US6963505B2
(en)
*
|
2002-10-29 |
2005-11-08 |
Aifun Semiconductors Ltd. |
Method circuit and system for determining a reference voltage
|
US7237074B2
(en)
*
|
2003-06-13 |
2007-06-26 |
Sandisk Corporation |
Tracking cells for a memory system
|
US7266732B2
(en)
*
|
2003-12-22 |
2007-09-04 |
Samsung Electronics Co., Ltd. |
MRAM with controller
|
US7355237B2
(en)
*
|
2004-02-13 |
2008-04-08 |
Sandisk Corporation |
Shield plate for limiting cross coupling between floating gates
|
US7023733B2
(en)
*
|
2004-05-05 |
2006-04-04 |
Sandisk Corporation |
Boosting to control programming of non-volatile memory
|
DE102005020808B3
(de)
*
|
2005-05-04 |
2006-07-20 |
Micronas Gmbh |
Nichtflüchtige Speichereinrichtung mit einer Programmier- und Löschkontrolle
|
US7023737B1
(en)
*
|
2005-08-01 |
2006-04-04 |
Sandisk Corporation |
System for programming non-volatile memory with self-adjusting maximum program loop
|
US7230854B2
(en)
*
|
2005-08-01 |
2007-06-12 |
Sandisk Corporation |
Method for programming non-volatile memory with self-adjusting maximum program loop
|
US7301817B2
(en)
*
|
2005-10-27 |
2007-11-27 |
Sandisk Corporation |
Method for programming of multi-state non-volatile memory using smart verify
|
US7366022B2
(en)
*
|
2005-10-27 |
2008-04-29 |
Sandisk Corporation |
Apparatus for programming of multi-state non-volatile memory using smart verify
|
JP4960378B2
(ja)
|
2005-12-06 |
2012-06-27 |
サンディスク コーポレイション |
不揮発性メモリの読み出し外乱を低減する方法
|
US7355889B2
(en)
*
|
2005-12-19 |
2008-04-08 |
Sandisk Corporation |
Method for programming non-volatile memory with reduced program disturb using modified pass voltages
|
US7355888B2
(en)
*
|
2005-12-19 |
2008-04-08 |
Sandisk Corporation |
Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
|
US7365018B2
(en)
*
|
2005-12-28 |
2008-04-29 |
Sandisk Corporation |
Fabrication of semiconductor device for flash memory with increased select gate width
|
US7395466B2
(en)
*
|
2005-12-30 |
2008-07-01 |
Intel Corporation |
Method and apparatus to adjust voltage for storage location reliability
|
US7609561B2
(en)
*
|
2006-01-18 |
2009-10-27 |
Apple Inc. |
Disabling faulty flash memory dies
|
US7793059B2
(en)
*
|
2006-01-18 |
2010-09-07 |
Apple Inc. |
Interleaving policies for flash memory
|
US7752391B2
(en)
*
|
2006-01-20 |
2010-07-06 |
Apple Inc. |
Variable caching policy system and method
|
US20070174641A1
(en)
*
|
2006-01-25 |
2007-07-26 |
Cornwell Michael J |
Adjusting power supplies for data storage devices
|
US7702935B2
(en)
*
|
2006-01-25 |
2010-04-20 |
Apple Inc. |
Reporting flash memory operating voltages
|
US7912994B2
(en)
*
|
2006-01-27 |
2011-03-22 |
Apple Inc. |
Reducing connection time for mass storage class peripheral by internally prefetching file data into local cache in response to connection to host
|
US7861122B2
(en)
*
|
2006-01-27 |
2010-12-28 |
Apple Inc. |
Monitoring health of non-volatile memory
|
US7594043B2
(en)
*
|
2006-01-27 |
2009-09-22 |
Apple Inc. |
Reducing dismount time for mass storage class devices
|
EP1991989B1
(de)
|
2006-03-03 |
2011-01-05 |
Sandisk Corporation |
Leseoperation für nichtflüchtige speicherung mit floating-gate-kopplungskompensation
|
US7849302B2
(en)
*
|
2006-04-10 |
2010-12-07 |
Apple Inc. |
Direct boot arrangement using a NAND flash memory
|
WO2007126665A1
(en)
|
2006-04-12 |
2007-11-08 |
Sandisk Corporation |
Reducing the impact of program disturb during read
|
US7511646B2
(en)
*
|
2006-05-15 |
2009-03-31 |
Apple Inc. |
Use of 8-bit or higher A/D for NAND cell value
|
US7551486B2
(en)
*
|
2006-05-15 |
2009-06-23 |
Apple Inc. |
Iterative memory cell charging based on reference cell value
|
US7852690B2
(en)
*
|
2006-05-15 |
2010-12-14 |
Apple Inc. |
Multi-chip package for a flash memory
|
US8000134B2
(en)
|
2006-05-15 |
2011-08-16 |
Apple Inc. |
Off-die charge pump that supplies multiple flash devices
|
US7911834B2
(en)
*
|
2006-05-15 |
2011-03-22 |
Apple Inc. |
Analog interface for a flash memory die
|
US7701797B2
(en)
*
|
2006-05-15 |
