CA2408582A1 - Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors - Google Patents
Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors Download PDFInfo
- Publication number
- CA2408582A1 CA2408582A1 CA002408582A CA2408582A CA2408582A1 CA 2408582 A1 CA2408582 A1 CA 2408582A1 CA 002408582 A CA002408582 A CA 002408582A CA 2408582 A CA2408582 A CA 2408582A CA 2408582 A1 CA2408582 A1 CA 2408582A1
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- Prior art keywords
- layer
- type epitaxial
- forming
- epitaxial layer
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 82
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 153
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 149
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 230000005669 field effect Effects 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 238000002161 passivation Methods 0.000 claims abstract description 66
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- 239000011651 chromium Substances 0.000 claims abstract description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 73
- 229910052681 coesite Inorganic materials 0.000 claims description 42
- 229910052906 cristobalite Inorganic materials 0.000 claims description 42
- 229910052682 stishovite Inorganic materials 0.000 claims description 42
- 229910052905 tridymite Inorganic materials 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 37
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 35
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- 238000000342 Monte Carlo simulation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020169 SiOa Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/567,717 | 2000-05-10 | ||
US09/567,717 US6686616B1 (en) | 2000-05-10 | 2000-05-10 | Silicon carbide metal-semiconductor field effect transistors |
PCT/US2001/004957 WO2001086727A2 (en) | 2000-05-10 | 2001-02-15 | Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2408582A1 true CA2408582A1 (en) | 2001-11-15 |
Family
ID=24268352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002408582A Abandoned CA2408582A1 (en) | 2000-05-10 | 2001-02-15 | Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors |
Country Status (9)
Country | Link |
---|---|
US (2) | US6686616B1 (ja) |
EP (2) | EP1285464A2 (ja) |
JP (2) | JP5255743B2 (ja) |
KR (1) | KR100726365B1 (ja) |
CN (1) | CN1286184C (ja) |
AU (1) | AU2001238351A1 (ja) |
CA (1) | CA2408582A1 (ja) |
TW (1) | TW492198B (ja) |
WO (1) | WO2001086727A2 (ja) |
Families Citing this family (142)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6686616B1 (en) | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
AU2002246934A1 (en) * | 2001-01-03 | 2002-07-16 | Mississippi State University | Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
CN1557024B (zh) | 2001-07-24 | 2010-04-07 | 美商克立股份有限公司 | 绝缘栅铝镓氮化物/氮化钾高电子迁移率晶体管(hemt) |
US6906350B2 (en) * | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
JP4009106B2 (ja) * | 2001-12-27 | 2007-11-14 | 浜松ホトニクス株式会社 | 半導体受光素子、及びその製造方法 |
JP2003228320A (ja) * | 2002-02-05 | 2003-08-15 | Matsushita Electric Ind Co Ltd | プラズマディスプレイ装置 |
DE10304722A1 (de) * | 2002-05-11 | 2004-08-19 | United Monolithic Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
US6833556B2 (en) * | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
US6956239B2 (en) * | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
