130 at least partially covers the conducting regions 112. In the next step, shown by the next cross section, an electrically conductive connection 150 is produced between the contact regions 131 of the semiconductor chip 130 and the carrier 110 by means of a metal coating 151. The electrically conductive connection 150 is produced in such a way that the electrically conductive connection 150 at least partially borders the carrier 110, here by bordering the conducting regions 112 of the carrier 110. Because the semiconductor chip 130 at least partially covers the conducting regions 112, the metal coating 151 only has to fill a small gap between the contact regions 131 and the conducting regions 112. This ultimately results in a component 100 with a carrier 110, a semiconductor chip 130 and an electrically conductive connection 150, in which an adhesive layer 120 is arranged between the carrier 110 and the semiconductor chip 130 and the electrically conductive connection 150 between the carrier 110 and at least one contact region 131 of the semiconductor chip 130 is produced by means of a metal coating 151 and in which the electrically conductive connection 150 at least partially adjoins the carrier 110.

It can be provided that only one contact region 131 of the semiconductor chip 130 is connected to the carrier 110 by means of the electrically conductive connection 150. However, it can also be provided that all contact regions 131 of the semiconductor chip 130 are connected to the carrier 110 by means of the electrically conductive connection 150. The semiconductor chip 130 can, for example, comprise an integrated circuit. In this case in particular, more than two contact regions 131 can be provided. Alternatively, the semiconductor chip 130 can also be an optoelectronic semiconductor chip 130. The metal coating 151 can in particular comprise the metals copper, nickel, gold, silver, palladium or tin or consist entirely of one of these metals. The carrier material 111 can in particular comprise a glass, ceramic, metal, a thermoplastic or a thermosetting plastic, as well as a composite material consisting of several of the materials mentioned. The adhesive layer 120 can be applied, for example, in the form of adhesive dots or in the form of adhesive rows.

The adhesive of the adhesive layer 120 can be based on a polymer, based on a metal paste, comprise a B-stage material or consist of a B-stage material, comprise a sticky thermoplastic and/or a sticky duroplastic or consist of a sticky thermoplastic or a sticky duroplastic. The adhesive can in particular be designed to be electrically insulating.

2 shows the intermediate steps of the 1 each in a top view. The adhesive layer 120 is designed as an adhesive point 121.

In one embodiment, the electrically conductive connection 150 is produced by metallization from an aqueous solution. This represents a simple way of producing the electrically conductive connection 150. In particular, in this embodiment, it is not necessary to produce a sintered connection and/or a soldered connection. The metal coating 151 can be applied directly. This means that the use of silver as a sintered material and/or solder material can be dispensed with. This reduces or completely eliminates silver corrosion or migration of silver atoms.

In one embodiment, the metallization is carried out in the form of a galvanic deposition. In particular, the metallization can be The coating can be carried out using electroless galvanic deposition. This also enables a simple manufacturing process.

3 shows cross sections through various intermediate steps during a further method for producing a component 100, wherein the method is analogous to that described in connection with the 1 and 2 described method, unless differences are described below. In this embodiment, after the adhesive layer 120 has been applied, an activated region 140 is created, the activated region 140 being created by means of laser radiation 141. The activated region 140 is created on a surface 113 of the carrier 110. The activated region 140 can, for example, have increased roughness and, for example, be at least 20 percent rougher than non-activated regions of the carrier 110. The activated region 140 makes it easier to coat with the metal coating 151. The laser radiation 141 can be infrared laser radiation. It can be provided that a laser for generating the laser radiation 141 has an output of approximately one watt. The laser can, for example, be operated in pulsed mode with a pulse length of 10 to 20, in particular 10 to 15, and for example with a pulse length of 12 picoseconds. A laser wavelength can be in the range of 1000 to 1100 nanometers and can be, for example, 1064 nanometers.

Instead of the laser radiation 141, another method can also be used to produce the activated region 141. For example, chemical activation is possible. This can be done, for example, by means of a selective application of palladium. Furthermore, it can be provided to produce the activated region 140 both by the laser radiation 141 and by chemical activation. The production of the activated region 140 can be referred to as activating the corresponding surface 113.

In 3 It is shown that the activated region 140 is created after the adhesive layer 120 has been applied. However, it is also conceivable to first create the activated region 140 and only then apply the adhesive layer 120.