2010-04-20 |
Apple Inc. |
Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
|
US7568135B2
(en)
*
|
2006-05-15 |
2009-07-28 |
Apple Inc. |
Use of alternative value in cell detection
|
US7639531B2
(en)
*
|
2006-05-15 |
2009-12-29 |
Apple Inc. |
Dynamic cell bit resolution
|
US7613043B2
(en)
*
|
2006-05-15 |
2009-11-03 |
Apple Inc. |
Shifting reference values to account for voltage sag
|
US7639542B2
(en)
*
|
2006-05-15 |
2009-12-29 |
Apple Inc. |
Maintenance operations for multi-level data storage cells
|
WO2008097320A2
(en)
*
|
2006-06-01 |
2008-08-14 |
Virginia Tech Intellectual Properties, Inc. |
Premixing injector for gas turbine engines
|
US7342831B2
(en)
*
|
2006-06-16 |
2008-03-11 |
Sandisk Corporation |
System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
|
US7391650B2
(en)
*
|
2006-06-16 |
2008-06-24 |
Sandisk Corporation |
Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
|
US7349261B2
(en)
*
|
2006-06-19 |
2008-03-25 |
Sandisk Corporation |
Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
|
US7492633B2
(en)
*
|
2006-06-19 |
2009-02-17 |
Sandisk Corporation |
System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
|
US7489549B2
(en)
*
|
2006-06-22 |
2009-02-10 |
Sandisk Corporation |
System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US7486561B2
(en)
*
|
2006-06-22 |
2009-02-03 |
Sandisk Corporation |
Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US20070297247A1
(en)
*
|
2006-06-26 |
2007-12-27 |
Gerrit Jan Hemink |
Method for programming non-volatile memory using variable amplitude programming pulses
|
US7355892B2
(en)
*
|
2006-06-30 |
2008-04-08 |
Sandisk Corporation |
Partial page fail bit detection in flash memory devices
|
US7304893B1
(en)
|
2006-06-30 |
2007-12-04 |
Sandisk Corporation |
Method of partial page fail bit detection in flash memory devices
|
US7885119B2
(en)
|
2006-07-20 |
2011-02-08 |
Sandisk Corporation |
Compensating for coupling during programming
|
US7894269B2
(en)
*
|
2006-07-20 |
2011-02-22 |
Sandisk Corporation |
Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
|
US7716415B2
(en)
*
|
2006-08-01 |
2010-05-11 |
Sandisk Il Ltd. |
Method of avoiding errors in flash memory
|
US7440326B2
(en)
|
2006-09-06 |
2008-10-21 |
Sandisk Corporation |
Programming non-volatile memory with improved boosting
|
US7885112B2
(en)
*
|
2007-09-07 |
2011-02-08 |
Sandisk Corporation |
Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
|
US8001314B2
(en)
|
2006-09-12 |
2011-08-16 |
Apple Inc. |
Storing a driver for controlling a memory
|
US7977186B2
(en)
*
|
2006-09-28 |
2011-07-12 |
Sandisk Corporation |
Providing local boosting control implant for non-volatile memory
|
US7705387B2
(en)
*
|
2006-09-28 |
2010-04-27 |
Sandisk Corporation |
Non-volatile memory with local boosting control implant
|
JP2008090451A
(ja)
|
2006-09-29 |
2008-04-17 |
Toshiba Corp |
記憶装置
|
US7691710B2
(en)
*
|
2006-10-17 |
2010-04-06 |
Sandisk Corporation |
Fabricating non-volatile memory with dual voltage select gate structure
|
US7616490B2
(en)
*
|
2006-10-17 |
2009-11-10 |
Sandisk Corporation |
Programming non-volatile memory with dual voltage select gate structure
|
US7586157B2
(en)
*
|
2006-10-17 |
2009-09-08 |
Sandisk Corporation |
Non-volatile memory with dual voltage select gate structure
|
US7596031B2
(en)
|
2006-10-30 |
2009-09-29 |
Sandisk Corporation |
Faster programming of highest multi-level state for non-volatile memory
|
US7440323B2
(en)
*
|
2006-11-02 |
2008-10-21 |
Sandisk Corporation |
Reducing program disturb in non-volatile memory using multiple boosting modes
|
US7468911B2
(en)
*
|
2006-11-02 |
2008-12-23 |
Sandisk Corporation |
Non-volatile memory using multiple boosting modes for reduced program disturb
|
US20080108358A1
(en)
*
|
2006-11-08 |
2008-05-08 |
Motorola, Inc. |
Interference mitigation and recovery
|
US7508710B2
(en)
*
|
2006-11-13 |
2009-03-24 |
Sandisk Corporation |
Operating non-volatile memory with boost structures
|
US7696035B2
(en)
*
|
2006-11-13 |
