WO2024079183A1

WO2024079183A1 - Method for producing a component, and component

Info

Publication number: WO2024079183A1
Application number: PCT/EP2023/078179
Authority: WO
Inventors: Thomas Schwarz; Bernd Barchmann; Sebastian Wittmann; I-Hsin LIN-LEFEBVRE
Original assignee: Ams-Osram Inernational Gmbh
Priority date: 2022-10-11
Filing date: 2023-10-11
Publication date: 2024-04-18
Also published as: DE102022126374A1

Abstract

The invention relates to a method for producing a component, wherein the following steps are carried out. Firstly, a carrier is provided, the carrier comprising an electrically nonconductive carrier material. Subsequently, an adhesive layer is applied to the carrier. A semiconductor chip is then applied on the adhesive layer, the semiconductor chip having a contact region facing the carrier. A surface of the carrier is activated before the semiconductor chip is applied. Afterward, an electrically conductive connection between the contact region of the semiconductor chip and the carrier is produced by means of a metal coating in such a way that the electrically conductive connection at least partly adjoins the carrier.

Description

METHOD FOR PRODUCING A COMPONENT AND COMPONENT

DESCRIPTION

The present invention relates to a method for producing a component and to a component.

This patent application claims priority from German patent application DE 10 2022 126 374 . 6 , the disclosure content of which is hereby incorporated by reference.

Components are known in the prior art in which a semiconductor chip, for example an optoelectronic semiconductor chip, is arranged on a carrier and is conductively connected to electrical line regions of the carrier. This can be done, for example, by means of a solder, a conductive adhesive, a conductive glue, sintering pastes and other conductive connections.

An object of the present invention is to provide an improved method for producing the component, in which an electrical connection of the semiconductor chip can be easily created. A further object of the present invention is to provide such a component. These objects are achieved by a method for producing a component and by a component having the features of the independent claims. Advantageous further developments are specified in the dependent claims.

A first aspect of the invention relates to a method for producing a component, in which the following steps are carried out. First, a carrier is provided, wherein the carrier has an electrically non-conductive carrier material. Furthermore, the carrier can optionally have conductive areas, for example in the form of metal coatings. In particular, the carrier can be a printed circuit board (PCB). Subsequently, an adhesive layer is applied to the carrier. applied. A semiconductor chip is then applied to the adhesive layer. The semiconductor chip has a contact region that faces the carrier. A surface of the carrier is activated before the semiconductor chip is applied. An electrically conductive connection is then produced between the contact region of the semiconductor chip and the carrier by means of a metal coating in such a way that the electrically conductive connection at least partially adjoins the carrier.

The metal coating therefore has direct contact with the carrier in at least one area. The carrier and the metal coating therefore touch each other in at least one area, without any further elements or layers being arranged in between. If the carrier has the optional conductive areas, it can be provided that an electrically conductive connection is made between the conductive area and the contact area using the metal coating. If the carrier has no conductive areas, it can be provided that conductive areas of the carrier, which can be used for further contacting of the semiconductor chip, are made using the metal coating. This method is easy to carry out, so that an uncomplicated method for producing a component is possible.

The semiconductor chip can in particular contain an integrated circuit and be arranged in a chip housing. Alternatively, it can be provided that the semiconductor chip is applied without a housing. The adhesive can have an adhesive or consist of an adhesive. The adhesive can be based on a polymer, based on a metal paste, have a B-stage material or consist of a B-stage material, have a sticky thermoplastic and/or a sticky duroplastic or consist of a sticky thermoplastic or a sticky duroplastic. The adhesive can in particular be designed to be electrically insulating. In one embodiment of the method, after the semiconductor chip has been applied, a position of the semiconductor chip is determined and the metal coating is adapted to the position. In this way, a tolerance of the position can be taken into account and improved contacting of the semiconductor chip can be achieved.

Before the electrically conductive connection is made, a surface of the carrier and optionally a surface of the semiconductor chip is activated. This can mean, for example, that the surface of the carrier and/or the surface of the semiconductor chip is at least 20% rougher in activated areas than in areas that have not been activated. This can have the advantage that a static electrical charge is created on the rougher surfaces, which makes it easier to apply the metal coating.