4 shows top views of the various process steps of the 3 explained method. In particular, it is visible that the activated regions 140 extend between the conductive regions 112 and the adhesive layer 120. The activated regions 140 also enclose the conductive regions 112, whereby this configuration is optional and, if necessary, only a lateral contact between the activated regions 140 and the conductive regions 112 can be provided.

Furthermore, 4 shown that the adhesive layer 120 is arranged perpendicular to the semiconductor chip 130 and forms a line. This can, for example, achieve improved electrical insulation, since the metal coating 151 may only adhere to the carrier 110 outside the adhesive layer 120. The 4 The configuration shown can also be provided in the other embodiments. Furthermore, alternatively, in the 3 and 4 an adhesive point as in connection with 1 and 2 explained.

5 shows cross sections through various intermediate steps during a further method for producing a component 100, wherein the method is analogous to that described in connection with the 3 and 4 described method, unless differences are described below. The carrier 110 has, in contrast to the carrier 110 of the 3 and 4 no guiding areas 112. The guiding areas 112 are only created by applying the metal coating 151. This makes the process very flexible, since the guidance of the guiding areas 112 can be influenced by irradiation with the laser radiation 141. This enables a further simplification of the manufacturing process.

6 shows top views of the intermediate steps of the process of 5 Here it can be seen that the activated areas 140 have a projection 142, so that the activated areas 140, in contrast to the 4 protrude laterally beyond the semiconductor chip 130. This makes it possible to provide an improved electrically conductive connection 150. Such projections are also in the area of the conductive areas 112 of the 3 and 4 possible.

In addition to the 5 and 6 Other structures or other shapes may also be provided in addition to the metal coatings 151 shown. For example, the metal coating may be designed such that the metal coatings 151 form a grid on the carrier 110 or that the metal coatings 151 form conductor tracks on the carrier 110.

In all versions of the 3 to 6 the semiconductor chip 130 has at least one contact region 131 that faces the carrier 110. In particular, the semiconductor chip 130 has at least two such contact regions 131. The surface 113 of the carrier 110 is activated before the semiconductor chip 130 is applied.

In the design of the 3 to 6 Furthermore, the laser radiation 141 for forming the activated regions 140 can be aligned with the shape and position of the adhesive layer 120. This makes it possible, for example, to compensate for position errors of the adhesive layer 120.

7 shows cross sections through various intermediate steps during a further method for producing a component 100, wherein the method is analogous to that described in connection with the 3 and 4 described method, unless differences are described below. The adhesive layer 120 is applied as a flat layer. In this method, after the adhesive layer 120 has been applied, the semiconductor chip 130 is first applied, in this case the contact regions 131 of the semiconductor chip 130 facing away from the carrier 110. Furthermore, the adhesive layer 120 is partially removed so that the adhesive layer 120 is arranged exclusively beneath the semiconductor chip 130. Furthermore, in addition to a surface 113 of the carrier, a surface 132 of the semiconductor chip 130 is also activated so that the activated region 140 extends from the carrier 110 to the semiconductor chip 130. The activated regions 140 can be produced using the methods already described. Here, too, the electrically conductive connection 150 is subsequently produced in the form of a metal coating 151.

8th shows top views of the intermediate steps of the 7 Here too, it is clear that the activated regions 140 are formed both on the surface 113 of the carrier 110 and on the surface 132 of the semiconductor chip 130. The activated regions 140 do not have a projection 142, but such a projection can also be provided. In the embodiment of the 7 and 8th Furthermore, a guide area 112 is arranged on the carrier 110. However, this can be analogous to 5 and 6 can also be produced again as metal coating 151.

In one embodiment, after the semiconductor chip 130 has been applied, a position of the semiconductor chip 130 is determined and the metal coating 151 is adapted to the position. This can be done in particular by adapting the activated region 140.

9 shows cross sections through various intermediate steps during a further method for producing a component 100, wherein the method is analogous to that described in connection with the 3 and 4 described method, unless differences are described below. The semiconductor chip 13o has a contact region 131 facing the carrier 110 and a contact region 131 facing away from the carrier 110. For this reason, an activated region 140 is formed analogously to 3 and 4 before the application of the semiconductor chip 130 and an activated region 140 after the application of the semiconductor chip 130, the latter activated region again being analogous to 7 extends to a surface 132 of the semiconductor chip 130. Here too, in connection with the above embodiments, optional designs are possible, such as projections 142 or the omission of the conductive regions 112 on the carrier 110 or the creation of the conductive regions 112 during the application of the metal coating 151.

