DE68919263D1 - Halbleiteranordnung mit Zuleitungen. - Google Patents

Halbleiteranordnung mit Zuleitungen.

Info

Publication number
DE68919263D1
DE68919263D1 DE68919263T DE68919263T DE68919263D1 DE 68919263 D1 DE68919263 D1 DE 68919263D1 DE 68919263 T DE68919263 T DE 68919263T DE 68919263 T DE68919263 T DE 68919263T DE 68919263 D1 DE68919263 D1 DE 68919263D1
Authority
DE
Germany
Prior art keywords
metallic
electrode
leads
semiconductor arrangement
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919263T
Other languages
English (en)
Other versions
DE68919263T2 (de
Inventor
Shuzo C O Patent Divisio Saeki
Makoto C O Patent Di Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68919263D1 publication Critical patent/DE68919263D1/de
Publication of DE68919263T2 publication Critical patent/DE68919263T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Bipolar Transistors (AREA)
DE1989619263 1988-04-05 1989-04-05 Halbleiteranordnung mit Zuleitungen. Expired - Fee Related DE68919263T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63082339A JPH0734457B2 (ja) 1988-04-05 1988-04-05 半導体装置

Publications (2)

Publication Number Publication Date
DE68919263D1 true DE68919263D1 (de) 1994-12-15
DE68919263T2 DE68919263T2 (de) 1995-04-13

Family

ID=13771808

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989619263 Expired - Fee Related DE68919263T2 (de) 1988-04-05 1989-04-05 Halbleiteranordnung mit Zuleitungen.

Country Status (5)

Country Link
US (1) US5130784A (de)
EP (1) EP0340466B1 (de)
JP (1) JPH0734457B2 (de)
KR (1) KR920005319B1 (de)
DE (1) DE68919263T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2782647B2 (ja) * 1991-08-06 1998-08-06 富士電機株式会社 半導体装置
JP2936855B2 (ja) * 1991-12-26 1999-08-23 富士電機株式会社 電力用半導体装置
US5559374A (en) * 1993-03-25 1996-09-24 Sanyo Electric Co., Ltd. Hybrid integrated circuit
US6232654B1 (en) * 1998-07-10 2001-05-15 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Semiconductor module
DE10204403A1 (de) * 2002-02-04 2003-08-21 Infineon Technologies Ag Vorrichtung zur Verbindung eines IC-Anschlusses mit einem Bezugspotential
DE10244748A1 (de) * 2002-09-25 2003-09-11 Siemens Ag Leistungshalbleitermodul und Verfahren zur Herstellung desselben
JP2007123644A (ja) * 2005-10-31 2007-05-17 Mitsubishi Electric Corp 電力半導体装置
WO2010131679A1 (ja) * 2009-05-14 2010-11-18 ローム株式会社 半導体装置
JP6439552B2 (ja) * 2015-04-01 2018-12-19 富士電機株式会社 半導体モジュール及び半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4009485A (en) * 1974-12-23 1977-02-22 General Electric Company Semiconductor pellet assembly mounted on ceramic substrate
DE7512573U (de) * 1975-04-19 1975-09-04 Semikron Gesellschaft Fuer Gleichri Halbleitergleichrichteranordnung
US4314270A (en) * 1977-12-02 1982-02-02 Mitsubishi Denki Kabushiki Kaisha Hybrid thick film integrated circuit heat dissipating and grounding assembly
US4518982A (en) * 1981-02-27 1985-05-21 Motorola, Inc. High current package with multi-level leads
JPS5866640U (ja) * 1981-10-29 1983-05-06 新電元工業株式会社 半導体装置
DE3309679A1 (de) * 1983-03-17 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit giessharzfuellung
JPS63265461A (ja) * 1986-12-15 1988-11-01 Fuji Electric Co Ltd 半導体装置

Also Published As

Publication number Publication date
KR890016678A (ko) 1989-11-29
DE68919263T2 (de) 1995-04-13
JPH0734457B2 (ja) 1995-04-12
EP0340466B1 (de) 1994-11-09
JPH01255257A (ja) 1989-10-12
EP0340466A2 (de) 1989-11-08
US5130784A (en) 1992-07-14
KR920005319B1 (ko) 1992-07-02
EP0340466A3 (de) 1991-01-09

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