DE69828966D1 - Verfahren zum Schutz des Inhalts nichtflüchtiger Speicherzellen - Google Patents

Verfahren zum Schutz des Inhalts nichtflüchtiger Speicherzellen

Info

Publication number
DE69828966D1
DE69828966D1 DE69828966T DE69828966T DE69828966D1 DE 69828966 D1 DE69828966 D1 DE 69828966D1 DE 69828966 T DE69828966 T DE 69828966T DE 69828966 T DE69828966 T DE 69828966T DE 69828966 D1 DE69828966 D1 DE 69828966D1
Authority
DE
Germany
Prior art keywords
protecting
content
volatile memory
memory cells
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69828966T
Other languages
English (en)
Inventor
Marco Pasotti
Frank Lhermet
Pier Luigi Rolandi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69828966D1 publication Critical patent/DE69828966D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
DE69828966T 1998-09-15 1998-09-15 Verfahren zum Schutz des Inhalts nichtflüchtiger Speicherzellen Expired - Lifetime DE69828966D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98830536A EP0987715B1 (de) 1998-09-15 1998-09-15 Verfahren zum Schutz des Inhalts nichtflüchtiger Speicherzellen

Publications (1)

Publication Number Publication Date
DE69828966D1 true DE69828966D1 (de) 2005-03-17

Family

ID=8236784

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69828966T Expired - Lifetime DE69828966D1 (de) 1998-09-15 1998-09-15 Verfahren zum Schutz des Inhalts nichtflüchtiger Speicherzellen

Country Status (3)

Country Link
US (1) US6169691B1 (de)
EP (1) EP0987715B1 (de)
DE (1) DE69828966D1 (de)

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US8156403B2 (en) 2006-05-12 2012-04-10 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
CN103258572B (zh) 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
US7605579B2 (en) * 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
KR100875292B1 (ko) * 2006-09-19 2008-12-23 삼성전자주식회사 플래시 메모리 장치 및 그것의 리프레쉬 방법
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Also Published As

Publication number Publication date
EP0987715B1 (de) 2005-02-09
US6169691B1 (en) 2001-01-02
EP0987715A1 (de) 2000-03-22

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