2010-04-13 |
Sandisk Corporation |
Method for fabricating non-volatile memory with boost structures
|
US7508703B2
(en)
*
|
2006-11-13 |
2009-03-24 |
Sandisk Corporation |
Non-volatile memory with boost structures
|
US7623387B2
(en)
*
|
2006-12-12 |
2009-11-24 |
Sandisk Corporation |
Non-volatile storage with early source-side boosting for reducing program disturb
|
US7623386B2
(en)
*
|
2006-12-12 |
2009-11-24 |
Sandisk Corporation |
Reducing program disturb in non-volatile storage using early source-side boosting
|
US7570520B2
(en)
*
|
2006-12-27 |
2009-08-04 |
Sandisk Corporation |
Non-volatile storage system with initial programming voltage based on trial
|
US7551482B2
(en)
*
|
2006-12-27 |
2009-06-23 |
Sandisk Corporation |
Method for programming with initial programming voltage based on trial
|
US7554853B2
(en)
*
|
2006-12-30 |
2009-06-30 |
Sandisk Corporation |
Non-volatile storage with bias based on selective word line
|
US7583535B2
(en)
*
|
2006-12-30 |
2009-09-01 |
Sandisk Corporation |
Biasing non-volatile storage to compensate for temperature variations
|
US7583539B2
(en)
*
|
2006-12-30 |
2009-09-01 |
Sandisk Corporation |
Non-volatile storage with bias for temperature compensation
|
US7468920B2
(en)
*
|
2006-12-30 |
2008-12-23 |
Sandisk Corporation |
Applying adaptive body bias to non-volatile storage
|
US7525843B2
(en)
*
|
2006-12-30 |
2009-04-28 |
Sandisk Corporation |
Non-volatile storage with adaptive body bias
|
US7468919B2
(en)
*
|
2006-12-30 |
2008-12-23 |
Sandisk Corporation |
Biasing non-volatile storage based on selected word line
|
US7984360B2
(en)
*
|
2006-12-31 |
2011-07-19 |
Ramot At Tel Aviv University Ltd. |
Avoiding errors in a flash memory by using substitution transformations
|
US7679965B2
(en)
*
|
2007-01-31 |
2010-03-16 |
Sandisk Il Ltd |
Flash memory with improved programming precision
|
WO2008103586A1
(en)
|
2007-02-20 |
2008-08-28 |
Sandisk Corporation |
Dynamic verify based on threshold voltage distribution
|
US7814304B2
(en)
*
|
2007-03-14 |
2010-10-12 |
Apple Inc. |
Switching drivers between processors
|
US7613051B2
(en)
|
2007-03-14 |
2009-11-03 |
Apple Inc. |
Interleaving charge pumps for programmable memories
|
US7904793B2
(en)
*
|
2007-03-29 |
2011-03-08 |
Sandisk Corporation |
Method for decoding data in non-volatile storage using reliability metrics based on multiple reads
|
US7797480B2
(en)
*
|
2007-03-29 |
2010-09-14 |
Sandisk Corporation |
Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics
|
US7532516B2
(en)
*
|
2007-04-05 |
2009-05-12 |
Sandisk Corporation |
Non-volatile storage with current sensing of negative threshold voltages
|
US7606076B2
(en)
*
|
2007-04-05 |
2009-10-20 |
Sandisk Corporation |
Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
|
US7606072B2
(en)
*
|
2007-04-24 |
2009-10-20 |
Sandisk Corporation |
Non-volatile storage with compensation for source voltage drop
|
US7606071B2
(en)
*
|
2007-04-24 |
2009-10-20 |
Sandisk Corporation |
Compensating source voltage drop in non-volatile storage
|
US7440327B1
(en)
|
2007-04-25 |
2008-10-21 |
Sandisk Corporation |
Non-volatile storage with reduced power consumption during read operations
|
US20080288712A1
(en)
|
2007-04-25 |
2008-11-20 |
Cornwell Michael J |
Accessing metadata with an external host
|
US7996599B2
(en)
|
2007-04-25 |
2011-08-09 |
Apple Inc. |
Command resequencing in memory operations
|
US7606079B2
(en)
*
|
2007-04-25 |
2009-10-20 |
Sandisk Corporation |
Reducing power consumption during read operations in non-volatile storage
|
US7913032B1
(en)
|
2007-04-25 |
2011-03-22 |
Apple Inc. |
Initiating memory wear leveling
|
US7870327B1
(en)
|
2007-04-25 |
2011-01-11 |
Apple Inc. |
Controlling memory operations using a driver and flash memory type tables
|
US7869277B1
(en)
|
2007-04-25 |
2011-01-11 |
Apple Inc. |
Managing data writing to memories
|
US7577036B2
(en)
*
|
2007-05-02 |
2009-08-18 |
Micron Technology, Inc. |
Non-volatile multilevel memory cells with data read of reference cells