US7026650B2 (en) | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
US9515135B2 (en) * | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
US7112860B2 (en) | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
US7898047B2 (en) * | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
CN1532943B (zh) * | 2003-03-18 | 2011-11-23 | 松下电器产业株式会社 | 碳化硅半导体器件及其制造方法 |
DE10312214B4 (de) * | 2003-03-19 | 2008-11-20 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von mindestens einer Mesa- oder Stegstruktur oder von mindestens einem elektrisch gepumpten Bereich in einer Schicht oder Schichtenfolge |
JP4109159B2 (ja) * | 2003-06-13 | 2008-07-02 | 浜松ホトニクス株式会社 | 半導体受光素子 |
WO2004112150A1 (ja) * | 2003-06-13 | 2004-12-23 | Sumitomo Electric Industries, Ltd. | 電界効果トランジスタ |
JP4530171B2 (ja) * | 2003-08-08 | 2010-08-25 | サンケン電気株式会社 | 半導体装置 |
US20050104072A1 (en) * | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
US7501669B2 (en) * | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
KR100448352B1 (ko) * | 2003-11-28 | 2004-09-10 | 삼성전기주식회사 | GaN 기반 질화막의 형성방법 |
US7084475B2 (en) * | 2004-02-17 | 2006-08-01 | Velox Semiconductor Corporation | Lateral conduction Schottky diode with plural mesas |
US7470967B2 (en) * | 2004-03-12 | 2008-12-30 | Semisouth Laboratories, Inc. | Self-aligned silicon carbide semiconductor devices and methods of making the same |
US7275357B2 (en) * | 2004-03-30 | 2007-10-02 | Cnh America Llc | Cotton module program control using yield monitor signal |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
WO2005114746A1 (en) * | 2004-05-21 | 2005-12-01 | Nanyang Technological University | Novel structures of silicon carbide metal semiconductor field effect transistors for high voltage and high power applications |
US7345309B2 (en) * | 2004-08-31 | 2008-03-18 | Lockheed Martin Corporation | SiC metal semiconductor field-effect transistor |
US7238224B2 (en) * | 2004-10-29 | 2007-07-03 | Hewlett-Packard Development Company, L.P. | Fluid-gas separator |
US20060091606A1 (en) * | 2004-10-28 | 2006-05-04 | Gary Paugh | Magnetic building game |
US7348612B2 (en) * | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
US7265399B2 (en) * | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
US7326962B2 (en) * | 2004-12-15 | 2008-02-05 | Cree, Inc. | Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
US7476594B2 (en) * | 2005-03-30 | 2009-01-13 | Cree, Inc. | Methods of fabricating silicon nitride regions in silicon carbide and resulting structures |
DE102005023361A1 (de) * | 2005-05-20 | 2006-11-23 | Robert Bosch Gmbh | Feldeffekttransistor |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US8203185B2 (en) * | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
US7525122B2 (en) * | 2005-06-29 | 2009-04-28 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7855401B2 (en) * | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7282401B2 (en) * | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
US20070018199A1 (en) | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
JP5011493B2 (ja) * | 2005-09-14 | 2012-08-29 | 関西電力株式会社 | 炭化珪素半導体素子の製造方法 |
JP2009509339A (ja) | 2005-09-16 | 2009-03-05 | クリー インコーポレイテッド | 炭化ケイ素パワーデバイスを有する半導体ウェハを処理する方法 |
CN100593243C (zh) | 2005-10-19 | 2010-03-03 | 三菱电机株式会社 | Mosfet以及mosfet的制造方法 |
US7402844B2 (en) * | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
