JP5814626B2 - 光電変換装置及び光電変換装置の製造方法 - Google Patents
光電変換装置及び光電変換装置の製造方法 Download PDFInfo
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- JP5814626B2 JP5814626B2 JP2011119260A JP2011119260A JP5814626B2 JP 5814626 B2 JP5814626 B2 JP 5814626B2 JP 2011119260 A JP2011119260 A JP 2011119260A JP 2011119260 A JP2011119260 A JP 2011119260A JP 5814626 B2 JP5814626 B2 JP 5814626B2
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
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- Automatic Focus Adjustment (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
そこで、本発明においては精度よく焦点検出を行うための遮光膜の構成及びその製造方法について提供する。
本発明の光電変換装置の製造方法は、それぞれ光電変換素子を含む複数の焦点検出用の画素と、前記光電変換素子で生じた信号を読み出すための複数の配線層とを有する光電変換装置の製造方法において、前記光電変換素子を覆う絶縁膜を形成する工程と、コンタクトホールを前記絶縁膜に形成する工程と、前記コンタクトホールにコンタクトプラグを形成する工程と、前記光電変換素子の一部を覆う溝を前記絶縁膜に形成する工程と、前記溝に不透明膜を形成する工程と、を有する。
また、本発明の光電変換装置の製造方法は、それぞれが光電変換素子を含む複数の焦点検出用の画素と、前記光電変換素子で生じた信号を読み出すための複数の配線層とを有する光電変換装置の製造方法において、前記光電変換素子を覆う第1の絶縁膜を形成する工程と、前記第1の絶縁膜を覆う不透明膜を形成する工程と、前記不透明膜をパターニングし、前記光電変換素子の一部を覆う遮光膜を形成する工程と、前記遮光膜を覆う第2の絶縁膜を形成する工程と、前記第2の絶縁膜の上に、前記複数の配線層のうち、最下層の配線層を形成する工程と、を有する。
S 表面
105 半導体領域
120 遮光膜
121 開口
118 配線層
124 下面
122 下面
123 上面
108 ゲート電極
Claims (10)
- 複数の焦点検出用の画素を有する光電変換装置であって、
受光面を有し、焦点検出用の信号を生じさせる光電変換素子と、
前記光電変換素子で生じた信号を読み出すための複数の配線層と、
前記複数の配線層の中で最も下層に設けられた最下層の配線層とフローティングディフュージョン部との導通をとるコンタクトプラグと、
前記光電変換素子の一部の上を覆う遮光膜と、を有し、
前記遮光膜の下面は、前記最下層の配線層の下面よりも、前記光電変換素子の受光面に近接して設けられており、
前記コンタクトプラグは、前記最下層の配線層の下面の高さから前記遮光膜の下面の高さまで延在していることを特徴とする光電変換装置。 - 前記遮光膜は、開口を有し、
前記開口の中心が前記光電変換素子の受光面の中心からオフセットしている請求項1に記載の光電変換装置。 - 前記最下層の配線層の下面と前記遮光膜の上面は同一高さに位置している請求項1あるいは2のいずれかに記載の光電変換装置。
- 前記コンタクトプラグの上面と前記遮光膜の上面は同一高さに位置している請求項1乃至3のいずれか1項に記載の光電変換装置。
- 前記コンタクトプラグの上面と下面との距離は、前記遮光膜の上面と下面との距離よりも長い請求項1乃至4のいずれか1項に記載の光電変換装置。
- 前記焦点検出用の画素は、前記信号を読み出すための転送トランジスタを有し、
前記遮光膜は、前記光電変換素子の一部の上から前記転送トランジスタのゲート電極の少なくとも一部の上に延在している請求項1乃至5のいずれか1項に記載の光電変換装置。 - 前記遮光膜が前記転送トランジスタのドレインの上には延在しない請求項6に記載の光電変換装置。
- 前記光電変換装置は、更に複数の撮像用の画素を有する請求項1乃至7のいずれか1項に記載の光電変換装置。
- 前記光電変換装置は、前記複数の撮像用の画素と前記複数の焦点検出用の画素とに配されたマイクロレンズを有する請求項8に記載の光電変換装置。
- 請求項1乃至9のいずれか1項に記載の光電変換装置と、
前記光電変換装置からの信号を処理する信号処理部と、を有する撮像システム。
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JP2011119260A JP5814626B2 (ja) | 2011-05-27 | 2011-05-27 | 光電変換装置及び光電変換装置の製造方法 |
US13/473,460 US8754969B2 (en) | 2011-05-27 | 2012-05-16 | Photoelectric conversion apparatus and method of manufacturing photoelectric conversion apparatus |
CN201210159758.0A CN102800683B (zh) | 2011-05-27 | 2012-05-22 | 光电转换设备和制造光电转换设备的方法 |
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JP2011119260A JP5814626B2 (ja) | 2011-05-27 | 2011-05-27 | 光電変換装置及び光電変換装置の製造方法 |
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JP5814626B2 true JP5814626B2 (ja) | 2015-11-17 |
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JP2011040647A (ja) * | 2009-08-17 | 2011-02-24 | Hitachi Ltd | 固体撮像素子 |
CN103155542A (zh) * | 2010-09-24 | 2013-06-12 | 富士胶片株式会社 | 图像拾取装置和图像拾取设备 |