In one embodiment of the method, the surface of the carrier and/or the semiconductor chip is activated by means of laser radiation. This allows simple activation. Furthermore, if the position of the semiconductor chip has also been determined, the shape or arrangement of the activated region can be changed by adjusting the impact of the laser radiation, thus taking the position of the semiconductor chip into account. It can be provided that a laser for generating the laser radiation has an output of approximately one watt. The laser can, for example, be operated in pulsed mode with a pulse length of 10 to 20, in particular 10 to 15, and for example with a pulse length of 12 picoseconds. The wavelength of the laser can be in the range 1000 to 1100 nanometers and can be, for example, 1064 nanometers. The laser can in particular be an infrared laser. It is also possible to use a laser with an emission wavelength in the visible range, and in particular with blue or green light, or a UV laser. With the higher energy compared to infrared radiation, a lower penetration depth or a higher absorption can be advantageous. In particular, the laser radiation can be used to roughen the surface of the carrier and/or the surface of the semiconductor chip by at least 20%.

In one embodiment of the method, the surface of the carrier and/or the surface of the semiconductor chip is chemically activated. The chemical activation can be carried out, for example, by applying substances and/or elements, whereby the applied substances and/or elements can result in an improved application of the metal coating. It can be provided that both the chemical activation and the activation already described are carried out by means of a laser.

In one embodiment of the method, the surface of the carrier and/or the surface of the semiconductor chip is chemically activated using palladium. Palladium is an element that is well suited for chemical activation.

In one embodiment of the method, the semiconductor chip has a further contact region that faces away from the carrier. The surface of the semiconductor chip is activated after the semiconductor chip has been applied. A further electrically conductive connection is produced between the further contact region of the semiconductor chip and the carrier by means of a further metal coating in such a way that the further electrically conductive connection at least partially adjoins the carrier. This allows the further contact region to be contacted on an upper side of the semiconductor chip.

It can be provided that the semiconductor chip has both a contact area facing away from the carrier and a contact area facing the carrier. In this case, the surface of the carrier can be activated first, then the semiconductor chip can be applied and then the surface of the semiconductor chip can be activated, in which case an additional surface of the carrier can be activated. By applying the metal coating both contact areas are then connected to the carrier.

In one embodiment of the method, the carrier has an electrically conductive region. The electrically conductive connection is established between the contact region of the semiconductor chip and the electrically conductive region.

In one embodiment of the method, the electrically conductive connection is produced by metallization from an aqueous solution. Metal atoms, which later form the metallization, are dissolved in a solution, for example in the form of a salt. In particular, if the surface of the carrier or the semiconductor chip has been activated, this results in a good attachment of the metal atoms without, for example, having to apply a voltage from the outside.

In one embodiment of the method, the metallization is carried out in the form of a galvanic deposition. In particular, the metallization can be carried out in the form of an electroless galvanic deposition. This can, for example, lead to a further improvement in the deposition.

In one embodiment of the method, a conductive layer is produced on the carrier during application of the metal coating. This makes it possible to initially design the carrier without conductive layers and to accomplish the contacting of the semiconductor chip and the production of the conductive layers in one work step.

In one embodiment of the method, the electrically conductive connection is applied as a metal layer. The metal layer can in particular contain copper or consist entirely of copper. The metal layer may also contain or consist of nickel, gold, palladium, silver or tin.

In one embodiment of the method, after the electrically conductive connection between the contact region of the semiconductor chip and the carrier has been established, an electrical test voltage is applied to the semiconductor chip. If a fault in the semiconductor chip and/or the electrically conductive connection is detected, the electrically conductive connection is interrupted, a further adhesive layer is applied to the carrier, a further semiconductor chip is applied to the further adhesive layer, and a further electrically conductive connection is established between at least one further contact region of the further semiconductor chip and the carrier by means of a further metal coating. In this way, faulty semiconductor chips can be replaced.

In one embodiment of the method, the electrically conductive connection is interrupted by means of a laser. This enables the method to be implemented easily.

In one embodiment of the method, the semiconductor chip is an optoelectronic semiconductor chip, in particular a mini-LED or a micro-LED. The component can then be referred to as an optoelectronic component. The optoelectronic semiconductor chip can also be arranged in a housing or applied without a housing.