US7368971B2 (en) * | 2005-12-06 | 2008-05-06 | Cree, Inc. | High power, high frequency switch circuits using strings of power transistors |
US7419892B2 (en) * | 2005-12-13 | 2008-09-02 | Cree, Inc. | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
US7964514B2 (en) * | 2006-03-02 | 2011-06-21 | Applied Materials, Inc. | Multiple nitrogen plasma treatments for thin SiON dielectrics |
DE102006012369A1 (de) * | 2006-03-17 | 2007-09-20 | United Monolithic Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements mit einer metallischen Steuerelektrode und Halbleiterbauelement |
US8269262B2 (en) * | 2006-05-02 | 2012-09-18 | Ss Sc Ip Llc | Vertical junction field effect transistor with mesa termination and method of making the same |
US7274083B1 (en) * | 2006-05-02 | 2007-09-25 | Semisouth Laboratories, Inc. | Semiconductor device with surge current protection and method of making the same |
US7880166B2 (en) | 2006-05-10 | 2011-02-01 | Ho-Yuan Yu | Fast recovery reduced p-n junction rectifier |
US8669554B2 (en) | 2006-05-10 | 2014-03-11 | Ho-Yuan Yu | Fast recovery reduced p-n junction rectifier |
US9040398B2 (en) * | 2006-05-16 | 2015-05-26 | Cree, Inc. | Method of fabricating seminconductor devices including self aligned refractory contacts |
JP5061506B2 (ja) * | 2006-06-05 | 2012-10-31 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
US7602001B2 (en) | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
US7646043B2 (en) * | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
JP4844330B2 (ja) * | 2006-10-03 | 2011-12-28 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP5520432B2 (ja) * | 2006-10-03 | 2014-06-11 | 古河電気工業株式会社 | 半導体トランジスタの製造方法 |
CN100411141C (zh) * | 2006-10-16 | 2008-08-13 | 中国电子科技集团公司第五十五研究所 | 碳化硅器件的电学隔离方法 |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
JP5105160B2 (ja) | 2006-11-13 | 2012-12-19 | クリー インコーポレイテッド | トランジスタ |
US7692263B2 (en) | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
JP5183913B2 (ja) * | 2006-11-24 | 2013-04-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
US8878245B2 (en) | 2006-11-30 | 2014-11-04 | Cree, Inc. | Transistors and method for making ohmic contact to transistors |
JP4751308B2 (ja) | 2006-12-18 | 2011-08-17 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
US7880172B2 (en) * | 2007-01-31 | 2011-02-01 | Cree, Inc. | Transistors having implanted channels and implanted P-type regions beneath the source region |
US8021904B2 (en) * | 2007-02-01 | 2011-09-20 | Cree, Inc. | Ohmic contacts to nitrogen polarity GaN |
ITTO20070099A1 (it) * | 2007-02-09 | 2008-08-10 | St Microelectronics Srl | Procedimento per la realizzazione di un'interfaccia tra carburo di silicio e ossido di silicio con bassa densita' di stati |
US7737476B2 (en) * | 2007-02-15 | 2010-06-15 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures |
US8212290B2 (en) * | 2007-03-23 | 2012-07-03 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
FR2914500B1 (fr) * | 2007-03-30 | 2009-11-20 | Picogiga Internat | Dispositif electronique a contact ohmique ameliore |
WO2008137724A1 (en) * | 2007-05-03 | 2008-11-13 | Dsm Solutions, Inc. | Strained channel p-type jfet and fabrication method thereof |
KR100898225B1 (ko) * | 2007-09-07 | 2009-05-18 | 주식회사 동부하이텍 | 반도체 소자 및 이의 제조방법 |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US7935620B2 (en) * | 2007-12-05 | 2011-05-03 | Freescale Semiconductor, Inc. | Method for forming semiconductor devices with low leakage Schottky contacts |
WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
US9024327B2 (en) | 2007-12-14 | 2015-05-05 | Cree, Inc. | Metallization structure for high power microelectronic devices |
JP2009176804A (ja) * | 2008-01-22 | 2009-08-06 | Nippon Steel Corp | 電力変換素子 |
US9711633B2 (en) * | 2008-05-09 | 2017-07-18 | Cree, Inc. | Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions |
CN101320601B (zh) * | 2008-06-18 | 2011-08-17 | 西北工业大学 | 碳化硅肖特基结式核电池及其制作方法 |
CN101740388B (zh) * | 2008-11-10 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | 金属半导体场效应晶体管的制造方法 |
WO2010082272A1 (ja) * | 2009-01-16 | 2010-07-22 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP5682556B2 (ja) * | 2009-10-05 | 2015-03-11 | 住友電気工業株式会社 | 半導体装置 |
JP2011119512A (ja) * | 2009-12-04 | 2011-06-16 | Denso Corp | 半導体装置およびその製造方法 |
US8936976B2 (en) * | 2009-12-23 | 2015-01-20 | Intel Corporation | Conductivity improvements for III-V semiconductor devices |
JP4985757B2 (ja) * | 2009-12-25 | 2012-07-25 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2011159714A (ja) * | 2010-01-29 | 2011-08-18 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
US8890277B2 (en) | 2010-03-15 | 2014-11-18 | University Of Florida Research Foundation Inc. | Graphite and/or graphene semiconductor devices |
CN101834206B (zh) * | 2010-04-12 | 2012-10-10 | 清华大学 | 半导体器件结构及其形成方法 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN102446861B (zh) * | 2010-10-11 | 2013-10-23 | 上海华虹Nec电子有限公司 | 利用选择性碳化硅外延来提升sonos擦写速度的方法 |
JP2012164790A (ja) * | 2011-02-07 | 2012-08-30 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
US10367089B2 (en) * | 2011-03-28 | 2019-07-30 | General Electric Company | Semiconductor device and method for reduced bias threshold instability |
CN102290434B (zh) * | 2011-09-01 | 2013-08-14 | 西安电子科技大学 | 带栅下缓冲层结构的金属半导体场效应晶体管及制作方法 |
WO2013035842A1 (ja) | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Ga2O3系半導体素子 |
EP2765610B1 (en) | 2011-09-08 | 2018-12-26 | Tamura Corporation | Ga2o3 semiconductor element |
US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
JP6178065B2 (ja) * | 2012-10-09 | 2017-08-09 | 株式会社東芝 | 半導体装置 |
TW201417149A (zh) * | 2012-10-31 | 2014-05-01 | Lg Innotek Co Ltd | 磊晶晶圓 |
CN102931272A (zh) * | 2012-11-23 | 2013-02-13 | 中国科学院微电子研究所 | 一种具有增益的紫外探测器结构及其制备方法 |
US9293627B1 (en) * | 2012-12-03 | 2016-03-22 | Sandia Corporation | Sub-wavelength antenna enhanced bilayer graphene tunable photodetector |
JP5803979B2 (ja) | 2013-05-29 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法 |
US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
JP6241915B2 (ja) * | 2013-07-31 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
JP6156241B2 (ja) * | 2014-04-11 | 2017-07-05 | 新日鐵住金株式会社 | 炭化ケイ素ショットキーバリアダイオード |
WO2016002386A1 (ja) * | 2014-07-02 | 2016-01-07 | 富士電機株式会社 | 炭化珪素半導体素子の製造方法 |
WO2016013471A1 (ja) * | 2014-07-23 | 2016-01-28 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2016031953A (ja) | 2014-07-25 | 2016-03-07 | 株式会社タムラ製作所 | 半導体素子及びその製造方法、半導体基板、並びに結晶積層構造体 |
JP6292104B2 (ja) * | 2014-11-17 | 2018-03-14 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
CN104900716B (zh) * | 2015-05-18 | 2018-07-20 | 杭州士兰集成电路有限公司 | 单向tvs器件结构及其制作方法 |
