JP5627202B2 - 固体撮像装置及びその製造方法 - Google Patents
固体撮像装置及びその製造方法 Download PDFInfo
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- JP5627202B2 JP5627202B2 JP2009145698A JP2009145698A JP5627202B2 JP 5627202 B2 JP5627202 B2 JP 5627202B2 JP 2009145698 A JP2009145698 A JP 2009145698A JP 2009145698 A JP2009145698 A JP 2009145698A JP 5627202 B2 JP5627202 B2 JP 5627202B2
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- 238000003384 imaging method Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 89
- 239000002184 metal Substances 0.000 claims description 47
- 238000006243 chemical reaction Methods 0.000 claims description 41
- 230000003321 amplification Effects 0.000 claims description 26
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000003870 refractory metal Substances 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (9)
- 光を電荷に変換し、第1の光電変換素子と第2の光電変換素子とを有する複数の光電変換素子と、前記第1の光電変換素子の電荷を保持する第1の半導体領域と、前記第2の光電変換素子の電荷を保持する第2の半導体領域と、前記第1の半導体領域と前記第2の半導体領域の間に位置し、前記第1の半導体領域と前記第2の半導体領域に電気的に接続されたゲート電極と、ソース領域又はドレイン領域を構成する第3の半導体領域とを有する増幅MOSトランジスタと、前記第1の半導体領域と前記第2の半導体領域を初期化するリセットMOSトランジスタと、を有する半導体基板と、
前記半導体基板を覆う絶縁膜と、
前記絶縁膜上に配される金属配線層と、
前記第1の半導体領域の上と、前記第2の半導体領域の上と、前記増幅MOSトランジスタのゲート電極の上と、前記リセットMOSトランジスタのドレイン領域又はソース領域の上に直接接し、前記第1の半導体領域の上と、前記第2の半導体領域の上と、前記増幅MOSトランジスタのゲート電極の上と、前記リセットMOSトランジスタのドレイン領域又はソース領域の上に延在し、前記第1の半導体領域と、前記第2の半導体領域と、前記増幅MOSトランジスタのゲート電極とを前記金属配線層を介さずに、電気的に接続する局所配線と、
前記第3の半導体領域と、前記金属配線層とを、電気的に接続するコンタクトと、を有する固体撮像装置の製造方法であって、
前記絶縁膜の前記第1の半導体領域の上と、前記第2の半導体領域の上と、前記増幅MOSトランジスタのゲート電極の上と、前記リセットMOSトランジスタのドレイン領域又はソース領域の上の部分に局所配線のための溝を形成するステップと、
前記絶縁膜にコンタクトのためのコンタクトホールを形成するステップと、
前記溝と、前記コンタクトホールに同時に導電体を形成するステップと
を有することを特徴とする固体撮像装置の製造方法。 - 前記溝を形成するステップと、前記コンタクトホールを形成するステップは、同時に行うことを特徴とする請求項1記載の固体撮像装置の製造方法。
- さらに、前記絶縁膜の下に、エッチングストッパー膜を形成するステップを有することを特徴とする請求項1又は2記載の固体撮像装置の製造方法。
- 前記導電体は、主として高融点金属材料又は高融点シリサイド材料で形成されていることを特徴とする請求項1〜3のいずれか1項に記載の固体撮像装置の製造方法。
- 前記導電体は、高融点金属拡散防止層で覆われていることを特徴とする請求項1〜4のいずれか1項に記載の固体撮像装置の製造方法。
- 前記局所配線は、前記複数の光電変換素子の間に形成されることを特徴とする請求項1〜5のいずれか1項に記載の固体撮像装置の製造方法。
- 光を電荷に変換し、第1の光電変換素子と第2の光電変換素子とを有する複数の光電変換素子と、前記第1の光電変換素子の電荷を保持する第1の半導体領域と、前記第2の光電変換素子の電荷を保持する第2の半導体領域と、前記第1の光電変換素子と前記第2の光電変換素子の間に位置し、前記第1の半導体領域と前記第2の半導体領域に電気的に接続されたゲート電極と、ソース領域又はドレイン領域を構成する第3の半導体領域とを有する増幅MOSトランジスタと、前記第1の半導体領域と前記第2の半導体領域を初期化するリセットMOSトランジスタと、を有する半導体基板と、
前記半導体基板を覆う絶縁膜と、
前記絶縁膜上に配される金属配線層と、
前記絶縁膜内に配され、前記第1の半導体領域の上と、前記第2の半導体領域の上と、前記増幅MOSトランジスタのゲート電極の上と、前記リセットMOSトランジスタのドレイン領域又はソース領域の上に延在し、前記第1の半導体領域と、前記第2の半導体領域と、前記増幅MOSトランジスタのゲート電極とを、前記金属配線層を介さずに、電気的に接続する局所配線と、
前記絶縁膜内に配され、前記第2の半導体領域と前記金属配線層とを接続するコンタクトと
を有することを特徴とする固体撮像装置。 - 前記局所配線は、前記複数の光電変換素子の間に配されていることを特徴とする請求項7記載の固体撮像装置。
- さらに、前記局所配線とは別の局所配線とを有し、前記リセットMOSトランジスタは、前記局所配線と前記別の局所配線との間に配されていることを特徴とする請求項7又は8記載の固体撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2009145698A JP5627202B2 (ja) | 2009-06-18 | 2009-06-18 | 固体撮像装置及びその製造方法 |
US12/776,065 US8716770B2 (en) | 2009-06-18 | 2010-05-07 | Solid-state imaging apparatus that includes a local interconnect and method for manufacturing the same |