|
US7460404B1
(en)
*
|
2007-05-07 |
2008-12-02 |
Sandisk Corporation |
Boosting for non-volatile storage using channel isolation switching
|
US7463522B2
(en)
*
|
2007-05-07 |
2008-12-09 |
Sandisk Corporation |
Non-volatile storage with boosting using channel isolation switching
|
US7577026B2
(en)
*
|
2007-05-07 |
2009-08-18 |
Sandisk Corporation |
Source and drain side early boosting using local self boosting for non-volatile storage
|
US20080282024A1
(en)
*
|
2007-05-09 |
2008-11-13 |
Sudeep Biswas |
Management of erase operations in storage devices based on flash memories
|
US7882301B2
(en)
*
|
2007-05-09 |
2011-02-01 |
Stmicroelectronics S.R.L. |
Wear leveling in storage devices based on flash memories and related circuit, system, and method
|
US7991942B2
(en)
|
2007-05-09 |
2011-08-02 |
Stmicroelectronics S.R.L. |
Memory block compaction method, circuit, and system in storage devices based on flash memories
|
US8041883B2
(en)
*
|
2007-05-09 |
2011-10-18 |
Stmicroelectronics S.R.L. |
Restoring storage devices based on flash memories and related circuit, system, and method
|
US8073648B2
(en)
|
2007-05-14 |
2011-12-06 |
Sandisk Il Ltd. |
Measuring threshold voltage distribution in memory using an aggregate characteristic
|
US7545678B2
(en)
*
|
2007-06-29 |
2009-06-09 |
Sandisk Corporation |
Non-volatile storage with source bias all bit line sensing
|
US7471567B1
(en)
|
2007-06-29 |
2008-12-30 |
Sandisk Corporation |
Method for source bias all bit line sensing in non-volatile storage
|
US7969788B2
(en)
|
2007-08-21 |
2011-06-28 |
Micron Technology, Inc. |
Charge loss compensation methods and apparatus
|
US7869273B2
(en)
|
2007-09-04 |
2011-01-11 |
Sandisk Corporation |
Reducing the impact of interference during programming
|
US7672163B2
(en)
|
2007-09-14 |
2010-03-02 |
Sandisk Corporation |
Control gate line architecture
|
US7652929B2
(en)
*
|
2007-09-17 |
2010-01-26 |
Sandisk Corporation |
Non-volatile memory and method for biasing adjacent word line for verify during programming
|
US7577034B2
(en)
*
|
2007-09-26 |
2009-08-18 |
Sandisk Corporation |
Reducing programming voltage differential nonlinearity in non-volatile storage
|
US7978520B2
(en)
|
2007-09-27 |
2011-07-12 |
Sandisk Corporation |
Compensation of non-volatile memory chip non-idealities by program pulse adjustment
|
US7894263B2
(en)
*
|
2007-09-28 |
2011-02-22 |
Sandisk Corporation |
High voltage generation and control in source-side injection programming of non-volatile memory
|
US7613045B2
(en)
*
|
2007-11-26 |
2009-11-03 |
Sandisk Il, Ltd. |
Operation sequence and commands for measuring threshold voltage distribution in memory
|
US7768839B2
(en)
*
|
2007-11-27 |
2010-08-03 |
Micron Technology, Inc. |
Memory read methods, apparatus, and systems
|
US7688638B2
(en)
*
|
2007-12-07 |
2010-03-30 |
Sandisk Corporation |
Faster programming of multi-level non-volatile storage through reduced verify operations
|
KR101498669B1
(ko)
*
|
2007-12-20 |
2015-03-19 |
삼성전자주식회사 |
반도체 메모리 시스템 및 그것의 액세스 방법
|
US7915664B2
(en)
*
|
2008-04-17 |
2011-03-29 |
Sandisk Corporation |
Non-volatile memory with sidewall channels and raised source/drain regions
|
US7808819B2
(en)
*
|
2008-04-29 |
2010-10-05 |
Sandisk Il Ltd. |
Method for adaptive setting of state voltage levels in non-volatile memory
|
US7808836B2
(en)
*
|
2008-04-29 |
2010-10-05 |
Sandisk Il Ltd. |
Non-volatile memory with adaptive setting of state voltage levels
|
US8051240B2
(en)
*
|
2008-05-09 |
2011-11-01 |
Sandisk Technologies Inc. |
Compensating non-volatile storage using different pass voltages during program-verify and read
|
US7719902B2
(en)
*
|
2008-05-23 |
2010-05-18 |
Sandisk Corporation |
Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
|
US7952928B2
(en)
*
|
2008-05-27 |
2011-05-31 |
Sandisk Il Ltd. |
Increasing read throughput in non-volatile memory
|
JP2009294869A
(ja)
*
|
2008-06-04 |
2009-12-17 |
Toshiba Corp |
メモリシステム
|
US7800956B2
(en)
*
|
2008-06-27 |
2010-09-21 |