JP6873926B2 (ja) * | 2015-06-09 | 2021-05-19 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | 炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法 |
CN105161798B (zh) * | 2015-07-01 | 2017-12-26 | 东南大学 | 硅基低漏电流悬臂梁栅的开关电容滤波器及制备方法 |
CN105261642B (zh) * | 2015-08-21 | 2019-04-12 | 西安电子科技大学 | 异质结高电子迁移率自旋场效应晶体管及制造方法 |
CN105304705B (zh) * | 2015-08-21 | 2019-01-11 | 西安电子科技大学 | 异质结高电子迁移率自旋场效应晶体管及制造方法 |
CN105261641A (zh) * | 2015-08-21 | 2016-01-20 | 西安电子科技大学 | 异质结高电子迁移率自旋场效应晶体管及制造方法 |
CN105161531A (zh) * | 2015-08-26 | 2015-12-16 | 西安电子科技大学 | 4H-SiC金属半导体场效应晶体管及其制作方法 |
CN105336686B (zh) * | 2015-09-30 | 2019-10-25 | 中国电子科技集团公司第五十五研究所 | 一种复合结构SiC衬底器件的切割方法 |
JP6400618B2 (ja) * | 2016-03-09 | 2018-10-03 | 株式会社東芝 | 半導体装置 |
US10243039B2 (en) | 2016-03-22 | 2019-03-26 | General Electric Company | Super-junction semiconductor power devices with fast switching capability |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
US10002958B2 (en) * | 2016-06-08 | 2018-06-19 | The United States Of America, As Represented By The Secretary Of The Navy | Diamond on III-nitride device |
US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
JP2016197737A (ja) * | 2016-06-29 | 2016-11-24 | 株式会社タムラ製作所 | 半導体素子及びその製造方法、並びに結晶積層構造体 |
US10170627B2 (en) | 2016-11-18 | 2019-01-01 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
US10297557B2 (en) * | 2017-06-30 | 2019-05-21 | Sanken Electric Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
US10217831B1 (en) * | 2017-08-31 | 2019-02-26 | Vanguard International Semiconductor Corporation | High electron mobility transistor devices |
JP7009147B2 (ja) * | 2017-09-29 | 2022-01-25 | 富士電機株式会社 | 炭化珪素半導体基板、炭化珪素半導体基板の製造方法および炭化珪素半導体装置 |
CN108962418B (zh) * | 2018-02-08 | 2022-04-26 | 长安大学 | 一种Pm-147碳化硅缓变肖特基同位素电池及其制造方法 |
US10818659B2 (en) | 2018-10-16 | 2020-10-27 | Globalfoundries Inc. | FinFET having upper spacers adjacent gate and source/drain contacts |
US10580701B1 (en) | 2018-10-23 | 2020-03-03 | Globalfoundries Inc. | Methods of making a self-aligned gate contact structure and source/drain metallization structures on integrated circuit products |
CN113990549B (zh) * | 2021-10-09 | 2023-08-08 | 西安电子科技大学 | 具有减薄P型区的分布电极PiN型β辐照电池及制备方法 |
CN117712124B (zh) * | 2024-02-05 | 2024-04-26 | 中国科学院长春光学精密机械与物理研究所 | 一种基于4H-SiC衬底的高性能CMOS器件 |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US612680A (en) * | 1898-10-18 | House | ||
DE2324780C3 (de) * | 1973-05-16 | 1978-07-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen eines Halbleiterbauelements |
JPS6051213B2 (ja) | 1978-05-30 | 1985-11-13 | 株式会社フジクラ | 伸縮自在なテ−プ電線の製造装置 |
JPS59134874A (ja) * | 1983-01-21 | 1984-08-02 | Hitachi Ltd | 半導体装置の製造方法 |
JPS60142568A (ja) | 1983-12-29 | 1985-07-27 | Sharp Corp | 炭化珪素電界効果トランジスタの製造方法 |
US4762806A (en) | 1983-12-23 | 1988-08-09 | Sharp Kabushiki Kaisha | Process for producing a SiC semiconductor device |
US4737469A (en) | 1984-01-19 | 1988-04-12 | Honeywell Inc. | Controlled mode field effect transistors and method therefore |
JPS60154674A (ja) | 1984-01-25 | 1985-08-14 | Hitachi Ltd | 電子装置の製造方法 |
JPS60189250A (ja) | 1984-03-08 | 1985-09-26 | Fujitsu Ltd | 半導体装置 |
EP0181091B1 (en) | 1984-11-02 | 1990-06-13 | Kabushiki Kaisha Toshiba | Schottky gate field effect transistor and manufacturing method thereof |
JP2615390B2 (ja) | 1985-10-07 | 1997-05-28 | 工業技術院長 | 炭化シリコン電界効果トランジスタの製造方法 |
DE3685495D1 (de) | 1986-07-11 | 1992-07-02 | Ibm | Verfahren zur herstellung einer unteraetzten maskenkontur. |