In one embodiment of the method, the optoelectronic semiconductor chip, i.e. possibly the mini-LED or the micro-LED, has a conversion element. Before the electrically conductive connection is established, a surface of the conversion element is activated. This activation can be designed as described above for the carrier or the semiconductor chip and can use the same methods. In one embodiment of the method, a conductive area of the carrier is covered with an insulating layer. When the electrically conductive connection is made, a conductive bridge is also created over the insulating layer. If necessary, the insulating layer can also be activated here using the methods described above.

According to a second aspect, the invention comprises a component with a carrier, a semiconductor chip and an electrically conductive connection. An adhesive layer is arranged between the carrier and the semiconductor chip. The electrically conductive connection is established between the carrier and at least one contact region of the semiconductor chip facing the carrier. The electrically conductive connection has a metal coating and is at least partially adjacent to an activated surface of the carrier.

The semiconductor chip can in particular contain an integrated circuit and be arranged in a chip housing. Alternatively, it can be provided that the semiconductor chip is designed without a housing. The semiconductor chip can also be an optoelectronic semiconductor chip, in particular a mini-LED or a micro-LED. The component can then be referred to as an optoelectronic component. The optoelectronic semiconductor chip can also be arranged in a housing or be designed without a housing.

In one embodiment of the component, the carrier has a first region adjacent to the metal coating and a second region outside the metal coating. A carrier surface of the carrier is rougher in the first region than in the second region. The rough carrier surface can be produced in particular by means of the activations described above. A roughness can be increased by at least 20 percent, for example.

In one embodiment of the component, no conductive region is arranged between the semiconductor chip and the carrier. In one embodiment of the component, the carrier surface under the semiconductor chip is at least partially rougher than in areas that are not covered by the semiconductor chip.

The above-described properties, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understandable in connection with the following description of the embodiments, which are explained in more detail in connection with the drawings. In each case, in a schematic representation,

Fig. 1 shows cross sections through various intermediate steps during a process for producing a component;

Fig. 2: Top views of the intermediate steps of Fig. 1;

Fig. 3 shows cross sections through various intermediate steps during a further process for producing a component;

Fig. 4: Top views of the intermediate steps of Fig. 3;

Fig. 5 shows cross sections through various intermediate steps during a further process for producing a component;

Fig. 6: Top views of the intermediate steps of Fig. 5;

Fig. 7 shows cross sections through various intermediate steps during a further process for producing a component;

Fig. 8: Top views of the intermediate steps of Fig. 7; Fig. 9 Cross sections through various intermediate steps during a further process for producing a component;

Fig. 10 shows plan views of various intermediate steps during a further method for producing a component;

Fig. 11 Cross sections through various intermediate steps during a further process for producing a component;

Fig. 12 is a side view of a component; and

Fig. 13 Top views of various intermediate steps during a further method for producing a component.

Fig. 1 shows cross sections through various intermediate steps during a method for producing a component 100. First (top cross section) a carrier 110 is provided which has an electrically non-conductive carrier material 111. The carrier material 111 is therefore designed to be electrically insulating. The carrier 110 also has optional conductive regions 112. The conductive regions 112 can be designed as conductor tracks, for example. In the next step, shown by the next cross section, an adhesive layer 120 is applied to the carrier 110. The adhesive layer 120 is arranged between the conductive regions 112, but can also be provided at a different location on the carrier 110. In the next step, shown by the next cross section, a semiconductor chip 130 is applied to the adhesive layer 120. The semiconductor chip 130 has two contact areas 131 with which the semiconductor chip 130 can be electrically contacted. If necessary, more than two contact areas 131 can also be provided. The contact areas 131 face the conductive areas 112. The semiconductor chip 130 covers the conductive areas 112 at least partially. In the next step, shown by the next cross section, an electrically conductive connection 150 is produced between the contact areas 131 of the semiconductor chip 130 and the carrier 110 by means of a metal coating 151. The electrically conductive connection 150 is produced in such a way that the electrically conductive connection 150 at least partially adjoins the carrier 110, here by adjoining the conductive areas 112 of the carrier 110. Because the semiconductor chip 130 at least partially covers the conductive areas 112, the metal coating 151 only has to fill a small gap between the contact areas 131 and the conductive areas 112. This ultimately results in a component 100 with a carrier 110, a semiconductor chip

130 and an electrically conductive connection 150, in which an adhesive layer 120 is arranged between the carrier 110 and the semiconductor chip 130 and the electrically conductive connection 150 between the carrier 110 and at least one contact region 131 of the semiconductor chip 130 is produced by means of a metal coating 151 and in which the electrically conductive connection 150 at least partially adjoins the carrier 110.