Sandisk Corporation |
Programming algorithm to reduce disturb with minimal extra time penalty
|
US8458536B2
(en)
*
|
2008-07-17 |
2013-06-04 |
Marvell World Trade Ltd. |
Data recovery in solid state memory devices
|
US7755946B2
(en)
*
|
2008-09-19 |
2010-07-13 |
Sandisk Corporation |
Data state-based temperature compensation during sensing in non-volatile memory
|
EP2335245B1
(de)
*
|
2008-09-28 |
2015-01-07 |
Ramot at Tel-Aviv University Ltd. |
Verfahren und system zur adaptiven codierung in flash-speichern
|
US8671327B2
(en)
|
2008-09-28 |
2014-03-11 |
Sandisk Technologies Inc. |
Method and system for adaptive coding in flash memories
|
US7974133B2
(en)
|
2009-01-06 |
2011-07-05 |
Sandisk Technologies Inc. |
Robust sensing circuit and method
|
US8026544B2
(en)
|
2009-03-30 |
2011-09-27 |
Sandisk Technologies Inc. |
Fabricating and operating a memory array having a multi-level cell region and a single-level cell region
|
US8199576B2
(en)
*
|
2009-04-08 |
2012-06-12 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
|
US8351236B2
(en)
|
2009-04-08 |
2013-01-08 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
|
US7983065B2
(en)
|
2009-04-08 |
2011-07-19 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
|
US8572443B2
(en)
*
|
2009-04-08 |
2013-10-29 |
International Business Machines Corporation |
System, method, and computer program product for determining a retention behavior for at least one block of a memory device having finite endurance and/or retention
|
JP2012523648A
(ja)
|
2009-04-08 |
2012-10-04 |
サンディスク スリーディー,エルエルシー |
垂直ビット線および二重グローバルビット線アーキテクチャを有する再プログラミング可能な不揮発性メモリ素子の3次元アレイ
|
US7907449B2
(en)
|
2009-04-09 |
2011-03-15 |
Sandisk Corporation |
Two pass erase for non-volatile storage
|
US8054691B2
(en)
|
2009-06-26 |
2011-11-08 |
Sandisk Technologies Inc. |
Detecting the completion of programming for non-volatile storage
|
US8995197B1
(en)
*
|
2009-08-26 |
2015-03-31 |
Densbits Technologies Ltd. |
System and methods for dynamic erase and program control for flash memory device memories
|
US8400854B2
(en)
*
|
2009-09-11 |
2013-03-19 |
Sandisk Technologies Inc. |
Identifying at-risk data in non-volatile storage
|
US8174895B2
(en)
|
2009-12-15 |
2012-05-08 |
Sandisk Technologies Inc. |
Programming non-volatile storage with fast bit detection and verify skip
|
US8213255B2
(en)
|
2010-02-19 |
2012-07-03 |
Sandisk Technologies Inc. |
Non-volatile storage with temperature compensation based on neighbor state information
|
US9245653B2
(en)
|
2010-03-15 |
2016-01-26 |
Intelligent Intellectual Property Holdings 2 Llc |
Reduced level cell mode for non-volatile memory
|
US8279693B2
(en)
*
|
2010-04-09 |
2012-10-02 |
Qualcomm Incorporated |
Programmable tracking circuit for tracking semiconductor memory read current
|
US8218366B2
(en)
|
2010-04-18 |
2012-07-10 |
Sandisk Technologies Inc. |
Programming non-volatile storage including reducing impact from other memory cells
|
US8546214B2
(en)
|
2010-04-22 |
2013-10-01 |
Sandisk Technologies Inc. |
P-type control gate in non-volatile storage and methods for forming same
|
US8274831B2
(en)
|
2010-05-24 |
2012-09-25 |
Sandisk Technologies Inc. |
Programming non-volatile storage with synchronized coupling
|
US8526237B2
(en)
|
2010-06-08 |
2013-09-03 |
Sandisk 3D Llc |
Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
|
US20110297912A1
(en)
|
2010-06-08 |
2011-12-08 |
George Samachisa |
Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
|
US9170933B2
(en)
|
2010-06-28 |
2015-10-27 |
International Business Machines Corporation |
Wear-level of cells/pages/sub-pages/blocks of a memory
|
US8369156B2
(en)
|
2010-07-13 |
2013-02-05 |
Sandisk Technologies Inc. |
Fast random access to non-volatile storage
|
KR101806807B1
(ko)
*
|
2010-11-08 |
2017-12-11 |
삼성전자주식회사 |
메모리 카드
|
US8837216B2
(en)
|
2010-12-13 |
2014-09-16 |
Sandisk Technologies Inc. |
Non-volatile storage system with shared bit lines connected to a single selection device
|
US9227456B2
(en)
|
2010-12-14 |
