AU2001241502A1 - Trench gate dmos field-effect transistor and method of making the same - Google Patents
Trench gate dmos field-effect transistor and method of making the sameInfo
- Publication number
- AU2001241502A1 AU2001241502A1 AU2001241502A AU4150201A AU2001241502A1 AU 2001241502 A1 AU2001241502 A1 AU 2001241502A1 AU 2001241502 A AU2001241502 A AU 2001241502A AU 4150201 A AU4150201 A AU 4150201A AU 2001241502 A1 AU2001241502 A1 AU 2001241502A1
- Authority
- AU
- Australia
- Prior art keywords
- making
- same
- effect transistor
- trench gate
- dmos field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/515,749 US6312993B1 (en) | 2000-02-29 | 2000-02-29 | High speed trench DMOS |
US09/515,749 | 2000-02-29 | ||
PCT/US2001/004869 WO2001065608A2 (en) | 2000-02-29 | 2001-02-15 | Trench gate dmos field-effect transistor and method of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001241502A1 true AU2001241502A1 (en) | 2001-09-12 |
Family
ID=24052591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001241502A Abandoned AU2001241502A1 (en) | 2000-02-29 | 2001-02-15 | Trench gate dmos field-effect transistor and method of making the same |
Country Status (8)
Country | Link |
---|---|
US (3) | US6312993B1 (de) |
EP (1) | EP1266407B1 (de) |
JP (1) | JP2004504711A (de) |
KR (1) | KR20030064270A (de) |
CN (1) | CN1288762C (de) |
AU (1) | AU2001241502A1 (de) |
TW (1) | TW508824B (de) |
WO (1) | WO2001065608A2 (de) |
Families Citing this family (52)
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TW543146B (en) * | 2001-03-09 | 2003-07-21 | Fairchild Semiconductor | Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
GB0117949D0 (en) * | 2001-07-24 | 2001-09-19 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices and their manufacture |
US6635544B2 (en) * | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
US6677205B2 (en) * | 2001-09-28 | 2004-01-13 | Infineon Technologies Ag | Integrated spacer for gate/source/drain isolation in a vertical array structure |
US6573560B2 (en) * | 2001-11-06 | 2003-06-03 | Fairchild Semiconductor Corporation | Trench MOSFET with reduced Miller capacitance |
US6674124B2 (en) * | 2001-11-15 | 2004-01-06 | General Semiconductor, Inc. | Trench MOSFET having low gate charge |
TW511297B (en) * | 2001-11-21 | 2002-11-21 | Mosel Vitelic Inc | Manufacture method of DMOS transistor |
US6781196B2 (en) * | 2002-03-11 | 2004-08-24 | General Semiconductor, Inc. | Trench DMOS transistor having improved trench structure |
US6861701B2 (en) * | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
JP2004342863A (ja) * | 2003-05-16 | 2004-12-02 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
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KR100607177B1 (ko) * | 2004-04-06 | 2006-08-01 | 삼성전자주식회사 | 비대칭 채널영역을 갖는 트랜지스터를 구비하는 반도체 소자 및 그 제조방법. |
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CN1226797C (zh) * | 1997-03-11 | 2005-11-09 | 松下电器产业株式会社 | 二次电池 |
KR100225411B1 (ko) * | 1997-03-24 | 1999-10-15 | 김덕중 | LDMOS(a lateral double-diffused MOS) 트랜지스터 소자 및 그의 제조 방법 |
JP3326366B2 (ja) * | 1997-08-08 | 2002-09-24 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
US6125149A (en) * | 1997-11-05 | 2000-09-26 | At&T Corp. | Successively refinable trellis coded quantization |
EP1050908B1 (de) * | 1998-01-22 | 2016-01-20 | Mitsubishi Denki Kabushiki Kaisha | Bipolare halbleiteranordnung mit isolierter gateelektrode |
KR100304717B1 (ko) * | 1998-08-18 | 2001-11-15 | 김덕중 | 트렌치형게이트를갖는반도체장치및그제조방법 |
US6461918B1 (en) * | 1999-12-20 | 2002-10-08 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
-
2000
- 2000-02-29 US US09/515,749 patent/US6312993B1/en not_active Expired - Lifetime
-
2001
- 2001-02-15 EP EP01912755A patent/EP1266407B1/de not_active Expired - Lifetime
- 2001-02-15 CN CNB018058094A patent/CN1288762C/zh not_active Expired - Fee Related
- 2001-02-15 AU AU2001241502A patent/AU2001241502A1/en not_active Abandoned
- 2001-02-15 JP JP2001564398A patent/JP2004504711A/ja active Pending
- 2001-02-15 KR KR1020027011241A patent/KR20030064270A/ko not_active Application Discontinuation
- 2001-02-15 WO PCT/US2001/004869 patent/WO2001065608A2/en active Application Filing
- 2001-02-20 TW TW090103824A patent/TW508824B/zh not_active IP Right Cessation
- 2001-06-15 US US09/882,117 patent/US6627951B2/en not_active Expired - Lifetime
-
2003
- 2003-09-29 US US10/673,887 patent/US6849899B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040072404A1 (en) | 2004-04-15 |
US6312993B1 (en) | 2001-11-06 |
CN1423840A (zh) | 2003-06-11 |
US6627951B2 (en) | 2003-09-30 |
US6849899B2 (en) | 2005-02-01 |
TW508824B (en) | 2002-11-01 |
EP1266407B1 (de) | 2011-07-13 |
EP1266407A2 (de) | 2002-12-18 |
CN1288762C (zh) | 2006-12-06 |
WO2001065608A2 (en) | 2001-09-07 |
US20010031551A1 (en) | 2001-10-18 |
WO2001065608A3 (en) | 2002-08-22 |
KR20030064270A (ko) | 2003-07-31 |
JP2004504711A (ja) | 2004-02-12 |
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