It can be provided that only one contact area 131 of the semiconductor chip 130 is connected to the carrier 110 by means of the electrically conductive connection 150. However, it can also be provided that all contact areas

131 of the semiconductor chip 130 can be connected to the carrier 110 by means of the electrically conductive connection 150. The semiconductor chip 130 can comprise, for example, an integrated circuit. In particular, in this case, more than two contact areas 131 can be provided. Alternatively, the semiconductor chip 130 can also be an optoelectronic semiconductor chip 130. The metal coating 151 can in particular comprise the metals copper, nickel, gold, silver, palladium or tin or consist entirely of one of these metals. The carrier material 111 can in particular be a glass, ceramic, metal or a thermoplastic material. or a thermosetting plastic, as well as a composite material consisting of several of the materials mentioned. The adhesive layer 120 can be applied, for example, in the form of adhesive dots or in the form of adhesive strips.

The adhesive of the adhesive layer 120 can be based on a polymer, based on a metal paste, have a B-stage material or consist of a B-stage material, have a sticky thermoplastic and/or a sticky duroplastic or consist of a sticky thermoplastic or a sticky duroplastic. The adhesive can in particular be designed to be electrically insulating.

Fig. 2 shows the intermediate steps of Fig. 1 in a plan view. The adhesive layer 120 is designed as an adhesive point 121.

In one embodiment, the electrically conductive connection 150 is produced by means of metallization from an aqueous solution. This represents a simple way of producing the electrically conductive connection 150. In particular, in this embodiment, it is not necessary to produce a sintered connection and/or a soldered connection. The metal coating 151 can be applied directly. This means that the use of silver as a sintered material and/or soldering material can be dispensed with. This reduces or completely eliminates silver corrosion or migration of silver atoms.

In one embodiment, the metallization is carried out in the form of a galvanic deposition. In particular, the metallization can be carried out in the form of an electroless galvanic deposition. This also enables a simple manufacturing process.

Fig. 3 shows cross sections through various intermediate steps during another process for producing a Component 100, the method being analogous to the method described in connection with FIGS. 1 and 2, unless differences are described below. In this embodiment, after the adhesive layer 120 has been applied, an activated region 140 is created, the activated region 140 being created by means of laser radiation 141. The activated region 140 is created on a surface 113 of the carrier 110. The activated region 140 can, for example, have increased roughness and can, for example, be at least 20 percent rougher than non-activated regions of the carrier 110. The activated region 140 makes it easier to coat with the metal coating 151. The laser radiation 141 can be infrared laser radiation. It can be provided that a laser for generating the laser radiation 141 has an output of approximately one watt. The laser can be operated in pulsed mode, for example, with a pulse length of 10 to 20, in particular 10 to 15, and for example with a pulse length of 12 picoseconds. The wavelength of the laser can be in the range 1000 to 1100 nanometers and can be, for example, 1064 nanometers.

Instead of the laser radiation 141, another method can also be used to produce the activated region 141. For example, chemical activation is possible. This can be done, for example, by means of a selective application of palladium. Furthermore, it can be provided to produce the activated region 140 both by the laser radiation 141 and by chemical activation. The production of the activated region 140 can be referred to as activating the corresponding surface 113.

In Fig. 3 it is shown that the creation of the activated region 140 takes place after the application of the adhesive layer 120. However, it is also conceivable to first create the activated region 140 and only then apply the adhesive layer 120. Fig. 4 shows top views of the various process steps of the process explained in connection with Fig. 3. In particular, it is visible that the activated regions 140 extend between the conductive regions 112 and the adhesive layer 120. The activated regions 140 also enclose the conductive regions 112, whereby this configuration is optional and, if necessary, only a lateral contact between the activated regions 140 and the conductive regions 112 can be provided.