2016-01-05 |
Sandisk 3D Llc |
Memories with cylindrical read/write stacks
|
US8625322B2
(en)
|
2010-12-14 |
2014-01-07 |
Sandisk 3D Llc |
Non-volatile memory having 3D array of read/write elements with low current structures and methods thereof
|
KR20140043711A
(ko)
|
2010-12-14 |
2014-04-10 |
쌘디스크 3디 엘엘씨 |
선택 디바이스들의 이중 층을 갖는 삼차원 비휘발성 저장
|
KR101772951B1
(ko)
|
2011-03-10 |
2017-09-13 |
삼성전자주식회사 |
불 휘발성 메모리 장치 및 그것의 읽기 방법
|
US8667244B2
(en)
|
2011-03-21 |
2014-03-04 |
Hewlett-Packard Development Company, L.P. |
Methods, systems, and apparatus to prevent memory imprinting
|
KR20120122142A
(ko)
*
|
2011-04-28 |
2012-11-07 |
에스케이하이닉스 주식회사 |
비휘발성 메모리 장치 및 검증 방법
|
US8843693B2
(en)
|
2011-05-17 |
2014-09-23 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with improved data scrambling
|
US8456911B2
(en)
|
2011-06-07 |
2013-06-04 |
Sandisk Technologies Inc. |
Intelligent shifting of read pass voltages for non-volatile storage
|
US8638606B2
(en)
|
2011-09-16 |
2014-01-28 |
Sandisk Technologies Inc. |
Substrate bias during program of non-volatile storage
|
WO2013043602A2
(en)
|
2011-09-19 |
2013-03-28 |
SanDisk Technologies, Inc. |
High endurance non-volatile storage
|
US8406053B1
(en)
|
2011-09-21 |
2013-03-26 |
Sandisk Technologies Inc. |
On chip dynamic read for non-volatile storage
|
US8917554B2
(en)
|
2011-10-26 |
2014-12-23 |
Sandisk Technologies Inc. |
Back-biasing word line switch transistors
|
US9076544B2
(en)
|
2011-11-18 |
2015-07-07 |
Sandisk Technologies Inc. |
Operation for non-volatile storage system with shared bit lines
|
WO2013074528A1
(en)
|
2011-11-18 |
2013-05-23 |
SanDisk Technologies, Inc. |
Non-volatile storage with broken word line screen and data recovery
|
KR101882853B1
(ko)
*
|
2011-12-21 |
2018-08-27 |
에스케이하이닉스 주식회사 |
반도체 메모리 장치 및 그 동작 방법
|
US8797805B2
(en)
|
2011-12-22 |
2014-08-05 |
Micron Technology, Inc. |
Methods and apparatuses for determining threshold voltage shift
|
US8885404B2
(en)
|
2011-12-24 |
2014-11-11 |
Sandisk Technologies Inc. |
Non-volatile storage system with three layer floating gate
|
US8634239B2
(en)
|
2011-12-28 |
2014-01-21 |
Sandisk Technologies Inc. |
Hybrid multi-level cell programming sequences
|
US9269425B2
(en)
|
2011-12-30 |
2016-02-23 |
Sandisk 3D Llc |
Low forming voltage non-volatile storage device
|
US8582381B2
(en)
|
2012-02-23 |
2013-11-12 |
SanDisk Technologies, Inc. |
Temperature based compensation during verify operations for non-volatile storage
|
US8937835B2
(en)
|
2012-03-13 |
2015-01-20 |
Sandisk Technologies Inc. |
Non-volatile storage with read process that reduces disturb
|
US8902659B2
(en)
|
2012-03-26 |
2014-12-02 |
SanDisk Technologies, Inc. |
Shared-bit-line bit line setup scheme
|
US8804430B2
(en)
|
2012-03-26 |
2014-08-12 |
Sandisk Technologies Inc. |
Selected word line dependent select gate diffusion region voltage during programming
|
US8638608B2
(en)
|
2012-03-26 |
2014-01-28 |
Sandisk Technologies Inc. |
Selected word line dependent select gate voltage during program
|
US8804425B2
(en)
|
2012-03-26 |
2014-08-12 |
Sandisk Technologies Inc. |
Selected word line dependent programming voltage
|
US8937837B2
(en)
|
2012-05-08 |
2015-01-20 |
Sandisk Technologies Inc. |
Bit line BL isolation scheme during erase operation for non-volatile storage
|
US9171584B2
(en)
|
2012-05-15 |
2015-10-27 |
Sandisk 3D Llc |
Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines
|
US9281029B2
(en)
|
2012-06-15 |
2016-03-08 |
Sandisk 3D Llc |
Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof
|
US20130336037A1
(en)
|
2012-06-15 |
2013-12-19 |
Sandisk 3D Llc |
3d memory having vertical switches with surround gates and method thereof
|
US9142305B2
(en)
|
2012-06-28 |
2015-09-22 |
Sandisk Technologies Inc. |
System to reduce stress on word line select transistor during erase operation
|
US9053819B2
(en)
|
2012-07-11 |
2015-06-09 |
Sandisk Technologies Inc. |
Programming method to tighten threshold voltage width with avoiding program disturb
|
US9036417B2