CN103620783B (zh) | 2011-06-23 | 2016-08-17 | 松下电器产业株式会社 | 固体摄像装置 |
JP2013145779A (ja) * | 2012-01-13 | 2013-07-25 | Sony Corp | 固体撮像装置及び電子機器 |
JP5966636B2 (ja) * | 2012-06-06 | 2016-08-10 | 株式会社ニコン | 撮像素子および撮像装置 |
CN103685881B (zh) | 2012-09-19 | 2018-09-21 | Lg伊诺特有限公司 | 照相机模块 |
JP6087681B2 (ja) * | 2013-03-21 | 2017-03-01 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP6141065B2 (ja) * | 2013-03-21 | 2017-06-07 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
EP2782331A1 (en) * | 2013-03-22 | 2014-09-24 | Harvest Imaging bvba | Image sensor with focus-detection pixel, and method for reading focus-information |
JP6162999B2 (ja) * | 2013-04-15 | 2017-07-12 | キヤノン株式会社 | 固体撮像装置およびカメラ |
US20140375852A1 (en) * | 2013-06-20 | 2014-12-25 | Canon Kabushiki Kaisha | Solid-state imaging apparatus, method of manufacturing the same, camera, imaging device, and imaging apparatus |
US20150062422A1 (en) * | 2013-08-27 | 2015-03-05 | Semiconductor Components Industries, Llc | Lens alignment in camera modules using phase detection pixels |
JP2015060855A (ja) * | 2013-09-17 | 2015-03-30 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
JP6179776B2 (ja) * | 2014-06-09 | 2017-08-16 | ソニー株式会社 | 撮像素子および電子機器、並びに製造方法 |
JP2016051746A (ja) | 2014-08-29 | 2016-04-11 | ソニー株式会社 | 固体撮像装置、および電子装置 |
CN111799285B (zh) * | 2014-12-18 | 2024-05-14 | 索尼公司 | 成像装置 |
US10672813B2 (en) * | 2015-06-03 | 2020-06-02 | Sony Corporation | Solid-state imaging device, imaging apparatus, and manufacturing method of solid-state imaging device with pixels that include light shielding portions |
CN107004691B (zh) * | 2015-11-12 | 2022-02-11 | 松下知识产权经营株式会社 | 光检测装置 |
WO2020061823A1 (zh) * | 2018-09-26 | 2020-04-02 | 深圳市汇顶科技股份有限公司 | 光学图像采集单元、光学图像采集装置和电子设备 |
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JP3434740B2 (ja) * | 1999-06-30 | 2003-08-11 | Necエレクトロニクス株式会社 | 固体撮像装置 |
KR100699897B1 (ko) * | 2006-02-17 | 2007-03-28 | 삼성전자주식회사 | 이미지센서의 제조 방법 |
JP5364995B2 (ja) * | 2007-10-01 | 2013-12-11 | 株式会社ニコン | 固体撮像素子及びこれを用いた電子カメラ |
JP5157436B2 (ja) | 2007-10-11 | 2013-03-06 | 株式会社ニコン | 固体撮像素子および撮像装置 |
JP2009099817A (ja) * | 2007-10-18 | 2009-05-07 | Nikon Corp | 固体撮像素子 |
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JP5476731B2 (ja) * | 2009-02-13 | 2014-04-23 | 株式会社ニコン | 撮像素子 |
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JP5366616B2 (ja) * | 2009-04-02 | 2013-12-11 | キヤノン株式会社 | 撮像素子及びその製造方法 |
JP5627202B2 (ja) * | 2009-06-18 | 2014-11-19 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
JP5558916B2 (ja) * | 2009-06-26 | 2014-07-23 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP5434761B2 (ja) * | 2010-04-08 | 2014-03-05 | 株式会社ニコン | 撮像デバイスおよび撮像装置 |
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CN102800683B (zh) | 2015-06-24 |
JP2012248682A (ja) | 2012-12-13 |
US20120300102A1 (en) | 2012-11-29 |
US8754969B2 (en) | 2014-06-17 |
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