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JP2009145698A JP5627202B2 (ja) | 2009-06-18 | 2009-06-18 | 固体撮像装置及びその製造方法 |
Publications (3)
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JP2011003738A JP2011003738A (ja) | 2011-01-06 |
JP2011003738A5 JP2011003738A5 (ja) | 2012-08-02 |
JP5627202B2 true JP5627202B2 (ja) | 2014-11-19 |
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JP (1) | JP5627202B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5564874B2 (ja) * | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
JP5814626B2 (ja) * | 2011-05-27 | 2015-11-17 | キヤノン株式会社 | 光電変換装置及び光電変換装置の製造方法 |
JP5814625B2 (ja) * | 2011-05-27 | 2015-11-17 | キヤノン株式会社 | 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法 |
EP2587540A3 (en) * | 2011-10-31 | 2013-06-12 | Ricoh Company, Ltd. | Method for resetting photoelectric conversion device, and photoelectric conversion device |
JP6167406B2 (ja) | 2012-06-28 | 2017-07-26 | パナソニックIpマネジメント株式会社 | 固体撮像装置及びその製造方法 |
JP2019102494A (ja) * | 2017-11-28 | 2019-06-24 | キヤノン株式会社 | 光電変換装置およびその製造方法、機器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002368203A (ja) | 2001-06-05 | 2002-12-20 | Sony Corp | 固体撮像素子 |
JP4284908B2 (ja) * | 2001-12-25 | 2009-06-24 | ソニー株式会社 | Mos型固体撮像装置およびその製造方法 |
JP4971586B2 (ja) | 2004-09-01 | 2012-07-11 | キヤノン株式会社 | 固体撮像装置 |
US7345330B2 (en) * | 2004-12-09 | 2008-03-18 | Omnivision Technologies, Inc. | Local interconnect structure and method for a CMOS image sensor |
JP4938238B2 (ja) * | 2005-01-07 | 2012-05-23 | ソニー株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
KR100672993B1 (ko) * | 2005-01-19 | 2007-01-24 | 삼성전자주식회사 | 자가 승압 기능을 갖는 이미지 센서, 자가 승압 방법 및상기 이미지 센서 형성 방법 |
US7202543B2 (en) * | 2005-03-07 | 2007-04-10 | Micron Technology, Inc. | Method and structure to reduce optical crosstalk in a solid state imager |
JP5132102B2 (ja) | 2006-08-01 | 2013-01-30 | キヤノン株式会社 | 光電変換装置および光電変換装置を用いた撮像システム |
JP5305622B2 (ja) | 2006-08-31 | 2013-10-02 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP4110192B1 (ja) | 2007-02-23 | 2008-07-02 | キヤノン株式会社 | 光電変換装置及び光電変換装置を用いた撮像システム |
JP2008270500A (ja) * | 2007-04-19 | 2008-11-06 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
US20090302323A1 (en) * | 2008-06-04 | 2009-12-10 | Micron Technology, Inc. | Method and apparatus for providing a low-level interconnect section in an imager device |
US8174056B2 (en) * | 2009-05-05 | 2012-05-08 | Pixart Imaging, Inc. | Substrate-level interconnection and micro-electro-mechanical system |
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2009
- 2009-06-18 JP JP2009145698A patent/JP5627202B2/ja not_active Expired - Fee Related
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2010
- 2010-05-07 US US12/776,065 patent/US8716770B2/en not_active Expired - Fee Related
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US20100320517A1 (en) | 2010-12-23 |
US8716770B2 (en) | 2014-05-06 |
JP2011003738A (ja) | 2011-01-06 |
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