(en)
|
2012-09-06 |
2015-05-19 |
Sandisk Technologies Inc. |
On chip dynamic read level scan and error detection for nonvolatile storage
|
US20140071761A1
(en)
|
2012-09-10 |
2014-03-13 |
Sandisk Technologies Inc. |
Non-volatile storage with joint hard bit and soft bit reading
|
US20140108705A1
(en)
|
2012-10-12 |
2014-04-17 |
Sandisk Technologies Inc. |
Use of High Endurance Non-Volatile Memory for Read Acceleration
|
US9159406B2
(en)
|
2012-11-02 |
2015-10-13 |
Sandisk Technologies Inc. |
Single-level cell endurance improvement with pre-defined blocks
|
US9087601B2
(en)
|
2012-12-06 |
2015-07-21 |
Sandisk Technologies Inc. |
Select gate bias during program of non-volatile storage
|
US9076545B2
(en)
|
2013-01-17 |
2015-07-07 |
Sandisk Tecnologies Inc. |
Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
|
US9026757B2
(en)
|
2013-01-25 |
2015-05-05 |
Sandisk Technologies Inc. |
Non-volatile memory programming data preservation
|
US8913428B2
(en)
|
2013-01-25 |
2014-12-16 |
Sandisk Technologies Inc. |
Programming non-volatile storage system with multiple memory die
|
US8885416B2
(en)
|
2013-01-30 |
2014-11-11 |
Sandisk Technologies Inc. |
Bit line current trip point modulation for reading nonvolatile storage elements
|
US8971128B2
(en)
|
2013-01-31 |
2015-03-03 |
Sandisk Technologies Inc. |
Adaptive initial program voltage for non-volatile memory
|
US9411722B2
(en)
|
2013-03-04 |
2016-08-09 |
Sandisk Technologies Llc |
Asynchronous FIFO buffer for memory access
|
US9202694B2
(en)
|
2013-03-04 |
2015-12-01 |
Sandisk 3D Llc |
Vertical bit line non-volatile memory systems and methods of fabrication
|
US9064547B2
(en)
|
2013-03-05 |
2015-06-23 |
Sandisk 3D Llc |
3D non-volatile memory having low-current cells and methods
|
US9165933B2
(en)
|
2013-03-07 |
2015-10-20 |
Sandisk 3D Llc |
Vertical bit line TFT decoder for high voltage operation
|
US9349452B2
(en)
|
2013-03-07 |
2016-05-24 |
Sandisk Technologies Inc. |
Hybrid non-volatile memory cells for shared bit line
|
US9165656B2
(en)
|
2013-03-11 |
2015-10-20 |
Sandisk Technologies Inc. |
Non-volatile storage with shared bit lines and flat memory cells
|
US8879331B2
(en)
|
2013-03-12 |
2014-11-04 |
Sandisk Technologies Inc. |
Shared bit line string architecture
|
US8990668B2
(en)
*
|
2013-03-14 |
2015-03-24 |
Western Digital Technologies, Inc. |
Decoding data stored in solid-state memory
|
US8988947B2
(en)
|
2013-03-25 |
2015-03-24 |
Sandisk Technologies Inc. |
Back bias during program verify of non-volatile storage
|
US9105468B2
(en)
|
2013-09-06 |
2015-08-11 |
Sandisk 3D Llc |
Vertical bit line wide band gap TFT decoder
|
US9424179B2
(en)
|
2013-10-17 |
2016-08-23 |
Seagate Technology Llc |
Systems and methods for latency based data recycling in a solid state memory system
|
US9123414B2
(en)
|
2013-11-22 |
2015-09-01 |
Micron Technology, Inc. |
Memory systems and memory programming methods
|
US9336875B2
(en)
|
2013-12-16 |
2016-05-10 |
Micron Technology, Inc. |
Memory systems and memory programming methods
|
US9129701B2
(en)
|
2013-12-19 |
2015-09-08 |
Sandisk Technologies Inc. |
Asymmetric state detection for non-volatile storage
|
US9362338B2
(en)
|
2014-03-03 |
2016-06-07 |
Sandisk Technologies Inc. |
Vertical thin film transistors in non-volatile storage systems
|
US9379246B2
(en)
|
2014-03-05 |
2016-06-28 |
Sandisk Technologies Inc. |
Vertical thin film transistor selection devices and methods of fabrication
|
US9123392B1
(en)
|
2014-03-28 |
2015-09-01 |
Sandisk 3D Llc |
Non-volatile 3D memory with cell-selectable word line decoding
|
US9627009B2
(en)
|
2014-07-25 |
2017-04-18 |
Sandisk Technologies Llc |
Interleaved grouped word lines for three dimensional non-volatile storage
|
KR102238592B1
(ko)
|
2014-08-08 |
2021-04-09 |
삼성전자주식회사 |
비휘발성 메모리 장치의 디폴트 독출 전압 설정 방법 및 비휘발성 메모리 장치의 데이터 독출 방법
|
US9983828B2
(en)
|
2014-10-09 |
2018-05-29 |
Sandisk Technologies Llc |
Health indicator of a storage device
|
US9443606B2
(en)
|
2014-10-28 |
2016-09-13 |
