ATE518247T1 - Fotoelektrischer wandler und bildaufnahmesystem mit dual-damascene verbindungsstrukturen - Google Patents
Fotoelektrischer wandler und bildaufnahmesystem mit dual-damascene verbindungsstrukturenInfo
- Publication number
- ATE518247T1 ATE518247T1 AT08151687T AT08151687T ATE518247T1 AT E518247 T1 ATE518247 T1 AT E518247T1 AT 08151687 T AT08151687 T AT 08151687T AT 08151687 T AT08151687 T AT 08151687T AT E518247 T1 ATE518247 T1 AT E518247T1
- Authority
- AT
- Austria
- Prior art keywords
- forming
- interlayer insulation
- insulation film
- hole
- semiconductor substrate
- Prior art date
Links
- 238000009413 insulation Methods 0.000 abstract 6
- 239000011229 interlayer Substances 0.000 abstract 6
- 230000004913 activation Effects 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 230000009977 dual effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007044011A JP4110192B1 (ja) | 2007-02-23 | 2007-02-23 | 光電変換装置及び光電変換装置を用いた撮像システム |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE518247T1 true ATE518247T1 (de) | 2011-08-15 |
Family
ID=39494626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08151687T ATE518247T1 (de) | 2007-02-23 | 2008-02-20 | Fotoelektrischer wandler und bildaufnahmesystem mit dual-damascene verbindungsstrukturen |
Country Status (6)
Country | Link |
---|---|
US (2) | US7838918B2 (de) |
EP (2) | EP1962345B1 (de) |
JP (1) | JP4110192B1 (de) |
KR (1) | KR100953153B1 (de) |
CN (2) | CN101252138B (de) |
AT (1) | ATE518247T1 (de) |
Families Citing this family (26)
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JP4110192B1 (ja) * | 2007-02-23 | 2008-07-02 | キヤノン株式会社 | 光電変換装置及び光電変換装置を用いた撮像システム |
US7891494B2 (en) * | 2007-08-14 | 2011-02-22 | Reflex Packaging, Inc. | Light weight product cushioning device |
JP5441382B2 (ja) * | 2008-09-30 | 2014-03-12 | キヤノン株式会社 | 光電変換装置及び光電変換装置の製造方法 |
JP5478871B2 (ja) * | 2008-10-17 | 2014-04-23 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
KR20100045094A (ko) * | 2008-10-23 | 2010-05-03 | 주식회사 동부하이텍 | 이미지 센서의 제조 방법 |
JP2010161236A (ja) | 2009-01-08 | 2010-07-22 | Canon Inc | 光電変換装置の製造方法 |
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JP5627202B2 (ja) * | 2009-06-18 | 2014-11-19 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
JP5558916B2 (ja) | 2009-06-26 | 2014-07-23 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP5563257B2 (ja) * | 2009-08-28 | 2014-07-30 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
JP5700945B2 (ja) * | 2010-03-25 | 2015-04-15 | キヤノン株式会社 | 光電変換装置及びその製造方法 |
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JP2014049727A (ja) * | 2012-09-04 | 2014-03-17 | Canon Inc | 固体撮像装置 |
JP6198485B2 (ja) * | 2013-06-28 | 2017-09-20 | キヤノン株式会社 | 光電変換装置、及び撮像システム |
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JP2016033972A (ja) | 2014-07-31 | 2016-03-10 | キヤノン株式会社 | 撮像装置及び撮像システム |
US9991158B2 (en) * | 2014-09-12 | 2018-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, layout of semiconductor device, and method of manufacturing semiconductor device |
JP6736318B2 (ja) * | 2015-09-10 | 2020-08-05 | キヤノン株式会社 | 固体撮像素子、固体撮像素子の製造方法および撮像システム |
JP6818468B2 (ja) | 2016-08-25 | 2021-01-20 | キヤノン株式会社 | 光電変換装置及びカメラ |
JP2018060921A (ja) | 2016-10-05 | 2018-04-12 | キヤノン株式会社 | 光電変換装置及びシステム |
EP3324436B1 (de) * | 2016-11-21 | 2020-08-05 | IMEC vzw | Chip mit integrierter schaltung mit stromversorgungsnetzwerk auf der rückseite des chips |
US10347543B2 (en) * | 2017-11-13 | 2019-07-09 | Globalfoundries Inc. | FDSOI semiconductor device with contact enhancement layer and method of manufacturing |
JP2021019058A (ja) * | 2019-07-18 | 2021-02-15 | キヤノン株式会社 | 光電変換装置および機器 |
CN110634898A (zh) * | 2019-09-23 | 2019-12-31 | 上海华力微电子有限公司 | 一种用于背照式图像传感器的深硅槽及其形成方法 |
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JP2007242697A (ja) | 2006-03-06 | 2007-09-20 | Canon Inc | 撮像装置および撮像システム |
JP4315457B2 (ja) | 2006-08-31 | 2009-08-19 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP5305622B2 (ja) | 2006-08-31 | 2013-10-02 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP5159120B2 (ja) | 2007-02-23 | 2013-03-06 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
JP4110192B1 (ja) * | 2007-02-23 | 2008-07-02 | キヤノン株式会社 | 光電変換装置及び光電変換装置を用いた撮像システム |
-
2007
- 2007-02-23 JP JP2007044011A patent/JP4110192B1/ja not_active Expired - Fee Related
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2008
- 2008-02-06 US US12/026,623 patent/US7838918B2/en not_active Expired - Fee Related
- 2008-02-20 AT AT08151687T patent/ATE518247T1/de not_active IP Right Cessation
- 2008-02-20 EP EP08151687A patent/EP1962345B1/de not_active Not-in-force
- 2008-02-20 EP EP10183837.3A patent/EP2270862B1/de not_active Not-in-force
- 2008-02-22 CN CN2008100808751A patent/CN101252138B/zh not_active Expired - Fee Related
- 2008-02-22 CN CN2011100423411A patent/CN102142450B/zh not_active Expired - Fee Related
- 2008-02-22 KR KR1020080016058A patent/KR100953153B1/ko not_active IP Right Cessation
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2010
- 2010-10-14 US US12/904,269 patent/US8304278B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080203450A1 (en) | 2008-08-28 |
US8304278B2 (en) | 2012-11-06 |
EP2270862A3 (de) | 2011-09-07 |
CN101252138A (zh) | 2008-08-27 |
EP1962345A2 (de) | 2008-08-27 |
EP2270862B1 (de) | 2013-04-24 |
CN101252138B (zh) | 2011-03-30 |
CN102142450A (zh) | 2011-08-03 |
JP2008210870A (ja) | 2008-09-11 |
EP2270862A2 (de) | 2011-01-05 |
US20110027934A1 (en) | 2011-02-03 |
EP1962345B1 (de) | 2011-07-27 |
US7838918B2 (en) | 2010-11-23 |
EP1962345A3 (de) | 2009-03-04 |
KR20080078586A (ko) | 2008-08-27 |
CN102142450B (zh) | 2013-10-30 |
JP4110192B1 (ja) | 2008-07-02 |
KR100953153B1 (ko) | 2010-04-19 |
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