Furthermore, Fig. 4 shows that the adhesive layer 120 is arranged perpendicular to the semiconductor chip 130 and forms a line. This can, for example, achieve improved electrical insulation, since the metal coating 151 may only adhere to the carrier 110 outside the adhesive layer 120. The design shown here in Fig. 4 can also be provided in the other exemplary embodiments. Furthermore, an adhesive point can alternatively also be provided in Figs. 3 and 4, as explained in connection with Figs. 1 and 2.

Fig. 5 shows cross sections through various intermediate steps during a further method for producing a component 100, the method being analogous to the method described in connection with Figs. 3 and 4, unless differences are described below. In contrast to the carrier 110 in Figs. 3 and 4, the carrier 110 has no conductive regions 112. The conductive regions 112 are only created by the application of the metal coating 151. This makes the method very flexible, since the guidance of the conductive regions 112 can be influenced by the irradiation with the laser radiation 141. This enables a further simplification of the manufacturing method.

Fig. 6 shows top views of the intermediate steps of the method of Fig. 5. Here it can be seen that the activated areas 140 have a projection 142, so that the activated areas 140, in contrast to Fig. 4, extend laterally over the semiconductor chip 130. This makes it possible to provide an improved electrically conductive connection 150. Such projections are also possible in the area of the conductive regions 112 in Figs. 3 and 4.

In addition to the metal coatings 151 shown in Fig. 5 and 6, other structures or other shapes can also be provided. For example, the metal coating can be designed such that the metal coatings 151 form a grid on the carrier 110 or that the metal coatings 151 form conductor tracks on the carrier 110.

In all embodiments of Figs. 3 to 6, the semiconductor chip 130 has at least one contact region 131 that faces the carrier 110. In particular, the semiconductor chip 130 has at least two such contact regions 131. The surface 113 of the carrier 110 is activated before the semiconductor chip 130 is applied.

In the embodiments of Fig. 3 to 6, the laser radiation 141 for forming the activated regions 140 can also be aligned with the shape and position of the adhesive layer 120. This makes it possible, for example, to compensate for positioning errors in the adhesive layer 120.

Fig. 7 shows cross sections through various intermediate steps during a further method for producing a component 100, the method being analogous to the method described in connection with Figs. 3 and 4, unless differences are described below. The adhesive layer 120 is applied as a flat layer. In this method, after the adhesive layer 120 has been applied, the semiconductor chip 130 is first applied, in this case the contact areas 131 of the semiconductor chip 130 facing away from the carrier 110. Furthermore, the adhesive layer 120 is partially removed so that the adhesive layer 120 is arranged exclusively below the semiconductor chip 130. Furthermore, in addition to a surface 113 of the carrier, a Surface 132 of the semiconductor chip 130 is activated so that the activated region 140 extends from the carrier 110 to the semiconductor chip 130. The activated regions 140 can be produced using the methods already described. Here too, the electrically conductive connection 150 is subsequently produced in the form of a metal coating 151.

Fig. 8 shows top views of the intermediate steps of Fig. 7. Here too, it is clear that the activated regions 140 are formed both on the surface 113 of the carrier 110 and on the surface 132 of the semiconductor chip 130. The activated regions 140 do not have a projection 142, but one can also be provided. In the embodiment of Figs. 7 and 8, a conductive region 112 is again arranged on the carrier 110. However, this can also be produced as a metal coating 151, analogous to Figs. 5 and 6.

In one embodiment, after the semiconductor chip 130 has been applied, a position of the semiconductor chip 130 is determined and the metal coating 151 is adapted to the position. This can be done in particular by adapting the activated region 140.

Fig. 9 shows cross sections through various intermediate steps during a further method for producing a component 100, the method being analogous to the method described in connection with Figs. 3 and 4, unless differences are described below. The semiconductor chip 130 has a contact region 131 facing the carrier 110 and a contact region 131 facing away from the carrier 110. For this reason, an activated region 140 is created analogously to Figs. 3 and 4 before the semiconductor chip 130 is applied and an activated region 140 after the semiconductor chip 130 is applied, the latter activated region again extending analogously to Fig. 7 onto a surface 132 of the semiconductor chip 130. Here too, in connection with the above From exemplary embodiments, optional designs are again possible, such as projections 142 or the omission of the guide regions 112 on the carrier 110 or the creation of the guide regions 112 during the application of the metal coating 151.