Sandisk Technologies Llc |
Word line dependent two strobe sensing mode for nonvolatile storage elements
|
US20160118135A1
(en)
|
2014-10-28 |
2016-04-28 |
Sandisk Technologies Inc. |
Two-strobe sensing for nonvolatile storage
|
US9251891B1
(en)
*
|
2014-11-11 |
2016-02-02 |
Sandisk Technologies Inc. |
Devices and methods to conditionally send parameter values to non-volatile memory
|
US9947682B2
(en)
|
2014-11-18 |
2018-04-17 |
Sandisk Technologies Llc |
Three dimensional non-volatile memory with separate source lines
|
US20160189786A1
(en)
|
2014-12-24 |
2016-06-30 |
Sandisk Technologies Inc. |
Methods and apparatus for reducing read time for nonvolatile memory devices
|
US9543023B2
(en)
|
2015-01-23 |
2017-01-10 |
Sandisk Technologies Llc |
Partial block erase for block programming in non-volatile memory
|
US9450023B1
(en)
|
2015-04-08 |
2016-09-20 |
Sandisk Technologies Llc |
Vertical bit line non-volatile memory with recessed word lines
|
US20160300620A1
(en)
|
2015-04-08 |
2016-10-13 |
Sandisk Technologies Inc. |
Multiple bit line voltage sensing for non-volatile memory
|
US9595317B2
(en)
|
2015-05-28 |
2017-03-14 |
Sandisk Technologies Llc |
Multi-state programming for non-volatile memory
|
US9996299B2
(en)
|
2015-06-25 |
2018-06-12 |
Western Digital Technologies, Inc |
Memory health monitoring
|
JP2018532617A
(ja)
|
2015-09-28 |
2018-11-08 |
タクトテク オーユー |
電子機器用の多層の構造および関連製造方法
|
US9715924B2
(en)
|
2015-10-22 |
2017-07-25 |
Sandisk Technologies Llc |
Three dimensional non-volatile memory with current sensing programming status
|
KR102708774B1
(ko)
|
2016-09-01 |
2024-09-24 |
삼성전자주식회사 |
스토리지 장치 및 그것의 카피백 방법
|
US9753806B1
(en)
|
2016-10-14 |
2017-09-05 |
International Business Machines Corporation |
Implementing signal integrity fail recovery and mainline calibration for DRAM
|
US10481999B2
(en)
*
|
2016-12-05 |
2019-11-19 |
Microsoft Technology Licensing, Llc |
Partial process recording
|
US9842657B1
(en)
|
2017-05-18 |
2017-12-12 |
Sandisk Technologies Llc |
Multi-state program using controlled weak boosting for non-volatile memory
|
CN107181454B
(zh)
*
|
2017-05-26 |
2023-03-21 |
重庆科技学院 |
路径延长轨道及其太阳能板间连接轨道
|
US10304550B1
(en)
|
2017-11-29 |
2019-05-28 |
Sandisk Technologies Llc |
Sense amplifier with negative threshold sensing for non-volatile memory
|
JP2019153366A
(ja)
*
|
2018-03-06 |
2019-09-12 |
東芝メモリ株式会社 |
メモリシステム、読み出し方法、プログラム、およびメモリコントローラ
|
US10607664B2
(en)
*
|
2018-03-22 |
2020-03-31 |
Micron Technology, Inc. |
Sub-threshold voltage leakage current tracking
|
JP7023204B2
(ja)
*
|
2018-09-14 |
2022-02-21 |
キオクシア株式会社 |
メモリシステムおよびメモリシステムの制御方法
|
US10643695B1
(en)
|
2019-01-10 |
2020-05-05 |
Sandisk Technologies Llc |
Concurrent multi-state program verify for non-volatile memory
|
US11024392B1
(en)
|
2019-12-23 |
2021-06-01 |
Sandisk Technologies Llc |
Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
|
US11081162B1
(en)
|
2020-02-24 |
2021-08-03 |
Sandisk Technologies Llc |
Source side precharge and boosting improvement for reverse order program
|
US11704234B2
(en)
*
|
2020-04-28 |
2023-07-18 |
Silicon Motion, Inc. |
Method for accessing flash memory module and associated package
|
US10998041B1
(en)
|
2020-05-07 |
2021-05-04 |
Western Digital Technologies, Inc. |
Calibrating non-volatile memory read thresholds
|
US11527300B2
(en)
|
2020-08-26 |
2022-12-13 |
Western Digital Technologies, Inc. |
Level dependent error correction code protection in multi-level non-volatile memory
|
US11436083B2
(en)
|
2020-09-04 |
2022-09-06 |
Western Digital Technologies, Inc. |
Data address management in non-volatile memory
|
US12001280B2
(en)
*
|
2020-12-24 |
2024-06-04 |
Intel Corporation |
Overcoming error correction coding mis-corrects in non-volatile memory
|
CN114978478A
(zh)
*
|
2021-02-19 |
2022-08-30 |
联华电子股份有限公司 |
物理不可复制函数电路及其操作方法以及半导体芯片
|
US11557358B2
(en)
|
2021-04-15 |
2023-01-17 |
Sandisk Technologies Llc |
Memory apparatus and method of operation using adaptive erase time compensation for segmented erase
|