KR970003541A - 반도체장치의 알루미늄계 금속배선 - Google Patents

반도체장치의 알루미늄계 금속배선 Download PDF

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Publication number
KR970003541A
KR970003541A KR1019960024227A KR19960024227A KR970003541A KR 970003541 A KR970003541 A KR 970003541A KR 1019960024227 A KR1019960024227 A KR 1019960024227A KR 19960024227 A KR19960024227 A KR 19960024227A KR 970003541 A KR970003541 A KR 970003541A
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KR
South Korea
Prior art keywords
based metal
insulating film
aluminum
semiconductor device
metal wiring
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KR1019960024227A
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English (en)
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KR100364349B1 (ko
Inventor
가즈히데 고야마
Original Assignee
오가 노리오
소니 가부시기가이샤
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Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR970003541A publication Critical patent/KR970003541A/ko
Application granted granted Critical
Publication of KR100364349B1 publication Critical patent/KR100364349B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 Al계 금속배선에 있어서 발생하는 일렉트로마이그레이션에 의한 보이드의 발생을 억제하여 배선의 신뢰성의 향상을 도모한다.
반도체장치에 사용되는 절연막(제2절연막 21)의 일면측에 배설된 도전부(제1배선 12)에 제2절연막(21)에 형성한 접속공(22)을 통하여 접속되는 것으로 제2절연막(21)의 타면측에 배설된 Al계 금속배선의 제2배선(31)에 있어서, 접속공(22)의 근방에 있어서의 제2배선(31)에 Al계 금속으로 이루어지는 보상용 패턴(41)을 배설한 것이다.

Description

반도체장치의 알루미늄계 금속배선
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 개략구성단면도, 제2도는 제1실시예의 제조공정도.

Claims (1)

  1. 반도체장치에 사용되는 절연막의 일면측에 배설된 도전부에 이 절연막을 형성한 접속공을 통하여 접속되는 것으로 이 절연막의 타면측에 배설된 알루미늄계 금속배선에 있어서, 상기 접속공의 근방에 있어서의 상기 알루미늄계 금속배선에 알루미늄계 금속으로 이루어지는 보상용 패턴을 배설한 것을 특징으로 하는 반도체장치의 알루미늄계 금속배선.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960024227A 1995-06-30 1996-06-27 반도체장치 KR100364349B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-165220 1995-06-30
JP7165220A JPH0917785A (ja) 1995-06-30 1995-06-30 半導体装置のアルミニウム系金属配線

Publications (2)

Publication Number Publication Date
KR970003541A true KR970003541A (ko) 1997-01-28
KR100364349B1 KR100364349B1 (ko) 2003-03-03

Family

ID=15808141

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960024227A KR100364349B1 (ko) 1995-06-30 1996-06-27 반도체장치

Country Status (3)

Country Link
US (1) US5864179A (ko)
JP (1) JPH0917785A (ko)
KR (1) KR100364349B1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5565707A (en) * 1994-10-31 1996-10-15 International Business Machines Corporation Interconnect structure using a Al2 Cu for an integrated circuit chip
US5926736A (en) * 1996-10-30 1999-07-20 Stmicroelectronics, Inc. Low temperature aluminum reflow for multilevel metallization
TW451450B (en) * 1997-04-28 2001-08-21 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device with a multilayer wiring
US6197685B1 (en) * 1997-07-11 2001-03-06 Matsushita Electronics Corporation Method of producing multilayer wiring device with offset axises of upper and lower plugs
US6171957B1 (en) * 1997-07-16 2001-01-09 Mitsubishi Denki Kabushiki Kaisha Manufacturing method of semiconductor device having high pressure reflow process
US5981378A (en) * 1997-07-25 1999-11-09 Vlsi Technology, Inc. Reliable interconnect via structures and methods for making the same
US6417569B1 (en) * 1997-12-11 2002-07-09 Taiwan Semiconductor Manufacturing Company Fluorine-doped silicate glass hard mask to improve metal line etching profile
JPH11186382A (ja) * 1997-12-19 1999-07-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100403358B1 (ko) * 1997-12-19 2003-12-18 주식회사 하이닉스반도체 반도체 장치의 금속 배선 형성 방법
US6906421B1 (en) * 1998-01-14 2005-06-14 Cypress Semiconductor Corporation Method of forming a low resistivity Ti-containing interconnect and semiconductor device comprising the same
JPH11354637A (ja) * 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
KR100267106B1 (ko) * 1998-09-03 2000-10-02 윤종용 반도체 소자의 다층 배선 형성방법
JP3353727B2 (ja) 1998-12-21 2002-12-03 日本電気株式会社 半導体装置の配線構造の形成方法
JP3530073B2 (ja) * 1999-05-25 2004-05-24 株式会社東芝 半導体装置及びその製造方法
US6245675B1 (en) 2000-01-24 2001-06-12 Taiwan Semiconductor Manufacturing Company 3D reservoir to improve electromigration resistance of tungsten plug
US7585764B2 (en) * 2005-08-09 2009-09-08 International Business Machines Corporation VIA bottom contact and method of manufacturing same
DE102006025365B4 (de) * 2006-05-31 2010-10-07 Advanced Micro Devices, Inc., Sunnyvale Teststruktur zum Abschätzen von Elektromigrationseffekten, die durch poröse Barrierenmaterialien hervorgerufen werden

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
US5506450A (en) * 1995-05-04 1996-04-09 Motorola, Inc. Semiconductor device with improved electromigration resistance and method for making the same

Also Published As

Publication number Publication date
JPH0917785A (ja) 1997-01-17
US5864179A (en) 1999-01-26
KR100364349B1 (ko) 2003-03-03

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