KR890016678A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR890016678A
KR890016678A KR1019890004443A KR890004443A KR890016678A KR 890016678 A KR890016678 A KR 890016678A KR 1019890004443 A KR1019890004443 A KR 1019890004443A KR 890004443 A KR890004443 A KR 890004443A KR 890016678 A KR890016678 A KR 890016678A
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South Korea
Prior art keywords
metal
semiconductor substrate
electrodes
terminals
metal electrodes
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KR1019890004443A
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English (en)
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KR920005319B1 (ko
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슈죠 사에키
마고토 히데시마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Publication of KR890016678A publication Critical patent/KR890016678A/ko
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Publication of KR920005319B1 publication Critical patent/KR920005319B1/ko

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    • H01L23/049Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제3도는 본 발명에 따른 반도체장치의 제1실시예 내지 제3실시예를 나타내는 모식적 단면도.

Claims (3)

  1. 한쪽의 표면에 금속전극(4, 5)을 갖춘 반도체기판(1)과, 이 반도체기판(1)과 전기적으로 절연되어 있는 금속단자(11B, 11E), 이 금속단자(11B, 11E)와 상기 표면의 금속전극(4, 5)을 전기적으로 접속하는 금속세선(12, 13), 이금속세선(12, 13)보다 큰 전류용량을 가지면서 그 일단이 상기 금속단자(11B, 11E)에 접속됨과 더불어 그 다른단(22)이 상기 반도체기판(1) 표면의 금속전극(4, 5)과 접촉되지 않고 근접되게 탑재되어 있는 금속도체(23)를 구비하여 구성된 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 금속도체(23)의 다른단(22)이 상기 금속세선(12, 13)에 전기적으로 접속된 상기 금속전극(4, 5)상에 탑재되어 구성된 것을 특징으로 하는 반도체장치.
  3. 제1항 또는 제2항에 있어서, 상기 금속도체(23)의 다른단(22)을 상기 반도체기판(1) 표면의 금속전극(4,5)에 압착시키는 압착수단(26)을 구비하여 구성된 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890004443A 1988-04-05 1989-04-04 반도체장치 KR920005319B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63082339A JPH0734457B2 (ja) 1988-04-05 1988-04-05 半導体装置
JP63-082339 1988-04-05
JP63-82339 1988-04-05

Publications (2)

Publication Number Publication Date
KR890016678A true KR890016678A (ko) 1989-11-29
KR920005319B1 KR920005319B1 (ko) 1992-07-02

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Application Number Title Priority Date Filing Date
KR1019890004443A KR920005319B1 (ko) 1988-04-05 1989-04-04 반도체장치

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Country Link
US (1) US5130784A (ko)
EP (1) EP0340466B1 (ko)
JP (1) JPH0734457B2 (ko)
KR (1) KR920005319B1 (ko)
DE (1) DE68919263T2 (ko)

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* Cited by examiner, † Cited by third party
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JP2782647B2 (ja) * 1991-08-06 1998-08-06 富士電機株式会社 半導体装置
JP2936855B2 (ja) * 1991-12-26 1999-08-23 富士電機株式会社 電力用半導体装置
US5559374A (en) * 1993-03-25 1996-09-24 Sanyo Electric Co., Ltd. Hybrid integrated circuit
US6232654B1 (en) * 1998-07-10 2001-05-15 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Semiconductor module
DE10204403A1 (de) * 2002-02-04 2003-08-21 Infineon Technologies Ag Vorrichtung zur Verbindung eines IC-Anschlusses mit einem Bezugspotential
DE10244748A1 (de) * 2002-09-25 2003-09-11 Siemens Ag Leistungshalbleitermodul und Verfahren zur Herstellung desselben
JP2007123644A (ja) * 2005-10-31 2007-05-17 Mitsubishi Electric Corp 電力半導体装置
EP3633723B1 (en) 2009-05-14 2023-02-22 Rohm Co., Ltd. Semiconductor device
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DE68919263T2 (de) 1995-04-13
JPH0734457B2 (ja) 1995-04-12
EP0340466A3 (en) 1991-01-09
KR920005319B1 (ko) 1992-07-02
EP0340466B1 (en) 1994-11-09
DE68919263D1 (de) 1994-12-15
EP0340466A2 (en) 1989-11-08
US5130784A (en) 1992-07-14
JPH01255257A (ja) 1989-10-12

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