10 shows plan views of various intermediate steps during a further method for producing a component 100. The component 100 is initially as in connection with 7 and 8th explained, whereby the methodology described below can also be applied analogously to the other embodiments of the method. After the electrically conductive connection 150 has been established between the contact region 131 of the semiconductor chip 130 and the carrier 110, an electrical test voltage is applied to the semiconductor chip 130, for example via the metal coating 151. In the event that a fault in the semiconductor chip 130 and/or the electrically conductive connection 150 is detected, the electrically conductive connection 150 is interrupted. This is in 10 as a cut 152. Then, a further adhesive layer 122 is applied to the carrier 110. A further semiconductor chip 133 is applied to the further adhesive layer 122. Then, a further electrically conductive connection 153 is produced between at least one further contact region 134 of the further semiconductor chip 133 and the carrier 110 by means of a further metal coating 154. In 10 This is done by forming a further activated region 143 on the surface 113 of the carrier 110 and a surface 132 of the further semiconductor chip 133 and then applying the metal coating 151. The further activated region 143 can be produced using the methods already described. It can be provided that the severing 152 takes place using laser radiation. Finally, a component 100 with a further semiconductor chip 133 is produced, which may not have any defects.

11 shows cross sections through various intermediate steps during another method for producing a component 100, which corresponds to the method of 7 and 8th unless differences are described below. The semiconductor chip 130 in this case is an optoelectronic semiconductor chip 130, for example a mini-LED or a micro-LED. The optoelectronic semiconductor chip 130 has a conversion element 135. The activated region 140 is also formed on a surface 136 of the conversion element 135. This is particularly useful if the optoelectronic semiconductor chip 130 has contact regions 131 that face away from the carrier 110 and/or the conversion element 135 is arranged between the optoelectronic semiconductor chip 130 and the carrier 110.

In the design of the 7 , 8th and 11 Furthermore, the laser radiation 141 can be aligned to form the activated regions 140 at a position of the semiconductor chip 130. This makes it possible, for example, to compensate for position errors of the semiconductor chip 130.

12 shows a side view of a component 100 corresponding to the 11 The metal coating 151 is also arranged laterally on the optoelectronic semiconductor chip 130. This can enable improved contacting. An analogous design can also be used for the component 100 of the 8th be provided if the conversion element 135 is omitted and a semiconductor chip 130 is generally used.

13 shows plan views of various intermediate steps during a further method for producing a component 100. The component 100 is initially as in connection with 1 to 4 explained, but can also be made with the products described in connection with the 5 to 11 Following these previously described processes, a conductive region 112 of the carrier 110 is covered with an insulating layer 123. When producing the electrically conductive connection 150, a conductive bridge 155 is additionally created over the insulating layer 123. In this case, 12 Optionally, an activated region 140 is guided over the insulation layer 123. The insulation layer 123 can be an adhesive layer. As a result, the steps used to produce the component 100 can also be used to produce cross-routed lines on the carrier 110.

The invention has been illustrated and described in more detail using the preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations can be derived by the person skilled in the art from the described embodiments without departing from the scope of the invention.

LIST OF REFERENCE SYMBOLS

100

Component

110

carrier

111

Carrier material

112

Control area

113

surface

120

Adhesive layer

121

Adhesive point

122

additional adhesive layer

123

Insulation layer

130

Semiconductor chip

131

Contact area

132

surface

133

another semiconductor chip

134

further contact area

135

Conversion element

136

surface

140

activated area

141

Laser radiation

142

Overhang

143

additional activated area

150

electrically conductive connection

151

Metal coating

152

Severing

153

further electrically conductive connection

154

further metal coating

155

Cable bridge

Claims (20)