US5229625A (en) | 1986-08-18 | 1993-07-20 | Sharp Kabushiki Kaisha | Schottky barrier gate type field effect transistor |
JPS6347983A (ja) | 1986-08-18 | 1988-02-29 | Sharp Corp | 炭化珪素電界効果トランジスタ |
JPS6459961A (en) | 1987-08-31 | 1989-03-07 | Toshiba Corp | Semiconductor device |
JPH0797659B2 (ja) | 1987-10-20 | 1995-10-18 | 三洋電機株式会社 | SiC青色発光ダイオード |
JPH0797660B2 (ja) | 1987-10-20 | 1995-10-18 | 三洋電機株式会社 | SiC青色発光ダイオード |
US4947218A (en) | 1987-11-03 | 1990-08-07 | North Carolina State University | P-N junction diodes in silicon carbide |
JPH0798684B2 (ja) | 1988-01-19 | 1995-10-25 | 日本碍子株式会社 | 高密度SiC焼結体の製造方法 |
JPH01196873A (ja) * | 1988-02-02 | 1989-08-08 | Sharp Corp | 炭化珪素半導体装置 |
JP2612040B2 (ja) | 1988-06-28 | 1997-05-21 | 株式会社豊田中央研究所 | β−SiCを用いたMOS・FET及びその製造方法 |
JP2815642B2 (ja) * | 1989-11-29 | 1998-10-27 | 沖電気工業株式会社 | 電界効果トランジスタ |
US5014108A (en) | 1990-05-15 | 1991-05-07 | Harris Corporation | MESFET for dielectrically isolated integrated circuits |
JPH04225534A (ja) | 1990-12-27 | 1992-08-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPH0547798A (ja) | 1991-01-31 | 1993-02-26 | Texas Instr Inc <Ti> | 抵抗性AlGaAsを有するGaAs FET |
US5289015A (en) | 1991-04-25 | 1994-02-22 | At&T Bell Laboratories | Planar fet-seed integrated circuits |
US5270554A (en) | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
US5264713A (en) * | 1991-06-14 | 1993-11-23 | Cree Research, Inc. | Junction field-effect transistor formed in silicon carbide |
US5925895A (en) | 1993-10-18 | 1999-07-20 | Northrop Grumman Corporation | Silicon carbide power MESFET with surface effect supressive layer |
US5510630A (en) * | 1993-10-18 | 1996-04-23 | Westinghouse Electric Corporation | Non-volatile random access memory cell constructed of silicon carbide |
US5611955A (en) * | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
US5396085A (en) | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
US5686737A (en) * | 1994-09-16 | 1997-11-11 | Cree Research, Inc. | Self-aligned field-effect transistor for high frequency applications |
SE9404452D0 (sv) | 1994-12-22 | 1994-12-22 | Abb Research Ltd | Semiconductor device having an insulated gate |
JPH08316164A (ja) * | 1995-05-17 | 1996-11-29 | Hitachi Ltd | 半導体素子の作成方法 |
JP3158973B2 (ja) * | 1995-07-20 | 2001-04-23 | 富士電機株式会社 | 炭化けい素縦型fet |
US5821576A (en) * | 1995-10-18 | 1998-10-13 | Northrop Grumman Corporation | Silicon carbide power field effect transistor |
US5972801A (en) | 1995-11-08 | 1999-10-26 | Cree Research, Inc. | Process for reducing defects in oxide layers on silicon carbide |
JP2728126B2 (ja) | 1995-12-25 | 1998-03-18 | 日本電気株式会社 | 電界効果トランジスタ |
JPH09260405A (ja) * | 1996-03-27 | 1997-10-03 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
US5719409A (en) * | 1996-06-06 | 1998-02-17 | Cree Research, Inc. | Silicon carbide metal-insulator semiconductor field effect transistor |
DE19644821C1 (de) | 1996-10-29 | 1998-02-12 | Daimler Benz Ag | Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften |
US5742082A (en) | 1996-11-22 | 1998-04-21 | Motorola, Inc. | Stable FET with shielding region in the substrate |
WO1998035389A1 (en) * | 1997-02-07 | 1998-08-13 | Northrop Grumman Corporation | Silicon carbide power mesfet |
US5891769A (en) | 1997-04-07 | 1999-04-06 | Motorola, Inc. | Method for forming a semiconductor device having a heteroepitaxial layer |