Fig. 10 shows plan views of various intermediate steps during a further method for producing a component 100. The component 100 is initially produced as explained in connection with Figs. 7 and 8, whereby the methodology described below can also be applied analogously to the other embodiments of the method. After the electrically conductive connection 150 has been produced between the contact region 131 of the semiconductor chip 130 and the carrier 110, an electrical test voltage is applied to the semiconductor chip 130, for example via the metal coating 151. In the event that a fault in the semiconductor chip 130 and/or the electrically conductive connection 150 is detected, the electrically conductive connection 150 is interrupted. This is shown in Fig. 10 as a separation 152. A further adhesive layer 122 is then applied to the carrier 110. A further semiconductor chip 133 is applied to the further adhesive layer 122. A further electrically conductive connection 153 is then produced between at least one further contact region 134 of the further semiconductor chip 133 and the carrier 110 by means of a further metal coating 154. In Fig. 10, this is done by forming a further activated region 143 on the surface 113 of the carrier 110 and a surface 132 of the further semiconductor chip 133 and then applying the metal coating 151. The further activated region 143 can be produced using the methods already described. It can be provided that the severing 152 takes place using laser radiation. Finally, a component 100 with a further semiconductor chip 133 is produced, which may not have any defects. Fig. 11 shows cross sections through various intermediate steps during a further method for producing a component 100, which corresponds to the method of Figs. 7 and 8, unless differences are described below. The semiconductor chip 130 in this case is an optoelectronic semiconductor chip 130, for example a miniLED or a micro-LED. The optoelectronic semiconductor chip 130 has a conversion element 135. The activated region 140 is also formed on a surface 136 of the conversion element 135. This is particularly useful when the optoelectronic semiconductor chip 130 has contact regions 131 that face away from the carrier 110 and/or the conversion element 135 is arranged between the optoelectronic semiconductor chip 130 and the carrier 110.

In the embodiments of Fig. 7, 8 and 11, the laser radiation 141 can also be aligned to form the activated regions 140 at a position of the semiconductor chip 130. This makes it possible, for example, to compensate for position errors of the semiconductor chip 130.

Fig. 12 shows a side view of a component 100 that can correspond to the component 100 shown in Fig. 11. The metal coating 151 is also arranged on the side of the optoelectronic semiconductor chip 130. This can enable improved contacting. An analogous design can also be provided for the component 100 of Fig. 8 if the conversion element 135 is omitted and a semiconductor chip 130 is generally used.

Fig. 13 shows plan views of various intermediate steps during a further method for producing a component 100. The component 100 is initially produced as explained in connection with Figs. 1 to 4, but can also be produced using the methods explained in connection with Figs. 5 to 11. Following these methods already described, a conductive region 112 of the carrier 110 is covered with an insulation layer 123. To produce the electrically conductive connection 150, a conductor bridge 155 is additionally created over the insulation layer 123. In this case, in Fig. 12, an activated region 140 is optionally guided over the insulation layer 123. The insulation layer 123 can be an adhesive layer.

As a result, the steps used to produce the component 100 can also be used to produce cross-routed lines on the carrier 110. The invention has been illustrated and described in more detail using the preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations can be derived by the person skilled in the art from the described embodiments without departing from the scope of the invention.