Method for producing a component (100), comprising the following steps: - providing a carrier (110), the carrier (110) having an electrically non-conductive carrier material (111); - applying an adhesive layer (120) to the carrier (110); - applying a semiconductor chip (130) to the adhesive layer (120); - producing an electrically conductive connection (150) between at least one contact region (131) of the semiconductor chip (130) and the carrier (110) by means of a metal coating (151) such that the electrically conductive connection (150) at least partially adjoins the carrier (110). Procedure according to Claim 1 , wherein after the application of the semiconductor chip (130), a position of the semiconductor chip (130) is determined and the metal coating (151) is adapted to the position. Procedure according to Claim 1 or 2 , wherein a surface (113) of the carrier (110) and/or a surface (132) of the semiconductor chip (130) is activated before establishing the electrically conductive connection (151). Procedure according to Claim 3 , wherein the surface (113) of the carrier (110) and/or the surface (132) of the semiconductor chip (130) is activated by means of laser radiation (141). Method according to one of the Claims 3 or 4 , wherein the surface (113) of the carrier (110) and/or the surface (132) of the semiconductor chip (130) is chemically activated. Procedure according to Claim 5 , wherein the surface (113) of the carrier (110) and/or the surface (132) of the semiconductor chip (130) is chemically activated by means of palladium. Method according to one of the Claims 3 until 6 , wherein the semiconductor chip (130) has a contact region (131) which faces away from the carrier (110) and wherein the surface (113) of the carrier (110) and/or the surface (132) of the semiconductor chip (130) is activated after the application of the semiconductor chip (130). Method according to one of the Claims 3 until 7 , wherein the semiconductor chip (130) has a contact region (131) facing the carrier (110), wherein the surface (113) of the carrier (110) is activated before the application of the semiconductor chip (130). Method according to one of the Claims 1 until 8th , wherein the carrier (110) has electrically conductive regions (112), wherein the electrically conductive connection (150) is established between the contact region (131) of the semiconductor chip (130) and the electrically conductive region (112). Method according to one of the Claims 1 until 9 , wherein the electrically conductive connection (150) is produced by means of metallization from an aqueous solution. Procedure according to Claim 10 , whereby the metallization is carried out in the form of an electroless galvanic deposition. Method according to one of the Claims 1 until 11 wherein a conductive layer (112) is produced on the carrier (110) during application of the metal coating (151). Method according to one of the Claims 1 until 12 , wherein the electrically conductive connection (150) is applied as a metal layer. Method according to one of the Claims 1 until 13 , wherein after establishing the electrically conductive connection (150) between the contact region (131) of the semiconductor chip (130) and the carrier (110), an electrical test voltage is applied to the semiconductor chip (130) and, in the event that a fault in the semiconductor chip (130) and/or the electrically conductive connection (150) is detected, the electrically conductive connection (150) is interrupted, a further adhesive layer (122) is applied to the carrier (110), a further semiconductor chip (133) is applied to the further adhesive layer (122), and a further electrically conductive connection (153) is established between at least one further contact region (134) of the further semiconductor chip (133) and the carrier (110) by means of a further metal coating (154). Procedure according to Claim 14 , wherein the electrically conductive connection (150) is interrupted by means of a laser. Method according to one of the Claims 1 until 15 , wherein the semiconductor chip (130) is an optoelectronic semiconductor chip (130), in particular a mini-LED or a micro-LED. Procedure according to Claim 16 , wherein the optoelectronic semiconductor chip (130) has a conversion element (135), wherein a surface (136) of the conversion element (135) is activated before the electrically conductive connection (150) is established. Method according to one of the Claims 1 until 17 , wherein a conductive region (112) of the carrier (110) is covered with an insulating layer (123) and, when producing the electrically conductive connection (150), a conductive bridge (155) is additionally produced over the insulating layer (123). Component (100) with a carrier (110), a semiconductor chip (130) and an electrically conductive connection (150), wherein an adhesive layer (120) is arranged between the carrier (110) and the semiconductor chip (130), wherein the electrically conductive connection (150) is produced between the carrier (110) and at least one contact region (131) of the semiconductor chip (130) and wherein the electrically conductive connection (150) has a metal coating (151), wherein the electrically conductive connection (150) at least partially adjoins the carrier (110). Component (100) according to Claim 19 , wherein the carrier (110) has a first region adjacent to the metal coating (151) and a second region outside the metal coating (151), and a carrier surface (113) of the carrier (110) is rougher in the first region than in the second region.

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