KR910003784A - 반도체소자 - Google Patents

반도체소자 Download PDF

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Publication number
KR910003784A
KR910003784A KR1019900011382A KR900011382A KR910003784A KR 910003784 A KR910003784 A KR 910003784A KR 1019900011382 A KR1019900011382 A KR 1019900011382A KR 900011382 A KR900011382 A KR 900011382A KR 910003784 A KR910003784 A KR 910003784A
Authority
KR
South Korea
Prior art keywords
semiconductor device
conductive material
tungsten
vector
note
Prior art date
Application number
KR1019900011382A
Other languages
English (en)
Other versions
KR0184634B1 (ko
Inventor
유수게 하라다
Original Assignee
고스기 노부미쓰
오끼뎅끼 고오교오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고스기 노부미쓰, 오끼뎅끼 고오교오 가부시끼가이샤 filed Critical 고스기 노부미쓰
Publication of KR910003784A publication Critical patent/KR910003784A/ko
Application granted granted Critical
Publication of KR0184634B1 publication Critical patent/KR0184634B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

반도체소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 배선구조도,
제4도 (a)∼(c)는 본 발명의 일 실시예를 표시하는 공정단면도,
제5도는 W막의 X선회절 패턴도.

Claims (1)

  1. 절연막에 설치된 개공부에 충진된 도전성재료의 적어도 한쪽의 단부가 Al-Si계 합금배선재료와 접촉하여 이루어진 배선구조를 포함하는 반도체소자에 있어서, 상기 도전성 재료가 CVD법에 의하여 형성된 β-W(벡터텅스텐)인 것을 특징으로 하는 반도체 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900011382A 1989-07-26 1990-07-26 반도체소자 KR0184634B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01-191304 1989-07-26
JP1191304A JP2765967B2 (ja) 1989-07-26 1989-07-26 半導体素子

Publications (2)

Publication Number Publication Date
KR910003784A true KR910003784A (ko) 1991-02-28
KR0184634B1 KR0184634B1 (ko) 1999-04-15

Family

ID=16272336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011382A KR0184634B1 (ko) 1989-07-26 1990-07-26 반도체소자

Country Status (3)

Country Link
US (1) US5126825A (ko)
JP (1) JP2765967B2 (ko)
KR (1) KR0184634B1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE150585T1 (de) * 1990-05-31 1997-04-15 Canon Kk Verfahren zur herstellung einer halbleitervorrichtung mit einer verdrahtungsstruktur hoher dichte
JPH04267586A (ja) * 1991-02-22 1992-09-24 Nec Corp 同軸配線パターンおよびその形成方法
US5250834A (en) * 1991-09-19 1993-10-05 International Business Machines Corporation Silicide interconnection with schottky barrier diode isolation
JP2684978B2 (ja) * 1993-11-25 1997-12-03 日本電気株式会社 半導体装置
KR100228764B1 (ko) * 1996-06-24 1999-11-01 김영환 캐패시터 하부 전극 형성방법
US6452276B1 (en) * 1998-04-30 2002-09-17 International Business Machines Corporation Ultra thin, single phase, diffusion barrier for metal conductors
JP5066565B2 (ja) * 2007-03-22 2012-11-07 パナソニック株式会社 記憶素子及び記憶装置
WO2010004675A1 (ja) 2008-07-11 2010-01-14 パナソニック株式会社 電流抑制素子、記憶素子、及びこれらの製造方法
JP6166508B2 (ja) * 2011-12-21 2017-07-19 トランスフォーム・ジャパン株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902645A (en) * 1987-08-24 1990-02-20 Fujitsu Limited Method of selectively forming a silicon-containing metal layer

Also Published As

Publication number Publication date
US5126825A (en) 1992-06-30
JP2765967B2 (ja) 1998-06-18
JPH0357214A (ja) 1991-03-12
KR0184634B1 (ko) 1999-04-15

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