LIST OF REFERENCE SYMBOLS Component Carrier Carrier material Conductive area Surface Adhesive layer Adhesive point Further adhesive layer Insulation layer Semiconductor chip Contact area Surface Further semiconductor chip Further contact area Conversion element Surface Activated area Laser radiation Projection Further activated area Electrically conductive connection Metal coating Cutting Further electrically conductive connection Further metal coating Cable bridge

Claims

PATENT CLAIMS Method for producing a component (100), comprising the following steps:

Providing a carrier (110), wherein the carrier (110) comprises an electrically non-conductive carrier material (111);

Applying an adhesive layer (120) to the carrier (110);

Applying a semiconductor chip (130) to the adhesive layer (120), wherein the semiconductor chip (130) has a contact region (131) facing the carrier (110), wherein a surface (113) of the carrier (110) is activated before the application of the semiconductor chip (130);

Producing an electrically conductive connection (150) between the contact region (131) of the semiconductor chip (130) and the carrier (110) by means of a metal coating (151) such that the electrically conductive connection (150) at least partially adjoins the carrier (110). Method according to claim 1, wherein after the application of the semiconductor chip (130), a position of the semiconductor chip

(130) is determined and the metal coating (151) is adapted to the position. Method according to one of the preceding claims, wherein the semiconductor chip (130) has a further contact region (131) which faces away from the carrier (110) and wherein the surface (132) of the semiconductor chip (130) is activated after the application of the semiconductor chip (130), wherein the method comprises the following further step:

Establishing a further electrically conductive connection (150) between the further contact area

(131) of the semiconductor chip (130) and the carrier (110) by means of a further metal coating (151) such that the further electrically conductive connection (150) at least partially adjoins the carrier (110). Method according to one of the preceding claims, wherein the surface (113) of the carrier (110) and/or the surface (132) of the semiconductor chip (130) is activated by means of laser radiation (141). Method according to one of the preceding claims, wherein the surface (113) of the carrier (110) and/or the surface (132) of the semiconductor chip (130) is chemically activated. Method according to claim 5, wherein the surface (113) of the carrier (110) and/or the surface (132) of the semiconductor chip (130) is chemically activated by means of palladium. Method according to one of the preceding claims, wherein the carrier (110) has an electrically conductive region (112), wherein the electrically conductive connection (150) is produced between the contact region (131) of the semiconductor chip (130) and the electrically conductive region (112). Method according to one of the preceding claims, wherein the electrically conductive connection (150) is produced by means of metallization from an aqueous solution. Method according to claim 8, wherein the metallization is carried out in the form of an electroless galvanic deposition. Method according to one of the preceding claims, wherein a conductive layer (112) on the carrier (110) during applying the metal coating (151). Method according to one of the preceding claims, wherein the electrically conductive connection (150) is applied as a metal layer. Method according to one of the preceding claims, wherein after the electrically conductive connection has been produced

(150) between the contact region (131) of the semiconductor chip (130) and the carrier (110), an electrical test voltage is applied to the semiconductor chip (130), and if a fault in the semiconductor chip (130) and/or the electrically conductive connection (150) is detected, the electrically conductive connection (150) is interrupted, a further adhesive layer (122) is applied to the carrier (110), a further semiconductor chip (133) is applied to the further adhesive layer (122), and a further electrically conductive connection (153) is produced between at least one further contact region (134) of the further semiconductor chip (133) and the carrier (110) by means of a further metal coating (154). Method according to claim 13, wherein the electrically conductive connection (150) is interrupted by means of a laser. Method according to one of the preceding claims, wherein the semiconductor chip (130) is an optoelectronic semiconductor chip (130), in particular a mini-LED or a micro-LED. Method according to claim 15, wherein the optoelectronic semiconductor chip (130) has a conversion element (135), wherein a surface (136) of the conversion element (135) is activated before the electrically conductive connection (150) is produced. Method according to one of the preceding claims, wherein a conductive region (112) of the carrier (110) is covered with an insulating layer (123) and, when producing the electrically conductive connection (150), a conductive bridge (155) is additionally produced over the insulating layer (123). Component (100) with a carrier (110), a semiconductor chip (130) and an electrically conductive connection (150), wherein an adhesive layer (120) is arranged between the carrier (110) and the semiconductor chip (130), wherein the electrically conductive connection (150) is produced between the carrier (110) and at least one contact region (131) of the semiconductor chip (130) facing the carrier (110), and wherein the electrically conductive connection (150) has a metal coating (151), wherein the electrically conductive connection

(150) at least partially adjoins an activated surface (113) of the carrier (110). Component (100) according to claim 18, wherein the carrier (110) has a first region adjacent to the metal coating

(151) and a second region outside the metal coating (151), and a carrier surface (113) of the carrier (110) is rougher in the first region than in the second region.