US6121633A (en) * | 1997-06-12 | 2000-09-19 | Cree Research, Inc. | Latch-up free power MOS-bipolar transistor |
JPH11135522A (ja) * | 1997-08-28 | 1999-05-21 | Nec Corp | 化合物半導体装置の製造方法 |
JPH11150124A (ja) | 1997-09-12 | 1999-06-02 | Toshiba Corp | 電界効果トランジスタおよびその製造方法 |
JP3216804B2 (ja) * | 1998-01-06 | 2001-10-09 | 富士電機株式会社 | 炭化けい素縦形fetの製造方法および炭化けい素縦形fet |
JP4120899B2 (ja) * | 1998-02-17 | 2008-07-16 | 富士通株式会社 | 化合物半導体電界効果トランジスタ及びその製造方法 |
US6107649A (en) * | 1998-06-10 | 2000-08-22 | Rutgers, The State University | Field-controlled high-power semiconductor devices |
US6316793B1 (en) * | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
JP2000012560A (ja) * | 1998-06-22 | 2000-01-14 | Furukawa Electric Co Ltd:The | メサ型化合物半導体電界効果トランジスタ及びその作製方法 |
US6246076B1 (en) * | 1998-08-28 | 2001-06-12 | Cree, Inc. | Layered dielectric on silicon carbide semiconductor structures |
US6646265B2 (en) * | 1999-02-08 | 2003-11-11 | General Electric Company | Optical spectrometer and method for combustion flame temperature determination |
US6218680B1 (en) * | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
AU1416601A (en) | 2000-03-03 | 2001-09-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
US6686616B1 (en) | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
US6458640B1 (en) | 2001-06-04 | 2002-10-01 | Anadigics, Inc. | GaAs MESFET having LDD and non-uniform P-well doping profiles |
US6906350B2 (en) * | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
US6956239B2 (en) * | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
-
2000
- 2000-05-10 US US09/567,717 patent/US6686616B1/en not_active Expired - Lifetime
-
2001
- 2001-02-07 TW TW090102637A patent/TW492198B/zh not_active IP Right Cessation
- 2001-02-15 AU AU2001238351A patent/AU2001238351A1/en not_active Abandoned
- 2001-02-15 JP JP2001582844A patent/JP5255743B2/ja not_active Expired - Lifetime
- 2001-02-15 KR KR1020027014260A patent/KR100726365B1/ko active IP Right Grant
- 2001-02-15 CN CNB018092594A patent/CN1286184C/zh not_active Expired - Lifetime
- 2001-02-15 CA CA002408582A patent/CA2408582A1/en not_active Abandoned
- 2001-02-15 EP EP01910781A patent/EP1285464A2/en not_active Withdrawn
- 2001-02-15 EP EP08160291A patent/EP1976020A3/en not_active Withdrawn
- 2001-02-15 WO PCT/US2001/004957 patent/WO2001086727A2/en active Application Filing
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2003
- 2003-11-12 US US10/706,641 patent/US7067361B2/en not_active Expired - Lifetime
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2012
- 2012-03-13 JP JP2012056444A patent/JP2012147005A/ja active Pending
Also Published As
Publication number | Publication date |
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EP1976020A3 (en) | 2010-08-04 |
AU2001238351A1 (en) | 2001-11-20 |
WO2001086727A3 (en) | 2002-03-21 |
KR20020092445A (ko) | 2002-12-11 |
JP2012147005A (ja) | 2012-08-02 |
EP1285464A2 (en) | 2003-02-26 |
US7067361B2 (en) | 2006-06-27 |
JP5255743B2 (ja) | 2013-08-07 |
US6686616B1 (en) | 2004-02-03 |
TW492198B (en) | 2002-06-21 |
EP1976020A2 (en) | 2008-10-01 |
CN1286184C (zh) | 2006-11-22 |
KR100726365B1 (ko) | 2007-06-11 |
WO2001086727A2 (en) | 2001-11-15 |
CN1441965A (zh) | 2003-09-10 |
US20040159865A1 (en) | 2004-08-19 |
JP2003533051A (ja) | 2003-11-05 |
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